JP2005509298A5 - - Google Patents
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- JP2005509298A5 JP2005509298A5 JP2003543117A JP2003543117A JP2005509298A5 JP 2005509298 A5 JP2005509298 A5 JP 2005509298A5 JP 2003543117 A JP2003543117 A JP 2003543117A JP 2003543117 A JP2003543117 A JP 2003543117A JP 2005509298 A5 JP2005509298 A5 JP 2005509298A5
- Authority
- JP
- Japan
- Prior art keywords
- polymer layer
- transistor
- groups
- poly
- organic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229920000642 polymer Polymers 0.000 claims 15
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000000463 material Substances 0.000 claims 4
- 125000001931 aliphatic group Chemical group 0.000 claims 3
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims 3
- 125000003118 aryl group Chemical group 0.000 claims 3
- -1 bromo, carboxy Chemical group 0.000 claims 3
- 229920001577 copolymer Polymers 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 125000000524 functional group Chemical group 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 claims 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims 2
- 125000003710 aryl alkyl group Chemical group 0.000 claims 2
- 125000004122 cyclic group Chemical group 0.000 claims 2
- 239000007772 electrode material Substances 0.000 claims 2
- 125000005842 heteroatom Chemical group 0.000 claims 2
- 239000000178 monomer Substances 0.000 claims 2
- 229920006120 non-fluorinated polymer Polymers 0.000 claims 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- IGGDKDTUCAWDAN-UHFFFAOYSA-N 1-vinylnaphthalene Chemical compound C1=CC=C2C(C=C)=CC=CC2=C1 IGGDKDTUCAWDAN-UHFFFAOYSA-N 0.000 claims 1
- KUJYDIFFRDAYDH-UHFFFAOYSA-N 2-thiophen-2-yl-5-[5-[5-(5-thiophen-2-ylthiophen-2-yl)thiophen-2-yl]thiophen-2-yl]thiophene Chemical compound C1=CSC(C=2SC(=CC=2)C=2SC(=CC=2)C=2SC(=CC=2)C=2SC(=CC=2)C=2SC=CC=2)=C1 KUJYDIFFRDAYDH-UHFFFAOYSA-N 0.000 claims 1
- ZCAPDAJQDNCVAE-UHFFFAOYSA-N 5,6,7,8,14,15,16,17,23,24,25,26,32,33,34,35-hexadecafluoro-2,11,20,29,37,38,39,40-octazanonacyclo[28.6.1.13,10.112,19.121,28.04,9.013,18.022,27.031,36]tetraconta-1,3,5,7,9,11,13(18),14,16,19,21(38),22(27),23,25,28,30(37),31(36),32,34-nonadecaene Chemical compound C12=C(F)C(F)=C(F)C(F)=C2C(N=C2NC(C3=C(F)C(F)=C(F)C(F)=C32)=N2)=NC1=NC([C]1C(F)=C(F)C(F)=C(F)C1=1)=NC=1N=C1[C]3C(F)=C(F)C(F)=C(F)C3=C2N1 ZCAPDAJQDNCVAE-UHFFFAOYSA-N 0.000 claims 1
- 229920003026 Acene Polymers 0.000 claims 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims 1
- 239000004793 Polystyrene Substances 0.000 claims 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 claims 1
- 125000004054 acenaphthylenyl group Chemical group C1(=CC2=CC=CC3=CC=CC1=C23)* 0.000 claims 1
- HXGDTGSAIMULJN-UHFFFAOYSA-N acetnaphthylene Natural products C1=CC(C=C2)=C3C2=CC=CC3=C1 HXGDTGSAIMULJN-UHFFFAOYSA-N 0.000 claims 1
- 125000004423 acyloxy group Chemical group 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 150000001408 amides Chemical class 0.000 claims 1
- 125000004104 aryloxy group Chemical group 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 125000001309 chloro group Chemical group Cl* 0.000 claims 1
- 150000001993 dienes Chemical class 0.000 claims 1
