JP2003530482A - チタン腐食の抑制 - Google Patents
チタン腐食の抑制Info
- Publication number
- JP2003530482A JP2003530482A JP2001574886A JP2001574886A JP2003530482A JP 2003530482 A JP2003530482 A JP 2003530482A JP 2001574886 A JP2001574886 A JP 2001574886A JP 2001574886 A JP2001574886 A JP 2001574886A JP 2003530482 A JP2003530482 A JP 2003530482A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- hydroxylamine
- composition
- alkyl
- alkoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims description 38
- 229910052719 titanium Inorganic materials 0.000 title claims description 36
- 239000010936 titanium Substances 0.000 title claims description 36
- 238000005260 corrosion Methods 0.000 title claims description 21
- 230000007797 corrosion Effects 0.000 title claims description 21
- 150000001875 compounds Chemical class 0.000 claims abstract description 60
- 239000000203 mixture Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 31
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 19
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 14
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 13
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 9
- 150000002367 halogens Chemical class 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 33
- 239000000243 solution Substances 0.000 claims description 17
- -1 ethylene glycol alkyl ether Chemical class 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 16
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000003112 inhibitor Substances 0.000 claims description 12
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 239000003814 drug Substances 0.000 claims description 6
- 229940079593 drug Drugs 0.000 claims description 6
- KGLSCDCZTRKHSG-UHFFFAOYSA-N 1-phenyldecane-3,4,5-triol Chemical compound CCCCCC(O)C(O)C(O)CCC1=CC=CC=C1 KGLSCDCZTRKHSG-UHFFFAOYSA-N 0.000 claims description 5
- TYLQPNVZMYWIKQ-UHFFFAOYSA-N 1-phenylnonane-3,4,5-triol Chemical compound CCCCC(O)C(O)C(O)CCC1=CC=CC=C1 TYLQPNVZMYWIKQ-UHFFFAOYSA-N 0.000 claims description 5
- VOPGUMHRAOCWLV-UHFFFAOYSA-N 1-phenyltridecane-3,4,5-triol Chemical compound CCCCCCCCC(O)C(O)C(O)CCC1=CC=CC=C1 VOPGUMHRAOCWLV-UHFFFAOYSA-N 0.000 claims description 5
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 5
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 5
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 4
- 150000002443 hydroxylamines Chemical class 0.000 claims description 4
- QCZMJFIQRPYPSG-UHFFFAOYSA-N 1-phenyldodecane-3,4,5-triol Chemical compound CCCCCCCC(O)C(O)C(O)CCC1=CC=CC=C1 QCZMJFIQRPYPSG-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 claims description 3
- 239000002798 polar solvent Substances 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical group CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical group [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- 150000001412 amines Chemical group 0.000 claims description 2
- 239000000908 ammonium hydroxide Chemical group 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical group CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 2
- 229940043276 diisopropanolamine Drugs 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- 150000007524 organic acids Chemical class 0.000 claims description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims 3
- GVNHOISKXMSMPX-UHFFFAOYSA-N 2-[butyl(2-hydroxyethyl)amino]ethanol Chemical group CCCCN(CCO)CCO GVNHOISKXMSMPX-UHFFFAOYSA-N 0.000 claims 1
- FHUABAPZGBGMLA-UHFFFAOYSA-N 2-amino-2-ethoxyethanol Chemical compound CCOC(N)CO FHUABAPZGBGMLA-UHFFFAOYSA-N 0.000 claims 1
- AAPNYZIFLHHHMR-UHFFFAOYSA-N 2-amino-2-ethoxypropan-1-ol Chemical compound CCOC(C)(N)CO AAPNYZIFLHHHMR-UHFFFAOYSA-N 0.000 claims 1
- GOJUJUVQIVIZAV-UHFFFAOYSA-N 2-amino-4,6-dichloropyrimidine-5-carbaldehyde Chemical group NC1=NC(Cl)=C(C=O)C(Cl)=N1 GOJUJUVQIVIZAV-UHFFFAOYSA-N 0.000 claims 1
- 150000005215 alkyl ethers Chemical class 0.000 claims 1
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000005764 inhibitory process Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- XQHIFTTXCQZGSZ-UHFFFAOYSA-N 1-phenylundecane-3,4,5-triol Chemical compound CCCCCCC(O)C(O)C(O)CCC1=CC=CC=C1 XQHIFTTXCQZGSZ-UHFFFAOYSA-N 0.000 description 1
- DGCPZSLRAYKPND-UHFFFAOYSA-N 2-(2-aminoethoxy)propan-1-ol Chemical compound OCC(C)OCCN DGCPZSLRAYKPND-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- MTVLEKBQSDTQGO-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propan-1-ol Chemical compound CCOC(C)COC(C)CO MTVLEKBQSDTQGO-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- XHJGXOOOMKCJPP-UHFFFAOYSA-N 2-[tert-butyl(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(C(C)(C)C)CCO XHJGXOOOMKCJPP-UHFFFAOYSA-N 0.000 description 1
