JP4850411B2 - 薄膜トランジスタの製造方法 - Google Patents
薄膜トランジスタの製造方法 Download PDFInfo
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- JP4850411B2 JP4850411B2 JP2004363541A JP2004363541A JP4850411B2 JP 4850411 B2 JP4850411 B2 JP 4850411B2 JP 2004363541 A JP2004363541 A JP 2004363541A JP 2004363541 A JP2004363541 A JP 2004363541A JP 4850411 B2 JP4850411 B2 JP 4850411B2
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- 239000010409 thin film Substances 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 239000010410 layer Substances 0.000 claims description 138
- 239000002184 metal Substances 0.000 claims description 100
- 229910052751 metal Inorganic materials 0.000 claims description 100
- 239000003054 catalyst Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 52
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 23
- 238000002425 crystallisation Methods 0.000 claims description 17
- 239000011241 protective layer Substances 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 230000008025 crystallization Effects 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 239000013078 crystal Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L21/02656—Special treatments
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- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Description
110:バッファー層
120:非晶質シリコン層
130:キャッピング層
140:金属触媒
150:シード
160、170、180、260、360、460:レーザービーム
125:多結晶シリコン層
190:半導体層パターン
195:ゲート絶縁膜
196:ゲート電極
265、465:パターニングされたマスク
345:金属触媒保護層
Claims (18)
- SGS法を利用した薄膜トランジスタの製造方法であって、
基板上に非晶質シリコン層を形成する段階と;
前記非晶質シリコン層上にキャッピング層を形成する段階と;
前記キャッピング層上に金属触媒層を形成する段階と;
前記金属触媒層にレーザービームを選択的に複数箇所照射して前記金属触媒を前記非晶質シリコン層に拡散させて、金属ケイ化物から成るシードを形成させる段階;及び
前記シードを形成した前記非晶質シリコン層を結晶化する段階を順に行い、
前記シードを形成した前記非晶質シリコン層の結晶化は熱処理により構成されることを特徴とする薄膜トランジスタの製造方法。 - 前記レーザービームの形態がドット型であることを特徴とする請求項1に記載の薄膜トランジスタの製造方法。
- 前記ドット型のレーザービームは円形、三角形、四角形、台形及びひし形のうちいずれか一つであることを特徴とする請求項2に記載の薄膜トランジスタの製造方法。
- 前記レーザービームの形態がライン型であることを特徴とする請求項1に記載の薄膜トランジスタの製造方法。
- 前記レーザービームはパターニングされたマスクを介して照射されることを特徴とする請求項1に記載の薄膜トランジスタの製造方法。
- 前記キャッピング層はシリコン窒化膜またはシリコン酸化膜で構成されたことを特徴とする請求項1に記載の薄膜トランジスタの製造方法。
- 前記金属触媒はニッケルであることを特徴とする請求項1に記載の薄膜トランジスタの製造方法。
- 前記金属触媒層の厚さは2Å以下であることを特徴とする請求項1に記載の薄膜トランジスタの製造方法。
- SGS法を利用した薄膜トランジスタの製造方法であって、
基板上に非晶質シリコン層を形成する段階と;
前記非晶質シリコン層上にキャッピング層を形成する段階と;
前記キャッピング層上に金属触媒層を形成する段階と;
前記金属触媒層上に金属触媒保護層を形成する段階と;
前記金属触媒保護層にレーザービームを選択的に複数箇所照射して前記金属触媒を前記非晶質シリコン層に拡散させて、金属ケイ化物から成るシードを形成させる段階;及び
前記シードを形成した前記非晶質シリコン層を結晶化する段階を順に行い、
前記シードを形成した前記非晶質シリコン層の結晶化は熱処理により構成されることを特徴とする薄膜トランジスタの製造方法。 - 前記レーザービームの形態がドット型であることを特徴とする請求項9に記載の薄膜トランジスタの製造方法。
- 前記ドット型のレーザービームは円形、三角形、四角形、台形及びひし形のうちいずれか一つであることを特徴とする請求項10に記載の薄膜トランジスタの製造方法。
- 前記レーザービームの形態がライン型であることを特徴とする請求項9に記載の薄膜トランジスタの製造方法。
- 前記レーザービームはパターニングされたマスクを介して照射されることを特徴とする請求項9に記載の薄膜トランジスタの製造方法。
- 前記キャッピング層はシリコン窒化膜またはシリコン酸化膜で構成されたことを特徴とする請求項9に記載の薄膜トランジスタの製造方法。
- 前記金属触媒はニッケルであることを特徴とする請求項9に記載の薄膜トランジスタの製造方法。
- 前記金属触媒層の厚さは2Å以下であることを特徴とする請求項9に記載の薄膜トランジスタの製造方法。
- 前記金属触媒保護層はシリコン窒化膜またはシリコン酸化膜で構成されたことを特徴とする請求項9に記載の薄膜トランジスタの製造方法。