- 229910003472 fullerene Inorganic materials 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 claims 1
- 150000002825 nitriles Chemical class 0.000 claims 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 claims 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims 1
- 150000002964 pentacenes Chemical class 0.000 claims 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 claims 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 1
- 229920000052 poly(p-xylylene) Polymers 0.000 claims 1
- 229920000412 polyarylene Polymers 0.000 claims 1
- 229920002098 polyfluorene Polymers 0.000 claims 1
- 239000004926 polymethyl methacrylate Substances 0.000 claims 1
- 229920002223 polystyrene Polymers 0.000 claims 1
- 229920002689 polyvinyl acetate Polymers 0.000 claims 1
- 239000011118 polyvinyl acetate Substances 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 claims 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/012,654 US6946676B2 (en) | 2001-11-05 | 2001-11-05 | Organic thin film transistor with polymeric interface |
| PCT/US2002/033872 WO2003041185A2 (en) | 2001-11-05 | 2002-10-23 | Organic thin film transistor with polymeric interface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005509298A JP2005509298A (ja) | 2005-04-07 |
| JP2005509298A5 true JP2005509298A5 (enExample) | 2006-01-05 |
Family
ID=21756035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003543117A Pending JP2005509298A (ja) | 2001-11-05 | 2002-10-23 | ポリマー界面を有する有機薄膜トランジスタ |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US6946676B2 (enExample) |
| EP (1) | EP1442484A2 (enExample) |
| JP (1) | JP2005509298A (enExample) |
| KR (1) | KR20050039731A (enExample) |
| AU (1) | AU2002337959A1 (enExample) |
| WO (1) | WO2003041185A2 (enExample) |
Families Citing this family (96)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0024294D0 (en) * | 2000-10-04 | 2000-11-15 | Univ Cambridge Tech | Solid state embossing of polymer devices |
| US6998068B2 (en) * | 2003-08-15 | 2006-02-14 | 3M Innovative Properties Company | Acene-thiophene semiconductors |
| US6946676B2 (en) * | 2001-11-05 | 2005-09-20 | 3M Innovative Properties Company | Organic thin film transistor with polymeric interface |
| CA2469912A1 (en) * | 2001-12-19 | 2003-06-26 | Avecia Limited | Organic field effect transistor with an organic dielectric |
| JP4136482B2 (ja) * | 2002-06-20 | 2008-08-20 | キヤノン株式会社 | 有機半導体素子、その製造方法および有機半導体装置 |
| DE10228772A1 (de) * | 2002-06-27 | 2004-01-15 | Infineon Technologies Ag | Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren mit Palladiumkontakten durch Verwendung von Nitrilen und Isonitrilen |
| JP4635410B2 (ja) * | 2002-07-02 | 2011-02-23 | ソニー株式会社 | 半導体装置及びその製造方法 |
| US6784017B2 (en) * | 2002-08-12 | 2004-08-31 | Precision Dynamics Corporation | Method of creating a high performance organic semiconductor device |
| US7088145B2 (en) * | 2002-12-23 | 2006-08-08 | 3M Innovative Properties Company | AC powered logic circuitry |
| US7061570B2 (en) * | 2003-03-26 | 2006-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US7279777B2 (en) * | 2003-05-08 | 2007-10-09 | 3M Innovative Properties Company | Organic polymers, laminates, and capacitors |