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 description 1
- BLFRQYKZFKYQLO-UHFFFAOYSA-N 4-aminobutan-1-ol Chemical compound NCCCCO BLFRQYKZFKYQLO-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001795 coordination polymer Polymers 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000004706 metal oxides Chemical group 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D9/00—Chemical paint or ink removers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0009112.4A GB0009112D0 (en) | 2000-04-12 | 2000-04-12 | Inhibition of titanium corrosion |
| GB0009112.4 | 2000-04-12 | ||
| PCT/GB2001/001686 WO2001078129A1 (en) | 2000-04-12 | 2001-04-12 | Inhibition of titanium corrosion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003530482A true JP2003530482A (ja) | 2003-10-14 |
| JP2003530482A5 JP2003530482A5 (enExample) | 2007-11-22 |
Family
ID=9889834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001574886A Pending JP2003530482A (ja) | 2000-04-12 | 2001-04-12 | チタン腐食の抑制 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US7012051B2 (enExample) |
| EP (1) | EP1273033B1 (enExample) |
| JP (1) | JP2003530482A (enExample) |
| KR (1) | KR100889094B1 (enExample) |
| CN (1) | CN1218373C (enExample) |
| AT (1) | ATE345581T1 (enExample) |
| AU (1) | AU4855501A (enExample) |
| DE (1) | DE60124519T2 (enExample) |
| GB (1) | GB0009112D0 (enExample) |
| TW (1) | TWI281487B (enExample) |
| WO (1) | WO2001078129A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016035843A1 (ja) * | 2014-09-04 | 2016-03-10 | 横浜油脂工業株式会社 | 紫外線硬化型塗料用剥離剤 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050042051A (ko) * | 2001-11-02 | 2005-05-04 | 미츠비시 가스 가가쿠 가부시키가이샤 | 레지스트 박리 방법 |
| EP2427804B1 (en) * | 2009-05-07 | 2019-10-02 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
| JP5159738B2 (ja) * | 2009-09-24 | 2013-03-13 | 株式会社東芝 | 半導体基板の洗浄方法および半導体基板の洗浄装置 |
| US8101561B2 (en) * | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
| US10133428B2 (en) * | 2015-05-29 | 2018-11-20 | Samsung Display Co., Ltd. | Flexible display device including a flexible substrate having a bending part and a conductive pattern at least partially disposed on the bending part |
| US11175587B2 (en) * | 2017-09-29 | 2021-11-16 | Versum Materials Us, Llc | Stripper solutions and methods of using stripper solutions |
| US11408079B2 (en) | 2019-07-30 | 2022-08-09 | King Fahd University Of Petroleum And Minerals | Corrosion inhibitor composition and methods of inhibiting corrosion during acid pickling |
| KR20250141260A (ko) * | 2020-01-28 | 2025-09-26 | 후지필름 가부시키가이샤 | 처리액, 피처리물의 처리 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5739181A (en) * | 1980-06-27 | 1982-03-04 | Amchem Prod | Low temperature cleaning agent for metal surface |
| JPH06266119A (ja) * | 1992-07-09 | 1994-09-22 | Ekc Technol Inc | 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7205265B2 (en) | 1990-11-05 | 2007-04-17 | Ekc Technology, Inc. | Cleaning compositions and methods of use thereof |
| US6110881A (en) | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
| US6000411A (en) | 1990-11-05 | 1999-12-14 | Ekc Technology, Inc. | Cleaning compositions for removing etching residue and method of using |
| US6121217A (en) | 1990-11-05 | 2000-09-19 | Ekc Technology, Inc. | Alkanolamine semiconductor process residue removal composition and process |
| US6242400B1 (en) | 1990-11-05 | 2001-06-05 | Ekc Technology, Inc. | Method of stripping resists from substrates using hydroxylamine and alkanolamine |
| US5279771A (en) | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
| US6187730B1 (en) | 1990-11-05 | 2001-02-13 | Ekc Technology, Inc. | Hydroxylamine-gallic compound composition and process |
| US6546939B1 (en) | 1990-11-05 | 2003-04-15 | Ekc Technology, Inc. | Post clean treatment |
| US6492311B2 (en) | 1990-11-05 | 2002-12-10 | Ekc Technology, Inc. | Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process |
| US20040018949A1 (en) | 1990-11-05 | 2004-01-29 | Wai Mun Lee | Semiconductor process residue removal composition and process |
| US5981454A (en) | 1993-06-21 | 1999-11-09 | Ekc Technology, Inc. | Post clean treatment composition comprising an organic acid and hydroxylamine |
| US7144848B2 (en) | 1992-07-09 | 2006-12-05 | Ekc Technology, Inc. | Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal |
