PL1720966T3 - Kompozycje do czyszczenia nanoelektroniki i mikroelektroniki - Google Patents
Kompozycje do czyszczenia nanoelektroniki i mikroelektronikiInfo
- Publication number
- PL1720966T3 PL1720966T3 PL05713349T PL05713349T PL1720966T3 PL 1720966 T3 PL1720966 T3 PL 1720966T3 PL 05713349 T PL05713349 T PL 05713349T PL 05713349 T PL05713349 T PL 05713349T PL 1720966 T3 PL1720966 T3 PL 1720966T3
- Authority
- PL
- Poland
- Prior art keywords
- nanoelectronic
- microelectronic
- cleaning compositions
- cleaning
- substrates
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title abstract 5
- 238000004377 microelectronic Methods 0.000 title abstract 5
- 239000000203 mixture Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 238000001465 metallisation Methods 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 240000008042 Zea mays Species 0.000 abstract 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 abstract 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 235000005822 corn Nutrition 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 239000011135 tin Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/395—Bleaching agents
- C11D3/3956—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C11D2111/22—
-
- C11D2111/40—
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54897704P | 2004-03-01 | 2004-03-01 | |
| EP05713349A EP1720966B1 (en) | 2004-03-01 | 2005-02-11 | Nanoelectronic and microelectronic cleaning compositions |
| PCT/US2005/004350 WO2005093032A1 (en) | 2004-03-01 | 2005-02-11 | Nanoelectronic and microelectronic cleaning compositions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL1720966T3 true PL1720966T3 (pl) | 2011-06-30 |
Family
ID=34960788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL05713349T PL1720966T3 (pl) | 2004-03-01 | 2005-02-11 | Kompozycje do czyszczenia nanoelektroniki i mikroelektroniki |
Country Status (20)
| Country | Link |
|---|---|
| US (1) | US7767636B2 (pl) |
| EP (1) | EP1720966B1 (pl) |
| JP (1) | JP4633785B2 (pl) |
| KR (1) | KR101154692B1 (pl) |
| CN (1) | CN1961065B (pl) |
| AT (1) | ATE488570T1 (pl) |
| BR (1) | BRPI0508291A (pl) |
| CA (1) | CA2558069A1 (pl) |
| DE (1) | DE602005024772D1 (pl) |
| DK (1) | DK1720966T3 (pl) |
| ES (1) | ES2354077T3 (pl) |
| IL (1) | IL177728A (pl) |
| MY (1) | MY146442A (pl) |
| NO (1) | NO20064349L (pl) |
| PL (1) | PL1720966T3 (pl) |
| PT (1) | PT1720966E (pl) |
| SG (1) | SG150509A1 (pl) |
| TW (1) | TWI379174B (pl) |
| WO (1) | WO2005093032A1 (pl) |
| ZA (1) | ZA200607122B (pl) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| WO2006056298A1 (en) * | 2004-11-25 | 2006-06-01 | Basf Aktiengesellschaft | Resist stripper and residue remover for cleaning copper surfaces in semiconductor processing |
| KR100675284B1 (ko) * | 2005-02-01 | 2007-01-26 | 삼성전자주식회사 | 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법 |
| US8044009B2 (en) * | 2005-04-04 | 2011-10-25 | Avantor Performance Materials, Inc. | Compositions for cleaning ion implanted photoresist in front end of line applications |
| KR101444468B1 (ko) | 2005-10-05 | 2014-10-30 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제 |
| US20070240740A1 (en) * | 2006-04-13 | 2007-10-18 | Mcdermott Wayne T | Cleaning of contaminated articles by aqueous supercritical oxidation |
