JP2005517811A - 埋込抵抗体を形成するエッチング溶液 - Google Patents
埋込抵抗体を形成するエッチング溶液 Download PDFInfo
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- JP2005517811A JP2005517811A JP2003568671A JP2003568671A JP2005517811A JP 2005517811 A JP2005517811 A JP 2005517811A JP 2003568671 A JP2003568671 A JP 2003568671A JP 2003568671 A JP2003568671 A JP 2003568671A JP 2005517811 A JP2005517811 A JP 2005517811A
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- 238000005530 etching Methods 0.000 title claims abstract description 97
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims abstract description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052802 copper Inorganic materials 0.000 claims abstract description 34
- 239000010949 copper Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 33
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 31
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 27
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 22
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 239000011888 foil Substances 0.000 claims description 14
- 235000011187 glycerol Nutrition 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000009835 boiling Methods 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 34
- 239000011651 chromium Substances 0.000 abstract description 18
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052804 chromium Inorganic materials 0.000 abstract description 10
- 229910052759 nickel Inorganic materials 0.000 abstract description 7
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract description 4
- 229910000599 Cr alloy Inorganic materials 0.000 description 12
- 229910000990 Ni alloy Inorganic materials 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000002378 acidificating effect Effects 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000788 chromium alloy Substances 0.000 description 2
- 238000009429 electrical wiring Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/2416—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- ing And Chemical Polishing (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
本発明の別の形態によると、銅層と抵抗層を有する抵抗箔から埋込抵抗体を形成する方法が提供される。抵抗箔は絶縁層に接着される。この方法は銅エッチング液で銅層の一部を選択的に除去して配線を形成する工程と、塩酸およびチオ尿素が含まれるエッチング液で抵抗層を選択的にエッチングする工程とから構成される。
また本発明の目的はNi/Cr合金のエッチング速度を改善するエッチング液を提供することである。
これらの目的は付帯する図面および特許請求の範囲とともに以下に記載する好ましい実施の形態から明確になる。
グリセリン(46体積%)
チオ尿素(2ppm)
水(11体積%)
エッチング溶液温度:150°F(65℃)
銅箔(単位面積当たりの重量):1oz/ft2(305g/m2)
抵抗材料:Ni(56wt%)/Cr(38wt%)/Al(4wt%)/Si(2wt%)
抵抗材料の厚さ:0.1μm
隣接する配線の間隙:2−4ミル(0.05−0.1mm)
グリセリン(46体積%)
チオ尿素(2ppm)
水(11体積%)
エッチング溶液温度:150°F(65℃)
銅箔(単位面積当たりの重量):1oz/ft2(305g/m2)
抵抗材料:Ni(56wt%)/Cr(38wt%)/Al(4wt%)/Si(2wt%)
抵抗材料の厚さ:0.03μm
隣接する配線の間隙:2−4ミル(0.05−0.1mm)
Claims (31)
- ニッケルクロム合金を含む電気抵抗材料をエッチングするエッチング溶液であって、
前記エッチング溶液には塩酸およびチオ尿素が含まれる。 - 前記塩酸は5体積%から95体積%までの範囲内にある請求項1に記載のエッチング溶液。
