JP2005500408A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005500408A5 JP2005500408A5 JP2003512358A JP2003512358A JP2005500408A5 JP 2005500408 A5 JP2005500408 A5 JP 2005500408A5 JP 2003512358 A JP2003512358 A JP 2003512358A JP 2003512358 A JP2003512358 A JP 2003512358A JP 2005500408 A5 JP2005500408 A5 JP 2005500408A5
- Authority
- JP
- Japan
- Prior art keywords
- atoms
- group
- weight
- cleaning composition
- hydroxyethyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 claims 19
- 229910052757 nitrogen Inorganic materials 0.000 claims 16
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 16
- 125000004437 phosphorous atom Chemical group 0.000 claims 16
- 229910052717 sulfur Inorganic materials 0.000 claims 16
- 238000000034 method Methods 0.000 claims 15
- 125000005842 heteroatom Chemical group 0.000 claims 14
- 229910052760 oxygen Inorganic materials 0.000 claims 14
- 125000004434 sulfur atom Chemical group 0.000 claims 14
- 125000000217 alkyl group Chemical group 0.000 claims 12
- 125000004430 oxygen atom Chemical group O* 0.000 claims 12
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 claims 12
- 239000002184 metal Substances 0.000 claims 10
- 229910052751 metal Inorganic materials 0.000 claims 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims 8
- 125000003118 aryl group Chemical group 0.000 claims 8
- 238000005260 corrosion Methods 0.000 claims 8
- 230000007797 corrosion Effects 0.000 claims 8
- 125000000753 cycloalkyl group Chemical group 0.000 claims 8
- 125000002993 cycloalkylene group Chemical group 0.000 claims 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 8
- 125000004432 carbon atom Chemical group C* 0.000 claims 7
- 239000002904 solvent Substances 0.000 claims 7
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 6
- 125000000732 arylene group Chemical group 0.000 claims 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims 6
- 150000004673 fluoride salts Chemical class 0.000 claims 6
- 229910052739 hydrogen Inorganic materials 0.000 claims 6
- 239000001257 hydrogen Substances 0.000 claims 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 6
- 239000003960 organic solvent Substances 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims 4
- 125000002947 alkylene group Chemical group 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 230000002401 inhibitory effect Effects 0.000 claims 4
- -1 silicate compound Chemical class 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- RJLKIAGOYBARJG-UHFFFAOYSA-N 1,3-dimethylpiperidin-2-one Chemical compound CC1CCCN(C)C1=O RJLKIAGOYBARJG-UHFFFAOYSA-N 0.000 claims 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims 2
- KKFDCBRMNNSAAW-UHFFFAOYSA-N 2-(morpholin-4-yl)ethanol Chemical compound OCCN1CCOCC1 KKFDCBRMNNSAAW-UHFFFAOYSA-N 0.000 claims 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims 2
- 229940058020 2-amino-2-methyl-1-propanol Drugs 0.000 claims 2
- LTACQVCHVAUOKN-UHFFFAOYSA-N 3-(diethylamino)propane-1,2-diol Chemical compound CCN(CC)CC(O)CO LTACQVCHVAUOKN-UHFFFAOYSA-N 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 2
- GAWIXWVDTYZWAW-UHFFFAOYSA-N C[CH]O Chemical group C[CH]O GAWIXWVDTYZWAW-UHFFFAOYSA-N 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 2
- PVCJKHHOXFKFRP-UHFFFAOYSA-N N-acetylethanolamine Chemical group CC(=O)NCCO PVCJKHHOXFKFRP-UHFFFAOYSA-N 0.000 claims 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims 2
- 150000001412 amines Chemical class 0.000 claims 2
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims 2
- 239000012964 benzotriazole Substances 0.000 claims 2
- 239000002738 chelating agent Substances 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims 2
- KZNICNPSHKQLFF-UHFFFAOYSA-N dihydromaleimide Natural products O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 claims 2
