JP2004536910A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2004536910A5 JP2004536910A5 JP2003512357A JP2003512357A JP2004536910A5 JP 2004536910 A5 JP2004536910 A5 JP 2004536910A5 JP 2003512357 A JP2003512357 A JP 2003512357A JP 2003512357 A JP2003512357 A JP 2003512357A JP 2004536910 A5 JP2004536910 A5 JP 2004536910A5
- Authority
- JP
- Japan
- Prior art keywords
- atoms
- group
- hydroxyethyl
- integer
- cycloalkylene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims description 52
- 238000004140 cleaning Methods 0.000 claims description 51
- 125000003118 aryl group Chemical group 0.000 claims description 34
- 238000005260 corrosion Methods 0.000 claims description 33
- 230000007797 corrosion Effects 0.000 claims description 33
- 125000000217 alkyl group Chemical group 0.000 claims description 31
- 230000002401 inhibitory effect Effects 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 28
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 18
- 239000002904 solvent Substances 0.000 claims description 17
- 239000012453 solvate Substances 0.000 claims description 15
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 10
- 230000000269 nucleophilic effect Effects 0.000 claims description 7
- -1 silicate compound Chemical class 0.000 claims description 7
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 150000007522 mineralic acids Chemical class 0.000 claims description 5
- 150000007524 organic acids Chemical class 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- 239000002738 chelating agent Substances 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 2
- 125000005842 heteroatom Chemical group 0.000 claims 80
- 229910052757 nitrogen Inorganic materials 0.000 claims 80
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 80
- 125000004437 phosphorous atom Chemical group 0.000 claims 80
- 229910052717 sulfur Inorganic materials 0.000 claims 80
- 229910052760 oxygen Inorganic materials 0.000 claims 70
- 125000004434 sulfur atom Chemical group 0.000 claims 70
- 125000004430 oxygen atom Chemical group O* 0.000 claims 60
- 125000000732 arylene group Chemical group 0.000 claims 40
- 125000002993 cycloalkylene group Chemical group 0.000 claims 40
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 36
- 238000000034 method Methods 0.000 claims 31
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 30
- 125000000753 cycloalkyl group Chemical group 0.000 claims 30
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims 30
- 229910052739 hydrogen Inorganic materials 0.000 claims 30
- 239000001257 hydrogen Substances 0.000 claims 30
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 30
- 125000002947 alkylene group Chemical group 0.000 claims 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 18
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims 16
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims 12
- TWYIPMITVXPNEM-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidine-2,5-dione Chemical compound OCCN1C(=O)CCC1=O TWYIPMITVXPNEM-UHFFFAOYSA-N 0.000 claims 10
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims 10
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims 10
- KKFDCBRMNNSAAW-UHFFFAOYSA-N 2-(morpholin-4-yl)ethanol Chemical compound OCCN1CCOCC1 KKFDCBRMNNSAAW-UHFFFAOYSA-N 0.000 claims 10
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims 10
- 229940058020 2-amino-2-methyl-1-propanol Drugs 0.000 claims 10
- LTACQVCHVAUOKN-UHFFFAOYSA-N 3-(diethylamino)propane-1,2-diol Chemical compound CCN(CC)CC(O)CO LTACQVCHVAUOKN-UHFFFAOYSA-N 0.000 claims 10