- 前記塩酸は約43体積%である請求項2に記載のエッチング溶液。
- 前記チオ尿素は0.1ppmから100g/lまでの範囲内にある請求項1に記載のエッチング溶液。
- 前記チオ尿素は1ppmから20ppmまでの範囲内にある請求項4に記載のエッチング溶液。
- 前記チオ尿素は1ppmから2ppmまでの範囲内にある請求項5に記載のエッチング溶液。
- 前記溶液にはさらにグリセリンが含まれる請求項1に記載のエッチング溶液。
- 前記グリセリンは5体積%から95体積%までの範囲内にある請求項7に記載のエッチング溶液。
- 前記グリセリンは約46体積%である請求項8に記載のエッチング溶液。
- 前記溶液にはさらに水が含まれる請求項1に記載のエッチング溶液。
- 前記水の量は全体で100体積%となる請求項10に記載のエッチング溶液。
- 前記溶液の温度は室温から前記溶液の沸点温度付近までの範囲内である請求項1に記載のエッチング溶液。
- 前記溶液の温度は120°F(49℃)から180°F(82℃)までの範囲内である請求項12に記載のエッチング溶液。
- 前記溶液の温度は140°F(60℃)から150°F(65℃)までの範囲内である請求項13に記載のエッチング溶液。
- 絶縁層に接着され銅層と抵抗層を有する抵抗箔から埋込抵抗体を形成する方法であって、該方法は
配線を形成するため銅層の一部を銅エッチング液で選択的に除去する工程と、
塩酸とチオ尿素が含まれる溶液で抵抗層を選択的にエッチングする工程とから構成される。 - 配線を画定するため感光性樹脂を銅層に塗布する請求項15に記載の方法。
- 抵抗層を選択的にエッチングする前には前記感光性樹脂を除去しない請求項16に記載の方法。
- 抵抗層を選択的にエッチングする前に前記感光性樹脂を除去する請求項16に記載の 方法。
- 前記塩酸は5体積%から95体積%までの範囲内である請求項15に記載の方法。
- 前記塩酸は約43体積%である請求項19に記載の方法。
- 前記チオ尿素は0.1ppmから100g/lまでの範囲内である請求項15に記載の方法。
- 前記チオ尿素は1ppmから20ppmまでの範囲内である請求項21に記載の方法。
- 前記チオ尿素は1ppmから2ppmまでの範囲内である請求項22に記載の方法。
- 前記溶液にはさらにグリセリンが含まれる請求項15に記載の方法。
- 前記グリセリンは5体積%から95体積%までの範囲内である請求項24に記載の方法。
- 前記グリセリンは約46体積%である請求項25に記載の方法。
- 前記溶液にはさらに水が含まれる請求項15に記載の方法。
- 前記水の量は全体で100体積%となる請求項27に記載の方法。
- 前記溶液の温度は室温から前記溶液の沸点温度付近までの範囲内である請求項15に記載の方法。
- 前記溶液の温度は120°F(49℃)から180°F(82℃)までの範囲内である請求項29に記載の方法。
- 前記溶液の温度は140°F(60℃)から150°F(65℃)までの範囲内である請求項30に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/073,503 US6841084B2 (en) | 2002-02-11 | 2002-02-11 | Etching solution for forming an embedded resistor |
PCT/US2003/003086 WO2003069636A1 (en) | 2002-02-11 | 2003-02-03 | Etching solution for forming an embedded resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005517811A true JP2005517811A (ja) | 2005-06-16 |
JP4232871B2 JP4232871B2 (ja) | 2009-03-04 |
Family
ID=27659687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003568671A Expired - Fee Related JP4232871B2 (ja) | 2002-02-11 | 2003-02-03 | 埋込抵抗体を形成するエッチング溶液 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6841084B2 (ja) |
EP (1) | EP1474811B1 (ja) |
JP (1) | JP4232871B2 (ja) |
KR (1) | KR100692606B1 (ja) |
CN (1) | CN1328196C (ja) |
DE (1) | DE60327168D1 (ja) |
TW (1) | TWI284683B (ja) |
WO (1) | WO2003069636A1 (ja) |
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EP1703781B1 (de) * | 2005-03-16 | 2008-09-24 | Dyconex AG | Verfahren zum Herstellen eines elektrischen Verbindungselementes, sowie Verbindungselement |
US20060286742A1 (en) * | 2005-06-21 | 2006-12-21 | Yageo Corporation | Method for fabrication of surface mounted metal foil chip resistors |
KR101124290B1 (ko) * | 2005-11-03 | 2012-03-27 | 삼성엘이디 주식회사 | 질화물 반도체 레이저 소자 및 그 제조 방법 |
CN101365300A (zh) * | 2007-08-08 | 2009-02-11 | 富葵精密组件(深圳)有限公司 | 电路板导电线路的制作方法 |
KR101026000B1 (ko) * | 2009-01-22 | 2011-03-30 | 엘에스엠트론 주식회사 | 저항층 코팅 도전체 및 그 제조방법과 인쇄회로기판 |
