KR101036253B1 - 결정 결함 성장이 억제되는 바이폴러 반도체 소자 - Google Patents

결정 결함 성장이 억제되는 바이폴러 반도체 소자 Download PDF

Info

Publication number
KR101036253B1
KR101036253B1 KR1020047003506A KR20047003506A KR101036253B1 KR 101036253 B1 KR101036253 B1 KR 101036253B1 KR 1020047003506 A KR1020047003506 A KR 1020047003506A KR 20047003506 A KR20047003506 A KR 20047003506A KR 101036253 B1 KR101036253 B1 KR 101036253B1
Authority
KR
South Korea
Prior art keywords
region
type
layer
silicon carbide
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020047003506A
Other languages
English (en)
Korean (ko)
Other versions
KR20050030239A (ko
Inventor
수마커리스조셉제이.
신그란비르
페이즐리마이클제임스
무엘러스테판조지
홉굳허드슨엠.
카터캘빈에이치.주니어
버크알버트아우구스투스주니어
Original Assignee
크리 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 크리 인코포레이티드 filed Critical 크리 인코포레이티드
Publication of KR20050030239A publication Critical patent/KR20050030239A/ko
Application granted granted Critical
Publication of KR101036253B1 publication Critical patent/KR101036253B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
KR1020047003506A 2001-10-26 2002-09-24 결정 결함 성장이 억제되는 바이폴러 반도체 소자 Expired - Lifetime KR101036253B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/046,346 US6849874B2 (en) 2001-10-26 2001-10-26 Minimizing degradation of SiC bipolar semiconductor devices
US10/046,346 2001-10-26

Publications (2)

Publication Number Publication Date
KR20050030239A KR20050030239A (ko) 2005-03-29
KR101036253B1 true KR101036253B1 (ko) 2011-05-20

Family

ID=21942959

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047003506A Expired - Lifetime KR101036253B1 (ko) 2001-10-26 2002-09-24 결정 결함 성장이 억제되는 바이폴러 반도체 소자

Country Status (8)

