JP2005510072A - 基板表面を研磨するための方法 - Google Patents

基板表面を研磨するための方法 Download PDF

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Publication number
JP2005510072A
JP2005510072A JP2003545445A JP2003545445A JP2005510072A JP 2005510072 A JP2005510072 A JP 2005510072A JP 2003545445 A JP2003545445 A JP 2003545445A JP 2003545445 A JP2003545445 A JP 2003545445A JP 2005510072 A JP2005510072 A JP 2005510072A
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JP
Japan
Prior art keywords
act
polishing
substrate
aln substrate
aln
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Pending
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JP2003545445A
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English (en)
Japanese (ja)
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JP2005510072A5 (https=
Inventor
スコウォルター，レオ，ジェイ．
ロホ，カルロス，ホタ．
ロペス，ハヴィエル マルティネス
モーガン，ケニス
Original Assignee
レンセラール ポリテクニック インスティチュート
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Application filed by レンセラール ポリテクニック インスティチュート filed Critical レンセラール ポリテクニック インスティチュート
Publication of JP2005510072A publication Critical patent/JP2005510072A/ja
Publication of JP2005510072A5 publication Critical patent/JP2005510072A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2003545445A 2001-11-20 2002-11-20 基板表面を研磨するための方法 Pending JP2005510072A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33186801P 2001-11-20 2001-11-20
PCT/US2002/037135 WO2003043780A2 (en) 2001-11-20 2002-11-20 Method for polishing a substrate surface

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012022627A Division JP5628224B2 (ja) 2001-11-20 2012-02-06 基板表面を研磨するための方法

Publications (2)

Publication Number Publication Date
JP2005510072A true JP2005510072A (ja) 2005-04-14
JP2005510072A5 JP2005510072A5 (https=) 2009-04-16

Family

ID=23295726

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003545445A Pending JP2005510072A (ja) 2001-11-20 2002-11-20 基板表面を研磨するための方法
JP2012022627A Expired - Lifetime JP5628224B2 (ja) 2001-11-20 2012-02-06 基板表面を研磨するための方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012022627A Expired - Lifetime JP5628224B2 (ja) 2001-11-20 2012-02-06 基板表面を研磨するための方法

Country Status (8)

Country Link
US (2) US7037838B2 (https=)
EP (1) EP1446263B1 (https=)
JP (2) JP2005510072A (https=)
AT (1) ATE418420T1 (https=)
AU (1) AU2002365979A1 (https=)
CA (1) CA2467806C (https=)
DE (1) DE60230538D1 (https=)
WO (1) WO2003043780A2 (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281671A (ja) * 2003-03-14 2004-10-07 Ricoh Co Ltd Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス
JP2011049610A (ja) * 2010-12-10 2011-03-10 Sumitomo Electric Ind Ltd ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス
WO2016039116A1 (ja) * 2014-09-11 2016-03-17 株式会社トクヤマ 窒化アルミニウム単結晶基板の洗浄方法および積層体
JP2018170491A (ja) * 2016-11-29 2018-11-01 パロ アルト リサーチ センター インコーポレイテッド 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法
US10208400B2 (en) 2015-02-02 2019-02-19 Fuji Electric Co., Ltd. Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
JP2021104547A (ja) * 2019-12-26 2021-07-26 ニッタ・デュポン株式会社 研磨スラリー
WO2023277103A1 (ja) * 2021-06-30 2023-01-05 京セラ株式会社 周期表第１３族元素窒化物結晶基板の製造方法

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US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8025808B2 (en) * 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
JP4752214B2 (ja) * 2004-08-20 2011-08-17 住友電気工業株式会社 エピタキシャル層形成用ＡｌＮ結晶の表面処理方法
JP4792802B2 (ja) * 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
JP5283502B2 (ja) * 2005-05-11 2013-09-04 ノース・キャロライナ・ステイト・ユニヴァーシティ 極性が制御されたｉｉｉ族窒化物薄膜及びその製法
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
US7670902B2 (en) * 2005-07-26 2010-03-02 Semiconductor Manufacturing International (Shanghai) Corporation Method and structure for landing polysilicon contact
RU2320466C2 (ru) * 2005-11-23 2008-03-27 Ооо "Нитридные Кристаллы" Способ полирования поверхности подложки
EP1960570A2 (en) * 2005-11-28 2008-08-27 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
JP5281408B2 (ja) * 2005-12-02 2013-09-04 クリスタル・イズ，インコーポレイテッド ドープされた窒化アルミニウム結晶及びそれを製造する方法
EP2007933B1 (en) 2006-03-30 2017-05-10 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US9034103B2 (en) * 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2008060505A1 (en) * 2006-11-15 2008-05-22 Cabot Microelectronics Corporation Methods for polishing aluminum nitride
CN101588894B (zh) * 2006-12-20 2013-03-27 圣戈本陶瓷及塑料股份有限公司 机械加工无机非金属工件的方法
US8323406B2 (en) 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US8210904B2 (en) * 2008-04-29 2012-07-03 International Business Machines Corporation Slurryless mechanical planarization for substrate reclamation
US7915178B2 (en) 2008-07-30 2011-03-29 North Carolina State University Passivation of aluminum nitride substrates
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
WO2012003304A1 (en) 2010-06-30 2012-01-05 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
WO2012012384A1 (en) 2010-07-20 2012-01-26 Hexatech, Inc. Polycrystalline aluminum nitride material and method of production thereof
US9299594B2 (en) 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same
JP5319628B2 (ja) * 2010-08-26 2013-10-16 シャープ株式会社 窒化物半導体素子および半導体光学装置
WO2012082729A1 (en) 2010-12-14 2012-06-21 Hexatech, Inc. Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies, and application to the manufacture of semi-conductors
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
DE112018005414T5 (de) 2017-11-10 2020-07-09 Crystal Is, Inc. Große, UV-Transparente Aluminiumnitrid-Einkristalle und Verfahren zu ihrer Herstellung
CN114667371B (zh) 2019-08-15 2025-05-13 晶化成半导体公司 氮化铝晶体的扩径
CN116249754A (zh) * 2020-07-29 2023-06-09 弗萨姆材料美国有限责任公司 用于铜和硅通孔(tsv)的化学机械平面化(cmp)的瓶中垫(pib)技术
KR20240036661A (ko) * 2021-07-23 2024-03-20 버슘머트리얼즈 유에스, 엘엘씨 구리 배리어 슬러리를 위한 패드-인-어-보틀(pib) 기술
KR20240101835A (ko) * 2021-11-10 2024-07-02 버슘머트리얼즈 유에스, 엘엘씨 비용 효율적인 비-다공성 고체 연마 패드를 사용하는 패드-인-어-보틀 화학적 기계적 평탄화 연마

