JP2005249693A5 - - Google Patents

Download PDF

Info

Publication number
JP2005249693A5
JP2005249693A5 JP2004063228A JP2004063228A JP2005249693A5 JP 2005249693 A5 JP2005249693 A5 JP 2005249693A5 JP 2004063228 A JP2004063228 A JP 2004063228A JP 2004063228 A JP2004063228 A JP 2004063228A JP 2005249693 A5 JP2005249693 A5 JP 2005249693A5
Authority
JP
Japan
Prior art keywords
inspected
contact portion
contact
probe
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004063228A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005249693A (ja
JP4723195B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2004063228A external-priority patent/JP4723195B2/ja
Priority to JP2004063228A priority Critical patent/JP4723195B2/ja
Priority to PCT/JP2005/003609 priority patent/WO2005085877A1/ja
Priority to CNB2005800071701A priority patent/CN100442058C/zh
Priority to EP05719913A priority patent/EP1724594A1/en
Priority to US10/591,645 priority patent/US7649369B2/en
Priority to KR1020067017410A priority patent/KR100835245B1/ko
Priority to TW094106626A priority patent/TW200540425A/zh
Publication of JP2005249693A publication Critical patent/JP2005249693A/ja
Publication of JP2005249693A5 publication Critical patent/JP2005249693A5/ja
Publication of JP4723195B2 publication Critical patent/JP4723195B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004063228A 2004-03-05 2004-03-05 プローブの製造方法 Expired - Fee Related JP4723195B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004063228A JP4723195B2 (ja) 2004-03-05 2004-03-05 プローブの製造方法
US10/591,645 US7649369B2 (en) 2004-03-05 2005-03-03 Probe and method of manufacturing probe
CNB2005800071701A CN100442058C (zh) 2004-03-05 2005-03-03 探针以及探针的制造方法
EP05719913A EP1724594A1 (en) 2004-03-05 2005-03-03 Probe and probe manufacturing method
PCT/JP2005/003609 WO2005085877A1 (ja) 2004-03-05 2005-03-03 プローブ及びプローブの製造方法
KR1020067017410A KR100835245B1 (ko) 2004-03-05 2005-03-03 프로브 및 프로브의 제조 방법
TW094106626A TW200540425A (en) 2004-03-05 2005-03-04 Test probe and manufacturing method of same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004063228A JP4723195B2 (ja) 2004-03-05 2004-03-05 プローブの製造方法

Publications (3)

Publication Number Publication Date
JP2005249693A JP2005249693A (ja) 2005-09-15
JP2005249693A5 true JP2005249693A5 (enExample) 2006-12-28
JP4723195B2 JP4723195B2 (ja) 2011-07-13

Family

ID=34918148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004063228A Expired - Fee Related JP4723195B2 (ja) 2004-03-05 2004-03-05 プローブの製造方法

Country Status (7)

