FR2963983B1 - Composant de protection bidirectionnel dissymetrique - Google Patents
Composant de protection bidirectionnel dissymetriqueInfo
- Publication number
- FR2963983B1 FR2963983B1 FR1056648A FR1056648A FR2963983B1 FR 2963983 B1 FR2963983 B1 FR 2963983B1 FR 1056648 A FR1056648 A FR 1056648A FR 1056648 A FR1056648 A FR 1056648A FR 2963983 B1 FR2963983 B1 FR 2963983B1
- Authority
- FR
- France
- Prior art keywords
- dissymmetric
- bidirectional
- protection component
- protection
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000002457 bidirectional effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66098—Breakdown diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/983—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1056648A FR2963983B1 (fr) | 2010-08-18 | 2010-08-18 | Composant de protection bidirectionnel dissymetrique |
US13/210,782 US8975661B2 (en) | 2010-08-18 | 2011-08-16 | Asymmetrical bidirectional protection component |
CN201110238118.4A CN102376774B (zh) | 2010-08-18 | 2011-08-18 | 非对称双向保护组件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1056648A FR2963983B1 (fr) | 2010-08-18 | 2010-08-18 | Composant de protection bidirectionnel dissymetrique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2963983A1 FR2963983A1 (fr) | 2012-02-24 |
FR2963983B1 true FR2963983B1 (fr) | 2012-09-07 |
Family
ID=43064332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1056648A Expired - Fee Related FR2963983B1 (fr) | 2010-08-18 | 2010-08-18 | Composant de protection bidirectionnel dissymetrique |
Country Status (2)
Country | Link |
---|---|
US (1) | US8975661B2 (fr) |
FR (1) | FR2963983B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2960097A1 (fr) * | 2010-05-11 | 2011-11-18 | St Microelectronics Tours Sas | Composant de protection bidirectionnel |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4824797A (en) | 1985-10-31 | 1989-04-25 | International Business Machines Corporation | Self-aligned channel stop |
US5384477A (en) * | 1993-03-09 | 1995-01-24 | National Semiconductor Corporation | CMOS latchup suppression by localized minority carrier lifetime reduction |
US5880511A (en) * | 1995-06-30 | 1999-03-09 | Semtech Corporation | Low-voltage punch-through transient suppressor employing a dual-base structure |
US6060752A (en) * | 1997-12-31 | 2000-05-09 | Siliconix, Incorporated | Electrostatic discharge protection circuit |
US6849874B2 (en) * | 2001-10-26 | 2005-02-01 | Cree, Inc. | Minimizing degradation of SiC bipolar semiconductor devices |
US6781161B1 (en) * | 2003-04-09 | 2004-08-24 | Teccor Electronics, Lp | Non-gated thyristor device |
US20060216913A1 (en) | 2005-03-25 | 2006-09-28 | Pu-Ju Kung | Asymmetric bidirectional transient voltage suppressor and method of forming same |
US7666751B2 (en) * | 2007-09-21 | 2010-02-23 | Semiconductor Components Industries, Llc | Method of forming a high capacitance diode and structure therefor |
US8445917B2 (en) * | 2009-03-20 | 2013-05-21 | Cree, Inc. | Bidirectional silicon carbide transient voltage suppression devices |
-
2010
- 2010-08-18 FR FR1056648A patent/FR2963983B1/fr not_active Expired - Fee Related
-
2011
- 2011-08-16 US US13/210,782 patent/US8975661B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20120061803A1 (en) | 2012-03-15 |
CN102376774A (zh) | 2012-03-14 |
FR2963983A1 (fr) | 2012-02-24 |
US8975661B2 (en) | 2015-03-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20150430 |