BRPI0508291A - composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza - Google Patents
composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpezaInfo
- Publication number
- BRPI0508291A BRPI0508291A BRPI0508291-9A BRPI0508291A BRPI0508291A BR PI0508291 A BRPI0508291 A BR PI0508291A BR PI0508291 A BRPI0508291 A BR PI0508291A BR PI0508291 A BRPI0508291 A BR PI0508291A
- Authority
- BR
- Brazil
- Prior art keywords
- formulation
- weight
- nanoelectronic
- optionally
- compositions
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 15
- 238000004140 cleaning Methods 0.000 title abstract 7
- 238000004377 microelectronic Methods 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 238000009472 formulation Methods 0.000 abstract 7
- 239000012530 fluid Substances 0.000 abstract 4
- 150000001408 amides Chemical class 0.000 abstract 3
- 239000002904 solvent Substances 0.000 abstract 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- 150000001298 alcohols Chemical class 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 abstract 2
- 230000007797 corrosion Effects 0.000 abstract 2
- 230000002401 inhibitory effect Effects 0.000 abstract 2
- 238000001465 metallisation Methods 0.000 abstract 2
- 230000000269 nucleophilic effect Effects 0.000 abstract 2
- 239000003960 organic solvent Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 239000003495 polar organic solvent Substances 0.000 abstract 2
- 229920006395 saturated elastomer Polymers 0.000 abstract 2
- 150000003966 selones Chemical class 0.000 abstract 2
- 150000003457 sulfones Chemical class 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- -1 cobaldo Chemical compound 0.000 abstract 1
- 230000000536 complexating effect Effects 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000003607 modifier Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- MBDNRNMVTZADMQ-UHFFFAOYSA-N sulfolene Chemical class O=S1(=O)CC=CC1 MBDNRNMVTZADMQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 239000011135 tin Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/395—Bleaching agents
- C11D3/3956—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
COMPOSIçõES E PROCESSO DE LIMPEZA PARA SUBSTRATOS NANOELETRÈNICOS E MICROELETRÈNICOS. A presente invenção refere-se a composições de limpeza nanoeletrónicos e microeletrónicos em condições de estado de fluido supercrítico, e especificamente composições de limpeza úteis e possuindo compatibilidade aperfeiçoada com substratos nanoeletrónicos e microeletrónicos caracterizados por dióxido de silício, dielétricos sensíveis de baixo k ou alto k e cobre, tungstênio, tântalo, níquel, ouro, cobaldo, paládio, platina, cromo, rutênio, ródio, irídio, háfnio, titânio, molibdênio, estanho e outra metalização, bem como substratos de metalizações e AI ou AI(Cu) e tecnologias de interconexão avançadas, são providas por composições de limpeza nanoeletrónica e microeletrónica compreendendo composições de limpeza nanoeletrónica e microeletrónica dessa invenção sendo providas por composições compreendendo: (1) um fluido principal supercrítico alcançando um estado de fuido supercrítico a uma temperatura de 250 C ou menos e uma pressão de 60MPa (592,2 atm), e (2) como um fluido secundário, uma formulação modificadora selecionada do grupo consistindo nas formulações que se seguem: a) uma formulação compreendendo: um agente oxidante; solvente orgânico polar selecionado do grupo consistindo em amidas, sulfonas, sulfolenos, selenonas e álcoois saturados e opcionalmente outros componentes; b) uma formulação isenta de silicato compreendendo: um solvente orgânico polar selecionado do grupo consistindo em amidas, sulfonas, selenonas e álcoois saturados; uma base alcalina forte;e opcionalmente outros componentes; c) uma formulação compreendendo: cerca de 0,05% a 30% em peso de uma ou mais bases fortes de não produção de amónio contendo contra-íons carregados positivamente não-nucleofílicos; cerca de 0,5 a cerca de 99,95% em peso de um ou mais compostos solventes inibidores de corrosão, o composto solvente inibidor de corrosão possuindo pelo menos dois sítios capazes de complexação com metais; e opcionalmente outros componentes; d) uma formulação compreendendo: cerca de 0,05 a 20% em peso de um ou mais sal de fluoreto de não produção de HF, não produção de amónio; cerca de 5 a cerca de 99,95% em peso de água, solvente orgânico ou ambos água e solvente orgânico; e opcionalmente outros componentes; e e) uma formulação compreendendo: cerca de 0,05% a 30% em peso de uma ou mais bases fortes de não produção de amónio contendo contr-íons carregados positivamente não-nucleofílicos; cerca de 5 a cerca de 99,95% em peso de um ou mais solventes de amida impedida estperica e opcionalmente outros componentes.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54897704P | 2004-03-01 | 2004-03-01 | |