- PVCJKHHOXFKFRP-UHFFFAOYSA-N N-acetylethanolamine Chemical compound CC(=O)NCCO PVCJKHHOXFKFRP-UHFFFAOYSA-N 0.000 claims 10
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims 10
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims 10
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims 10
- 239000006184 cosolvent Substances 0.000 claims 10
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims 10
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims 10
- RJLKIAGOYBARJG-UHFFFAOYSA-N 1,3-dimethylpiperidin-2-one Chemical compound CC1CCCN(C)C1=O RJLKIAGOYBARJG-UHFFFAOYSA-N 0.000 claims 8
- 125000004432 carbon atom Chemical group C* 0.000 claims 6
- 150000003839 salts Chemical class 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000002253 acid Substances 0.000 claims 2
- 230000000536 complexating effect Effects 0.000 claims 2
- 238000004377 microelectronic Methods 0.000 claims 2
- FCKYPQBAHLOOJQ-UWVGGRQHSA-N 2-[[(1s,2s)-2-[bis(carboxymethyl)amino]cyclohexyl]-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)[C@H]1CCCC[C@@H]1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UWVGGRQHSA-N 0.000 claims 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 claims 1
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000012038 nucleophile Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- HMBHAQMOBKLWRX-UHFFFAOYSA-N 2,3-dihydro-1,4-benzodioxine-3-carboxylic acid Chemical compound C1=CC=C2OC(C(=O)O)COC2=C1 HMBHAQMOBKLWRX-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- GQWNECFJGBQMBO-UHFFFAOYSA-N Molindone hydrochloride Chemical compound Cl.O=C1C=2C(CC)=C(C)NC=2CCC1CN1CCOCC1 GQWNECFJGBQMBO-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000002219 ammoniagenic effect Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 229960003237 betaine Drugs 0.000 description 1
- 229940075419 choline hydroxide Drugs 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 150000002443 hydroxylamines Chemical class 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000007344 nucleophilic reaction Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30403601P | 2001-07-09 | 2001-07-09 | |
| PCT/US2002/021375 WO2003006598A1 (en) | 2001-07-09 | 2002-07-08 | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008280900A Division JP4753986B2 (ja) | 2001-07-09 | 2008-10-31 | 基板適合性が改善されたアンモニア不含アルカリ性マイクロエレクトロニクス洗浄組成物の使用 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004536910A JP2004536910A (ja) | 2004-12-09 |
| JP2004536910A5 true JP2004536910A5 (enExample) | 2006-07-13 |
| JP4256258B2 JP4256258B2 (ja) | 2009-04-22 |
Family
ID=23174755
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003512357A Expired - Fee Related JP4256258B2 (ja) | 2001-07-09 | 2002-07-08 | 基板適合性が改善されたアンモニア不含アルカリ性マイクロエレクトロニクス洗浄組成物 |
| JP2008280900A Expired - Fee Related JP4753986B2 (ja) | 2001-07-09 | 2008-10-31 | 基板適合性が改善されたアンモニア不含アルカリ性マイクロエレクトロニクス洗浄組成物の使用 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008280900A Expired - Fee Related JP4753986B2 (ja) | 2001-07-09 | 2008-10-31 | 基板適合性が改善されたアンモニア不含アルカリ性マイクロエレクトロニクス洗浄組成物の使用 |
Country Status (22)
| Country | Link |
|---|---|
| US (1) | US20040220065A1 (enExample) |
| EP (1) | EP1404797B1 (enExample) |
| JP (2) | JP4256258B2 (enExample) |
| KR (1) | KR101009550B1 (enExample) |
| CN (1) | CN100410359C (enExample) |
| AT (1) | ATE355356T1 (enExample) |
| AU (1) | AU2002326341A1 (enExample) |
| BR (1) | BR0210888A (enExample) |
| CA (1) | CA2452885C (enExample) |
| DE (1) | DE60218468T2 (enExample) |
| DK (1) | DK1404797T3 (enExample) |
| ES (1) | ES2282453T3 (enExample) |
| IL (2) | IL159762A0 (enExample) |
| IN (1) | IN2004CH00044A (enExample) |