- 239000003112 inhibitor Substances 0.000 claims 2
- 230000005764 inhibitory process Effects 0.000 claims 2
- 238000001465 metallisation Methods 0.000 claims 2
- 238000004377 microelectronic Methods 0.000 claims 2
- 150000007522 mineralic acids Chemical class 0.000 claims 2
- 150000007524 organic acids Chemical class 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 229960002317 succinimide Drugs 0.000 claims 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims 2
- 239000004094 surface-active agent Substances 0.000 claims 2
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30403301P | 2001-07-09 | 2001-07-09 | |
| PCT/US2002/021436 WO2003006599A1 (en) | 2001-07-09 | 2002-07-08 | Microelectronic cleaning compositions containing ammonia-free fluoride salts |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005500408A JP2005500408A (ja) | 2005-01-06 |
| JP2005500408A5 true JP2005500408A5 (enExample) | 2006-01-05 |
| JP4188232B2 JP4188232B2 (ja) | 2008-11-26 |
Family
ID=23174742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003512358A Expired - Fee Related JP4188232B2 (ja) | 2001-07-09 | 2002-07-08 | 選択的フォトレジストストリッピングおよびプラズマ灰化残渣洗浄のための、アンモニア不含フッ化物塩含有マイクロエレクトロニクス洗浄組成物 |
Country Status (21)
| Country | Link |
|---|---|
| US (2) | US7247208B2 (enExample) |
| EP (1) | EP1404795B1 (enExample) |
| JP (1) | JP4188232B2 (enExample) |
| KR (1) | KR101031926B1 (enExample) |
| CN (1) | CN100513545C (enExample) |
| AT (1) | ATE487785T1 (enExample) |
| AU (1) | AU2002316588A1 (enExample) |
| BR (1) | BR0210895A (enExample) |
| CA (1) | CA2452921C (enExample) |
| DE (1) | DE60238258D1 (enExample) |
| DK (1) | DK1404795T3 (enExample) |
| ES (1) | ES2358256T3 (enExample) |
| IL (2) | IL159760A0 (enExample) |
| MY (1) | MY143399A (enExample) |
| NO (1) | NO20040070L (enExample) |
| PL (1) | PL199393B1 (enExample) |
| PT (1) | PT1404795E (enExample) |
| RS (1) | RS51684B (enExample) |
| TW (1) | TWI281944B (enExample) |
| WO (1) | WO2003006599A1 (enExample) |
| ZA (1) | ZA200400065B (enExample) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7348300B2 (en) * | 1999-05-04 | 2008-03-25 | Air Products And Chemicals, Inc. | Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture |
| US7208049B2 (en) * | 2003-10-20 | 2007-04-24 | Air Products And Chemicals, Inc. | Process solutions containing surfactants used as post-chemical mechanical planarization treatment |
| MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| MY131912A (en) * | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| KR20060014388A (ko) * | 2003-05-02 | 2006-02-15 | 이케이씨 테크놀로지, 인코포레이티드 | 반도체 공정에서의 에칭후 잔류물의 제거 방법 |
| US7888301B2 (en) | 2003-12-02 | 2011-02-15 | Advanced Technology Materials, Inc. | Resist, barc and gap fill material stripping chemical and method |
| WO2005083523A1 (en) | 2004-02-11 | 2005-09-09 | Mallinckrodt Baker Inc. | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
| US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
| KR100606187B1 (ko) * | 2004-07-14 | 2006-08-01 | 테크노세미켐 주식회사 | 반도체 기판 세정용 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법 |
| JP4463054B2 (ja) * | 2004-09-17 | 2010-05-12 | 東京応化工業株式会社 | ホトレジスト用剥離液およびこれを用いた基板の処理方法 |
| KR20060064441A (ko) * | 2004-12-08 | 2006-06-13 | 말린크로트 베이커, 인코포레이티드 | 비수성 비부식성 마이크로전자 세정 조성물 |
| TWI393178B (zh) * | 2005-01-27 | 2013-04-11 | Advanced Tech Materials | 半導體基板處理用之組成物 |
| KR20060108436A (ko) * | 2005-04-13 | 2006-10-18 | 매그나칩 반도체 유한회사 | 반도체 소자 세정용 조성물 및 이를 이용한 반도체 소자의세정 방법 |
| KR20080005408A (ko) * | 2005-05-06 | 2008-01-11 | 말린크로트 베이커, 인코포레이티드 | 포스트-에치 및 애싱된 포토레지스트 잔류물 및 벌크포토레지스트의 제거를 위한 조성물 |
| TWI282363B (en) * | 2005-05-19 | 2007-06-11 | Epoch Material Co Ltd | Aqueous cleaning composition for semiconductor copper processing |
