JP2005508086A5 - - Google Patents

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Publication number
JP2005508086A5
JP2005508086A5 JP2003541034A JP2003541034A JP2005508086A5 JP 2005508086 A5 JP2005508086 A5 JP 2005508086A5 JP 2003541034 A JP2003541034 A JP 2003541034A JP 2003541034 A JP2003541034 A JP 2003541034A JP 2005508086 A5 JP2005508086 A5 JP 2005508086A5
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JP
Japan
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region
bipolar device
type
diode
substrate
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JP2003541034A
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English (en)
Japanese (ja)
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JP4597514B2 (ja
JP2005508086A (ja
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Priority claimed from US10/046,346 external-priority patent/US6849874B2/en
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Publication of JP2005508086A publication Critical patent/JP2005508086A/ja
Publication of JP2005508086A5 publication Critical patent/JP2005508086A5/ja
Application granted granted Critical
Publication of JP4597514B2 publication Critical patent/JP4597514B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2003541034A 2001-10-26 2002-09-24 劣化を最少に抑えたＳｉＣバイポーラ半導体デバイス Expired - Lifetime JP4597514B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/046,346 US6849874B2 (en) 2001-10-26 2001-10-26 Minimizing degradation of SiC bipolar semiconductor devices
PCT/US2002/030230 WO2003038876A1 (en) 2001-10-26 2002-09-24 Sic bipolar semiconductor devices with few crystal defects

Publications (3)

Publication Number Publication Date
JP2005508086A JP2005508086A (ja) 2005-03-24
JP2005508086A5 true JP2005508086A5 (enExample) 2006-01-05
JP4597514B2 JP4597514B2 (ja) 2010-12-15

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Family Applications (1)

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JP2003541034A Expired - Lifetime JP4597514B2 (ja) 2001-10-26 2002-09-24 劣化を最少に抑えたＳｉＣバイポーラ半導体デバイス

Country Status (8)

Country Link
US (4) US6849874B2 (enExample)
EP (1) EP1438739B1 (enExample)
JP (1) JP4597514B2 (enExample)
KR (1) KR101036253B1 (enExample)
CN (1) CN100369196C (enExample)
CA (1) CA2457399A1 (enExample)
TW (1) TWI229421B (enExample)
WO (1) WO2003038876A1 (enExample)

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