| MY (1) | MY131912A (enExample) |
| NO (1) | NO20040068L (enExample) |
| PL (1) | PL199523B1 (enExample) |
| PT (1) | PT1404797E (enExample) |
| RS (1) | RS51832B (enExample) |
| TW (1) | TWI262946B (enExample) |
| WO (1) | WO2003006598A1 (enExample) |
| ZA (1) | ZA200400067B (enExample) |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| JP4282054B2 (ja) * | 2002-09-09 | 2009-06-17 | 東京応化工業株式会社 | デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法 |
| US20040220066A1 (en) * | 2003-05-01 | 2004-11-04 | Rohm And Haas Electronic Materials, L.L.C. | Stripper |
| US7442675B2 (en) | 2003-06-18 | 2008-10-28 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning composition and method of cleaning semiconductor substrate |
| US6930017B2 (en) | 2003-08-21 | 2005-08-16 | Micron Technology, Inc. | Wafer Cleaning method and resulting wafer |
| JP2005075924A (ja) * | 2003-08-29 | 2005-03-24 | Neos Co Ltd | シリカスケール除去剤 |
| KR100593668B1 (ko) | 2004-01-20 | 2006-06-28 | 삼성전자주식회사 | 세정액 조성물 및 이를 이용한 반도체 장치의 세정방법 |
| EP1715510B2 (en) * | 2004-02-09 | 2016-02-24 | Mitsubishi Chemical Corporation | Substrate cleaning liquid for semiconductor device and cleaning method |
| US7498295B2 (en) | 2004-02-12 | 2009-03-03 | Air Liquide Electronics U.S. Lp | Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide |
| US7435712B2 (en) * | 2004-02-12 | 2008-10-14 | Air Liquide America, L.P. | Alkaline chemistry for post-CMP cleaning |
| US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| JP4390616B2 (ja) | 2004-04-27 | 2009-12-24 | Necエレクトロニクス株式会社 | 洗浄液及び半導体装置の製造方法 |
| WO2006056298A1 (en) * | 2004-11-25 | 2006-06-01 | Basf Aktiengesellschaft | Resist stripper and residue remover for cleaning copper surfaces in semiconductor processing |
| KR20060064441A (ko) * | 2004-12-08 | 2006-06-13 | 말린크로트 베이커, 인코포레이티드 | 비수성 비부식성 마이크로전자 세정 조성물 |
| US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
| TWI393178B (zh) * | 2005-01-27 | 2013-04-11 | Advanced Tech Materials | 半導體基板處理用之組成物 |
| KR100675284B1 (ko) * | 2005-02-01 | 2007-01-26 | 삼성전자주식회사 | 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법 |
| US7365045B2 (en) * | 2005-03-30 | 2008-04-29 | Advanced Tehnology Materials, Inc. | Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide |
| KR20060108436A (ko) * | 2005-04-13 | 2006-10-18 | 매그나칩 반도체 유한회사 | 반도체 소자 세정용 조성물 및 이를 이용한 반도체 소자의세정 방법 |
| JP4667147B2 (ja) * | 2005-07-15 | 2011-04-06 | 株式会社トクヤマ | 基板洗浄液 |
| US8772214B2 (en) * | 2005-10-14 | 2014-07-08 | Air Products And Chemicals, Inc. | Aqueous cleaning composition for removing residues and method using same |
| US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| US8263539B2 (en) | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
| US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| TW200734448A (en) * | 2006-02-03 | 2007-09-16 | Advanced Tech Materials | Low pH post-CMP residue removal composition and method of use |
| KR100770217B1 (ko) * | 2006-06-12 | 2007-10-26 | 삼성전자주식회사 | 포토레지스트 제거용 조성물 및 이를 이용한 범프 전극의형성 방법 |
| US20080076688A1 (en) * | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
| US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| WO2008039730A1 (en) * | 2006-09-25 | 2008-04-03 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
| US8183195B2 (en) * | 2007-02-14 | 2012-05-22 | Avantor Performance Materials, Inc. | Peroxide activated oxometalate based formulations for removal of etch residue |
| JP4848504B2 (ja) * | 2007-03-14 | 2011-12-28 | 公益財団法人新産業創造研究機構 | セラミックス基板又は無機耐熱性基板の洗浄方法及びこれを用いた素子の製造方法並びに素子 |