| US7098525B2 (en) * | 2003-05-08 | 2006-08-29 | 3M Innovative Properties Company | Organic polymers, electronic devices, and methods |
| JP4470398B2 (ja) * | 2003-06-23 | 2010-06-02 | Ｔｄｋ株式会社 | 電界効果トランジスタ |
| KR100995451B1 (ko) * | 2003-07-03 | 2010-11-18 | 삼성전자주식회사 | 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터 |
| JP4228204B2 (ja) * | 2003-07-07 | 2009-02-25 | セイコーエプソン株式会社 | 有機トランジスタの製造方法 |
| US7109519B2 (en) * | 2003-07-15 | 2006-09-19 | 3M Innovative Properties Company | Bis(2-acenyl)acetylene semiconductors |
| US20070178710A1 (en) * | 2003-08-18 | 2007-08-02 | 3M Innovative Properties Company | Method for sealing thin film transistors |
| WO2005020342A1 (ja) * | 2003-08-22 | 2005-03-03 | Matsushita Electric Industrial Co., Ltd. | 縦型有機ｆｅｔ及びその製造方法 |
| JP2005072528A (ja) * | 2003-08-28 | 2005-03-17 | Shin Etsu Chem Co Ltd | 薄層電界効果トランジスター及びその製造方法 |
| WO2005031813A2 (en) * | 2003-09-24 | 2005-04-07 | E.I. Dupont De Nemours And Company | Method for forming pentacene film |
| JP2005136383A (ja) * | 2003-10-09 | 2005-05-26 | Canon Inc | 有機半導体素子、その製造方法および有機半導体装置 |
| US8450723B2 (en) | 2003-11-04 | 2013-05-28 | Alcatel Lucent | Apparatus having an aromatic dielectric and an aromatic organic semiconductor including an alkyl chain |
| US7767998B2 (en) * | 2003-12-04 | 2010-08-03 | Alcatel-Lucent Usa Inc. | OFETs with active channels formed of densified layers |
| US20050130422A1 (en) * | 2003-12-12 | 2005-06-16 | 3M Innovative Properties Company | Method for patterning films |
| US7078937B2 (en) | 2003-12-17 | 2006-07-18 | 3M Innovative Properties Company | Logic circuitry powered by partially rectified ac waveform |
| JP4661065B2 (ja) * | 2004-03-22 | 2011-03-30 | セイコーエプソン株式会社 | 相補型有機半導体装置 |
| NO321555B1 (no) * | 2004-03-26 | 2006-05-29 | Thin Film Electronics Asa | Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning |
| KR100615216B1 (ko) * | 2004-04-29 | 2006-08-25 | 삼성에스디아이 주식회사 | 유기 억셉터막을 구비한 유기 박막 트랜지스터 |
| DE102004025423B4 (de) * | 2004-05-24 | 2008-03-06 | Qimonda Ag | Dünnfilm-Feldeffekt-Transistor mit Gate-Dielektrikum aus organischem Material und Verfahren zu dessen Herstellung |
| KR101039024B1 (ko) | 2004-06-14 | 2011-06-03 | 삼성전자주식회사 | 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법 |
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| US20060231829A1 (en) * | 2005-04-13 | 2006-10-19 | Xerox Corporation | TFT gate dielectric with crosslinked polymer |
| TW200703664A (en) * | 2005-05-31 | 2007-01-16 | Nat University Iwate Univ Inc | Organic thin film transistor |
| GB0511132D0 (en) * | 2005-06-01 | 2005-07-06 | Plastic Logic Ltd | Layer-selective laser ablation patterning |
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| KR100719566B1 (ko) * | 2005-10-22 | 2007-05-17 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 및 이를 구비한 평판 표시 장치 |
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| GB0601008D0 (en) * | 2006-01-18 | 2006-03-01 | Qinetiq Ltd | Method of fabricating a semicondutor device |
| US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
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| JP5062435B2 (ja) * | 2006-02-27 | 2012-10-31 | 株式会社村田製作所 | 電界効果トランジスタ |