| KR101477455B1 (ko) | 2005-06-07 | 2014-12-29 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 금속 및 유전체 상용성 희생 반사 방지 코팅 세정 및 제거 조성물 |
| TWI339780B (en) * | 2005-07-28 | 2011-04-01 | Rohm & Haas Elect Mat | Stripper |
| US20070151949A1 (en) * | 2006-01-04 | 2007-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor processes and apparatuses thereof |
| US7534753B2 (en) * | 2006-01-12 | 2009-05-19 | Air Products And Chemicals, Inc. | pH buffered aqueous cleaning composition and method for removing photoresist residue |
| US20070179072A1 (en) * | 2006-01-30 | 2007-08-02 | Rao Madhukar B | Cleaning formulations |
| US20070219105A1 (en) * | 2006-03-17 | 2007-09-20 | Georgia Tech Research Corporation | Ionic Additives to Solvent-Based Strippers |
| KR101449774B1 (ko) * | 2006-12-21 | 2014-10-14 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 에칭 후 잔류물의 제거를 위한 액체 세정제 |
| US8026201B2 (en) * | 2007-01-03 | 2011-09-27 | Az Electronic Materials Usa Corp. | Stripper for coating layer |
| TW200925268A (en) * | 2007-12-06 | 2009-06-16 | Mallinckrodt Baker Inc | Fluoride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction |
| CN101481640B (zh) * | 2008-01-10 | 2011-05-18 | 长兴开发科技股份有限公司 | 水性清洗组合物 |
| CN201219685Y (zh) * | 2008-04-16 | 2009-04-15 | 韩广民 | 组装结构产品及庭院椅 |
| US20090270299A1 (en) * | 2008-04-23 | 2009-10-29 | Nissan Chemical Industries, Ltd. | Composition for removing protective layer in fabrication of MEMS and method for removing same |
| CN101666984B (zh) * | 2008-09-05 | 2012-08-22 | 安集微电子科技(上海)有限公司 | 一种等离子刻蚀残留物清洗液 |
| KR101486116B1 (ko) | 2008-10-09 | 2015-01-28 | 아반토르 퍼포먼스 머티리얼스, 인크. | 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물 |
| JP4903242B2 (ja) * | 2008-10-28 | 2012-03-28 | アバントール パフォーマンス マテリアルズ， インコーポレイテッド | 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物 |
| RU2011139105A (ru) | 2009-02-25 | 2013-04-10 | Авантор Перформанс Матириалз, Инк. | Композиции для удаления фоторезиста для очистки ионно-имплантированного фоторезиста с пластин полупроводниковых устройств |
| US8614053B2 (en) | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
| US8444768B2 (en) | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8309502B2 (en) * | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8110535B2 (en) | 2009-08-05 | 2012-02-07 | Air Products And Chemicals, Inc. | Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same |
| US8518865B2 (en) | 2009-08-31 | 2013-08-27 | Air Products And Chemicals, Inc. | Water-rich stripping and cleaning formulation and method for using same |
| TWI516879B (zh) * | 2009-09-09 | 2016-01-11 | 東友精細化工有限公司 | 形成銅系配線用光阻剝離劑組成物、使用其來製造半導體裝置及平板顯示器之方法 |
| SG179060A1 (en) * | 2009-09-18 | 2012-04-27 | Merck Patent Gmbh | Ink jet printable etching inks and associated process |
| TWI470119B (zh) * | 2009-11-13 | 2015-01-21 | Avantor Performance Mat Inc | 用於氧化銅蝕刻殘留物之移除及避免銅電鍍之水相酸性調配物 |
| BR112012018074A2 (pt) * | 2010-01-21 | 2017-09-19 | Sun Chemical Corp | "sistema de solventes com baixo voc" |
| JP2013533631A (ja) | 2010-07-16 | 2013-08-22 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | エッチング後残渣を除去するための水性洗浄剤 |
| JP2012058273A (ja) * | 2010-09-03 | 2012-03-22 | Kanto Chem Co Inc | フォトレジスト残渣およびポリマー残渣除去液組成物 |
| US8889609B2 (en) | 2011-03-16 | 2014-11-18 | Air Products And Chemicals, Inc. | Cleaning formulations and method of using the cleaning formulations |
| WO2013101907A1 (en) | 2011-12-28 | 2013-07-04 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
| TWI572711B (zh) * | 2012-10-16 | 2017-03-01 | 盟智科技股份有限公司 | 半導體製程用的清洗組成物及清洗方法 |
| US9536730B2 (en) | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
| US9029268B2 (en) | 2012-11-21 | 2015-05-12 | Dynaloy, Llc | Process for etching metals |
| WO2014168037A1 (ja) * | 2013-04-12 | 2014-10-16 | 三菱瓦斯化学株式会社 | 銅およびチタンを含む多層膜のエッチングに使用される液体組成物、および該組成物を用いたエッチング方法、多層膜配線の製造方法、基板 |
