JP6429079B2 - エッチング液及びエッチング方法 - Google Patents
エッチング液及びエッチング方法 Download PDFInfo
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- JP6429079B2 JP6429079B2 JP2015025385A JP2015025385A JP6429079B2 JP 6429079 B2 JP6429079 B2 JP 6429079B2 JP 2015025385 A JP2015025385 A JP 2015025385A JP 2015025385 A JP2015025385 A JP 2015025385A JP 6429079 B2 JP6429079 B2 JP 6429079B2
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- acid
- etching
- etching solution
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- titanium
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Description
硫酸、塩酸、及びトリクロロ酢酸からなる群より選択される少なくとも1種の酸、及び
チオケトン系化合物及びチオエーテル系化合物からなる群より選択される少なくとも1種の有機硫黄化合物を含むことを特徴とする。
樹脂上にスパッタ法でチタン膜を50nm、次いで銅膜を200nm成膜し、さらにその上に電解銅めっきでパターンを形成した基板を試料として用いた。銅のエッチング液を用いて、試料のスパッタ銅膜を溶解してチタン膜を露出させた。その後、実施例1〜12及び比較例1〜3のエッチング液に試料を浸漬してエッチング実験を行った。その結果を表1に示す。
実施例1、7、12及び比較例4のエッチング液を室温下で2日間放置した後、前記エッチング試験を行い、放置前後におけるエッチング速度を比較した。その結果を表2に示す。
Claims (8)
- 銅の存在下でチタンを選択的にエッチングするためのエッチング液であって、
硫酸、塩酸、及びトリクロロ酢酸からなる群より選択される少なくとも1種の酸、及び
チオケトン系化合物及びチオエーテル系化合物からなる群より選択される少なくとも1種の有機硫黄化合物を含むことを特徴とするエッチング液。 - 前記チオケトン系化合物が、チオ尿素、ジエチルチオ尿素、及びトリメチルチオ尿素からなる群より選択される少なくとも1種である請求項1記載のエッチング液。
- 前記チオエーテル系化合物が、メチオニン、エチオニン、及び3−(メチルチオ)プロピオン酸からなる群より選択される少なくとも1種である請求項1又は2記載のエッチング液。
- α−ヒドロキシカルボン酸及び/又はその塩をさらに含む請求項1〜3のいずれかに記載のエッチング液。
- 前記α−ヒドロキシカルボン酸が、酒石酸、リンゴ酸、クエン酸、乳酸、及びグリセリン酸からなる群より選択される少なくとも1種である請求項1〜4のいずれかに記載のエッチング液。
- 前記酸の濃度が、20〜70重量%であり、
前記有機硫黄化合物の濃度が、0.01〜10重量%である請求項1〜5のいずれかに記載のエッチング液。 - 前記α−ヒドロキシカルボン酸及び/又はその塩の濃度が、0.2〜5重量%である請求項4〜6のいずれかに記載のエッチング液。
- 請求項1〜7のいずれかに記載のエッチング液を用いて、銅の存在下でチタンを選択的にエッチングするエッチング方法。
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015025385A JP6429079B2 (ja) | 2015-02-12 | 2015-02-12 | エッチング液及びエッチング方法 |
| KR1020177023507A KR102442989B1 (ko) | 2015-02-12 | 2016-01-21 | 에칭액 및 에칭 방법 |
| EP16748997.0A EP3257969B1 (en) | 2015-02-12 | 2016-01-21 | Etching liquid and etching method |
| PCT/JP2016/051690 WO2016129352A1 (ja) | 2015-02-12 | 2016-01-21 | エッチング液及びエッチング方法 |
| CN201680007726.5A CN107208280B (zh) | 2015-02-12 | 2016-01-21 | 蚀刻液及蚀刻方法 |
| US15/550,752 US20180044801A1 (en) | 2015-02-12 | 2016-01-21 | Etching liquid and etching method |
| TW105103129A TWI680210B (zh) | 2015-02-12 | 2016-02-01 | 蝕刻液及蝕刻方法 |
| US16/707,387 US20200109475A1 (en) | 2015-02-12 | 2019-12-09 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015025385A JP6429079B2 (ja) | 2015-02-12 | 2015-02-12 | エッチング液及びエッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016148081A JP2016148081A (ja) | 2016-08-18 |
