CN1328196C - 用于形成嵌入式电阻器的刻蚀溶液 - Google Patents
用于形成嵌入式电阻器的刻蚀溶液 Download PDFInfo
- Publication number
- CN1328196C CN1328196C CNB038035979A CN03803597A CN1328196C CN 1328196 C CN1328196 C CN 1328196C CN B038035979 A CNB038035979 A CN B038035979A CN 03803597 A CN03803597 A CN 03803597A CN 1328196 C CN1328196 C CN 1328196C
- Authority
- CN
- China
- Prior art keywords
- etching
- resistive
- nickel
- layer
- thiocarbamide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005530 etching Methods 0.000 title claims abstract description 86
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052802 copper Inorganic materials 0.000 claims abstract description 39
- 239000010949 copper Substances 0.000 claims abstract description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 38
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000011651 chromium Substances 0.000 claims abstract description 22
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims abstract description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 12
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 36
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 30
- 239000003795 chemical substances by application Substances 0.000 claims description 24
- 239000011888 foil Substances 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 17
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 150000001879 copper Chemical class 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 2
- 230000001186 cumulative effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 18
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 40
- 229910000599 Cr alloy Inorganic materials 0.000 description 10
- 229910000990 Ni alloy Inorganic materials 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- -1 preferably Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/2416—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- ing And Chemical Polishing (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
一种含有硫脲的电阻刻蚀溶液，它尤其适合于刻蚀由镍-铬合金组成的电阻材料。在(a)铜表面面积与(b)镍/铬表面面积的比值较大、并且期望精细特征刻蚀的情况下，电阻刻蚀溶液允许对镍铬合金进行快速而有效地刻蚀。
Description
技术领域
本发明涉及一种用于刻蚀电阻薄片上的电阻层的刻蚀溶液，具体涉及一种含有硫脲的刻蚀溶液，它尤其适合于刻蚀由镍铬合金组成的电阻层。
背景技术