| KR102261638B1 (ko) | 2013-11-15 | 2021-06-08 | 삼성디스플레이 주식회사 | 세정제 조성물 및 이를 이용한 금속배선 제조방법 |
| KR102157278B1 (ko) * | 2015-03-19 | 2020-09-17 | 동우 화인켐 주식회사 | 포토레지스트 제거용 세정액 조성물 |
| JP6495230B2 (ja) * | 2016-12-22 | 2019-04-03 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
| KR20210024187A (ko) * | 2018-07-20 | 2021-03-04 | 엔테그리스, 아이엔씨. | 부식 억제제를 갖는 세정 조성물 |
| US12221595B2 (en) | 2019-01-15 | 2025-02-11 | Resonac Corporation | Decomposing/cleaning composition, method for cleaning adhesive polymer, and method for producing device wafer |
| US20230039366A1 (en) * | 2020-04-09 | 2023-02-09 | Showa Denko K.K. | Composition, and method for cleaning adhesive polymer |
| WO2022043111A1 (en) * | 2020-08-25 | 2022-03-03 | Basf Se | Composition, its use and a process for removing post-etch residues |
| US12374639B2 (en) * | 2022-04-04 | 2025-07-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Non-DMSO stripper for advance package metal plating process |
Family Cites Families (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4744834A (en) * | 1986-04-30 | 1988-05-17 | Noor Haq | Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide |
| WO1988005813A1 (en) | 1987-02-05 | 1988-08-11 | Macdermid, Incorporated | Photoresist stripper composition |
| US5091103A (en) * | 1990-05-01 | 1992-02-25 | Alicia Dean | Photoresist stripper |
| US6110881A (en) * | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
| JP3160344B2 (ja) * | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | 有機ストリッピング組成物 |
| WO1994006265A1 (de) | 1992-09-03 | 1994-03-17 | Circuit Chemical Products Gmbh | Reinigungsmittelgemisch zum reinigen von gedruckten schaltungen und verfahren hierzu |
| US5308745A (en) * | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
| US5320709A (en) * | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
| JP3264405B2 (ja) * | 1994-01-07 | 2002-03-11 | 三菱瓦斯化学株式会社 | 半導体装置洗浄剤および半導体装置の製造方法 |
| US5466389A (en) | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
| US5498293A (en) | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| US5447884A (en) | 1994-06-29 | 1995-09-05 | International Business Machines Corporation | Shallow trench isolation with thin nitride liner |
| US5478436A (en) * | 1994-12-27 | 1995-12-26 | Motorola, Inc. | Selective cleaning process for fabricating a semiconductor device |
| US5563119A (en) * | 1995-01-26 | 1996-10-08 | Ashland Inc. | Stripping compositions containing alkanolamine compounds |
| US5571447A (en) * | 1995-03-20 | 1996-11-05 | Ashland Inc. | Stripping and cleaning composition |
| JP3236220B2 (ja) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| US5783495A (en) | 1995-11-13 | 1998-07-21 | Micron Technology, Inc. | Method of wafer cleaning, and system and cleaning solution regarding same |
| DE19543161A1 (de) | 1995-11-18 | 1997-05-22 | Basf Ag | Verfahren zur Herstellung von verzweigten Polyamiden |
| US6030932A (en) | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| US5855811A (en) | 1996-10-03 | 1999-01-05 | Micron Technology, Inc. | Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication |
| US5989353A (en) | 1996-10-11 | 1999-11-23 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
| US5709756A (en) * | 1996-11-05 | 1998-01-20 | Ashland Inc. | Basic stripping and cleaning composition |
| US5698503A (en) * | 1996-11-08 | 1997-12-16 | Ashland Inc. | Stripping and cleaning composition |
| US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6755989B2 (en) * | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| WO1998030677A1 (en) | 1997-01-10 | 1998-07-16 | The Scripps Research Institute | Cataractogenesis and disruption of d3 connexin gene in mammals and methods of use |
| JPH1167632A (ja) * | 1997-08-18 | 1999-03-09 | Mitsubishi Gas Chem Co Inc | 半導体装置用洗浄剤 |
