BRPI0508291A - composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza - Google Patents

composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza

Info

Publication number
BRPI0508291A
BRPI0508291A BRPI0508291-9A BRPI0508291A BRPI0508291A BR PI0508291 A BRPI0508291 A BR PI0508291A BR PI0508291 A BRPI0508291 A BR PI0508291A BR PI0508291 A BRPI0508291 A BR PI0508291A
Authority
BR
Brazil
Prior art keywords
formulation
weight
nanoelectronic
optionally
compositions
Prior art date
Application number
BRPI0508291-9A
Other languages
English (en)
Inventor
Chien Pin Sherman Hsu
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of BRPI0508291A publication Critical patent/BRPI0508291A/pt

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39Organic or inorganic per-compounds
    • C11D3/3947Liquid compositions
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395Bleaching agents
    • C11D3/3956Liquid compositions
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/261Alcohols; Phenols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/34Organic compounds containing sulfur
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5009Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5013Organic solvents containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5022Organic solvents containing oxygen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/426Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40Specific cleaning or washing processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

COMPOSIçõES E PROCESSO DE LIMPEZA PARA SUBSTRATOS NANOELETRÈNICOS E MICROELETRÈNICOS. A presente invenção refere-se a composições de limpeza nanoeletrónicos e microeletrónicos em condições de estado de fluido supercrítico, e especificamente composições de limpeza úteis e possuindo compatibilidade aperfeiçoada com substratos nanoeletrónicos e microeletrónicos caracterizados por dióxido de silício, dielétricos sensíveis de baixo k ou alto k e cobre, tungstênio, tântalo, níquel, ouro, cobaldo, paládio, platina, cromo, rutênio, ródio, irídio, háfnio, titânio, molibdênio, estanho e outra metalização, bem como substratos de metalizações e AI ou AI(Cu) e tecnologias de interconexão avançadas, são providas por composições de limpeza nanoeletrónica e microeletrónica compreendendo composições de limpeza nanoeletrónica e microeletrónica dessa invenção sendo providas por composições compreendendo: (1) um fluido principal supercrítico alcançando um estado de fuido supercrítico a uma temperatura de 250 C ou menos e uma pressão de 60MPa (592,2 atm), e (2) como um fluido secundário, uma formulação modificadora selecionada do grupo consistindo nas formulações que se seguem: a) uma formulação compreendendo: um agente oxidante; solvente orgânico polar selecionado do grupo consistindo em amidas, sulfonas, sulfolenos, selenonas e álcoois saturados e opcionalmente outros componentes; b) uma formulação isenta de silicato compreendendo: um solvente orgânico polar selecionado do grupo consistindo em amidas, sulfonas, selenonas e álcoois saturados; uma base alcalina forte;e opcionalmente outros componentes; c) uma formulação compreendendo: cerca de 0,05% a 30% em peso de uma ou mais bases fortes de não produção de amónio contendo contra-íons carregados positivamente não-nucleofílicos; cerca de 0,5 a cerca de 99,95% em peso de um ou mais compostos solventes inibidores de corrosão, o composto solvente inibidor de corrosão possuindo pelo menos dois sítios capazes de complexação com metais; e opcionalmente outros componentes; d) uma formulação compreendendo: cerca de 0,05 a 20% em peso de um ou mais sal de fluoreto de não produção de HF, não produção de amónio; cerca de 5 a cerca de 99,95% em peso de água, solvente orgânico ou ambos água e solvente orgânico; e opcionalmente outros componentes; e e) uma formulação compreendendo: cerca de 0,05% a 30% em peso de uma ou mais bases fortes de não produção de amónio contendo contr-íons carregados positivamente não-nucleofílicos; cerca de 5 a cerca de 99,95% em peso de um ou mais solventes de amida impedida estperica e opcionalmente outros componentes.
BRPI0508291-9A 2004-03-01 2005-02-11 composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza BRPI0508291A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54897704P 2004-03-01 2004-03-01
PCT/US2005/004350 WO2005093032A1 (en) 2004-03-01 2005-02-11 Nanoelectronic and microelectronic cleaning compositions

Publications (1)

Publication Number Publication Date
BRPI0508291A true BRPI0508291A (pt) 2007-07-31

Family

ID=34960788

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0508291-9A BRPI0508291A (pt) 2004-03-01 2005-02-11 composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza

Country Status (20)