| KR20100051839A (ko) * | 2007-08-02 | 2010-05-18 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 마이크로전자 장치로부터 잔사를 제거하기 위한 플루오라이드 비-함유 조성물 |
| KR100900341B1 (ko) | 2007-08-21 | 2009-06-02 | (주)켐넥스 | 액정 표시 패널 세정제 |
| US7976638B2 (en) * | 2007-11-13 | 2011-07-12 | Sachem, Inc. | High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean |
| JP5412722B2 (ja) * | 2007-11-27 | 2014-02-12 | 富士通株式会社 | 電子装置の製造方法 |
| WO2010048139A2 (en) | 2008-10-21 | 2010-04-29 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
| JP4903242B2 (ja) * | 2008-10-28 | 2012-03-28 | アバントール パフォーマンス マテリアルズ, インコーポレイテッド | 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物 |
| CN101735903B (zh) * | 2008-11-04 | 2012-02-01 | 江阴市润玛电子材料有限公司 | 一种太阳能光伏专用电子清洗剂 |
| US8361237B2 (en) * | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
| RU2011139105A (ru) | 2009-02-25 | 2013-04-10 | Авантор Перформанс Матириалз, Инк. | Композиции для удаления фоторезиста для очистки ионно-имплантированного фоторезиста с пластин полупроводниковых устройств |
| US8309502B2 (en) | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8444768B2 (en) | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8614053B2 (en) | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
| US8110535B2 (en) * | 2009-08-05 | 2012-02-07 | Air Products And Chemicals, Inc. | Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same |
| US8518865B2 (en) * | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
| US8298751B2 (en) | 2009-11-02 | 2012-10-30 | International Business Machines Corporation | Alkaline rinse agents for use in lithographic patterning |
| DE102010006099A1 (de) * | 2010-01-28 | 2011-08-18 | EXCOR Korrosionsforschung GmbH, 01067 | Zusammensetzungen von Dampfphasen-Korrosionsinhibitoren, Verfahren zu deren Herstellung und deren Verwendung für den temporären Korrosionsschutz |
| JP5508130B2 (ja) * | 2010-05-14 | 2014-05-28 | 富士フイルム株式会社 | 洗浄組成物、半導体装置の製造方法及び洗浄方法 |
| CN101838111B (zh) * | 2010-05-20 | 2012-06-27 | 合肥茂丰电子科技有限公司 | 玻璃基板蚀刻液及其制备方法 |
| DE102011050136A1 (de) | 2010-09-03 | 2012-03-08 | Schott Solar Ag | Verfahren zum nasschemischen Ätzen einer Siliziumschicht |
| US9831088B2 (en) | 2010-10-06 | 2017-11-28 | Entegris, Inc. | Composition and process for selectively etching metal nitrides |
| US8889609B2 (en) | 2011-03-16 | 2014-11-18 | Air Products And Chemicals, Inc. | Cleaning formulations and method of using the cleaning formulations |
| JP6066552B2 (ja) | 2011-12-06 | 2017-01-25 | 関東化學株式会社 | 電子デバイス用洗浄液組成物 |
| CN102662312A (zh) * | 2012-04-20 | 2012-09-12 | 陕西科技大学 | 一种金属基印刷ps 版上预感光涂层的清洗液及清洗方法 |
| US9536730B2 (en) | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
| US9029268B2 (en) | 2012-11-21 | 2015-05-12 | Dynaloy, Llc | Process for etching metals |
| US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
| JP6203525B2 (ja) | 2013-04-19 | 2017-09-27 | 関東化學株式会社 | 洗浄液組成物 |
| CN103336412B (zh) * | 2013-07-03 | 2017-02-08 | 北京科华微电子材料有限公司 | 一种新型的光刻胶剥离液及其应用工艺 |
| WO2015156171A1 (ja) * | 2014-04-10 | 2015-10-15 | 三菱瓦斯化学株式会社 | 半導体素子の洗浄用液体組成物、および半導体素子の洗浄方法 |
| CN107155367B (zh) * | 2014-06-30 | 2021-12-21 | 恩特格里斯公司 | 利用钨及钴兼容性移除蚀刻后残余物的含水及半含水清洁剂 |
| KR102191643B1 (ko) * | 2016-03-01 | 2020-12-17 | 도오꾜오까고오교 가부시끼가이샤 | 반도체 기판 또는 장치의 세정액 및 세정 방법 |
| US11353794B2 (en) * | 2017-12-22 | 2022-06-07 | Versum Materials Us, Llc | Photoresist stripper |
| CN109962015B (zh) * | 2017-12-22 | 2021-11-02 | 长鑫存储技术有限公司 | 用于改善铜线短路的制程工艺 |
| WO2021035671A1 (en) * | 2019-08-30 | 2021-03-04 | Dow Global Technologies Llc | Photoresist stripping composition |