Country Link
US (1) US7649369B2 (enExample)
EP (1) EP1724594A1 (enExample)
JP (1) JP4723195B2 (enExample)
KR (1) KR100835245B1 (enExample)
CN (1) CN100442058C (enExample)
TW (1) TW200540425A (enExample)
WO (1) WO2005085877A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4676224B2 (ja) * 2005-03-23 2011-04-27 東京特殊電線株式会社 プローブ針及びその製造方法
JP4855757B2 (ja) * 2005-10-19 2012-01-18 富士通株式会社 カーボンナノチューブパッド及び電子デバイス
JP2008039639A (ja) * 2006-08-08 2008-02-21 Hioki Ee Corp 接触式計測用プローブ
US7731503B2 (en) * 2006-08-21 2010-06-08 Formfactor, Inc. Carbon nanotube contact structures
TW200815763A (en) * 2006-09-26 2008-04-01 Nihon Micronics Kabushiki Kaisha Electrical test probe and electrical test probe assembly
KR100804738B1 (ko) * 2007-01-16 2008-02-19 삼성전자주식회사 이온화 충돌 반도체 소자를 이용한 반도체 탐침 및 이를구비한 정보 저장 장치와 그의 제조 방법
JP2008235555A (ja) * 2007-03-20 2008-10-02 Shinko Electric Ind Co Ltd 電子装置の製造方法及び基板及び半導体装置
KR100799166B1 (ko) * 2007-07-02 2008-01-29 이재하 프로브 배열체의 제조방법
WO2009084770A1 (en) 2007-12-28 2009-07-09 Phicom Corporation Contact tip structure of a connecting element
CN101526555B (zh) * 2008-03-04 2011-12-07 跃沄科技有限公司 一种制探针的方法
JPWO2010007816A1 (ja) * 2008-07-18 2012-01-05 東京エレクトロン株式会社 プローブ
JP5325085B2 (ja) * 2009-12-24 2013-10-23 日本碍子株式会社 接続装置
KR101047550B1 (ko) 2010-07-02 2011-07-07 주식회사 아이에스시테크놀러지 탐침부를 가지는 도전성 접속부재 및 그 도전성 접속부재를 제조하는 방법
WO2012002763A2 (en) 2010-07-02 2012-01-05 Jae Hak Lee Test probe for test and fabrication method thereof
CN102610941A (zh) * 2011-01-19 2012-07-25 富士康(昆山)电脑接插件有限公司 测试连接器
JP5688064B2 (ja) 2012-11-02 2015-03-25 本田技研工業株式会社 半導体素子検査装置及び検査方法
CN103091617B (zh) * 2013-01-29 2017-08-15 无锡华润上华科技有限公司 一种半导体测试方法
JP5936579B2 (ja) * 2013-05-08 2016-06-22 本田技研工業株式会社 電流印加装置
EP2894483B1 (en) * 2014-01-09 2018-06-27 Multitest elektronische Systeme GmbH Contact tip and contact element and method of producing the same
US10732201B2 (en) * 2014-04-13 2020-08-04 Infineon Technologies Ag Test probe and method of manufacturing a test probe
TWI564569B (zh) * 2015-09-21 2017-01-01 旺矽科技股份有限公司 探針結構及其製造方法
CN106443188B (zh) * 2016-11-09 2020-08-25 武汉新芯集成电路制造有限公司 一种电阻量测探头
KR101962702B1 (ko) * 2017-06-28 2019-03-27 주식회사 아이에스시 포고핀용 탐침부재, 이의 제조 방법 및 이를 포함하는 포고핀
KR101976702B1 (ko) * 2017-08-31 2019-05-09 주식회사 아이에스시 탄소나노튜브가 포함된 검사용 소켓
CN108279368A (zh) * 2018-01-23 2018-07-13 德淮半导体有限公司 测试机台及测试方法
JP7497629B2 (ja) * 2020-07-03 2024-06-11 富士電機株式会社 半導体チップの試験装置および試験方法
CN116263473A (zh) * 2021-12-13 2023-06-16 合肥本源量子计算科技有限责任公司 探针装置、超导量子比特结电阻测量装置、系统及方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68917231T2 (de) * 1988-05-18 1994-12-15 Canon Kk Sondenkarte, Verfahren zur Messung eines zu messenden Teiles mit derselben und elektrischer Schaltungsteil.
US5419807A (en) * 1993-09-03 1995-05-30 Micron Technology, Inc. Method of providing electrical interconnect between two layers within a silicon substrate, semiconductor apparatus, and method of forming apparatus for testing semiconductor circuitry for operability
US5483741A (en) * 1993-09-03 1996-01-16 Micron Technology, Inc. Method for fabricating a self limiting silicon based interconnect for testing bare semiconductor dice
JP3460094B2 (ja) * 1994-02-21 2003-10-27 株式会社呉英製作所 Icパッケージ検査用ソケットの電極部形成方法
JPH0968546A (ja) * 1995-08-31 1997-03-11 Nitto Denko Corp テストヘッド構造およびその製造方法
JPH09196969A (ja) * 1996-01-23 1997-07-31 Nitto Denko Corp プローブ構造
JP2796070B2 (ja) 1995-04-28 1998-09-10 松下電器産業株式会社 プローブカードの製造方法
US5763879A (en) * 1996-09-16 1998-06-09 Pacific Western Systems Diamond probe tip
JP2944537B2 (ja) * 1996-10-14 1999-09-06 山一電機株式会社 電子部品接触用フレキシブル配線板
JPH10132854A (ja) 1996-10-29 1998-05-22 Matsushita Electron Corp コンタクタ及びコンタクタの形成方法
JPH10221370A (ja) * 1997-01-31 1998-08-21 Mitsubishi Materials Corp コンタクトプローブおよびその製造方法、並びにコンタクトプローブを備えたプローブ装置
US5894161A (en) * 1997-02-24 1999-04-13 Micron Technology, Inc. Interconnect with pressure sensing mechanism for testing semiconductor wafers
JPH1123615A (ja) * 1997-05-09 1999-01-29 Hitachi Ltd 接続装置および検査システム
DE69837690T2 (de) * 1997-07-24 2007-12-27 Mitsubishi Denki K.K. Gerät zur Entfernung von an einer Prüfspitzenendfläche haftenden Fremdstoffen
JPH1151970A (ja) 1997-07-31 1999-02-26 Nec Corp プローブカード
JPH1197494A (ja) * 1997-09-18 1999-04-09 Hitachi Ltd 半導体装置およびその製造方法
WO1999015908A1 (fr) * 1997-09-19 1999-04-01 Hitachi, Ltd. Procede de fabrication de dispositif de circuit integre a semi-conducteurs
US6285201B1 (en) * 1997-10-06 2001-09-04 Micron Technology, Inc. Method and apparatus for capacitively testing a semiconductor die
US6246245B1 (en) * 1998-02-23 2001-06-12 Micron Technology, Inc. Probe card, test method and test system for semiconductor wafers
JP4084498B2 (ja) * 1998-10-27 2008-04-30 松下電器産業株式会社 検査用基板
JP4361161B2 (ja) 1999-04-06 2009-11-11 日東電工株式会社 異方導電性コネクター
US6352454B1 (en) * 1999-10-20 2002-03-05 Xerox Corporation Wear-resistant spring contacts
JP2002131334A (ja) * 2000-10-24 2002-05-09 Nec Yamaguchi Ltd プローブ針、プローブカード、及びプローブカードの作製方法
US7015707B2 (en) * 2002-03-20 2006-03-21 Gabe Cherian Micro probe
US7112974B1 (en) * 2002-05-23 2006-09-26 Cypress Semiconductor Corporation Proble for testing integrated circuits
JP3771907B2 (ja) 2002-05-27 2006-05-10 山一電機株式会社 電極の回復処理方法
KR100373762B1 (en) * 2002-09-25 2003-02-26 Uk Ki Lee Method for manufacturing cavity-type micro-probe using mems technology and micro-probe according to the same