随着电子部件变得更小、更轻，相关的印刷电路板(PCB)需要变得更小、更薄。为了缩小PCB的尺寸，迹线作得更细，同时还要缩小PCB上电互连的间隔。在缩小PCB尺寸方面，将无源的离散元件(例如嵌入式电阻器)集成到PCB中也很有用的。将无源离散元件的功能集成到PCB的层叠基板中可以释放出用于离散元件的PCB表面面积。由此，利用嵌入式无源元件允许在不使用较多PCB表面面积的情况下通过结合更多有源元件得到增强的部件功能。此外，将无源元件嵌入到PCB中不仅可以让电子部件进一步小型化，而且也改善了可靠性以及电性能。
制造嵌入式电阻器的一种现有技术方法已经使用了电阻薄片，电阻薄片是通过在铜薄片上淀积一层电阻性材料薄膜形成的。在形成嵌入式电阻器中，具有镍(Ni)和铬(Cr)为主要成分的金属合金(此后称为“镍铬”或“Ni/Cr”合金)一般用作形成嵌入式电阻器。这样的一种金属合金是Ni/Cr/Si/Al。形成嵌入式电阻器的过程包括：(a)将电阻薄片层叠到介电层上，(b)顺序地刻蚀电阻薄片，以形成电阻器，以及(c)将形成的电阻器埋置在多层印刷电路板内。
在上述的顺序刻蚀过程中，使用第一选择性刻蚀溶液在不侵蚀Ni/Cr合金的情况下去除不想要的铜。然后利用第二选择性刻蚀溶液在不侵蚀铜的情况下去除不想要的Ni/Cr合金。在刻蚀Ni/Cr合金时，酸性铬刻蚀溶液是优选的。
已有多个对于酸性铬刻蚀溶液的专利。例如，美国专利No.2230156描述了一种含盐酸和乙二醇的铬刻蚀溶液，其中乙二醇的碳原子比羟基多，以及美国专利No.2687345描述了一种含氯化钙和乙烯醇的铬刻蚀溶液。此外，美国专利No.4160691描述了一种含盐酸和丙三醇的铬刻蚀溶液。所有这些提到的方案都是酸性铬刻蚀溶液，它们在很少侵蚀铜或不侵蚀铜的情况下有效地去除铬。因此，现有技术的刻蚀剂可用于刻蚀Ni/Cr合金层。
人们发现，前面描述的这类溶液的刻蚀速率随着下面比率的增加而显著降低：
该比例(此后称为“CSA/RSA比率”)能达到一个抑制Ni/Cr合金刻蚀的值。此外，人们发现某些Ni/Cr合金溶液会溶解掉处理剂(包括但不限于粘合促进处理剂(例如结核状处理剂)、阻热层处理剂、防污处理剂、以及树脂防腐涂层处理剂)。这些处理剂淀积在铜表面上，用以增强电阻薄片的剥离强度和贮藏寿命。
本发明针对现有技术中的这些和其它缺陷，并提供了一种含硫脲的刻蚀溶液，用于刻蚀由镍-铬合金构成的电阻层。
发明内容
依照本发明，提供一种用于刻蚀包括镍-铬合金的电阻材料的电阻刻蚀溶液，该溶液包括盐酸和硫脲。
依照本发明的另一方面，提供一种由具有铜层和电阻层的电阻薄片形成嵌入式电阻器的方法，其中电阻薄片结合到介电层上，该方法包括：利用铜刻蚀剂，选择性地去除该铜层的若干部分，以形成迹线；以及利用由盐酸和硫脲组成的刻蚀剂，选择性地刻蚀电阻层。
依据本发明的再一个方面，提供一种用于由具有铜层和电阻层的电阻薄片形成嵌入式电阻器的方法，该电阻层包括具有铝和硅中至少之一的镍-铬合金，其中所述电阻薄片结合到介电层上，该方法包括：利用铜刻蚀剂，选择性地去除该铜层的若干部分，以形成迹线；以及利用由盐酸、丙三醇和硫脲组成的混合刻蚀剂，选择性地刻蚀包括镍-铬合金的该电阻层，其中所述丙三醇在5体积％到95体积％的范围内，所述硫脲在约1ppm到100克/升的范围内。
本发明的一个目的是提供一种用于刻蚀Ni/Cr合金的刻蚀剂。
本发明的另一目的是提供一种提高Ni/Cr合金之刻蚀速率的刻蚀剂。
本发明的又一目的是提供一种如上述的刻蚀剂，它适合刻蚀CsA/RsA比率较大的Ni/Cr合金。
通过下面结合附图优选实施例的描述以及所附的权利要求，将使这些和其它目的变得明显。
附图说明
在某些部件和部件布置上，本发明可采用物理形式，其优选实施例将在说明书中给出详细描述，以及在构成说明书一部分的附图中示出，其中：
图1是包含结合到介电层上的电阻薄片的层叠组件的剖视图；
图2是图1所示的层叠组件在经过刻蚀过程刻蚀掉电阻薄片的部分铜层之后的剖视图；
图3是图2所示的层叠组件在经过刻蚀过程刻蚀掉电阻薄片的部分电阻层之后的剖视图。
具体实施方式
现在参照附图，其所示内容仅为了说明本发明的优选实施例，而并非对本发明形成限制，图1表示通常包含结合到介电层60上的电阻薄片40的层叠组件10的剖视图。电阻薄片40包括铜层20和电阻层30。电阻薄片40通过将电阻层30淀积到铜层20上来形成。作为举例而并非限定，可利用溅射过程淀积电阻层30。电阻层30可采用多种合适的形式，包括但不局限于镍-铬合金，优选地，镍-铬合金包含镍、铬、铝和硅(Ni/Cr/Al/Si)。在优选实施例中，Ni/Cr/Al/Si合金由56wt％的镍/38wt％的铬/4wt％的铝/2wt％的硅组成。作为举例而并非限定，介电层60是含有玻璃丝织物的固化环氧树脂(传统称为“聚酯胶片”)。
采用顺序刻蚀过程形成电阻器。顺序刻蚀过程包括用于刻蚀铜层20的第一选择性刻蚀过程和用于刻蚀电阻层30的第二选择性刻蚀过程。
现有技术中的惯例是，在准备刻蚀铜的过程中，将光致抗蚀层50施加到铜层20上，在光致抗蚀层50上施加掩膜(未示出)，以及根据掩膜固化光致抗蚀层50的选定部分。然后除掉掩膜，接着再除掉未固化的光致抗蚀剂。在将要通过刻蚀形成迹线的铜层20上保留固化的光致抗蚀剂。图2表示第一选择性刻蚀过程之后的层叠组件10，其中形成了迹线。在此，除掉铜层20的选定部分，以形成迹线22、24和26。
图3表示第二刻蚀过程之后的层叠组件10，其中除掉了电阻层30的选定部分。本领域普通技术人员可以理解的是，没有通过第二选择性刻蚀过程刻蚀的暴露的电阻层30的任何面积都必须用合适的光致抗蚀剂来覆盖。
