JP2005510072A5 - - Google Patents

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Publication number
JP2005510072A5
JP2005510072A5 JP2003545445A JP2003545445A JP2005510072A5 JP 2005510072 A5 JP2005510072 A5 JP 2005510072A5 JP 2003545445 A JP2003545445 A JP 2003545445A JP 2003545445 A JP2003545445 A JP 2003545445A JP 2005510072 A5 JP2005510072 A5 JP 2005510072A5
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JP
Japan
Prior art keywords
act
aln
substrate
aln substrate
polishing
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Pending
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JP2003545445A
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English (en)
Japanese (ja)
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JP2005510072A (ja
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Priority claimed from PCT/US2002/037135 external-priority patent/WO2003043780A2/en
Publication of JP2005510072A publication Critical patent/JP2005510072A/ja
Publication of JP2005510072A5 publication Critical patent/JP2005510072A5/ja
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JP2003545445A 2001-11-20 2002-11-20 基板表面を研磨するための方法 Pending JP2005510072A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33186801P 2001-11-20 2001-11-20
PCT/US2002/037135 WO2003043780A2 (en) 2001-11-20 2002-11-20 Method for polishing a substrate surface

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012022627A Division JP5628224B2 (ja) 2001-11-20 2012-02-06 基板表面を研磨するための方法

Publications (2)

Publication Number Publication Date
JP2005510072A JP2005510072A (ja) 2005-04-14
JP2005510072A5 true JP2005510072A5 (https=) 2009-04-16

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ID=23295726

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003545445A Pending JP2005510072A (ja) 2001-11-20 2002-11-20 基板表面を研磨するための方法
JP2012022627A Expired - Lifetime JP5628224B2 (ja) 2001-11-20 2012-02-06 基板表面を研磨するための方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012022627A Expired - Lifetime JP5628224B2 (ja) 2001-11-20 2012-02-06 基板表面を研磨するための方法

Country Status (8)

Country Link
US (2) US7037838B2 (https=)
EP (1) EP1446263B1 (https=)
JP (2) JP2005510072A (https=)
AT (1) ATE418420T1 (https=)
AU (1) AU2002365979A1 (https=)
CA (1) CA2467806C (https=)
DE (1) DE60230538D1 (https=)
WO (1) WO2003043780A2 (https=)

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EP1960570A2 (en) * 2005-11-28 2008-08-27 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
JP5281408B2 (ja) * 2005-12-02 2013-09-04 クリスタル・イズ，インコーポレイテッド ドープされた窒化アルミニウム結晶及びそれを製造する方法
EP2007933B1 (en) 2006-03-30 2017-05-10 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US9034103B2 (en) * 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2008060505A1 (en) * 2006-11-15 2008-05-22 Cabot Microelectronics Corporation Methods for polishing aluminum nitride
CN101588894B (zh) * 2006-12-20 2013-03-27 圣戈本陶瓷及塑料股份有限公司 机械加工无机非金属工件的方法
US8323406B2 (en) 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US8210904B2 (en) * 2008-04-29 2012-07-03 International Business Machines Corporation Slurryless mechanical planarization for substrate reclamation
US7915178B2 (en) 2008-07-30 2011-03-29 North Carolina State University Passivation of aluminum nitride substrates
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
WO2012003304A1 (en) 2010-06-30 2012-01-05 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
WO2012012384A1 (en) 2010-07-20 2012-01-26 Hexatech, Inc. Polycrystalline aluminum nitride material and method of production thereof
US9299594B2 (en) 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same
JP5319628B2 (ja) * 2010-08-26 2013-10-16 シャープ株式会社 窒化物半導体素子および半導体光学装置
JP2011049610A (ja) * 2010-12-10 2011-03-10 Sumitomo Electric Ind Ltd ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス
WO2012082729A1 (en) 2010-12-14 2012-06-21 Hexatech, Inc. Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies, and application to the manufacture of semi-conductors
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
WO2016039116A1 (ja) * 2014-09-11 2016-03-17 株式会社トクヤマ 窒化アルミニウム単結晶基板の洗浄方法および積層体
WO2016125404A1 (ja) 2015-02-02 2016-08-11 富士電機株式会社 炭化ケイ素半導体装置の製造方法及び炭化ケイ素半導体装置
US10249786B2 (en) * 2016-11-29 2019-04-02 Palo Alto Research Center Incorporated Thin film and substrate-removed group III-nitride based devices and method
DE112018005414T5 (de) 2017-11-10 2020-07-09 Crystal Is, Inc. Große, UV-Transparente Aluminiumnitrid-Einkristalle und Verfahren zu ihrer Herstellung
CN114667371B (zh) 2019-08-15 2025-05-13 晶化成半导体公司 氮化铝晶体的扩径
JP2021104547A (ja) * 2019-12-26 2021-07-26 ニッタ・デュポン株式会社 研磨スラリー
CN116249754A (zh) * 2020-07-29 2023-06-09 弗萨姆材料美国有限责任公司 用于铜和硅通孔(tsv)的化学机械平面化(cmp)的瓶中垫(pib)技术
JP7650355B2 (ja) * 2021-06-30 2025-03-24 京セラ株式会社 周期表第１３族元素窒化物結晶基板の製造方法
KR20240036661A (ko) * 2021-07-23 2024-03-20 버슘머트리얼즈 유에스, 엘엘씨 구리 배리어 슬러리를 위한 패드-인-어-보틀(pib) 기술
KR20240101835A (ko) * 2021-11-10 2024-07-02 버슘머트리얼즈 유에스, 엘엘씨 비용 효율적인 비-다공성 고체 연마 패드를 사용하는 패드-인-어-보틀 화학적 기계적 평탄화 연마

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