| US7772128B2 (en) * | 2006-06-09 | 2010-08-10 | Lam Research Corporation | Semiconductor system with surface modification |
| PT2111445E (pt) * | 2007-02-14 | 2010-12-29 | Mallinckrodt Baker Inc | Formulações à base de oxometalato activadas por peróxido para a remoção de resíduos de gravação |
| KR101416103B1 (ko) * | 2007-11-12 | 2014-07-09 | (주)코미코 | 불순물 제거용 세정액 및 이를 이용한 불순물 제거방법 |
| CN101685274B (zh) * | 2008-09-26 | 2012-08-22 | 安集微电子（上海）有限公司 | 一种用于厚膜光刻胶的清洗剂 |
| JP5212827B2 (ja) * | 2009-02-04 | 2013-06-19 | 富士電機株式会社 | 磁気記録媒体の製造方法、及びこの方法により製造された磁気記録媒体 |
| WO2010091045A2 (en) * | 2009-02-05 | 2010-08-12 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of polymers and other organic material from a surface |
| WO2010099017A2 (en) * | 2009-02-25 | 2010-09-02 | Mallinckrodt Baker, Inc. | Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers |
| EP2401655B1 (en) * | 2009-02-25 | 2014-03-12 | Avantor Performance Materials, Inc. | Multipurpose acidic, organic solvent based microelectronic cleaning composition |
| EP2580303B1 (en) * | 2010-06-09 | 2018-08-29 | Basf Se | Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates |
| CN101912857B (zh) * | 2010-07-21 | 2011-12-14 | 河北工业大学 | 锑化铟晶片碱性化学机械抛光后的表面洁净方法 |
| JP5985156B2 (ja) * | 2011-04-04 | 2016-09-06 | 東京エレクトロン株式会社 | 半導体基板の超臨界乾燥方法及び装置 |
| EP2540800A1 (en) * | 2011-06-30 | 2013-01-02 | Solvay Sa | Process for etching using sulfur compounds |
| KR101999641B1 (ko) * | 2011-10-05 | 2019-07-12 | 아반토 퍼포먼스 머티리얼즈, 엘엘씨 | 구리/아졸 중합체 억제를 갖는 마이크로일렉트로닉 기판 세정 조성물 |
| KR101966635B1 (ko) * | 2012-04-27 | 2019-08-27 | 후지 필름 일렉트로닉 머트리얼즈 가부시키가이샤 | 반도체 기판용 세정제 및 반도체 기판 표면의 처리방법 |
| US9536730B2 (en) * | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
| US8853081B2 (en) * | 2012-12-27 | 2014-10-07 | Intermolecular, Inc. | High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures |
| DE102013107240A1 (de) * | 2013-07-09 | 2015-01-15 | Institut Für Verbundwerkstoffe Gmbh | Gemisch zur Herstellung von Nanopartikeln aus Siliziumdioxid, Verwendung eines solchen Gemisches, Verfahren zur Herstellung von Nanopartikeln aus Siliziumdioxid, Verwendung von nach dem Verfahren hergestellten Nanopartikeln aus Siliziumdioxid sowie nach dem Verfahren hergestellte Nanopartikel aus Siliziumdioxid |
| KR102207306B1 (ko) * | 2016-11-25 | 2021-01-22 | 엔테그리스, 아이엔씨. | 에칭 후 잔류물을 제거하기 위한 세정 조성물 |
| JP6495230B2 (ja) * | 2016-12-22 | 2019-04-03 | 花王株式会社 | シリコンウェーハ用リンス剤組成物 |
| CN112602174B (zh) * | 2018-10-16 | 2023-12-08 | 株式会社力森诺科 | 组合物、粘接性聚合物的清洗方法、器件晶圆的制造方法和支撑晶圆的再生方法 |
| KR102544429B1 (ko) * | 2019-01-15 | 2023-06-20 | 가부시끼가이샤 레조낙 | 분해세정 조성물, 접착성 폴리머의 세정 방법, 및 디바이스 웨이퍼의 제조 방법 |
| CN113430070A (zh) * | 2020-03-23 | 2021-09-24 | 上海新阳半导体材料股份有限公司 | 一种CoWP兼容性的半水基清洗液、其制备方法及应用 |
| CN113201743B (zh) * | 2021-04-08 | 2022-06-21 | 浙江工业大学 | 一种适用于电子器件的除锈剂及其制备方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100234541B1 (ko) * | 1997-03-07 | 1999-12-15 | 윤종용 | 반도체장치 제조용 웨이퍼의 세정을 위한 세정조성물 및 그를 이용한 세정방법 |
| US7064070B2 (en) * | 1998-09-28 | 2006-06-20 | Tokyo Electron Limited | Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process |
| US6958123B2 (en) * | 2001-06-15 | 2005-10-25 | Reflectivity, Inc | Method for removing a sacrificial material with a compressed fluid |
| US6764552B1 (en) * | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