按照上面所讨论的，可以发现：铜的存在、以及更具体地，要被刻蚀掉的暴露的铜表面面积之数量看起来会影响用于去除电阻材料的刻蚀溶液的性能。一个方面，电阻材料(一般是Ni/Cr合金)的刻蚀速率将随着CSA/RSA比例的增加而明显减小。已发现：该比值可达到一个完全禁止电阻层刻蚀的值。作为例子，在图2示出的实施例中，暴露的铜侧壁22a和24a的表面面积明显大于暴露的电阻材料30a的表面面积。同样，还可发现：暴露的铜侧壁24b和26b的表面面积明显大于暴露的电阻材料30b的表面面积。
还发现：使用刻蚀溶液的电阻材料的刻蚀速率也随着暴露的铜对将要刻蚀的电阻材料的逐渐靠近而减小。这样，在图2所示的例子中，随着迹线22、24和26之间的间隔减小，暴露的面积30a、30b相对暴露的铜侧壁22a、24a、24b和26b的尺寸及其相对侧壁22a、24a、24b、和26b的接近度也减小。结果，可以发现：传统刻蚀溶液的刻蚀速率减小。此外，还发现：传统的电阻刻蚀溶液会溶解铜层20上淀积的处理剂。
可以理解的是，通过在利用铜刻蚀剂去掉了不想要的铜之后不从铜层20上去除固化的光致抗蚀剂，可以减小CSA/RSA比值。因而，光致抗蚀剂覆盖着铜层20，同时利用Ni/Cr刻蚀溶液刻蚀掉电阻层30(例如Ni/Cr合金)之不想要的部分。铜层20上的固化光致抗蚀剂减小了暴露的铜的表面面积。
在高密度互联PCB情况中(其中PCB上需要更细的线和更小的间隔用于电互联)，线和其间间隔的尺寸变得更小。但是，人们发现：在将要刻蚀小于大约2-6密耳的间隔时，由于铜相对电阻材料的量很大，因此很难采用传统的电阻刻蚀溶液对电阻材料进行合适的刻蚀。
依照本发明的优选实施例，提供了一种电阻刻蚀溶液，它能在高CsA/RsA比率的情况下，以及在刻蚀间隔很小、例如宽度小于约2-6密耳的情况下提高刻蚀速率。优选的刻蚀溶液尤其适合于刻蚀由镍-铬合金如Ni/Cr/Al/Si合金(举例而非限制)构成的电阻材料。
依照本发明的优选实施例，提供了一种由HCl和硫脲构成的刻蚀溶液。在优选实施例中，电阻刻蚀溶液是由HCl、丙三醇和硫脲组成的溶液。可观察到：硫脲能明显地提高镍一铬合金的刻蚀速率，尤其在高CsA/RsA比率的情况下更是如此。即便在电阻刻蚀过程中铜上没有光致抗蚀剂的情况下，在电阻刻蚀溶液中加入硫脲也可以实施合适的细微特征刻蚀(例如，在暴露面积30a、30b＜6密耳的情况下刻蚀镍-铬合金电阻材料)。
优选的电阻刻蚀溶液包括：范围为5体积％到95体积％(优选约43体积％)的盐酸(按重量计37％的HCl)，范围为5体积％到95体积％(优选约46体积％)的丙三醇，范围在0.1ppm到100克/升(更优选是1ppm到2ppm)的硫脲，以及足以补足100％(总体积％)的水。优选电阻刻蚀溶液的温度范围为室温(约68°F到约77°F)到大约刻蚀溶液的沸点温度(220°F附近)，优选在120°F到180°F范围内，更优选在140°F到150°F范围内。优选地，通过喷射施加电阻刻蚀溶液。
现在通过以下例子进一步描述本发明，其中利用两份类似的刻蚀溶液(一份有硫脲，一份没有硫脲)刻蚀相同的电阻材料。现在参照例1和2，示出有硫脲和没有硫脲的刻蚀时间比较。
例1
刻蚀溶液： HCl(43体积％)
丙三醇(46体积％)
硫脲(2ppm)
水(11体积％)
刻蚀溶液温度： 150
铜薄片(每单位面积的重量)：1 oz./ft2
电阻材料：Ni(56wt％)/Cr(38wt％)/Al(4wt％)/Si(2wt％)
电阻材料厚度：0.1μm
相邻迹线之间的间隔：2-4密耳
刻蚀时间
| 无硫脲 | 有2ppm的硫脲 | |
| 用光致抗蚀剂 | 6分钟 | 3分钟 |
| 不用光致抗蚀剂 | 未刻蚀 | 5分钟 |
例2
刻蚀溶液： HCl(43体积％)
丙三醇(46体积％)
硫脲(2ppm)
水(11体积％)
刻蚀溶液温度：150
铜薄片(每单位面积的重量)：1 oz./ft2
电阻材料：Ni(56wt％)/Cr(38wt％)/Al(4wt％)/Si(2wt％)
电阻材料厚度：0.03μm
相邻迹线之间的间隔：2-4密耳
刻蚀时间
| 无硫脲 | 有2ppm的硫脲 | |
| 用光致抗蚀剂 | 4分钟 | 2分钟 |
| 不用光致抗蚀剂 | 未刻蚀 | 3分钟 |
从例1和2示出的刻蚀时间可以看出，在电阻刻蚀过程中存在光致抗蚀剂时，含硫脲的电阻刻蚀溶液具有明显较高的刻蚀速率。在此，刻蚀时间缩短了大约50％。在去除光致抗蚀剂的情况下，有硫脲的电阻刻蚀溶液促进了电阻刻蚀，而这在不含硫脲的电阻刻蚀溶液情况下是不可能的。
其它人在阅读并理解本说明书的基础上，可以作出其它改进和替换。目的在于，所有这些改进和替换都落在要求保护的本发明的范围或其等效范围。
Claims (15)
1、一种用于由具有铜层和电阻层的电阻薄片形成嵌入式电阻器的方法，该电阻层包括具有铝和硅中至少之一的镍-铬合金，其中所述电阻薄片结合到介电层上，该方法包括：
利用铜刻蚀剂，选择性地去除该铜层的若干部分，以形成迹线；以及
利用由盐酸、丙三醇和硫脲组成的混合刻蚀剂，选择性地刻蚀包括镍-铬合金的该电阻层，其中所述丙三醇在5体积％到95体积％的范围内，所述硫脲在约1ppm到100克/升的范围内。
2、根据权利要求1所述的方法，其中，将光致抗蚀剂施加到该铜层上，以限定所述迹线。
3、根据权利要求2所述的方法，其中，在选择性地刻蚀电阻层之前不除去所述光致抗蚀剂。
4、根据权利要求2所述的方法，其中，在选择性地刻蚀掉电阻层之前，除去所述光致抗蚀剂。