| US6012469A (en) | 1997-09-17 | 2000-01-11 | Micron Technology, Inc. | Etch residue clean |
| US6211126B1 (en) * | 1997-12-23 | 2001-04-03 | Advanced Technology Materials, Inc. | Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates |
| US6432209B2 (en) * | 1998-03-03 | 2002-08-13 | Silicon Valley Chemlabs | Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates |
| US6225030B1 (en) * | 1998-03-03 | 2001-05-01 | Tokyo Ohka Kogyo Co., Ltd. | Post-ashing treating method for substrates |
| JPH11323394A (ja) * | 1998-05-14 | 1999-11-26 | Texas Instr Japan Ltd | 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法 |
| ATE436043T1 (de) | 1998-05-18 | 2009-07-15 | Mallinckrodt Baker Inc | Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate |
| US6043005A (en) * | 1998-06-03 | 2000-03-28 | Haq; Noor | Polymer remover/photoresist stripper |
| JP2000147362A (ja) | 1998-11-18 | 2000-05-26 | Seiko Epson Corp | プリズムへの電気光学装置取り付け方法ならびに投写型表示装置の製造方法 |
| US6103680A (en) * | 1998-12-31 | 2000-08-15 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition and method for removing photoresist and/or plasma etching residues |
| US6248704B1 (en) * | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
| US6703319B1 (en) * | 1999-06-17 | 2004-03-09 | Micron Technology, Inc. | Compositions and methods for removing etch residue |
| JP3372903B2 (ja) | 1999-06-21 | 2003-02-04 | ニチゴー・モートン株式会社 | フォトレジスト剥離剤 |
| US6562726B1 (en) | 1999-06-29 | 2003-05-13 | Micron Technology, Inc. | Acid blend for removing etch residue |
| US6235693B1 (en) | 1999-07-16 | 2001-05-22 | Ekc Technology, Inc. | Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices |
| JP3410403B2 (ja) * | 1999-09-10 | 2003-05-26 | 東京応化工業株式会社 | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 |
| US6361712B1 (en) * | 1999-10-15 | 2002-03-26 | Arch Specialty Chemicals, Inc. | Composition for selective etching of oxides over metals |
| US6194366B1 (en) | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6417147B2 (en) | 2000-02-29 | 2002-07-09 | Showa Denko K.K. | Cleaning agent composition, method for cleaning and use thereof |
| US6777380B2 (en) * | 2000-07-10 | 2004-08-17 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
| US7456140B2 (en) * | 2000-07-10 | 2008-11-25 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
| US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| WO2002045148A2 (de) | 2000-11-29 | 2002-06-06 | Infineon Technologies Ag | Reinigungslösung für halbleiterscheiben im beol-bereich |
| US6627587B2 (en) * | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
| US20030022800A1 (en) * | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
| MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| MY131912A (en) * | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| US6916772B2 (en) * | 2001-07-13 | 2005-07-12 | Ekc Technology, Inc. | Sulfoxide pyrolid(in)one alkanolamine cleaner composition |
| US6773873B2 (en) * | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
| RS50930B (sr) * | 2002-06-07 | 2010-08-31 | Avantor Performance Materials Inc. | Kompozicije za mikroelektronsko čišćenje koje sadrže oksidatore i organske rastvarače |
| JP2004029346A (ja) * | 2002-06-25 | 2004-01-29 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
| US7393819B2 (en) * | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| KR101056544B1 (ko) * | 2003-08-19 | 2011-08-11 | 아반토르 퍼포먼스 머티리얼스, 인크. | 마이크로전자 기판용 박리 및 세정 조성물 |
| EP1692572A2 (en) * | 2003-10-29 | 2006-08-23 | Mallinckrodt Baker, Inc. | Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors |
| BRPI0508291A (pt) * | 2004-03-01 | 2007-07-31 | Mallinckrodt Baker Inc | composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza |
| JP4456424B2 (ja) * | 2004-06-29 | 2010-04-28 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物 |