| US6825156B2 (en) | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
| US20030032567A1 (en) | 1992-07-09 | 2003-02-13 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
| US6326130B1 (en) * | 1993-10-07 | 2001-12-04 | Mallinckrodt Baker, Inc. | Photoresist strippers containing reducing agents to reduce metal corrosion |
| US5654260A (en) * | 1994-01-10 | 1997-08-05 | Phillips Petroleum Company | Corrosion inhibitor for wellbore applications |
| US6323168B1 (en) | 1996-07-03 | 2001-11-27 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
| US7534752B2 (en) | 1996-07-03 | 2009-05-19 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
| GB2342727A (en) * | 1998-10-12 | 2000-04-19 | Ekc Technology Ltd | Composition to remove resists and tp inhibit titanium corrosion |
-
2000
- 2000-04-12 GB GBGB0009112.4A patent/GB0009112D0/en not_active Ceased
-
2001
- 2001-04-12 JP JP2001574886A patent/JP2003530482A/ja active Pending
- 2001-04-12 AU AU48555/01A patent/AU4855501A/en not_active Abandoned
- 2001-04-12 CN CN018080197A patent/CN1218373C/zh not_active Expired - Fee Related
- 2001-04-12 WO PCT/GB2001/001686 patent/WO2001078129A1/en not_active Ceased
- 2001-04-12 DE DE60124519T patent/DE60124519T2/de not_active Expired - Fee Related
- 2001-04-12 KR KR1020027013648A patent/KR100889094B1/ko not_active Expired - Fee Related
- 2001-04-12 US US10/257,469 patent/US7012051B2/en not_active Expired - Fee Related
- 2001-04-12 AT AT01921582T patent/ATE345581T1/de not_active IP Right Cessation
- 2001-04-12 EP EP01921582A patent/EP1273033B1/en not_active Expired - Lifetime
- 2001-04-16 TW TW090109022A patent/TWI281487B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5739181A (en) * | 1980-06-27 | 1982-03-04 | Amchem Prod | Low temperature cleaning agent for metal surface |
| JPH06266119A (ja) * | 1992-07-09 | 1994-09-22 | Ekc Technol Inc | 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤 |
| JPH11194505A (ja) * | 1992-07-09 | 1999-07-21 | Ekc Technol Inc | 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016035843A1 (ja) * | 2014-09-04 | 2016-03-10 | 横浜油脂工業株式会社 | 紫外線硬化型塗料用剥離剤 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040106530A1 (en) | 2004-06-03 |
| WO2001078129A1 (en) | 2001-10-18 |
| GB0009112D0 (en) | 2000-05-31 |
| AU4855501A (en) | 2001-10-23 |
| ATE345581T1 (de) | 2006-12-15 |
| DE60124519D1 (de) | 2006-12-28 |
| CN1218373C (zh) | 2005-09-07 |
| US7012051B2 (en) | 2006-03-14 |
| CN1423835A (zh) | 2003-06-11 |
| KR20030053470A (ko) | 2003-06-28 |
| EP1273033B1 (en) | 2006-11-15 |
| KR100889094B1 (ko) | 2009-03-17 |
| EP1273033A1 (en) | 2003-01-08 |
| DE60124519T2 (de) | 2007-05-31 |
| TWI281487B (en) | 2007-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6455479B1 (en) | Stripping composition | |
| EP2975108B1 (en) | Copper corrosion inhibition system | |
| JP3796622B2 (ja) | 非腐食性のストリッピングおよびクリーニング組成物 | |
| KR101226533B1 (ko) | 포토레지스트 잔류물 및 폴리머 잔류물 제거 조성물 | |
| JP5178837B2 (ja) | レゾルシノールを含有する剥離溶液を用いた金属保護の改善 | |
| TWI461525B (zh) | 用於ＣｏＷＰ及多孔介電材料的濕清洗組合物 | |
| CN100442449C (zh) | 半导体工艺中后蚀刻残留物的去除 | |
| JP2009102729A (ja) | 水性ストリッピング及びクリーニング組成物 | |
| JP2001501649A (ja) | プラズマエッチング残留物を除去するための非腐食性洗浄組成物 | |
| JP2005528660A (ja) | 半導体プロセス残留物除去組成物および方法 | |
| EP1501916B1 (en) | Non-corrosive cleaning compositions for removing etch residues | |
| JP2003532143A (ja) | レジスト剥離剤組成物 | |
| EP2715783A1 (en) | Semi-aqueous polymer removal compositions with enhanced compatibility to copper, tungsten, and porous low- dielectrics | |
| JP2008066747A (ja) | 水性フッ化アンモニウムおよびアミンを用いた、半導体ウエハ洗浄組成物および方法 | |
| CN1924710B (zh) | 用于去除半导体器件的改性光刻胶的光刻胶去除剂组合物 | |
| TWI292437B (en) | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility | |
| JP3792620B2 (ja) | 剥離剤組成物 | |
| CN101223265A (zh) | 剥离剂组合物 | |
| US7816312B2 (en) | Composition for photoresist stripping solution and process of photoresist stripping | |
| JP2003530482A (ja) | チタン腐食の抑制 | |
| CN101164016B (zh) | 抑制电化腐蚀的非水光致抗蚀剂剥离剂 | |
| JP2003530482A5 (enExample) | ||
| CN101156111B (zh) | 用于半导体器件的光刻胶的去除剂组合物 | |
| TWI296357B (en) | Compositions comprising tannic acid as corrosion inhibitor | |
| JP2003035963A (ja) | フォトレジスト残渣除去液組成物 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20071001 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071001 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100624 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100629 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20101124 |