WO2016129352A1 - エッチング液及びエッチング方法 - Google Patents
エッチング液及びエッチング方法 Download PDFInfo
- Publication number
- WO2016129352A1 WO2016129352A1 PCT/JP2016/051690 JP2016051690W WO2016129352A1 WO 2016129352 A1 WO2016129352 A1 WO 2016129352A1 JP 2016051690 W JP2016051690 W JP 2016051690W WO 2016129352 A1 WO2016129352 A1 WO 2016129352A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- acid
- etching
- etching solution
- group
- titanium
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
Abstract
Description
硫酸、塩酸、及びトリクロロ酢酸からなる群より選択される少なくとも1種の酸、及び
チオケトン系化合物及びチオエーテル系化合物からなる群より選択される少なくとも1種の有機硫黄化合物を含むことを特徴とする。
樹脂上にスパッタ法でチタン膜を50nm、次いで銅膜を200nm成膜し、さらにその上に電解銅めっきでパターンを形成した基板を試料として用いた。銅のエッチング液を用いて、試料のスパッタ銅膜を溶解してチタン膜を露出させた。その後、実施例1~12及び比較例1~3のエッチング液に試料を浸漬してエッチング実験を行った。その結果を表1に示す。
実施例1、7、12及び比較例4のエッチング液を室温下で2日間放置した後、前記エッチング試験を行い、放置前後におけるエッチング速度を比較した。その結果を表2に示す。
Claims (8)
- 銅の存在下でチタンを選択的にエッチングするためのエッチング液であって、
硫酸、塩酸、及びトリクロロ酢酸からなる群より選択される少なくとも1種の酸、及び
チオケトン系化合物及びチオエーテル系化合物からなる群より選択される少なくとも1種の有機硫黄化合物を含むことを特徴とするエッチング液。 - 前記チオケトン系化合物が、チオ尿素、ジエチルチオ尿素、及びトリメチルチオ尿素からなる群より選択される少なくとも1種である請求項1記載のエッチング液。
- 前記チオエーテル系化合物が、メチオニン、エチオニン、及び3-(メチルチオ)プロピオン酸からなる群より選択される少なくとも1種である請求項1又は2記載のエッチング液。
- α-ヒドロキシカルボン酸及び/又はその塩をさらに含む請求項1~3のいずれかに記載のエッチング液。
- 前記α-ヒドロキシカルボン酸が、酒石酸、リンゴ酸、クエン酸、乳酸、及びグリセリン酸からなる群より選択される少なくとも1種である請求項4記載のエッチング液。
- 前記酸の濃度が、20~70重量%であり、
前記有機硫黄化合物の濃度が、0.01~10重量%である請求項1~5のいずれかに記載のエッチング液。 - 前記α-ヒドロキシカルボン酸及び/又はその塩の濃度が、0.2~5重量%である請求項4~6のいずれかに記載のエッチング液。
- 請求項1~7のいずれかに記載のエッチング液を用いて、銅の存在下でチタンを選択的にエッチングするエッチング方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16748997.0A EP3257969B1 (en) | 2015-02-12 | 2016-01-21 | Etching liquid and etching method |
KR1020177023507A KR102442989B1 (ko) | 2015-02-12 | 2016-01-21 | 에칭액 및 에칭 방법 |
US15/550,752 US20180044801A1 (en) | 2015-02-12 | 2016-01-21 | Etching liquid and etching method |
CN201680007726.5A CN107208280B (zh) | 2015-02-12 | 2016-01-21 | 蚀刻液及蚀刻方法 |
US16/707,387 US20200109475A1 (en) | 2015-02-12 | 2019-12-09 | Etching method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-025385 | 2015-02-12 | ||
JP2015025385A JP6429079B2 (ja) | 2015-02-12 | 2015-02-12 | エッチング液及びエッチング方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/550,752 A-371-Of-International US20180044801A1 (en) | 2015-02-12 | 2016-01-21 | Etching liquid and etching method |
US16/707,387 Division US20200109475A1 (en) | 2015-02-12 | 2019-12-09 | Etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016129352A1 true WO2016129352A1 (ja) | 2016-08-18 |
Family
ID=56615169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/051690 WO2016129352A1 (ja) | 2015-02-12 | 2016-01-21 | エッチング液及びエッチング方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20180044801A1 (ja) |