Country Link
US (1) US7767636B2 (pt)
EP (1) EP1720966B1 (pt)
JP (1) JP4633785B2 (pt)
KR (1) KR101154692B1 (pt)
CN (1) CN1961065B (pt)
AT (1) ATE488570T1 (pt)
BR (1) BRPI0508291A (pt)
CA (1) CA2558069A1 (pt)
DE (1) DE602005024772D1 (pt)
DK (1) DK1720966T3 (pt)
ES (1) ES2354077T3 (pt)
IL (1) IL177728A (pt)
MY (1) MY146442A (pt)
NO (1) NO20064349L (pt)
PL (1) PL1720966T3 (pt)
PT (1) PT1720966E (pt)
SG (1) SG150509A1 (pt)
TW (1) TWI379174B (pt)
WO (1) WO2005093032A1 (pt)
ZA (1) ZA200607122B (pt)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
WO2006056298A1 (en) * 2004-11-25 2006-06-01 Basf Aktiengesellschaft Resist stripper and residue remover for cleaning copper surfaces in semiconductor processing
KR100675284B1 (ko) * 2005-02-01 2007-01-26 삼성전자주식회사 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법
WO2006107517A2 (en) * 2005-04-04 2006-10-12 Mallinckrodt Baker, Inc. Composition for cleaning ion implanted photoresist in front end of line applications
EP1932174A4 (en) 2005-10-05 2009-09-23 Advanced Tech Materials AQUEOUS OXIDIZING CLEANER FOR REMOVING RESIDUES AFTER A PLASMA ATTACK
US20070240740A1 (en) * 2006-04-13 2007-10-18 Mcdermott Wayne T Cleaning of contaminated articles by aqueous supercritical oxidation
US7772128B2 (en) * 2006-06-09 2010-08-10 Lam Research Corporation Semiconductor system with surface modification
BRPI0808074A2 (pt) * 2007-02-14 2014-08-05 Mallinckrodt Baker Inc Formulações com base em oxometalato ativado por peróxido para remoção de resíduo de gravação à água forte
KR101416103B1 (ko) * 2007-11-12 2014-07-09 (주)코미코 불순물 제거용 세정액 및 이를 이용한 불순물 제거방법
CN101685274B (zh) * 2008-09-26 2012-08-22 安集微电子(上海)有限公司 一种用于厚膜光刻胶的清洗剂
JP5212827B2 (ja) * 2009-02-04 2013-06-19 富士電機株式会社 磁気記録媒体の製造方法、及びこの方法により製造された磁気記録媒体
WO2010091045A2 (en) * 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
BRPI1008034A2 (pt) * 2009-02-25 2016-03-15 Avantor Performance Mat Inc composições removedoras para limpeza de fotorresistor implantado por íons de discos de silício de dispositivos semicondutores
SG173834A1 (en) * 2009-02-25 2011-09-29 Avantor Performance Mat Inc Multipurpose acidic, organic solvent based microelectronic cleaning composition
WO2011154875A1 (en) * 2010-06-09 2011-12-15 Basf Se Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
CN101912857B (zh) * 2010-07-21 2011-12-14 河北工业大学 锑化铟晶片碱性化学机械抛光后的表面洁净方法
JP5985156B2 (ja) * 2011-04-04 2016-09-06 東京エレクトロン株式会社 半導体基板の超臨界乾燥方法及び装置
EP2540800A1 (en) * 2011-06-30 2013-01-02 Solvay Sa Process for etching using sulfur compounds
WO2013052809A1 (en) 2011-10-05 2013-04-11 Avantor Performance Materials, Inc. Microelectronic substrate cleaning compositions having copper/azole polymer inhibition
SG11201406961PA (en) * 2012-04-27 2014-11-27 Wako Pure Chem Ind Ltd Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US8853081B2 (en) * 2012-12-27 2014-10-07 Intermolecular, Inc. High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
DE102013107240A1 (de) * 2013-07-09 2015-01-15 Institut Für Verbundwerkstoffe Gmbh Gemisch zur Herstellung von Nanopartikeln aus Siliziumdioxid, Verwendung eines solchen Gemisches, Verfahren zur Herstellung von Nanopartikeln aus Siliziumdioxid, Verwendung von nach dem Verfahren hergestellten Nanopartikeln aus Siliziumdioxid sowie nach dem Verfahren hergestellte Nanopartikel aus Siliziumdioxid
KR102207306B1 (ko) * 2016-11-25 2021-01-22 엔테그리스, 아이엔씨. 에칭 후 잔류물을 제거하기 위한 세정 조성물
JP6495230B2 (ja) * 2016-12-22 2019-04-03 花王株式会社 シリコンウェーハ用リンス剤組成物
KR102467591B1 (ko) * 2018-10-16 2022-11-16 쇼와 덴코 가부시키가이샤 조성물, 접착성 폴리머의 세정 방법, 디바이스 웨이퍼의 제조 방법, 및 지지 웨이퍼의 재생 방법
WO2020148968A1 (ja) * 2019-01-15 2020-07-23 昭和電工株式会社 分解洗浄組成物、接着性ポリマーの洗浄方法、及びデバイスウェハの製造方法
CN113430070A (zh) * 2020-03-23 2021-09-24 上海新阳半导体材料股份有限公司 一种CoWP兼容性的半水基清洗液、其制备方法及应用
CN113201743B (zh) * 2021-04-08 2022-06-21 浙江工业大学 一种适用于电子器件的除锈剂及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100234541B1 (ko) * 1997-03-07 1999-12-15 윤종용 반도체장치 제조용 웨이퍼의 세정을 위한 세정조성물 및 그를 이용한 세정방법
US7064070B2 (en) * 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
US6958123B2 (en) * 2001-06-15 2005-10-25 Reflectivity, Inc Method for removing a sacrificial material with a compressed fluid
US6764552B1 (en) * 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
CN1659481A (zh) * 2002-06-07 2005-08-24 马林克罗特贝克公司 包含氧化剂和有机溶剂的微电子清洁组合物
US20040011386A1 (en) * 2002-07-17 2004-01-22 Scp Global Technologies Inc. Composition and method for removing photoresist and/or resist residue using supercritical fluids
US6905556B1 (en) * 2002-07-23 2005-06-14 Novellus Systems, Inc. Method and apparatus for using surfactants in supercritical fluid processing of wafers
US7011716B2 (en) * 2003-04-29 2006-03-14 Advanced Technology Materials, Inc. Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
US7485611B2 (en) * 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US8017568B2 (en) * 2003-02-28 2011-09-13 Intel Corporation Cleaning residues from semiconductor structures