| WO2007099690A1 (ja) * | 2006-02-28 | 2007-09-07 | Pioneer Corporation | 有機トランジスタ及びその製造方法 |
| JP4887848B2 (ja) * | 2006-03-15 | 2012-02-29 | セイコーエプソン株式会社 | 回路基板、電気光学装置および電子機器 |
| JP2007251093A (ja) * | 2006-03-20 | 2007-09-27 | Nippon Zeon Co Ltd | ゲート絶縁膜、有機薄膜トランジスタ、該トランジスタの製造方法及び表示装置 |
| US7667230B2 (en) * | 2006-03-31 | 2010-02-23 | 3M Innovative Properties Company | Electronic devices containing acene-thiophene copolymers |
| US7608679B2 (en) * | 2006-03-31 | 2009-10-27 | 3M Innovative Properties Company | Acene-thiophene copolymers |
| US7372071B2 (en) * | 2006-04-06 | 2008-05-13 | Xerox Corporation | Functionalized heteroacenes and electronic devices generated therefrom |
| US7557370B2 (en) * | 2006-04-06 | 2009-07-07 | Xerox Corporation | Heteroacene polymers and electronic devices generated therefrom |
| US7666968B2 (en) * | 2006-04-21 | 2010-02-23 | 3M Innovative Properties Company | Acene-thiophene copolymers with silethynly groups |
| US7495251B2 (en) * | 2006-04-21 | 2009-02-24 | 3M Innovative Properties Company | Electronic devices containing acene-thiophene copolymers with silylethynyl groups |
| US7919825B2 (en) * | 2006-06-02 | 2011-04-05 | Air Products And Chemicals, Inc. | Thin film transistors with poly(arylene ether) polymers as gate dielectrics and passivation layers |
| US20080012074A1 (en) * | 2006-07-14 | 2008-01-17 | Air Products And Chemicals, Inc. | Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors |
| US8388790B2 (en) * | 2006-07-21 | 2013-03-05 | Leonhard Kurz Stiftung & Co. Kg | Multilayered body comprising an electroconductive polymer layer and method for the production thereof |
| DE102006033887B4 (de) * | 2006-07-21 | 2015-04-09 | Leonhard Kurz Gmbh & Co. Kg | Verfahren zur Herstellung eines Mehrschichtkörpers mit leitfähiger Polymerschicht |
| US20080224127A1 (en) * | 2006-08-22 | 2008-09-18 | Marks Tobin J | Gate dielectric structures, organic semiconductors, thin film transistors and related methods |
| KR100737383B1 (ko) * | 2006-09-11 | 2007-07-09 | 한국전자통신연구원 | 절연막, 이를 이용한 유기박막 트랜지스터 및 제조방법 |
| KR20080040119A (ko) * | 2006-11-02 | 2008-05-08 | 삼성전자주식회사 | 디클로로포스포릴기를 함유하는 자기조립단분자막 형성화합물을 이용한 유기박막 트랜지스터의 제조방법 |
| WO2008065927A1 (fr) * | 2006-11-27 | 2008-06-05 | Zeon Corporation | Transistor à film fin organique, élément électronique composite organique, procédé de fabrication d'un tel transistor et d'un tel élément, écran d'affichage et mémoire |
| EP1936712A1 (en) * | 2006-12-23 | 2008-06-25 | ETH Zürich | Organic field-effect transistors with polymeric gate dielectric and method for making same |
| JP5234533B2 (ja) * | 2007-03-26 | 2013-07-10 | 国立大学法人九州大学 | 有機半導体素子およびその製造方法 |
| JP5320746B2 (ja) * | 2007-03-28 | 2013-10-23 | 凸版印刷株式会社 | 薄膜トランジスタ |
| JP2008244362A (ja) * | 2007-03-28 | 2008-10-09 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置、半導体回路、電気光学装置および電子機器 |
| EP2183781B1 (en) * | 2007-06-28 | 2012-10-24 | 3M Innovative Properties Company | Method for forming gate structures |
| JP5217317B2 (ja) * | 2007-09-12 | 2013-06-19 | ソニー株式会社 | 有機トランジスタに用いる有機絶縁膜、および有機トランジスタとその製造方法 |
| CN101926017B (zh) * | 2007-12-17 | 2013-09-25 | 3M创新有限公司 | 基于蒽的可溶液加工的有机半导体 |