EP (1) | EP3257969B1 (ja) |
JP (1) | JP6429079B2 (ja) |
KR (1) | KR102442989B1 (ja) |
CN (1) | CN107208280B (ja) |
TW (1) | TWI680210B (ja) |
WO (1) | WO2016129352A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021041323A (ja) * | 2019-09-10 | 2021-03-18 | Dowaテクノロジー株式会社 | 洗浄液、洗浄液の製造方法及び設備の洗浄方法 |
JP7486294B2 (ja) | 2019-09-10 | 2024-05-17 | Dowaテクノロジー株式会社 | 洗浄液、洗浄液の製造方法及び設備の洗浄方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019122055A1 (en) * | 2017-12-22 | 2019-06-27 | Atotech Deutschland Gmbh | A method and treatment composition for selective removal of palladium |
CN114196956B (zh) * | 2020-09-18 | 2024-03-12 | 珠海市丹尼尔电子科技有限公司 | 一种用于钛的蚀刻液 |
CN115491677B (zh) * | 2022-09-22 | 2023-10-13 | 易安爱富(武汉)科技有限公司 | 一种钛铝钛复合膜层的酸性蚀刻液及制备方法 |
CN116083910A (zh) * | 2022-12-28 | 2023-05-09 | 湖北兴福电子材料股份有限公司 | 一种钛或钛合金的蚀刻液 |
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2015
- 2015-02-12 JP JP2015025385A patent/JP6429079B2/ja active Active
-
2016
- 2016-01-21 WO PCT/JP2016/051690 patent/WO2016129352A1/ja active Application Filing
- 2016-01-21 KR KR1020177023507A patent/KR102442989B1/ko active IP Right Grant
- 2016-01-21 CN CN201680007726.5A patent/CN107208280B/zh active Active
- 2016-01-21 EP EP16748997.0A patent/EP3257969B1/en active Active
- 2016-01-21 US US15/550,752 patent/US20180044801A1/en not_active Abandoned
- 2016-02-01 TW TW105103129A patent/TWI680210B/zh active
-
2019
- 2019-12-09 US US16/707,387 patent/US20200109475A1/en not_active Abandoned
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JP2009512194A (ja) * | 2005-10-05 | 2009-03-19 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | ポストエッチング残渣を除去するための酸化性水性洗浄剤 |
JP2013135039A (ja) * | 2011-12-26 | 2013-07-08 | Mec Co Ltd | 配線形成方法およびエッチング液 |
JP2014103179A (ja) * | 2012-11-16 | 2014-06-05 | Fujifilm Corp | 半導体基板のエッチング液、これを用いたエッチング方法及び半導体素子の製造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021041323A (ja) * | 2019-09-10 | 2021-03-18 | Dowaテクノロジー株式会社 | 洗浄液、洗浄液の製造方法及び設備の洗浄方法 |
JP7486294B2 (ja) | 2019-09-10 | 2024-05-17 | Dowaテクノロジー株式会社 | 洗浄液、洗浄液の製造方法及び設備の洗浄方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201634753A (zh) | 2016-10-01 |
JP2016148081A (ja) | 2016-08-18 |
US20200109475A1 (en) | 2020-04-09 |
KR102442989B1 (ko) | 2022-09-14 |
EP3257969B1 (en) | 2020-04-22 |
CN107208280A (zh) | 2017-09-26 |
US20180044801A1 (en) | 2018-02-15 |
TWI680210B (zh) | 2019-12-21 |
JP6429079B2 (ja) | 2018-11-28 |
KR20170117434A (ko) | 2017-10-23 |
CN107208280B (zh) | 2019-06-07 |
EP3257969A1 (en) | 2017-12-20 |
EP3257969A4 (en) | 2018-02-21 |
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