JP2003530482A5 - - Google Patents

Download PDF

Info

Publication number
JP2003530482A5
JP2003530482A5 JP2001574886A JP2001574886A JP2003530482A5 JP 2003530482 A5 JP2003530482 A5 JP 2003530482A5 JP 2001574886 A JP2001574886 A JP 2001574886A JP 2001574886 A JP2001574886 A JP 2001574886A JP 2003530482 A5 JP2003530482 A5 JP 2003530482A5
Authority
JP
Japan
Prior art keywords
composition
titanium
hydroxylamine
trihydroxy
benzene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001574886A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003530482A (ja
Filing date
Publication date
Priority claimed from GBGB0009112.4A external-priority patent/GB0009112D0/en
Application filed filed Critical
Publication of JP2003530482A publication Critical patent/JP2003530482A/ja
Publication of JP2003530482A5 publication Critical patent/JP2003530482A5/ja
Pending legal-status Critical Current

Links

JP2001574886A 2000-04-12 2001-04-12 チタン腐食の抑制 Pending JP2003530482A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0009112.4A GB0009112D0 (en) 2000-04-12 2000-04-12 Inhibition of titanium corrosion
GB0009112.4 2000-04-12
PCT/GB2001/001686 WO2001078129A1 (en) 2000-04-12 2001-04-12 Inhibition of titanium corrosion

Publications (2)

Publication Number Publication Date
JP2003530482A JP2003530482A (ja) 2003-10-14
JP2003530482A5 true JP2003530482A5 (enExample) 2007-11-22

Family

ID=9889834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001574886A Pending JP2003530482A (ja) 2000-04-12 2001-04-12 チタン腐食の抑制

Country Status (11)

Country Link
US (1) US7012051B2 (enExample)
EP (1) EP1273033B1 (enExample)
JP (1) JP2003530482A (enExample)
KR (1) KR100889094B1 (enExample)
CN (1) CN1218373C (enExample)
AT (1) ATE345581T1 (enExample)
AU (1) AU4855501A (enExample)
DE (1) DE60124519T2 (enExample)
GB (1) GB0009112D0 (enExample)
TW (1) TWI281487B (enExample)
WO (1) WO2001078129A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050042051A (ko) * 2001-11-02 2005-05-04 미츠비시 가스 가가쿠 가부시키가이샤 레지스트 박리 방법
EP2427804B1 (en) * 2009-05-07 2019-10-02 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
JP5159738B2 (ja) * 2009-09-24 2013-03-13 株式会社東芝 半導体基板の洗浄方法および半導体基板の洗浄装置
US8101561B2 (en) * 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
JP2017197589A (ja) * 2014-09-04 2017-11-02 横浜油脂工業株式会社 紫外線硬化型塗料用剥離剤
US10133428B2 (en) * 2015-05-29 2018-11-20 Samsung Display Co., Ltd. Flexible display device including a flexible substrate having a bending part and a conductive pattern at least partially disposed on the bending part
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
US11408079B2 (en) 2019-07-30 2022-08-09 King Fahd University Of Petroleum And Minerals Corrosion inhibitor composition and methods of inhibiting corrosion during acid pickling
KR20250141260A (ko) * 2020-01-28 2025-09-26 후지필름 가부시키가이샤 처리액, 피처리물의 처리 방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3124614A1 (de) * 1980-06-27 1982-05-06 Amchem Products, Inc., 19002 Ambler, Pa. Reinigungsloesung, verfahren zum entfernen von verunreinigungen von einer zinnoberflaeche mit dieser reinigungsloesung und konzentrate hierfuer
US7205265B2 (en) 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
US6110881A (en) 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US6000411A (en) 1990-11-05 1999-12-14 Ekc Technology, Inc. Cleaning compositions for removing etching residue and method of using
US6121217A (en) 1990-11-05 2000-09-19 Ekc Technology, Inc. Alkanolamine semiconductor process residue removal composition and process
US6242400B1 (en) 1990-11-05 2001-06-05 Ekc Technology, Inc. Method of stripping resists from substrates using hydroxylamine and alkanolamine
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US6187730B1 (en) 1990-11-05 2001-02-13 Ekc Technology, Inc. Hydroxylamine-gallic compound composition and process
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US6492311B2 (en) 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US20040018949A1 (en) 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
US5981454A (en) 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US7144848B2 (en) 1992-07-09 2006-12-05 Ekc Technology, Inc. Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal
US6825156B2 (en) 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
DE69333877T2 (de) * 1992-07-09 2006-06-14 Ekc Technology Inc Reinigungsmittelzusammensetzung, das einem Redox Aminverbindung enthält
US20030032567A1 (en) 1992-07-09 2003-02-13 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US5654260A (en) * 1994-01-10 1997-08-05 Phillips Petroleum Company Corrosion inhibitor for wellbore applications
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US7534752B2 (en) 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
GB2342727A (en) * 1998-10-12 2000-04-19 Ekc Technology Ltd Composition to remove resists and tp inhibit titanium corrosion

Similar Documents

Publication Publication Date Title
KR100323326B1 (ko) 플라즈마 에칭 잔류물 제거용 비부식성 세정 조성물
US6455479B1 (en) Stripping composition
US8361237B2 (en) Wet clean compositions for CoWP and porous dielectrics
KR101226533B1 (ko) 포토레지스트 잔류물 및 폴리머 잔류물 제거 조성물
US6276372B1 (en) Process using hydroxylamine-gallic acid composition
JP5886946B2 (ja) 銅、タングステンおよび多孔質低κ誘電体に対する増強された相溶性を有する半水溶性ポリマー除去組成物
WO2003035797A1 (en) Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
EP1501916B1 (en) Non-corrosive cleaning compositions for removing etch residues
JP2006009006A (ja) 基材から残留物を除去するための組成物及びその組成物を用いた方法
JP2006505629A (ja) 水性ストリッピング及びクリーニング組成物
JP2006049860A (ja) はく離及び洗浄用の組成物並びにそれらの使用
JP2005528660A (ja) 半導体プロセス残留物除去組成物および方法
EP1877870B1 (en) Non-aqueous photoresist stripper that inhibits galvanic corrosion
EP1273033B1 (en) Trihydroxybenzene composition for inhibition of titanium corrosion
KR20070025444A (ko) 변성된 포토레지스트 제거를 위한 반도체 소자용 박리액조성물
JP2003530482A5 (enExample)
WO2002077120A1 (en) Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
JP4698123B2 (ja) レジスト除去剤組成物
JP4028904B2 (ja) ヒドロキシルアミン−没食子化合物の組成物及びその使用方法
JP2006152303A (ja) 残留物を除去するための組成物及び方法
CN101156111A (zh) 用于半导体器件的光刻胶的去除剂组合物
US11926807B2 (en) Cleaning composition and cleaning method using the same
WO2000022662A1 (en) Inhibition of titanium corrosion
JP2023107076A (ja) フォトレジスト剥離組成物
KR20170040477A (ko) 포토레지스트 박리액 조성물