5、根据权利要求1所述的方法，其中，所述盐酸的范围是约43体积％。
6、根据权利要求1所述的方法，其中，所述硫脲的范围为1ppm到20ppm。
7、根据权利要求1所述的方法，其中，所述丙三醇为大约46体积％。
8、根据权利要求1所述的方法，其中，所述混合刻蚀剂还包括水。
9、根据权利要求8所述的方法，其中，所述水的量足以补足100％的总体积％。
10、根据权利要求1所述的方法，其中，所述混合刻蚀剂的温度范围为室温到大约所述混合刻蚀剂的沸点温度。
11、根据权利要求10所述的方法，其中，所述混合刻蚀剂的温度范围为120到180。
12、根据权利要求11所述的方法，其中，所述混合刻蚀剂的温度范围为140到150。
13、根据权利要求1所述的方法，其中，所述镍-铬合金包括铝和硅。
14、根据权利要求13所述的方法，其中，所述镍-铬合金由56重量％的镍、38重量％的铬、4重量％的铝和2重量％的硅制成。
15、根据权利要求1所述的方法，其中，所述硫脲在约1ppm到2ppm的范围内。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/073,503 US6841084B2 (en) | 2002-02-11 | 2002-02-11 | Etching solution for forming an embedded resistor |
| US10/073,503 | 2002-02-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1630917A CN1630917A (zh) | 2005-06-22 |
| CN1328196C true CN1328196C (zh) | 2007-07-25 |
Family
ID=27659687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB038035979A Expired - Fee Related CN1328196C (zh) | 2002-02-11 | 2003-02-03 | 用于形成嵌入式电阻器的刻蚀溶液 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6841084B2 (zh) |
| EP (1) | EP1474811B1 (zh) |
| JP (1) | JP4232871B2 (zh) |
| KR (1) | KR100692606B1 (zh) |
| CN (1) | CN1328196C (zh) |
| DE (1) | DE60327168D1 (zh) |
| TW (1) | TWI284683B (zh) |
| WO (1) | WO2003069636A1 (zh) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW518616B (en) * | 2001-06-01 | 2003-01-21 | Phoenix Prec Technology Corp | Method of manufacturing multi-layer circuit board with embedded passive device |
| US7285229B2 (en) * | 2003-11-07 | 2007-10-23 | Mec Company, Ltd. | Etchant and replenishment solution therefor, and etching method and method for producing wiring board using the same |
| DE502005005467D1 (de) * | 2005-03-16 | 2008-11-06 | Dyconex Ag | Verfahren zum Herstellen eines elektrischen Verbindungselementes, sowie Verbindungselement |
| US20060286742A1 (en) * | 2005-06-21 | 2006-12-21 | Yageo Corporation | Method for fabrication of surface mounted metal foil chip resistors |
| KR101124290B1 (ko) * | 2005-11-03 | 2012-03-27 | 삼성엘이디 주식회사 | 질화물 반도체 레이저 소자 및 그 제조 방법 |
| CN101365300A (zh) * | 2007-08-08 | 2009-02-11 | 富葵精密组件(深圳)有限公司 | 电路板导电线路的制作方法 |
| KR101026000B1 (ko) * | 2009-01-22 | 2011-03-30 | 엘에스엠트론 주식회사 | 저항층 코팅 도전체 및 그 제조방법과 인쇄회로기판 |
| US8486281B2 (en) * | 2009-10-05 | 2013-07-16 | Kesheng Feng | Nickel-chromium alloy stripper for flexible wiring boards |