Country Link
US (4) US6849874B2 (enExample)
EP (1) EP1438739B1 (enExample)
JP (1) JP4597514B2 (enExample)
KR (1) KR101036253B1 (enExample)
CN (1) CN100369196C (enExample)
CA (1) CA2457399A1 (enExample)
TW (1) TWI229421B (enExample)
WO (1) WO2003038876A1 (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849874B2 (en) * 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
US6900477B1 (en) * 2001-12-07 2005-05-31 The United States Of America As Represented By The Secretary Of The Army Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture
US6982440B2 (en) * 2002-02-19 2006-01-03 Powersicel, Inc. Silicon carbide semiconductor devices with a regrown contact layer
EP2398049A3 (en) * 2003-08-22 2012-12-19 The Kansai Electric Power Co., Inc. Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
US7018554B2 (en) * 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
JP2005167035A (ja) 2003-12-03 2005-06-23 Kansai Electric Power Co Inc:The 炭化珪素半導体素子およびその製造方法
US7173285B2 (en) 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US20070290211A1 (en) * 2004-03-26 2007-12-20 The Kansai Electric Power Co., Inc. Bipolar Semiconductor Device and Process for Producing the Same
EP1619276B1 (en) * 2004-07-19 2017-01-11 Norstel AB Homoepitaxial growth of SiC on low off-axis SiC wafers
US7192482B2 (en) * 2004-08-10 2007-03-20 Cree, Inc. Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US7391058B2 (en) * 2005-06-27 2008-06-24 General Electric Company Semiconductor devices and methods of making same
EP1933386B1 (en) * 2005-09-14 2012-11-07 Central Research Institute of Electric Power Industry Process for producing silicon carbide semiconductor device
US7304334B2 (en) * 2005-09-16 2007-12-04 Cree, Inc. Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
DE102005046707B3 (de) * 2005-09-29 2007-05-03 Siced Electronics Development Gmbh & Co. Kg SiC-PN-Leistungsdiode
JP5386177B2 (ja) * 2006-01-10 2014-01-15 クリー インコーポレイテッド 炭化珪素ディンプル基板
KR100793607B1 (ko) * 2006-06-27 2008-01-10 매그나칩 반도체 유한회사 에피텍셜 실리콘 웨이퍼 및 그 제조방법
US8455269B2 (en) * 2006-08-04 2013-06-04 Central Research Institute Of Electric Power Industry Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices
CN101622620B (zh) 2007-01-23 2014-06-18 卡内基梅隆大学 控制访问计算机系统和注释媒体文件的方法和装置
SE532625C2 (sv) * 2007-04-11 2010-03-09 Transic Ab Halvledarkomponent i kiselkarbid
US7915143B2 (en) * 2008-04-30 2011-03-29 The United States Of America As Represented By The Secretary Of The Navy Method of mediating forward voltage drift in a SiC device
US8136167B1 (en) 2008-10-20 2012-03-13 Google Inc. Systems and methods for providing image feedback
US8542251B1 (en) 2008-10-20 2013-09-24 Google Inc. Access using image-based manipulation
US8621396B1 (en) 2008-10-20 2013-12-31 Google Inc. Access using image-based manipulation
JP5628681B2 (ja) 2008-10-21 2014-11-19 ルネサスエレクトロニクス株式会社 バイポーラトランジスタ
CN102246283B (zh) * 2008-10-21 2014-08-06 瑞萨电子株式会社 双极晶体管
US8196198B1 (en) 2008-12-29 2012-06-05 Google Inc. Access using images
US8392986B1 (en) 2009-06-17 2013-03-05 Google Inc. Evaluating text-based access strings
US8377806B2 (en) * 2010-04-28 2013-02-19 Cree, Inc. Method for controlled growth of silicon carbide and structures produced by same
FR2960097A1 (fr) * 2010-05-11 2011-11-18 St Microelectronics Tours Sas Composant de protection bidirectionnel
FR2963983B1 (fr) * 2010-08-18 2012-09-07 St Microelectronics Tours Sas Composant de protection bidirectionnel dissymetrique
JP2013546161A (ja) 2010-09-21 2013-12-26 クワンタム エレクトロ オプト システムズ エスディーエヌ． ビーエイチディー． 発光およびレーザ半導体方法およびデバイス
JP5639828B2 (ja) * 2010-09-27 2014-12-10 株式会社日立製作所 半導体記憶装置およびその製造方法
SE1051137A1 (sv) 2010-10-29 2012-04-30 Fairchild Semiconductor Förfarande för tillverkning av en kiselkarbid bipolär transistor och kiselkarbid bipolär transistor därav
JP2012164790A (ja) 2011-02-07 2012-08-30 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
US9171977B2 (en) 2011-06-17 2015-10-27 Cree, Inc. Optically assist-triggered wide bandgap thyristors having positive temperature coefficients
WO2013107508A1 (en) * 2012-01-18 2013-07-25 Fairchild Semiconductor Corporation Bipolar junction transistor with spacer layer and method of manufacturing the same
CN102610638B (zh) * 2012-03-22 2014-04-16 西安电子科技大学 用于功率集成电路的SiC-BJT器件及其制作方法
TW201417150A (zh) * 2012-10-31 2014-05-01 Lg Innotek Co Ltd 磊晶晶圓
CN104919571B (zh) * 2012-11-30 2018-01-23 Lg伊诺特有限公司 外延晶元，以及使用其的开关元件和发光元件
KR102053077B1 (ko) * 2012-11-30 2020-01-08 엘지이노텍 주식회사 에피택셜 웨이퍼 및 그 제조 방법
KR102098209B1 (ko) * 2013-02-05 2020-04-08 엘지이노텍 주식회사 에피택셜 웨이퍼 및 그 제조 방법
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
CN107109693B (zh) * 2014-11-12 2019-08-09 住友电气工业株式会社 碳化硅外延基板的制造方法和碳化硅外延基板
US10229836B2 (en) 2015-05-18 2019-03-12 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide epitaxial substrate, silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device
CN108026664B (zh) * 2015-10-27 2020-11-13 住友电气工业株式会社 碳化硅基板
JP6706786B2 (ja) * 2015-10-30 2020-06-10 一般財団法人電力中央研究所 エピタキシャルウェハの製造方法、エピタキシャルウェハ、半導体装置の製造方法及び半導体装置
JP6762484B2 (ja) * 2017-01-10 2020-09-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
CN112447498A (zh) * 2019-08-29 2021-03-05 中国科学院苏州纳米技术与纳米仿生研究所 降低双极型器件正向导通SFs拓展的SiC外延层生长方法、结构及生长方法供气管路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094096A (ja) * 1999-09-21 2001-04-06 Denso Corp 炭化珪素半導体装置及びその製造方法
JP2001158696A (ja) * 1999-11-29 2001-06-12 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法
JP2001247397A (ja) * 2000-03-01 2001-09-11 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US93576A (en) * 1869-08-10 Improved machine for driving posts
US3988771A (en) 1974-05-28 1976-10-26 General Electric Company Spatial control of lifetime in semiconductor device
US3988772A (en) 1974-05-28 1976-10-26 General Electric Company Current isolation means for integrated power devices
US3988762A (en) 1974-05-28 1976-10-26 General Electric Company Minority carrier isolation barriers for semiconductor devices
US4912063A (en) 1987-10-26 1990-03-27 North Carolina State University Growth of beta-sic thin films and semiconductor devices fabricated thereon
US4912064A (en) 1987-10-26 1990-03-27 North Carolina State University Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
US5230768A (en) * 1990-03-26 1993-07-27 Sharp Kabushiki Kaisha Method for the production of SiC single crystals by using a specific substrate crystal orientation
US5093576A (en) * 1991-03-15 1992-03-03 Cree Research High sensitivity ultraviolet radiation detector
JPH05129656A (ja) 1991-10-31 1993-05-25 Sharp Corp ｐｎ接合型発光ダイオード
US5313078A (en) * 1991-12-04 1994-05-17 Sharp Kabushiki Kaisha Multi-layer silicon carbide light emitting diode having a PN junction
JPH06338629A (ja) 1993-03-29 1994-12-06 Sanyo Electric Co Ltd 炭化ケイ素発光ダイオード素子
US5879962A (en) * 1995-12-13 1999-03-09 Minnesota Mining And Manufacturing Company III-V/II-VI Semiconductor interface fabrication method
SE9603738D0 (sv) 1996-10-14 1996-10-14 Abb Research Ltd A method for producing a bipolar semiconductor device and a bipolar semiconductor device
SE512259C2 (sv) * 1998-03-23 2000-02-21 Abb Research Ltd Halvledaranordning bestående av dopad kiselkarbid vilken innefattar en pn-övergång som uppvisar åtminstone en ihålig defekt och förfarande för dess framställning
US6346821B1 (en) * 1998-03-27 2002-02-12 Infineon Technologies Ag Method for nondestructive measurement of minority carrier diffusion length and minority carrier lifetime in semiconductor devices
US6054706A (en) 1998-06-15 2000-04-25 Northwestern University Long wavelength infrared photodetectors
JP4185215B2 (ja) * 1999-05-07 2008-11-26 弘之 松波 ＳｉＣウエハ、ＳｉＣ半導体デバイス、および、ＳｉＣウエハの製造方法
US6512384B1 (en) * 2000-06-29 2003-01-28 Semiconductor Diagnostics, Inc. Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages
US6849874B2 (en) * 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094096A (ja) * 1999-09-21 2001-04-06 Denso Corp 炭化珪素半導体装置及びその製造方法
JP2001158696A (ja) * 1999-11-29 2001-06-12 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法
JP2001247397A (ja) * 2000-03-01 2001-09-11 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
B.J.Baliga 저(제목: Power Semiconductor Device, PWS 출판사)(1996) 1부.*