| EP1701218A3 (en) * | 2005-03-11 | 2008-10-15 | Rohm and Haas Electronic Materials LLC | Polymer remover |
| US7700533B2 (en) * | 2005-06-23 | 2010-04-20 | Air Products And Chemicals, Inc. | Composition for removal of residue comprising cationic salts and methods using same |
| TWI339780B (en) * | 2005-07-28 | 2011-04-01 | Rohm & Haas Elect Mat | Stripper |
| TW200722505A (en) * | 2005-09-30 | 2007-06-16 | Rohm & Haas Elect Mat | Stripper |
| JP2009075285A (ja) * | 2007-09-20 | 2009-04-09 | Fujifilm Corp | 半導体デバイスの剥離液、及び、剥離方法 |
-
2002
- 2002-07-05 MY MYPI20022559A patent/MY143399A/en unknown
- 2002-07-08 US US10/483,036 patent/US7247208B2/en not_active Expired - Lifetime
- 2002-07-08 KR KR1020047000267A patent/KR101031926B1/ko not_active Expired - Lifetime
- 2002-07-08 CA CA2452921A patent/CA2452921C/en not_active Expired - Fee Related
- 2002-07-08 ES ES02746902T patent/ES2358256T3/es not_active Expired - Lifetime
- 2002-07-08 IL IL15976002A patent/IL159760A0/xx active IP Right Grant
- 2002-07-08 JP JP2003512358A patent/JP4188232B2/ja not_active Expired - Fee Related
- 2002-07-08 PL PL368044A patent/PL199393B1/pl not_active IP Right Cessation
- 2002-07-08 BR BR0210895-0A patent/BR0210895A/pt not_active IP Right Cessation
- 2002-07-08 DE DE60238258T patent/DE60238258D1/de not_active Expired - Lifetime
- 2002-07-08 AT AT02746902T patent/ATE487785T1/de active
- 2002-07-08 EP EP02746902A patent/EP1404795B1/en not_active Expired - Lifetime
- 2002-07-08 RS YU1004A patent/RS51684B/sr unknown
- 2002-07-08 WO PCT/US2002/021436 patent/WO2003006599A1/en not_active Ceased
- 2002-07-08 PT PT02746902T patent/PT1404795E/pt unknown
- 2002-07-08 AU AU2002316588A patent/AU2002316588A1/en not_active Abandoned
- 2002-07-08 DK DK02746902.2T patent/DK1404795T3/da active
- 2002-07-08 CN CNB028138775A patent/CN100513545C/zh not_active Expired - Fee Related
- 2002-07-09 TW TW091115180A patent/TWI281944B/zh not_active IP Right Cessation
-
2004
- 2004-01-06 ZA ZA200400065A patent/ZA200400065B/en unknown
- 2004-01-07 IL IL159760A patent/IL159760A/en not_active IP Right Cessation
- 2004-01-08 NO NO20040070A patent/NO20040070L/no not_active Application Discontinuation
-
2007
- 2007-06-13 US US11/762,087 patent/US7718591B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2005500408A5 (enExample) | ||
| CA2452921A1 (en) | Microelectronic cleaning compositions containing ammonia-free fluoride salts | |
| JP2004536910A5 (enExample) | ||
| JP4147320B2 (ja) | プラズマエッチング残留物を除去するための非腐食性洗浄組成物 | |
| US9256134B2 (en) | Photoresist removal | |
| JP3403187B2 (ja) | ホトレジスト用剥離液 | |
| JP4633785B2 (ja) | ナノエレクトロニクスおよびマイクロエレクトロニクスの洗浄組成物 | |
| KR101131228B1 (ko) | ＣｏＷＰ 및 다공성 유전체를 위한 습식 세정 조성물 | |
| RS1204A (sr) | Alkalni preparati bez amonijaka za čišćenje mikroelektronike sa boljom kompatibilnošću prema supstratu | |
| US7393819B2 (en) | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility | |
| TWI261734B (en) | Photoresist removing solution and method for removing photoresist using same | |
| CA2425613A1 (en) | Stabilized alkaline compositions for cleaning microelectronic substrates | |
| WO2009046637A1 (fr) | Composition de nettoyage pour éliminer une photorésine | |
| JP6157081B2 (ja) | フォトリソグラフィ用剥離液、及びパターン形成方法 | |
| CN1784487B (zh) | 非水的、非腐蚀性的微电子清洁组合物 | |
| JP2008066747A (ja) | 水性フッ化アンモニウムおよびアミンを用いた、半導体ウエハ洗浄組成物および方法 | |
| JP2004536181A5 (enExample) | ||
| KR100944444B1 (ko) | 기판과의 양립성이 향상된 무암모니아 알칼리 마이크로일렉트로닉 세정 조성물 | |
| ES2345616T3 (es) | Composiciones de limpieza no acuosas para microelectronica que contienen fructosa. | |
| KR101880306B1 (ko) | 전자재료용 세정액 조성물 | |
| JPWO2018088202A1 (ja) | 洗浄液及び基板を洗浄する方法 | |
| JP2003530482A5 (enExample) | ||
| KR100520397B1 (ko) | 후-스트립 세정제 조성물 및 그를 이용한 포토레지스트스트립 공정 후의 반도체 소자 또는 액정표시소자의 세정방법 | |
| TW202411794A (zh) | 光阻剝離液 | |
| CN101842746A (zh) | 一种光刻胶清洗剂 |