| US8102042B2 (en) * | 2009-12-03 | 2012-01-24 | International Business Machines Corporation | Reducing plating stub reflections in a chip package using resistive coupling |
| US8143464B2 (en) * | 2011-03-24 | 2012-03-27 | Cool Planet Biofuels, Inc. | Method for making renewable fuels |
| WO2013048834A1 (en) | 2011-09-30 | 2013-04-04 | 3M Innovative Properties Company | Methods of continuously wet etching a patterned substrate |
| JP5920972B2 (ja) * | 2011-12-26 | 2016-05-24 | メック株式会社 | 配線形成方法およびエッチング液 |
| CN103762049A (zh) * | 2013-11-01 | 2014-04-30 | 成都顺康三森电子有限责任公司 | 半导体陶瓷化学镀镍镍电极外沿去除的方法 |
| CN105658576A (zh) * | 2013-12-09 | 2016-06-08 | 哈里伯顿能源服务公司 | 通过增强的脱金属化来浸析超硬材料 |
| JP6429079B2 (ja) * | 2015-02-12 | 2018-11-28 | メック株式会社 | エッチング液及びエッチング方法 |
| CN106048704B (zh) * | 2016-08-05 | 2018-06-19 | 广州三孚新材料科技股份有限公司 | 用于铬锆铜合金的电解刻蚀剂和电解刻蚀方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4160691A (en) * | 1977-12-09 | 1979-07-10 | International Business Machines Corporation | Etch process for chromium |
| US4370197A (en) * | 1981-06-24 | 1983-01-25 | International Business Machines Corporation | Process for etching chrome |
| US4588471A (en) * | 1985-03-25 | 1986-05-13 | International Business Machines Corporation | Process for etching composite chrome layers |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2230156A (en) | 1940-03-06 | 1941-01-28 | Interchem Corp | Lithographic etching solution |
| US2687345A (en) | 1950-11-22 | 1954-08-24 | Printing Dev Inc | Etching composition for lithographic plates |
| US2959555A (en) | 1956-09-28 | 1960-11-08 | Dow Chemical Co | Copper and iron containing scale removal from ferrous metal |
| US3102808A (en) | 1959-01-29 | 1963-09-03 | Eltex Res Corp | Composition for selectively stripping electroplated metals from surfaces |
| US3562040A (en) * | 1967-05-03 | 1971-02-09 | Itt | Method of uniformally and rapidly etching nichrome |
| US3668131A (en) | 1968-08-09 | 1972-06-06 | Allied Chem | Dissolution of metal with acidified hydrogen peroxide solutions |
| US3644155A (en) | 1969-05-01 | 1972-02-22 | Fmc Corp | Cleaning and brightening of lead-tin alloy-resisted circuit boards |
| US3607450A (en) | 1969-09-26 | 1971-09-21 | Us Air Force | Lead sulfide ion implantation mask |