US8486281B2 (en) * | 2009-10-05 | 2013-07-16 | Kesheng Feng | Nickel-chromium alloy stripper for flexible wiring boards |
US8102042B2 (en) * | 2009-12-03 | 2012-01-24 | International Business Machines Corporation | Reducing plating stub reflections in a chip package using resistive coupling |
US8143464B2 (en) * | 2011-03-24 | 2012-03-27 | Cool Planet Biofuels, Inc. | Method for making renewable fuels |
WO2013048834A1 (en) | 2011-09-30 | 2013-04-04 | 3M Innovative Properties Company | Methods of continuously wet etching a patterned substrate |
JP5920972B2 (ja) * | 2011-12-26 | 2016-05-24 | メック株式会社 | 配線形成方法およびエッチング液 |
CN103762049A (zh) * | 2013-11-01 | 2014-04-30 | 成都顺康三森电子有限责任公司 | 半导体陶瓷化学镀镍镍电极外沿去除的方法 |
GB2534324A (en) * | 2013-12-09 | 2016-07-20 | Halliburton Energy Services Inc | Leaching ultrahard materials by enhanced demetalyzation |
JP6429079B2 (ja) * | 2015-02-12 | 2018-11-28 | メック株式会社 | エッチング液及びエッチング方法 |
CN106048704B (zh) * | 2016-08-05 | 2018-06-19 | 广州三孚新材料科技股份有限公司 | 用于铬锆铜合金的电解刻蚀剂和电解刻蚀方法 |
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US5428263A (en) * | 1992-01-07 | 1995-06-27 | Mitsubishi Denki Kabushiki Kaisha | Discharge cathode device with stress relieving layer and method for manufacturing the same |
US6150279A (en) * | 1998-06-23 | 2000-11-21 | Ku; Amy | Reverse current gold etch |
US6117250A (en) * | 1999-02-25 | 2000-09-12 | Morton International Inc. | Thiazole and thiocarbamide based chemicals for use with oxidative etchant solutions |
US6086779A (en) | 1999-03-01 | 2000-07-11 | Mcgean-Rohco, Inc. | Copper etching compositions and method for etching copper |
-
2002
- 2002-02-11 US US10/073,503 patent/US6841084B2/en not_active Expired - Fee Related
-
2003
- 2003-02-03 KR KR1020047012044A patent/KR100692606B1/ko not_active IP Right Cessation
- 2003-02-03 DE DE60327168T patent/DE60327168D1/de not_active Expired - Lifetime
- 2003-02-03 WO PCT/US2003/003086 patent/WO2003069636A1/en active Application Filing
- 2003-02-03 JP JP2003568671A patent/JP4232871B2/ja not_active Expired - Fee Related
- 2003-02-03 EP EP03708935A patent/EP1474811B1/en not_active Expired - Fee Related
- 2003-02-03 CN CNB038035979A patent/CN1328196C/zh not_active Expired - Fee Related
- 2003-02-10 TW TW092102649A patent/TWI284683B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6841084B2 (en) | 2005-01-11 |
CN1630917A (zh) | 2005-06-22 |
EP1474811B1 (en) | 2009-04-15 |
KR100692606B1 (ko) | 2007-03-13 |
CN1328196C (zh) | 2007-07-25 |
JP4232871B2 (ja) | 2009-03-04 |
WO2003069636A1 (en) | 2003-08-21 |
TW200302880A (en) | 2003-08-16 |
TWI284683B (en) | 2007-08-01 |
US20030150840A1 (en) | 2003-08-14 |
DE60327168D1 (de) | 2009-05-28 |
EP1474811A4 (en) | 2005-04-06 |
KR20040093705A (ko) | 2004-11-08 |
EP1474811A1 (en) | 2004-11-10 |
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