| JP5288826B2 (ja) * | 2008-02-22 | 2013-09-11 | 三洋電機株式会社 | 有機半導体素子及びその製造方法 |
| PT103999B (pt) * | 2008-03-20 | 2012-11-16 | Univ Nova De Lisboa | Processo de utilização e criação de papel à base de fibras celulósicas naturais, fibras sintéticas ou mistas como suporte físico e meio armazenador de cargas elétricas em transístores de efeito de campo com memória autossustentáveis usando óxidos sem |
| US8232350B2 (en) * | 2008-06-02 | 2012-07-31 | 3M Innovative Properties Company | Adhesive encapsulating composition and electronic devices made therewith |
| CN102076803B (zh) * | 2008-06-02 | 2014-11-12 | 3M创新有限公司 | 粘合剂封装组合物以及用其制备的电子器件 |
| CN102119164A (zh) * | 2008-06-19 | 2011-07-06 | 3M创新有限公司 | 可溶液处理的有机半导体 |
| KR101004734B1 (ko) * | 2008-07-29 | 2011-01-04 | 한국전자통신연구원 | 표면 에너지 제어를 이용한 유기 박막 트랜지스터 제조방법 |
| US7863694B2 (en) * | 2008-10-14 | 2011-01-04 | Xerox Corporation | Organic thin film transistors |
| US20100159635A1 (en) * | 2008-12-24 | 2010-06-24 | Weyerhaeuser Company | Method of patterning conductive layer and devices made thereby |
| JP5630036B2 (ja) * | 2009-05-07 | 2014-11-26 | セイコーエプソン株式会社 | 有機トランジスター、有機トランジスターの製造方法、電気光学装置および電子機器 |
| WO2012028278A1 (en) | 2010-09-02 | 2012-03-08 | Merck Patent Gmbh | Interlayer for electronic devices |
| US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
| US9082983B1 (en) * | 2012-05-16 | 2015-07-14 | The United States Of America As Represented By The Secretary Of The Navy | Solution processable thin-film transistors |
| US8779415B2 (en) | 2012-11-08 | 2014-07-15 | Eastman Kodak Company | Devices containing organic polymeric multi-metallic composites |
| US9721697B2 (en) | 2012-11-08 | 2017-08-01 | Eastman Kodak Company | Organic polymeric bi-metallic composites |
| AU2014215300B2 (en) * | 2013-02-08 | 2017-03-30 | Kuraray Co., Ltd. | Multilayer structure and method for producing same |
| CN104968495B (zh) * | 2013-02-08 | 2018-04-10 | 株式会社可乐丽 | 电子装置 |
| WO2014206916A1 (en) * | 2013-06-27 | 2014-12-31 | Basf Se | Metathesis polymers as dielectrics |
| CN106688050B (zh) | 2014-06-11 | 2018-09-18 | 伊斯曼柯达公司 | 具有带含硫代硫酸盐聚合物的电介质层的器件 |
| KR102450399B1 (ko) * | 2015-10-06 | 2022-09-30 | 삼성전자주식회사 | 박막 트랜지스터, 그 제조 방법, 그리고 상기 박막 트랜지스터를 포함하는 전자 장치 |
| US11857997B2 (en) * | 2020-06-18 | 2024-01-02 | International Business Machines Corporation | Metal surface protection |
Family Cites Families (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4561726A (en) * | 1983-07-29 | 1985-12-31 | At&T Bell Laboratories | Alignment of ferroelectric LCDs |
| US4539061A (en) * | 1983-09-07 | 1985-09-03 | Yeda Research And Development Co., Ltd. | Process for the production of built-up films by the stepwise adsorption of individual monolayers |
| US5079179A (en) | 1987-10-09 | 1992-01-07 | Hughes Aircraft Company | Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer |
| EP0390571B1 (en) * | 1989-03-31 | 1994-08-03 | Kabushiki Kaisha Toshiba | Organic thin film display element |
| JP2813428B2 (ja) * | 1989-08-17 | 1998-10-22 | 三菱電機株式会社 | 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置 |