| US3864180A (en) * | 1971-07-23 | 1975-02-04 | Litton Systems Inc | Process for forming thin-film circuit devices |
| DE2834279C2 (de) * | 1978-08-04 | 1980-10-09 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Ätzen von CrNi-Schichten |
| US4311551A (en) | 1979-04-12 | 1982-01-19 | Philip A. Hunt Chemical Corp. | Composition and method for etching copper substrates |
| DD201462A1 (de) * | 1981-12-17 | 1983-07-20 | Albrecht Lerm | Verfahren zum aetzen von nicr-widerstandsschichten |
| US4715894A (en) | 1985-08-29 | 1987-12-29 | Techno Instruments Investments 1983 Ltd. | Use of immersion tin and tin alloys as a bonding medium for multilayer circuits |
| DE3623504A1 (de) | 1986-07-09 | 1988-01-21 | Schering Ag | Kupferaetzloesungen |
| JPH062836B2 (ja) | 1986-08-06 | 1994-01-12 | ポリプラスチックス株式会社 | ポリアセタ−ル樹脂成形品の表面処理法 |
| US4784785A (en) | 1987-12-29 | 1988-11-15 | Macdermid, Incorporated | Copper etchant compositions |
| US5017271A (en) | 1990-08-24 | 1991-05-21 | Gould Inc. | Method for printed circuit board pattern making using selectively etchable metal layers |
| US5428263A (en) | 1992-01-07 | 1995-06-27 | Mitsubishi Denki Kabushiki Kaisha | Discharge cathode device with stress relieving layer and method for manufacturing the same |
| US6150279A (en) | 1998-06-23 | 2000-11-21 | Ku; Amy | Reverse current gold etch |
| US6117250A (en) | 1999-02-25 | 2000-09-12 | Morton International Inc. | Thiazole and thiocarbamide based chemicals for use with oxidative etchant solutions |
| US6086779A (en) * | 1999-03-01 | 2000-07-11 | Mcgean-Rohco, Inc. | Copper etching compositions and method for etching copper |
-
2002
- 2002-02-11 US US10/073,503 patent/US6841084B2/en not_active Expired - Fee Related
-
2003
- 2003-02-03 EP EP03708935A patent/EP1474811B1/en not_active Expired - Fee Related
- 2003-02-03 JP JP2003568671A patent/JP4232871B2/ja not_active Expired - Fee Related
- 2003-02-03 KR KR1020047012044A patent/KR100692606B1/ko not_active IP Right Cessation
- 2003-02-03 WO PCT/US2003/003086 patent/WO2003069636A1/en active Application Filing
- 2003-02-03 CN CNB038035979A patent/CN1328196C/zh not_active Expired - Fee Related
- 2003-02-03 DE DE60327168T patent/DE60327168D1/de not_active Expired - Lifetime
- 2003-02-10 TW TW092102649A patent/TWI284683B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4160691A (en) * | 1977-12-09 | 1979-07-10 | International Business Machines Corporation | Etch process for chromium |