| RS50930B (sr) * | 2002-06-07 | 2010-08-31 | Avantor Performance Materials Inc. | Kompozicije za mikroelektronsko čišćenje koje sadrže oksidatore i organske rastvarače |
| US20040011386A1 (en) * | 2002-07-17 | 2004-01-22 | Scp Global Technologies Inc. | Composition and method for removing photoresist and/or resist residue using supercritical fluids |
| US6905556B1 (en) * | 2002-07-23 | 2005-06-14 | Novellus Systems, Inc. | Method and apparatus for using surfactants in supercritical fluid processing of wafers |
| US7485611B2 (en) * | 2002-10-31 | 2009-02-03 | Advanced Technology Materials, Inc. | Supercritical fluid-based cleaning compositions and methods |
| US7011716B2 (en) * | 2003-04-29 | 2006-03-14 | Advanced Technology Materials, Inc. | Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products |
| US8017568B2 (en) * | 2003-02-28 | 2011-09-13 | Intel Corporation | Cleaning residues from semiconductor structures |
-
2005
- 2005-02-11 SG SG200900978-8A patent/SG150509A1/en unknown
- 2005-02-11 BR BRPI0508291-9A patent/BRPI0508291A/pt not_active IP Right Cessation
- 2005-02-11 AT AT05713349T patent/ATE488570T1/de active
- 2005-02-11 PT PT05713349T patent/PT1720966E/pt unknown
- 2005-02-11 CN CN2005800067053A patent/CN1961065B/zh not_active Expired - Fee Related
- 2005-02-11 PL PL05713349T patent/PL1720966T3/pl unknown
- 2005-02-11 DK DK05713349.8T patent/DK1720966T3/da active
- 2005-02-11 ES ES05713349T patent/ES2354077T3/es active Active
- 2005-02-11 EP EP05713349A patent/EP1720966B1/en not_active Not-in-force
- 2005-02-11 CA CA002558069A patent/CA2558069A1/en not_active Abandoned
- 2005-02-11 WO PCT/US2005/004350 patent/WO2005093032A1/en not_active Application Discontinuation
- 2005-02-11 US US10/584,827 patent/US7767636B2/en not_active Expired - Fee Related
- 2005-02-11 DE DE602005024772T patent/DE602005024772D1/de active Active
- 2005-02-11 JP JP2007501798A patent/JP4633785B2/ja not_active Expired - Fee Related
- 2005-02-25 MY MYPI20050746A patent/MY146442A/en unknown
- 2005-03-01 TW TW094106074A patent/TWI379174B/zh active
-
2006
- 2006-08-25 ZA ZA200607122A patent/ZA200607122B/xx unknown
- 2006-08-28 IL IL177728A patent/IL177728A/en active IP Right Grant
- 2006-08-31 KR KR1020067017617A patent/KR101154692B1/ko active IP Right Grant
- 2006-09-26 NO NO20064349A patent/NO20064349L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| ZA200607122B (en) | 2008-09-25 |
| EP1720966A1 (en) | 2006-11-15 |
| IL177728A0 (en) | 2006-12-31 |
| EP1720966B1 (en) | 2010-11-17 |
| WO2005093032A1 (en) | 2005-10-06 |
| DE602005024772D1 (de) | 2010-12-30 |
| TWI379174B (en) | 2012-12-11 |
| US20090163396A1 (en) | 2009-06-25 |
| PT1720966E (pt) | 2010-12-21 |
| TW200534054A (en) | 2005-10-16 |
| BRPI0508291A (pt) | 2007-07-31 |
| US7767636B2 (en) | 2010-08-03 |
| CA2558069A1 (en) | 2005-10-06 |
| JP2007525851A (ja) | 2007-09-06 |
| SG150509A1 (en) | 2009-03-30 |
| MY146442A (en) | 2012-08-15 |
| ES2354077T3 (es) | 2011-03-09 |
| JP4633785B2 (ja) | 2011-02-16 |
| ATE488570T1 (de) | 2010-12-15 |
| CN1961065A (zh) | 2007-05-09 |
| KR101154692B1 (ko) | 2012-06-08 |
| NO20064349L (no) | 2006-11-30 |
| KR20070003888A (ko) | 2007-01-05 |
| DK1720966T3 (da) | 2011-02-28 |
| IL177728A (en) | 2011-08-31 |
| CN1961065B (zh) | 2011-01-26 |
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