- 前記金属触媒保護層は前記キャッピング層と同時にエッチングが可能な膜で構成されたことを特徴とする請求項9に記載の薄膜トランジスタの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2004-066090 | 2004-08-20 | ||
KR1020040066090A KR100611764B1 (ko) | 2004-08-20 | 2004-08-20 | 박막트랜지스터의 제조 방법 |
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Publication Number | Publication Date |
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JP2006060185A JP2006060185A (ja) | 2006-03-02 |
JP4850411B2 true JP4850411B2 (ja) | 2012-01-11 |
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JP2004363541A Active JP4850411B2 (ja) | 2004-08-20 | 2004-12-15 | 薄膜トランジスタの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7205215B2 (ja) |
JP (1) | JP4850411B2 (ja) |
KR (1) | KR100611764B1 (ja) |
CN (1) | CN100517616C (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW264575B (ja) * | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
KR100611659B1 (ko) * | 2004-07-07 | 2006-08-10 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
US7683373B2 (en) * | 2004-10-05 | 2010-03-23 | Samsung Mobile Display Co., Ltd. | Thin film transistor and method of fabricating the same |
KR100770269B1 (ko) * | 2006-05-18 | 2007-10-25 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조방법 |
KR100770268B1 (ko) * | 2006-05-18 | 2007-10-25 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조방법 |
KR20080015666A (ko) | 2006-08-16 | 2008-02-20 | 삼성전자주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
KR100839735B1 (ko) * | 2006-12-29 | 2008-06-19 | 삼성에스디아이 주식회사 | 트랜지스터, 이의 제조 방법 및 이를 구비한 평판 표시장치 |
KR100810643B1 (ko) | 2007-03-13 | 2008-03-06 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
KR100860008B1 (ko) * | 2007-03-20 | 2008-09-25 | 삼성에스디아이 주식회사 | 디렉셔널 결정화 방법을 이용한 평판 디스플레이 소자와그의 제조방법, 반도체 소자와 그의 제조방법 |
US8334536B2 (en) | 2007-03-16 | 2012-12-18 | Samsung Display Co., Ltd. | Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same |
KR101579872B1 (ko) | 2008-04-29 | 2015-12-24 | 삼성디스플레이 주식회사 | 전사 기판, 이의 제조방법 및 유기 전계 발광소자의제조방법 |
KR101049799B1 (ko) * | 2009-03-03 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 포함하는 유기전계발광표시장치 |
KR101041141B1 (ko) | 2009-03-03 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR101049801B1 (ko) | 2009-03-05 | 2011-07-15 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치 |
KR101056428B1 (ko) * | 2009-03-27 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는 유기전계발광표시장치 |
KR101041142B1 (ko) * | 2009-11-06 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 박막트랜지스터 및 그의 제조방법, 그를 포함하는 유기전계발광표시장치 및 그의 제조방법 |
KR101094295B1 (ko) * | 2009-11-13 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조방법, 박막트랜지스터의 제조방법, 및 유기전계발광표시장치의 제조방법 |
CN102157343B (zh) * | 2010-11-25 | 2013-07-03 | 清华大学 | 一种采用梯形束斑扫描的激光退火方法 |
KR102239841B1 (ko) * | 2014-08-06 | 2021-04-14 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 구비하는 디스플레이 장치, 박막 트랜지스터의 제조방법 및 디스플레이 장치의 제조방법 |
CN109643657B (zh) * | 2017-06-22 | 2022-08-16 | 深圳市柔宇科技股份有限公司 | 阵列基板的制作设备及阵列基板的制作方法 |
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