KR100889094B1 - 티타늄 부식의 억제 - Google Patents

티타늄 부식의 억제 Download PDF

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Publication number
KR100889094B1
KR100889094B1 KR1020027013648A KR20027013648A KR100889094B1 KR 100889094 B1 KR100889094 B1 KR 100889094B1 KR 1020027013648 A KR1020027013648 A KR 1020027013648A KR 20027013648 A KR20027013648 A KR 20027013648A KR 100889094 B1 KR100889094 B1 KR 100889094B1
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KR
South Korea
Prior art keywords
composition
hydroxylamine
compound
substrate
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020027013648A
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English (en)
Korean (ko)
Other versions
KR20030053470A (ko
Inventor
제롬 다비오트
스탠리 아프로스만
더글라스 홀메스
Original Assignee
이케이씨 테크놀로지, 엘티디.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이케이씨 테크놀로지, 엘티디. filed Critical 이케이씨 테크놀로지, 엘티디.
Publication of KR20030053470A publication Critical patent/KR20030053470A/ko
Application granted granted Critical
Publication of KR100889094B1 publication Critical patent/KR100889094B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00—Chemical paint or ink removers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
  • ing And Chemical Polishing (AREA)
KR1020027013648A 2000-04-12 2001-04-12 티타늄 부식의 억제 Expired - Fee Related KR100889094B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0009112.4A GB0009112D0 (en) 2000-04-12 2000-04-12 Inhibition of titanium corrosion
GB0009112.4 2000-04-12
PCT/GB2001/001686 WO2001078129A1 (en) 2000-04-12 2001-04-12 Inhibition of titanium corrosion

Publications (2)

Publication Number Publication Date
KR20030053470A KR20030053470A (ko) 2003-06-28
KR100889094B1 true KR100889094B1 (ko) 2009-03-17

Family

ID=9889834

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027013648A Expired - Fee Related KR100889094B1 (ko) 2000-04-12 2001-04-12 티타늄 부식의 억제

Country Status (11)

Country Link
US (1) US7012051B2 (enExample)
EP (1) EP1273033B1 (enExample)
JP (1) JP2003530482A (enExample)
KR (1) KR100889094B1 (enExample)
CN (1) CN1218373C (enExample)
AT (1) ATE345581T1 (enExample)
AU (1) AU4855501A (enExample)
DE (1) DE60124519T2 (enExample)
GB (1) GB0009112D0 (enExample)
TW (1) TWI281487B (enExample)
WO (1) WO2001078129A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050042051A (ko) * 2001-11-02 2005-05-04 미츠비시 가스 가가쿠 가부시키가이샤 레지스트 박리 방법
EP2427804B1 (en) * 2009-05-07 2019-10-02 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
JP5159738B2 (ja) * 2009-09-24 2013-03-13 株式会社東芝 半導体基板の洗浄方法および半導体基板の洗浄装置
US8101561B2 (en) * 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
JP2017197589A (ja) * 2014-09-04 2017-11-02 横浜油脂工業株式会社 紫外線硬化型塗料用剥離剤
US10133428B2 (en) * 2015-05-29 2018-11-20 Samsung Display Co., Ltd. Flexible display device including a flexible substrate having a bending part and a conductive pattern at least partially disposed on the bending part
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
US11408079B2 (en) 2019-07-30 2022-08-09 King Fahd University Of Petroleum And Minerals Corrosion inhibitor composition and methods of inhibiting corrosion during acid pickling
KR20250141260A (ko) * 2020-01-28 2025-09-26 후지필름 가부시키가이샤 처리액, 피처리물의 처리 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998016592A1 (en) * 1995-06-02 1998-04-23 Phillips Petroleum Company Corrosion inhibitor for wellbore applications

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3124614A1 (de) * 1980-06-27 1982-05-06 Amchem Products, Inc., 19002 Ambler, Pa. Reinigungsloesung, verfahren zum entfernen von verunreinigungen von einer zinnoberflaeche mit dieser reinigungsloesung und konzentrate hierfuer
US7205265B2 (en) 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
US6110881A (en) 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US6000411A (en) 1990-11-05 1999-12-14 Ekc Technology, Inc. Cleaning compositions for removing etching residue and method of using
US6121217A (en) 1990-11-05 2000-09-19 Ekc Technology, Inc. Alkanolamine semiconductor process residue removal composition and process
US6242400B1 (en) 1990-11-05 2001-06-05 Ekc Technology, Inc. Method of stripping resists from substrates using hydroxylamine and alkanolamine
US5279771A (en) 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US6187730B1 (en) 1990-11-05 2001-02-13 Ekc Technology, Inc. Hydroxylamine-gallic compound composition and process
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US6492311B2 (en) 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
US20040018949A1 (en) 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
US5981454A (en) 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US7144848B2 (en) 1992-07-09 2006-12-05 Ekc Technology, Inc. Cleaning compositions containing hydroxylamine derivatives and processes using same for residue removal
US6825156B2 (en) 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
DE69333877T2 (de) * 1992-07-09 2006-06-14 Ekc Technology Inc Reinigungsmittelzusammensetzung, das einem Redox Aminverbindung enthält
US20030032567A1 (en) 1992-07-09 2003-02-13 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
US7534752B2 (en) 1996-07-03 2009-05-19 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
GB2342727A (en) * 1998-10-12 2000-04-19 Ekc Technology Ltd Composition to remove resists and tp inhibit titanium corrosion

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998016592A1 (en) * 1995-06-02 1998-04-23 Phillips Petroleum Company Corrosion inhibitor for wellbore applications

Also Published As

Publication number Publication date
US20040106530A1 (en) 2004-06-03
WO2001078129A1 (en) 2001-10-18
GB0009112D0 (en) 2000-05-31
AU4855501A (en) 2001-10-23
ATE345581T1 (de) 2006-12-15
DE60124519D1 (de) 2006-12-28
CN1218373C (zh) 2005-09-07
US7012051B2 (en) 2006-03-14
CN1423835A (zh) 2003-06-11
JP2003530482A (ja) 2003-10-14
KR20030053470A (ko) 2003-06-28
EP1273033B1 (en) 2006-11-15
EP1273033A1 (en) 2003-01-08
DE60124519T2 (de) 2007-05-31
TWI281487B (en) 2007-05-21

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