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JPH04315457A (ja) * 1991-04-15 1992-11-06 Toshiba Corp ＡｌＮ回路基板
JPH04355920A (ja) * 1991-01-31 1992-12-09 Shin Etsu Handotai Co Ltd 半導体素子形成用基板およびその製造方法
JPH077237A (ja) * 1993-06-14 1995-01-10 Ibiden Co Ltd セラミックス基板、セラミックス基板の表面処理方法、セラミックス基板の粗化面への薄膜形成方法
JP2002016023A (ja) * 2000-06-30 2002-01-18 Shin Etsu Handotai Co Ltd 薄板の加工方法
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JPH04355920A (ja) * 1991-01-31 1992-12-09 Shin Etsu Handotai Co Ltd 半導体素子形成用基板およびその製造方法
JPH04315457A (ja) * 1991-04-15 1992-11-06 Toshiba Corp ＡｌＮ回路基板
JPH077237A (ja) * 1993-06-14 1995-01-10 Ibiden Co Ltd セラミックス基板、セラミックス基板の表面処理方法、セラミックス基板の粗化面への薄膜形成方法
JP2002083793A (ja) * 2000-06-28 2002-03-22 Internatl Business Mach Corp <Ibm> 化学機械研磨における終点検出方法
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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281671A (ja) * 2003-03-14 2004-10-07 Ricoh Co Ltd Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス
JP2011049610A (ja) * 2010-12-10 2011-03-10 Sumitomo Electric Ind Ltd ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス
US10753011B2 (en) 2014-09-11 2020-08-25 Tokuyama Corporation Cleaning method and laminate of aluminum nitride single-crystal substrate
JPWO2016039116A1 (ja) * 2014-09-11 2017-06-29 株式会社トクヤマ 窒化アルミニウム単結晶基板の洗浄方法および積層体
WO2016039116A1 (ja) * 2014-09-11 2016-03-17 株式会社トクヤマ 窒化アルミニウム単結晶基板の洗浄方法および積層体
US11952677B2 (en) 2014-09-11 2024-04-09 Tokuyama Corporation Laminate of aluminum nitride single-crystal substrate
US10208400B2 (en) 2015-02-02 2019-02-19 Fuji Electric Co., Ltd. Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
JP2018170491A (ja) * 2016-11-29 2018-11-01 パロ アルト リサーチ センター インコーポレイテッド 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法
JP2022028712A (ja) * 2016-11-29 2022-02-16 パロ アルト リサーチ センター インコーポレイテッド 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法
JP7216790B2 (ja) 2016-11-29 2023-02-01 パロ アルト リサーチ センター インコーポレイテッド 薄膜および基板除去ｉｉｉ族窒化物ベースのデバイスおよび方法
JP2021104547A (ja) * 2019-12-26 2021-07-26 ニッタ・デュポン株式会社 研磨スラリー
WO2023277103A1 (ja) * 2021-06-30 2023-01-05 京セラ株式会社 周期表第１３族元素窒化物結晶基板の製造方法
JPWO2023277103A1 (https=) * 2021-06-30 2023-01-05
JP7650355B2 (ja) 2021-06-30 2025-03-24 京セラ株式会社 周期表第１３族元素窒化物結晶基板の製造方法

Also Published As

Publication number Publication date
EP1446263A2 (en) 2004-08-18
US20040033690A1 (en) 2004-02-19
US7323414B2 (en) 2008-01-29
ATE418420T1 (de) 2009-01-15
US7037838B2 (en) 2006-05-02
WO2003043780B1 (en) 2003-10-30
CA2467806A1 (en) 2003-05-30
CA2467806C (en) 2011-04-19
HK1068840A1 (en) 2005-05-06
US20070289946A1 (en) 2007-12-20
AU2002365979A8 (en) 2003-06-10
AU2002365979A1 (en) 2003-06-10
JP5628224B2 (ja) 2014-11-19
EP1446263B1 (en) 2008-12-24
WO2003043780A2 (en) 2003-05-30
DE60230538D1 (de) 2009-02-05
JP2012134515A (ja) 2012-07-12
WO2003043780A3 (en) 2003-08-28

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