Also Published As

Publication number Publication date
CA2457399A1 (en) 2003-05-08
CN1559080A (zh) 2004-12-29
US6849874B2 (en) 2005-02-01
EP1438739B1 (en) 2019-06-26
JP4597514B2 (ja) 2010-12-15
WO2003038876A1 (en) 2003-05-08
US7427326B2 (en) 2008-09-23
US20030080842A1 (en) 2003-05-01
CN100369196C (zh) 2008-02-13
JP2005508086A (ja) 2005-03-24
US20050118746A1 (en) 2005-06-02
US20050116234A1 (en) 2005-06-02
US20070117336A1 (en) 2007-05-24
TWI229421B (en) 2005-03-11
US7880171B2 (en) 2011-02-01
KR20050030239A (ko) 2005-03-29
EP1438739A1 (en) 2004-07-21

Similar Documents

Publication Publication Date Title
KR101036253B1 (ko) 결정 결함 성장이 억제되는 바이폴러 반도체 소자
EP0445998B1 (en) Diamond semiconductor devices
US8497552B2 (en) Semiconductor devices with current shifting regions and related methods
US8203150B2 (en) Silicon carbide semiconductor substrate and method of manufacturing the same
US8698286B2 (en) High voltage switching devices and process for forming same
JP6904774B2 (ja) 炭化珪素エピタキシャルウェハ、炭化珪素絶縁ゲート型バイポーラトランジスタ及びこれらの製造方法
JP2008205514A (ja) Ｉｉｉ−ｖ族窒化物半導体素子
KR20130098954A (ko) 복합 구조체 및 복합 구조체 제조 방법
JP2009088223A (ja) 炭化珪素半導体基板およびそれを用いた炭化珪素半導体装置
JP5150802B2 (ja) 窒化物基半導体デバイスのための低ドープ層
KR100830482B1 (ko) 화합물 반도체 및 그것을 이용한 화합물 반도체 디바이스
US8338833B2 (en) Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same
US4925810A (en) Compound semiconductor device and a method of manufacturing the same
JP2004200234A (ja) 半導体及び半導体基板、その製造方法、並びに半導体素子
EP2599124A1 (en) Electronic device structure with a semiconductor ledge layer for surface passivation
KR20250148344A (ko) 전기 절연성이 강화된 GaN HEMT용 에피택시 웨이퍼 및 그 제조 방법
CN116897434A (zh) 碳化硅半导体装置及碳化硅半导体基板
CN117305984A (zh) 一种高质量异质外延方法及其制备得到的外延层结构
CN118825051A (zh) 复合衬底、半导体结构及复合衬底的制作方法
KR20060136337A (ko) 복합 구조체 및 복합 구조체 제조 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140422

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150416

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160419

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170420

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20180417

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20190417

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20220925

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000