| US4370197A (en) * | 1981-06-24 | 1983-01-25 | International Business Machines Corporation | Process for etching chrome |
| US4588471A (en) * | 1985-03-25 | 1986-05-13 | International Business Machines Corporation | Process for etching composite chrome layers |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030150840A1 (en) | 2003-08-14 |
| KR100692606B1 (ko) | 2007-03-13 |
| KR20040093705A (ko) | 2004-11-08 |
| CN1630917A (zh) | 2005-06-22 |
| EP1474811B1 (en) | 2009-04-15 |
| JP4232871B2 (ja) | 2009-03-04 |
| EP1474811A1 (en) | 2004-11-10 |
| DE60327168D1 (de) | 2009-05-28 |
| EP1474811A4 (en) | 2005-04-06 |
| WO2003069636A1 (en) | 2003-08-21 |
| JP2005517811A (ja) | 2005-06-16 |
| TW200302880A (en) | 2003-08-16 |
| US6841084B2 (en) | 2005-01-11 |
| TWI284683B (en) | 2007-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1328196C (zh) | 用于形成嵌入式电阻器的刻蚀溶液 | |
| EP1087647B1 (en) | Thin integral resistor/capacitor/inductor package, method of manufacture | |
| CN100508699C (zh) | 制造具有无连接盘导通孔的印刷电路板的方法 | |
| US20040000427A1 (en) | Process for creating vias for circuit assemblies | |
| KR100899588B1 (ko) | 인쇄 회로 기판 제조에서 옥사이드 공정을 대체하고 미세라인을 제조하기 위해 구리 포일을 금속 처리하는 인쇄회로 기판 제조 방법 | |
| US6671950B2 (en) | Multi-layer circuit assembly and process for preparing the same | |
| US20040245210A1 (en) | Method for the manufacture of printed circuit boards with embedded resistors | |
| US20020127494A1 (en) | Process for preparing a multi-layer circuit assembly | |
| KR101231273B1 (ko) | 인쇄회로기판 및 그의 제조 방법 | |
| KR100382565B1 (ko) | 매립된 저항을 갖는 인쇄회로기판의 제조방법 | |
| TWI309336B (en) | Integral plated resistor and method for the manufacture of printed circuit boards comprising the same | |
| US20020124398A1 (en) | Multi-layer circuit assembly and process for preparing the same | |
| JP4626282B2 (ja) | 抵抗素子内蔵基板の製造方法 | |
| JP4552624B2 (ja) | 抵抗体内蔵配線基板及びその製造方法 | |
| JP4645212B2 (ja) | 配線回路板内蔵抵抗素子 | |
| WO1988005990A1 (en) | Cladding of substrates with thick metal circuit patterns | |
| JP2006086269A (ja) | 抵抗体内蔵プリント配線板の製造方法 | |
| JPH05152781A (ja) | プリント配線基板の製造法 | |
| JPH04307701A (ja) | プリント配線板とその中間体及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070725 Termination date: 20130203 |