JP2005537672A5 - - Google Patents

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Publication number
JP2005537672A5
JP2005537672A5 JP2004533596A JP2004533596A JP2005537672A5 JP 2005537672 A5 JP2005537672 A5 JP 2005537672A5 JP 2004533596 A JP2004533596 A JP 2004533596A JP 2004533596 A JP2004533596 A JP 2004533596A JP 2005537672 A5 JP2005537672 A5 JP 2005537672A5
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JP
Japan
Prior art keywords
layer
insulating means
sige
sige layer
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004533596A
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English (en)
Japanese (ja)
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JP2005537672A (ja
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Publication date
Priority claimed from GBGB0220438.6A external-priority patent/GB0220438D0/en
Application filed filed Critical
Publication of JP2005537672A publication Critical patent/JP2005537672A/ja
Publication of JP2005537672A5 publication Critical patent/JP2005537672A5/ja
Pending legal-status Critical Current

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JP2004533596A 2002-09-03 2003-08-12 格子調整半導体基板の形成 Pending JP2005537672A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0220438.6A GB0220438D0 (en) 2002-09-03 2002-09-03 Formation of lattice-turning semiconductor substrates
PCT/GB2003/003514 WO2004023536A1 (en) 2002-09-03 2003-08-12 Formation of lattice-tuning semiconductor substrates

Publications (2)

Publication Number Publication Date
JP2005537672A JP2005537672A (ja) 2005-12-08
JP2005537672A5 true JP2005537672A5 (enExample) 2008-12-18

Family

ID=9943412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004533596A Pending JP2005537672A (ja) 2002-09-03 2003-08-12 格子調整半導体基板の形成

Country Status (8)

Country Link
US (1) US7179727B2 (enExample)
EP (1) EP1540715A1 (enExample)
JP (1) JP2005537672A (enExample)
KR (1) KR20050038037A (enExample)
CN (1) CN100364052C (enExample)
AU (1) AU2003251376A1 (enExample)
GB (1) GB0220438D0 (enExample)
WO (1) WO2004023536A1 (enExample)

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GB2418531A (en) * 2004-09-22 2006-03-29 Univ Warwick Formation of lattice-tuning semiconductor substrates
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
EP1911086A2 (en) 2005-07-26 2008-04-16 Amberwave Systems Corporation Solutions integrated circuit integration of alternative active area materials
US7638842B2 (en) 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
WO2007112066A2 (en) * 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
US7476606B2 (en) * 2006-03-28 2009-01-13 Northrop Grumman Corporation Eutectic bonding of ultrathin semiconductors
EP2062290B1 (en) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) * 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US9508890B2 (en) * 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
JP2010538495A (ja) * 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション 多接合太陽電池
KR20100094460A (ko) * 2007-12-28 2010-08-26 스미또모 가가꾸 가부시키가이샤 반도체 기판, 반도체 기판의 제조 방법 및 전자 디바이스
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US20100072515A1 (en) * 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
KR20110081804A (ko) * 2008-10-02 2011-07-14 스미또모 가가꾸 가부시키가이샤 반도체 디바이스용 기판, 반도체 디바이스 장치, 설계 시스템, 제조 방법 및 설계 방법
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
CN102439696A (zh) 2009-05-22 2012-05-02 住友化学株式会社 半导体基板及其制造方法、电子器件及其制造方法
JP6706414B2 (ja) * 2015-11-27 2020-06-10 国立研究開発法人情報通信研究機構 Ｇｅ単結晶薄膜の製造方法及び光デバイス

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