Also Published As

Publication number Publication date
WO2005093032A1 (en) 2005-10-06
CN1961065B (zh) 2011-01-26
CN1961065A (zh) 2007-05-09
ES2354077T3 (es) 2011-03-09
ATE488570T1 (de) 2010-12-15
ZA200607122B (en) 2008-09-25
US20090163396A1 (en) 2009-06-25
JP2007525851A (ja) 2007-09-06
SG150509A1 (en) 2009-03-30
PT1720966E (pt) 2010-12-21
DE602005024772D1 (de) 2010-12-30
US7767636B2 (en) 2010-08-03
KR101154692B1 (ko) 2012-06-08
IL177728A (en) 2011-08-31
TWI379174B (en) 2012-12-11
EP1720966A1 (en) 2006-11-15
CA2558069A1 (en) 2005-10-06
IL177728A0 (en) 2006-12-31
TW200534054A (en) 2005-10-16
NO20064349L (no) 2006-11-30
DK1720966T3 (da) 2011-02-28
KR20070003888A (ko) 2007-01-05
PL1720966T3 (pl) 2011-06-30
EP1720966B1 (en) 2010-11-17
JP4633785B2 (ja) 2011-02-16
MY146442A (en) 2012-08-15

Similar Documents

Publication Publication Date Title
BRPI0508291A (pt) composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza
de Souza et al. A DFT investigation on the structural and antioxidant properties of new isolated interglycosidic O-(1→ 3) linkage flavonols
ES2358256T8 (es) Composiciones microelectrónicas limpiadoras que contienen sal de fluoruro sin amoniaco.
JP6367842B2 (ja) フォトレジスト除去用ストリッパー組成物およびこれを用いたフォトレジストの剥離方法
US20130334679A1 (en) Metal conservation with stripper solutions containing resorcinol
BRPI0515810A (pt) composições não-aquosas, não-corrosivas para limpeza em microeletrÈnica
KR101668126B1 (ko) 포토레지스트 박리제 조성물 및 포토레지스트 박리 방법
Nakano et al. Electroless deposited cobalt-tungsten-boron capping barrier metal on damascene copper interconnection
TWI522752B (zh) 用於移除光阻之剝離劑組成物及使用其之光阻剝離方法
TW200710611A (en) Photoresist remover composition for removing modified photoresist of semiconductor device
Hossen et al. Theoretical investigations on the antioxidant potential of a non-phenolic compound thymoquinone: a DFT approach
TW200517796A (en) Stripping agent composition for a resist
KR101586453B1 (ko) 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
Dong et al. Solubilities of formononetin and daidzein in organic solvents: Effect of molecular structure and interaction on solvation process
US20160108271A1 (en) Silver nanoparticle inks comprising aminomethylsilanes
Kumar et al. Integrating experiments, DFT and characterization for comprehensive corrosion inhibition studies–a case for cinnamaldehyde as an excellent green inhibitor for steels in acidic media
JP6965144B2 (ja) 洗浄液及びこれを製造する方法
KR20180078159A (ko) 세정액, 방식제, 및 이들을 제조하는 방법
Yalkowsky et al. Upper II: Calculation of physical properties of the chlorobenzenes
JP6630183B2 (ja) リソグラフィー用洗浄液及び洗浄方法
de Oliveira Só et al. Combining electronic properties and virtual screening for the development of new antioxidants: Trolox‐like compounds as application example
JPWO2009038224A1 (ja) 置換ケトン化合物又はその誘導体を含有する防食剤或いは剥離剤、及びその製造方法
JP2010122287A (ja) フェニルジケトン誘導体を含有する防食剤又は剥離剤。
JP2010121148A (ja) ビアリール化合物を含有する防食剤又は剥離剤。
CN105734580A (zh) 一种硅系大分子复合缓蚀剂及其制备方法

Legal Events

Date Code Title Description
B25D Requested change of name of applicant approved

Owner name: AVANTOR PERFORMANCE MATERIALS, INC. (US)

Free format text: NOME ALTERADO DE: MALLINCKRODT BAKER, INC.

B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 9A ANUIDADE

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2282 DE 30/09/2014.