| US5207862A (en) | 1989-09-08 | 1993-05-04 | Bell Communications Research, Inc. | Technique for epitaxial growth of oriented thin films of polydiacetylenes |
| FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
| JPH05148418A (ja) * | 1991-04-09 | 1993-06-15 | Mitsui Toatsu Chem Inc | 加水分解性が促進されたナイロン組成物およびナイロンの加水分解性を促進する方法 |
| JPH05105763A (ja) * | 1991-09-30 | 1993-04-27 | Kanegafuchi Chem Ind Co Ltd | ケイ素系ハイブリツド材料 |
| JPH06336531A (ja) * | 1993-05-27 | 1994-12-06 | Nippon Pariren Kk | アイオノマー樹脂上へのポリパラキシリレン被膜の造膜方法 |
| US5556706A (en) | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
| US6278127B1 (en) * | 1994-12-09 | 2001-08-21 | Agere Systems Guardian Corp. | Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor |
| US5543200A (en) | 1994-12-19 | 1996-08-06 | Gencorp Inc. | Abrasion-resistant article coated with a coating compositions based on fluorinated monohydric alcohol |
| JP3994441B2 (ja) * | 1995-01-09 | 2007-10-17 | 松下電器産業株式会社 | 電界効果トランジスタ |
| DE69633523T2 (de) | 1995-11-22 | 2006-02-16 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy Naval Research Laboratory | Leitende gemusterte polymeroberfläche, verfahren zu ihrer herstellung und diese enthaltende anordnungen |
| US5625199A (en) * | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
| US6326640B1 (en) | 1996-01-29 | 2001-12-04 | Motorola, Inc. | Organic thin film transistor with enhanced carrier mobility |
| EP0913446B1 (en) * | 1996-06-27 | 2008-08-20 | Nippon Mitsubishi Oil Corporation | Ultraviolet absorbing material and ultraviolet absorbing plate |
| US5965679A (en) | 1996-09-10 | 1999-10-12 | The Dow Chemical Company | Polyphenylene oligomers and polymers |
| JP3999837B2 (ja) | 1997-02-10 | 2007-10-31 | Ｔｄｋ株式会社 | 有機エレクトロルミネッセンス表示装置 |
| DE19815220C2 (de) | 1998-03-27 | 2003-12-18 | Univ Dresden Tech | Verfahren zur haftfesten und dichten chemischen oder galvanischen Metallisierung von Substraten sowie Haftvermittler zur Durchführung des Verfahrens |
| WO1999053371A1 (en) | 1998-04-10 | 1999-10-21 | E-Ink Corporation | Electronic displays using organic-based field effect transistors |
| TW410478B (en) * | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
| US6313185B1 (en) * | 1998-09-24 | 2001-11-06 | Honeywell International Inc. | Polymers having backbones with reactive groups employed in crosslinking as precursors to nanoporous thin film structures |
| US6114088A (en) * | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
| JP2000250045A (ja) * | 1999-02-26 | 2000-09-14 | Sharp Corp | 液晶表示装置およびその製造方法 |
| US6207472B1 (en) * | 1999-03-09 | 2001-03-27 | International Business Machines Corporation | Low temperature thin film transistor fabrication |
| US6265243B1 (en) | 1999-03-29 | 2001-07-24 | Lucent Technologies Inc. | Process for fabricating organic circuits |
| US6252245B1 (en) | 1999-03-29 | 2001-06-26 | Howard Edan Katz | Device comprising n-channel semiconductor material |
| JP5167569B2 (ja) * | 1999-06-21 | 2013-03-21 | ケンブリッジ・エンタープライズ・リミテッド | トランジスタの製造方法 |
| NO312867B1 (no) | 1999-06-30 | 2002-07-08 | Penn State Res Found | Anordning til elektrisk kontaktering eller isolering av organiske eller uorganiske halvledere, samt fremgangsmåte til densfremstilling |