| JP6429079B2 true JP6429079B2 (ja) | 2018-11-28 |
Family
ID=56615169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015025385A Active JP6429079B2 (ja) | 2015-02-12 | 2015-02-12 | エッチング液及びエッチング方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20180044801A1 (ja) |
| EP (1) | EP3257969B1 (ja) |
| JP (1) | JP6429079B2 (ja) |
| KR (1) | KR102442989B1 (ja) |
| CN (1) | CN107208280B (ja) |
| TW (1) | TWI680210B (ja) |
| WO (1) | WO2016129352A1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201930647A (zh) * | 2017-12-22 | 2019-08-01 | 德商德國艾托特克公司 | 用於選擇性移除鈀之方法及處理組合物 |
| JP7486294B2 (ja) * | 2019-09-10 | 2024-05-17 | Dowaテクノロジー株式会社 | 洗浄液、洗浄液の製造方法及び設備の洗浄方法 |
| CN114196956B (zh) * | 2020-09-18 | 2024-03-12 | 珠海市丹尼尔电子科技有限公司 | 一种用于钛的蚀刻液 |
| CN115491677B (zh) * | 2022-09-22 | 2023-10-13 | 易安爱富(武汉)科技有限公司 | 一种钛铝钛复合膜层的酸性蚀刻液及制备方法 |
| CN116083910A (zh) * | 2022-12-28 | 2023-05-09 | 湖北兴福电子材料股份有限公司 | 一种钛或钛合金的蚀刻液 |
| CN117448823A (zh) * | 2023-07-06 | 2024-01-26 | 江西斯坦德电极科技有限公司 | 一种钛阳极表面处理蚀刻液 |
| CN117107241A (zh) * | 2023-10-11 | 2023-11-24 | 中南大学 | 一种混酸刻蚀钛基体表面的方法 |
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| JPH06280056A (ja) * | 1993-03-30 | 1994-10-04 | Okuno Chem Ind Co Ltd | スズ又はスズ合金皮膜用剥離剤 |
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-
2015
- 2015-02-12 JP JP2015025385A patent/JP6429079B2/ja active Active
-
2016
- 2016-01-21 KR KR1020177023507A patent/KR102442989B1/ko active Active
- 2016-01-21 WO PCT/JP2016/051690 patent/WO2016129352A1/ja not_active Ceased
- 2016-01-21 EP EP16748997.0A patent/EP3257969B1/en active Active
- 2016-01-21 CN CN201680007726.5A patent/CN107208280B/zh active Active
- 2016-01-21 US US15/550,752 patent/US20180044801A1/en not_active Abandoned
- 2016-02-01 TW TW105103129A patent/TWI680210B/zh active
-
2019
- 2019-12-09 US US16/707,387 patent/US20200109475A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170117434A (ko) | 2017-10-23 |
| JP2016148081A (ja) | 2016-08-18 |
| EP3257969A1 (en) | 2017-12-20 |
| TWI680210B (zh) | 2019-12-21 |
| TW201634753A (zh) | 2016-10-01 |
| KR102442989B1 (ko) | 2022-09-14 |
| EP3257969A4 (en) | 2018-02-21 |
| CN107208280A (zh) | 2017-09-26 |
| US20200109475A1 (en) | 2020-04-09 |
| EP3257969B1 (en) | 2020-04-22 |
| WO2016129352A1 (ja) | 2016-08-18 |
| US20180044801A1 (en) | 2018-02-15 |
| CN107208280B (zh) | 2019-06-07 |
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