Similar Documents

Publication Publication Date Title
JP2005249693A5 (enExample)
WO2008011687A3 (en) Conductive contacts on ge
CN100442058C (zh) 探针以及探针的制造方法
JP2009164481A5 (enExample)
TW201640122A (zh) 測試頭之接觸探針
JP2011507718A5 (enExample)
WO2007002297A8 (en) Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures
EP2408035A3 (en) Two terminal resistive switching device structure and method of fabricating
JP2016213468A5 (enExample)
WO2008082815A3 (en) Resilient contact element and methods of fabrication
WO2007137097A3 (en) Single layer carbon nanotube-based structures and methods for removing heat from solid-state devices
TW200705616A (en) Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same
WO2009142982A3 (en) Metal gate structure and method of manufacturing same
CN107389447B (zh) 一种金属增材制造的拉伸试样
WO2007081522A3 (en) A probe array structure and a method of making a probe array structure
TW200602641A (en) Probe card and method for constructing same
KR20160148097A (ko) Pcr 디바이스 및 그 제조 방법
JP2005277323A5 (enExample)
JP2017058197A5 (enExample)
JP2009212163A5 (enExample)
JP2006294976A5 (enExample)
JP2012093194A5 (enExample)
WO2007127107A3 (en) Microfabricated devices and method for fabricating microfabricated devices
WO2008057814A3 (en) Device with patterned semiconductor electrode structure and manufacturing method thereof
EP1903611A3 (en) Semiconductor device and manufacturing method thereof