| ATE450895T1 (de) | 1999-07-21 | 2009-12-15 | E Ink Corp | Bevorzugte methode, elektrische leiterbahnen für die kontrolle eines elektronischen displays herzustellen |
| US6335539B1 (en) * | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
| CN1245769C (zh) * | 1999-12-21 | 2006-03-15 | 造型逻辑有限公司 | 溶液加工 |
| JP2003518754A (ja) * | 1999-12-21 | 2003-06-10 | プラスティック ロジック リミテッド | 溶液処理された素子 |
| US6638680B2 (en) * | 2000-06-26 | 2003-10-28 | Agfa-Gevaert | Material and method for making an electroconductive pattern |
| US6867539B1 (en) | 2000-07-12 | 2005-03-15 | 3M Innovative Properties Company | Encapsulated organic electronic devices and method for making same |
| AU2002225620A1 (en) | 2000-11-17 | 2002-05-27 | United States Postal Service | Address matching |
| US7439096B2 (en) | 2001-02-21 | 2008-10-21 | Lucent Technologies Inc. | Semiconductor device encapsulation |
| US6870180B2 (en) * | 2001-06-08 | 2005-03-22 | Lucent Technologies Inc. | Organic polarizable gate transistor apparatus and method |
| US6734038B2 (en) * | 2001-09-04 | 2004-05-11 | The Trustees Of Princeton University | Method of manufacturing high-mobility organic thin films using organic vapor phase deposition |
| US6433359B1 (en) * | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
| US20030097010A1 (en) * | 2001-09-27 | 2003-05-22 | Vogel Dennis E. | Process for preparing pentacene derivatives |
| DE60212668T2 (de) | 2001-09-27 | 2007-06-21 | 3M Innovative Properties Co., St. Paul | Halbleiter auf basis von substituiertem pentacen |
| US6946676B2 (en) * | 2001-11-05 | 2005-09-20 | 3M Innovative Properties Company | Organic thin film transistor with polymeric interface |
| US6617609B2 (en) * | 2001-11-05 | 2003-09-09 | 3M Innovative Properties Company | Organic thin film transistor with siloxane polymer interface |
| US6768132B2 (en) | 2002-03-07 | 2004-07-27 | 3M Innovative Properties Company | Surface modified organic thin film transistors |
| US7109519B2 (en) * | 2003-07-15 | 2006-09-19 | 3M Innovative Properties Company | Bis(2-acenyl)acetylene semiconductors |
| US7045470B2 (en) * | 2003-11-04 | 2006-05-16 | Lucent Technologies Inc. | Methods of making thin dielectric layers on substrates |
| US7267892B2 (en) * | 2004-02-25 | 2007-09-11 | Eastman Kodak Company | Electroluminescent devices having pendant naphthylanthracene-based polymers |
| US7217600B2 (en) * | 2004-10-29 | 2007-05-15 | Intel Corporation | Cyclic olefin polymers and catalyst for semiconductor applications |
-
2001
- 2001-11-05 US US10/012,654 patent/US6946676B2/en not_active Expired - Fee Related
-
2002
- 2002-10-23 AU AU2002337959A patent/AU2002337959A1/en not_active Abandoned
- 2002-10-23 EP EP02773864A patent/EP1442484A2/en not_active Withdrawn
- 2002-10-23 WO PCT/US2002/033872 patent/WO2003041185A2/en not_active Ceased
- 2002-10-23 JP JP2003543117A patent/JP2005509298A/ja active Pending
- 2002-10-23 KR KR1020047006756A patent/KR20050039731A/ko not_active Ceased
-
2005
- 2005-09-15 US US11/227,547 patent/US7352038B2/en not_active Expired - Fee Related
- 2005-09-15 US US11/227,501 patent/US7352000B2/en not_active Expired - Fee Related
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