ATE418420T1 - Verfahren zum polieren der oberfläche eines substrats - Google Patents

Verfahren zum polieren der oberfläche eines substrats

Info

Publication number
ATE418420T1
ATE418420T1 AT02803675T AT02803675T ATE418420T1 AT E418420 T1 ATE418420 T1 AT E418420T1 AT 02803675 T AT02803675 T AT 02803675T AT 02803675 T AT02803675 T AT 02803675T AT E418420 T1 ATE418420 T1 AT E418420T1
Authority
AT
Austria
Prior art keywords
substrate
polishing
cmp
improved
cmp process
Prior art date
Application number
AT02803675T
Other languages
German (de)
English (en)
Inventor
Leo Schowalter
Carlos Rojo
Lopez Javier Martinez
Kenneth Morgan
Original Assignee
Rensselaer Polytech Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytech Inst filed Critical Rensselaer Polytech Inst
Application granted granted Critical
Publication of ATE418420T1 publication Critical patent/ATE418420T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT02803675T 2001-11-20 2002-11-20 Verfahren zum polieren der oberfläche eines substrats ATE418420T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33186801P 2001-11-20 2001-11-20

Publications (1)

Publication Number Publication Date
ATE418420T1 true ATE418420T1 (de) 2009-01-15

Family

ID=23295726

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02803675T ATE418420T1 (de) 2001-11-20 2002-11-20 Verfahren zum polieren der oberfläche eines substrats

Country Status (8)

Country Link
US (2) US7037838B2 (https=)
EP (1) EP1446263B1 (https=)
JP (2) JP2005510072A (https=)
AT (1) ATE418420T1 (https=)
AU (1) AU2002365979A1 (https=)
CA (1) CA2467806C (https=)
DE (1) DE60230538D1 (https=)
WO (1) WO2003043780A2 (https=)

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JP5283502B2 (ja) * 2005-05-11 2013-09-04 ノース・キャロライナ・ステイト・ユニヴァーシティ 極性が制御されたｉｉｉ族窒化物薄膜及びその製法
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EP1960570A2 (en) * 2005-11-28 2008-08-27 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
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US9034103B2 (en) * 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2008060505A1 (en) * 2006-11-15 2008-05-22 Cabot Microelectronics Corporation Methods for polishing aluminum nitride
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US8323406B2 (en) 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US8210904B2 (en) * 2008-04-29 2012-07-03 International Business Machines Corporation Slurryless mechanical planarization for substrate reclamation
US7915178B2 (en) 2008-07-30 2011-03-29 North Carolina State University Passivation of aluminum nitride substrates
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WO2012012384A1 (en) 2010-07-20 2012-01-26 Hexatech, Inc. Polycrystalline aluminum nitride material and method of production thereof
US9299594B2 (en) 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same
JP5319628B2 (ja) * 2010-08-26 2013-10-16 シャープ株式会社 窒化物半導体素子および半導体光学装置
JP2011049610A (ja) * 2010-12-10 2011-03-10 Sumitomo Electric Ind Ltd ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス
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US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
WO2016039116A1 (ja) * 2014-09-11 2016-03-17 株式会社トクヤマ 窒化アルミニウム単結晶基板の洗浄方法および積層体
WO2016125404A1 (ja) 2015-02-02 2016-08-11 富士電機株式会社 炭化ケイ素半導体装置の製造方法及び炭化ケイ素半導体装置
US10249786B2 (en) * 2016-11-29 2019-04-02 Palo Alto Research Center Incorporated Thin film and substrate-removed group III-nitride based devices and method
DE112018005414T5 (de) 2017-11-10 2020-07-09 Crystal Is, Inc. Große, UV-Transparente Aluminiumnitrid-Einkristalle und Verfahren zu ihrer Herstellung
CN114667371B (zh) 2019-08-15 2025-05-13 晶化成半导体公司 氮化铝晶体的扩径
JP2021104547A (ja) * 2019-12-26 2021-07-26 ニッタ・デュポン株式会社 研磨スラリー
CN116249754A (zh) * 2020-07-29 2023-06-09 弗萨姆材料美国有限责任公司 用于铜和硅通孔(tsv)的化学机械平面化(cmp)的瓶中垫(pib)技术
JP7650355B2 (ja) * 2021-06-30 2025-03-24 京セラ株式会社 周期表第１３族元素窒化物結晶基板の製造方法
KR20240036661A (ko) * 2021-07-23 2024-03-20 버슘머트리얼즈 유에스, 엘엘씨 구리 배리어 슬러리를 위한 패드-인-어-보틀(pib) 기술
KR20240101835A (ko) * 2021-11-10 2024-07-02 버슘머트리얼즈 유에스, 엘엘씨 비용 효율적인 비-다공성 고체 연마 패드를 사용하는 패드-인-어-보틀 화학적 기계적 평탄화 연마

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Also Published As

Publication number Publication date
EP1446263A2 (en) 2004-08-18
US20040033690A1 (en) 2004-02-19
US7323414B2 (en) 2008-01-29
US7037838B2 (en) 2006-05-02
WO2003043780B1 (en) 2003-10-30
CA2467806A1 (en) 2003-05-30
CA2467806C (en) 2011-04-19
HK1068840A1 (en) 2005-05-06
US20070289946A1 (en) 2007-12-20
AU2002365979A8 (en) 2003-06-10
AU2002365979A1 (en) 2003-06-10
JP5628224B2 (ja) 2014-11-19
EP1446263B1 (en) 2008-12-24
WO2003043780A2 (en) 2003-05-30
JP2005510072A (ja) 2005-04-14
DE60230538D1 (de) 2009-02-05
JP2012134515A (ja) 2012-07-12
WO2003043780A3 (en) 2003-08-28

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