PCT/US2005/004350 WO2005093032A1 (en) | 2004-03-01 | 2005-02-11 | Nanoelectronic and microelectronic cleaning compositions |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI0508291A true BRPI0508291A (pt) | 2007-07-31 |
Family
ID=34960788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0508291-9A BRPI0508291A (pt) | 2004-03-01 | 2005-02-11 | composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza |
Country Status (20)
Country | Link |
---|---|
US (1) | US7767636B2 (pt) |
EP (1) | EP1720966B1 (pt) |
JP (1) | JP4633785B2 (pt) |
KR (1) | KR101154692B1 (pt) |
CN (1) | CN1961065B (pt) |
AT (1) | ATE488570T1 (pt) |
BR (1) | BRPI0508291A (pt) |
CA (1) | CA2558069A1 (pt) |
DE (1) | DE602005024772D1 (pt) |
DK (1) | DK1720966T3 (pt) |
ES (1) | ES2354077T3 (pt) |
IL (1) | IL177728A (pt) |
MY (1) | MY146442A (pt) |
NO (1) | NO20064349L (pt) |
PL (1) | PL1720966T3 (pt) |
PT (1) | PT1720966E (pt) |
SG (1) | SG150509A1 (pt) |
TW (1) | TWI379174B (pt) |
WO (1) | WO2005093032A1 (pt) |
ZA (1) | ZA200607122B (pt) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
WO2006056298A1 (en) * | 2004-11-25 | 2006-06-01 | Basf Aktiengesellschaft | Resist stripper and residue remover for cleaning copper surfaces in semiconductor processing |
KR100675284B1 (ko) * | 2005-02-01 | 2007-01-26 | 삼성전자주식회사 | 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법 |
WO2006107517A2 (en) * | 2005-04-04 | 2006-10-12 | Mallinckrodt Baker, Inc. | Composition for cleaning ion implanted photoresist in front end of line applications |
EP1932174A4 (en) | 2005-10-05 | 2009-09-23 | Advanced Tech Materials | AQUEOUS OXIDIZING CLEANER FOR REMOVING RESIDUES AFTER A PLASMA ATTACK |
US20070240740A1 (en) * | 2006-04-13 | 2007-10-18 | Mcdermott Wayne T | Cleaning of contaminated articles by aqueous supercritical oxidation |
US7772128B2 (en) * | 2006-06-09 | 2010-08-10 | Lam Research Corporation | Semiconductor system with surface modification |
BRPI0808074A2 (pt) * | 2007-02-14 | 2014-08-05 | Mallinckrodt Baker Inc | Formulações com base em oxometalato ativado por peróxido para remoção de resíduo de gravação à água forte |
KR101416103B1 (ko) * | 2007-11-12 | 2014-07-09 | (주)코미코 | 불순물 제거용 세정액 및 이를 이용한 불순물 제거방법 |
CN101685274B (zh) * | 2008-09-26 | 2012-08-22 | 安集微电子(上海)有限公司 | 一种用于厚膜光刻胶的清洗剂 |
JP5212827B2 (ja) * | 2009-02-04 | 2013-06-19 | 富士電機株式会社 | 磁気記録媒体の製造方法、及びこの方法により製造された磁気記録媒体 |
WO2010091045A2 (en) * | 2009-02-05 | 2010-08-12 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of polymers and other organic material from a surface |
BRPI1008034A2 (pt) * | 2009-02-25 | 2016-03-15 | Avantor Performance Mat Inc | composições removedoras para limpeza de fotorresistor implantado por íons de discos de silício de dispositivos semicondutores |
SG173834A1 (en) * | 2009-02-25 | 2011-09-29 | Avantor Performance Mat Inc | Multipurpose acidic, organic solvent based microelectronic cleaning composition |
WO2011154875A1 (en) * | 2010-06-09 | 2011-12-15 | Basf Se | Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates |
CN101912857B (zh) * | 2010-07-21 | 2011-12-14 | 河北工业大学 | 锑化铟晶片碱性化学机械抛光后的表面洁净方法 |
JP5985156B2 (ja) * | 2011-04-04 | 2016-09-06 | 東京エレクトロン株式会社 | 半導体基板の超臨界乾燥方法及び装置 |
EP2540800A1 (en) * | 2011-06-30 | 2013-01-02 | Solvay Sa | Process for etching using sulfur compounds |
WO2013052809A1 (en) | 2011-10-05 | 2013-04-11 | Avantor Performance Materials, Inc. | Microelectronic substrate cleaning compositions having copper/azole polymer inhibition |
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2005
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- 2005-02-11 US US10/584,827 patent/US7767636B2/en not_active Expired - Fee Related
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- 2005-02-11 DK DK05713349.8T patent/DK1720966T3/da active
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WO2005093032A1 (en) | 2005-10-06 |
CN1961065B (zh) | 2011-01-26 |
CN1961065A (zh) | 2007-05-09 |
ES2354077T3 (es) | 2011-03-09 |
ATE488570T1 (de) | 2010-12-15 |
ZA200607122B (en) | 2008-09-25 |
US20090163396A1 (en) | 2009-06-25 |
JP2007525851A (ja) | 2007-09-06 |
SG150509A1 (en) | 2009-03-30 |
PT1720966E (pt) | 2010-12-21 |
DE602005024772D1 (de) | 2010-12-30 |
US7767636B2 (en) | 2010-08-03 |
KR101154692B1 (ko) | 2012-06-08 |
IL177728A (en) | 2011-08-31 |
TWI379174B (en) | 2012-12-11 |
EP1720966A1 (en) | 2006-11-15 |
CA2558069A1 (en) | 2005-10-06 |
IL177728A0 (en) | 2006-12-31 |
TW200534054A (en) | 2005-10-16 |
NO20064349L (no) | 2006-11-30 |
DK1720966T3 (da) | 2011-02-28 |
KR20070003888A (ko) | 2007-01-05 |
PL1720966T3 (pl) | 2011-06-30 |
EP1720966B1 (en) | 2010-11-17 |
JP4633785B2 (ja) | 2011-02-16 |
MY146442A (en) | 2012-08-15 |
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