| KR20220012521A (ko) * | 2020-07-23 | 2022-02-04 | 주식회사 케이씨텍 | 세정액 조성물 및 이를 이용한 세정 방법 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4744834A (en) * | 1986-04-30 | 1988-05-17 | Noor Haq | Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide |
| US5091103A (en) * | 1990-05-01 | 1992-02-25 | Alicia Dean | Photoresist stripper |
| US6110881A (en) * | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
| JP3160344B2 (ja) * | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | 有機ストリッピング組成物 |
| WO1994006265A1 (de) * | 1992-09-03 | 1994-03-17 | Circuit Chemical Products Gmbh | Reinigungsmittelgemisch zum reinigen von gedruckten schaltungen und verfahren hierzu |
| US5308745A (en) * | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
| US5320709A (en) * | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
| JP3422117B2 (ja) * | 1994-01-28 | 2003-06-30 | 和光純薬工業株式会社 | 新規な表面処理方法及び処理剤 |
| US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5498293A (en) * | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| US5478436A (en) * | 1994-12-27 | 1995-12-26 | Motorola, Inc. | Selective cleaning process for fabricating a semiconductor device |
| US5563119A (en) * | 1995-01-26 | 1996-10-08 | Ashland Inc. | Stripping compositions containing alkanolamine compounds |
| US5571447A (en) * | 1995-03-20 | 1996-11-05 | Ashland Inc. | Stripping and cleaning composition |
| JP3236220B2 (ja) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| US5855811A (en) * | 1996-10-03 | 1999-01-05 | Micron Technology, Inc. | Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication |
| US5989353A (en) * | 1996-10-11 | 1999-11-23 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| US5709756A (en) * | 1996-11-05 | 1998-01-20 | Ashland Inc. | Basic stripping and cleaning composition |
| US5698503A (en) * | 1996-11-08 | 1997-12-16 | Ashland Inc. | Stripping and cleaning composition |
| WO1998030667A1 (en) * | 1997-01-09 | 1998-07-16 | Advanced Technology Materials, Inc. | Semiconductor wafer cleaning composition and method with aqueous ammonium fluoride and amine |
| US5798323A (en) * | 1997-05-05 | 1998-08-25 | Olin Microelectronic Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
| JPH1167632A (ja) * | 1997-08-18 | 1999-03-09 | Mitsubishi Gas Chem Co Inc | 半導体装置用洗浄剤 |
| US6211126B1 (en) * | 1997-12-23 | 2001-04-03 | Advanced Technology Materials, Inc. | Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates |
| US6432209B2 (en) * | 1998-03-03 | 2002-08-13 | Silicon Valley Chemlabs | Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates |
| US6225030B1 (en) * | 1998-03-03 | 2001-05-01 | Tokyo Ohka Kogyo Co., Ltd. | Post-ashing treating method for substrates |
| ATE436043T1 (de) * | 1998-05-18 | 2009-07-15 | Mallinckrodt Baker Inc | Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate |
| US6043005A (en) * | 1998-06-03 | 2000-03-28 | Haq; Noor | Polymer remover/photoresist stripper |
| US6103680A (en) * | 1998-12-31 | 2000-08-15 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition and method for removing photoresist and/or plasma etching residues |
| US6248704B1 (en) * | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
| JP3372903B2 (ja) * | 1999-06-21 | 2003-02-04 | ニチゴー・モートン株式会社 | フォトレジスト剥離剤 |
| JP3410403B2 (ja) * | 1999-09-10 | 2003-05-26 | 東京応化工業株式会社 | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 |
| JP4283952B2 (ja) * | 1999-10-12 | 2009-06-24 | 多摩化学工業株式会社 | 非鉄金属洗浄用洗浄液組成物 |
| US6413923B2 (en) * | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US6194366B1 (en) * | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6417147B2 (en) * | 2000-02-29 | 2002-07-09 | Showa Denko K.K. | Cleaning agent composition, method for cleaning and use thereof |
| US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| WO2002045148A2 (de) * | 2000-11-29 | 2002-06-06 | Infineon Technologies Ag | Reinigungslösung für halbleiterscheiben im beol-bereich |
| US6627587B2 (en) * | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
| MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| US6916772B2 (en) * | 2001-07-13 | 2005-07-12 | Ekc Technology, Inc. | Sulfoxide pyrolid(in)one alkanolamine cleaner composition |
| US7393819B2 (en) * | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
-
2002
- 2002-07-05 MY MYPI20022557A patent/MY131912A/en unknown
- 2002-07-08 JP JP2003512357A patent/JP4256258B2/ja not_active Expired - Fee Related
- 2002-07-08 IL IL15976202A patent/IL159762A0/xx active IP Right Grant
- 2002-07-08 WO PCT/US2002/021375 patent/WO2003006598A1/en not_active Ceased
- 2002-07-08 DE DE60218468T patent/DE60218468T2/de not_active Expired - Lifetime
- 2002-07-08 BR BR0210888-7A patent/BR0210888A/pt not_active IP Right Cessation
- 2002-07-08 CN CNB028138767A patent/CN100410359C/zh not_active Expired - Lifetime
- 2002-07-08 RS YU1204A patent/RS51832B/sr unknown
- 2002-07-08 PT PT02761045T patent/PT1404797E/pt unknown
- 2002-07-08 EP EP02761045A patent/EP1404797B1/en not_active Expired - Lifetime
- 2002-07-08 PL PL367434A patent/PL199523B1/pl not_active IP Right Cessation
- 2002-07-08 DK DK02761045T patent/DK1404797T3/da active
- 2002-07-08 US US10/482,876 patent/US20040220065A1/en not_active Abandoned
- 2002-07-08 CA CA2452885A patent/CA2452885C/en not_active Expired - Fee Related
- 2002-07-08 AU AU2002326341A patent/AU2002326341A1/en not_active Abandoned
- 2002-07-08 AT AT02761045T patent/ATE355356T1/de active
- 2002-07-08 KR KR1020047000268A patent/KR101009550B1/ko not_active Expired - Lifetime
- 2002-07-08 ES ES02761045T patent/ES2282453T3/es not_active Expired - Lifetime
- 2002-07-09 TW TW091115178A patent/TWI262946B/zh not_active IP Right Cessation
-
2004
- 2004-01-06 ZA ZA200400067A patent/ZA200400067B/en unknown
- 2004-01-07 IL IL159762A patent/IL159762A/en not_active IP Right Cessation
- 2004-01-08 NO NO20040068A patent/NO20040068L/no not_active Application Discontinuation
- 2004-01-08 IN IN44CH2004 patent/IN2004CH00044A/en unknown
-
2008
- 2008-10-31 JP JP2008280900A patent/JP4753986B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2004536910A5 (enExample) | ||
| TWI289738B (en) | Photoresist stripping composition and cleaning composition | |
| EP1404797B1 (en) | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility | |
| US5612304A (en) | Redox reagent-containing post-etch residue cleaning composition | |
| KR100541300B1 (ko) | 개선된 수성 스트립핑 조성물 | |
| JP2005500408A5 (enExample) | ||
| EP1720966B1 (en) | Nanoelectronic and microelectronic cleaning compositions | |
| CA2452921A1 (en) | Microelectronic cleaning compositions containing ammonia-free fluoride salts | |
| US7393819B2 (en) | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility | |
| JPH07295240A (ja) | 非腐食性フォトレジスト剥離用組成物 | |
| WO2008125002A1 (fr) | Composition nettoyante destinée à retirer une couche de réserve épaisse | |
| JP2004536181A5 (enExample) | ||
| CA2452884C (en) | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility | |
| EP1836535A1 (en) | Non-aqueous, non-corrosive microelectronic cleaning compositions | |
| JP6497668B2 (ja) | フォトレジスト除去用ストリッパー組成物およびこれを用いたフォトレジストの剥離方法 | |
| JP4442017B2 (ja) | レジスト剥離剤 | |
| JP2002062669A (ja) | レジスト剥離剤 | |
| TW202414119A (zh) | Igzo基板用剝離液組合物、其製備方法及半導體裝置 | |
| JP2002040675A (ja) | レジスト剥離剤 | |
| JP2015068845A (ja) | レジスト剥離剤及びそれを用いたレジスト剥離方法 |