JP5985156B2 - 半導体基板の超臨界乾燥方法及び装置 - Google Patents
半導体基板の超臨界乾燥方法及び装置 Download PDFInfo
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- JP5985156B2 JP5985156B2 JP2011082753A JP2011082753A JP5985156B2 JP 5985156 B2 JP5985156 B2 JP 5985156B2 JP 2011082753 A JP2011082753 A JP 2011082753A JP 2011082753 A JP2011082753 A JP 2011082753A JP 5985156 B2 JP5985156 B2 JP 5985156B2
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- 239000004065 semiconductor Substances 0.000 title claims description 69
- 239000000758 substrate Substances 0.000 title claims description 66
- 238000000034 method Methods 0.000 title claims description 61
- 238000000352 supercritical drying Methods 0.000 title claims description 32
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 20
- 229910052721 tungsten Inorganic materials 0.000 claims description 20
- 239000010937 tungsten Substances 0.000 claims description 20
- 239000012530 fluid Substances 0.000 claims description 19
- 239000011261 inert gas Substances 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 12
- 238000007599 discharging Methods 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 195
- 238000005530 etching Methods 0.000 description 18
- 238000001035 drying Methods 0.000 description 16
- 239000012071 phase Substances 0.000 description 14
- 238000000354 decomposition reaction Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000007769 metal material Substances 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/02—Drying solid materials or objects by processes involving the application of heat by convection, i.e. heat being conveyed from a heat source to the materials or objects to be dried by a gas or vapour, e.g. air
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microbiology (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
11 チャンバ
12 ヒータ
13 ステージ
14 配管
15 バルブ
16 配管
17 バルブ
Claims (6)
- 薬液を用いて半導体基板を洗浄する工程と、
前記洗浄後に、純水を用いて前記半導体基板をリンスする工程と、
前記リンス後に、前記半導体基板の表面にアルコールを供給して、前記半導体基板の表面を覆う液体を純水から前記アルコールに置換する工程と、
SUSを含み、内壁面に電解研磨処理が施されたチャンバ内に、表面が前記アルコールで濡れた前記半導体基板を導入する工程と、
前記チャンバ内に不活性ガスを供給し、前記チャンバ内から酸素を排出する工程と、
酸素の排出後に、前記チャンバ内の温度を前記アルコールの臨界温度以上に昇温して、前記アルコールを超臨界状態にする工程と、
前記チャンバ内の圧力を下げ、超臨界状態の前記アルコールを気体に変化させて、前記チャンバから排出する工程と、
を備える半導体基板の超臨界乾燥方法。 - 前記不活性ガスの供給前に、前記アルコールの臨界温度、臨界圧力、及び前記チャンバの容量に基づく液量の前記アルコールを前記チャンバ内に供給する工程をさらに備えることを特徴とする請求項1に記載の半導体基板の超臨界乾燥方法。
- 前記半導体基板上にはタングステン又はモリブデンを含む金属膜が形成されていることを特徴とする請求項1又は2に記載の半導体基板の超臨界乾燥方法。
- SUSを含み、内壁面に電解研磨処理が施されたチャンバ内に、アルコールで濡れた半導体基板を導入し、
前記チャンバ内に不活性ガスを供給し、前記チャンバ内から酸素を排出し、
酸素の排出後に、前記チャンバ内の温度をアルコールの臨界温度以上に昇温して、アルコールを超臨界状態にし、
超臨界状態の前記アルコールを気体に変化させて、前記チャンバから排出すること、を備えた半導体基板の超臨界乾燥方法。 - 前記チャンバの内壁の表面部のクロム濃度は35%以上であることを特徴とする請求項4に記載の半導体基板の超臨界乾燥方法。
- SUSを含み、内壁の表面部に超臨界流体にさらされて膜厚7nm以上の酸化膜が設けられているチャンバ内にアルコールで濡れた半導体基板を導入し、
前記チャンバ内に不活性ガスを供給し、前記チャンバ内から酸素を排出し、
酸素の排出後に、前記チャンバ内の温度をアルコールの臨界温度以上に昇温して、アルコールを超臨界状態にし、
超臨界状態の前記アルコールを気体に変化させて、前記チャンバから排出することを含む、半導体基板の超臨界乾燥方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011082753A JP5985156B2 (ja) | 2011-04-04 | 2011-04-04 | 半導体基板の超臨界乾燥方法及び装置 |
US13/369,970 US8372212B2 (en) | 2011-04-04 | 2012-02-09 | Supercritical drying method and apparatus for semiconductor substrates |
TW101105149A TWI549169B (zh) | 2011-04-04 | 2012-02-16 | 半導體基板用超臨界乾燥方法及裝置 |
KR1020120021061A KR101422332B1 (ko) | 2011-04-04 | 2012-02-29 | 반도체 기판의 초임계 건조 방법 및 장치 |
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JP2011082753A JP5985156B2 (ja) | 2011-04-04 | 2011-04-04 | 半導体基板の超臨界乾燥方法及び装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012221986A JP2012221986A (ja) | 2012-11-12 |
JP5985156B2 true JP5985156B2 (ja) | 2016-09-06 |
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JP2011082753A Active JP5985156B2 (ja) | 2011-04-04 | 2011-04-04 | 半導体基板の超臨界乾燥方法及び装置 |
Country Status (4)
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US (1) | US8372212B2 (ja) |
JP (1) | JP5985156B2 (ja) |
KR (1) | KR101422332B1 (ja) |
TW (1) | TWI549169B (ja) |
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JP5620234B2 (ja) * | 2010-11-15 | 2014-11-05 | 株式会社東芝 | 半導体基板の超臨界乾燥方法および基板処理装置 |
CN106373906A (zh) * | 2015-07-20 | 2017-02-01 | 盛美半导体设备(上海)有限公司 | 半导体反应腔 |
TWI623968B (zh) * | 2015-09-30 | 2018-05-11 | 東京威力科創股份有限公司 | 使用液態二氧化碳以使半導體基板乾燥的方法及設備 |
CN108140542B (zh) | 2015-10-04 | 2022-10-18 | 应用材料公司 | 小热质量的加压腔室 |
KR102055712B1 (ko) | 2015-10-04 | 2019-12-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 감소된 용적의 처리 챔버 |
TWI767920B (zh) * | 2016-07-15 | 2022-06-21 | 美商應用材料股份有限公司 | 乾燥高深寬比特徵 |
KR102010264B1 (ko) * | 2016-10-10 | 2019-08-13 | 세메스 주식회사 | 기판 처리 장치, 그리고 이의 공정 유체 모니터링 장치 및 모니터링 방법 |
KR102030056B1 (ko) | 2017-05-02 | 2019-11-11 | 세메스 주식회사 | 챔버 세정 방법, 기판 처리 방법, 그리고 기판 처리 장치 |
KR102403268B1 (ko) * | 2017-06-15 | 2022-05-31 | 삼성전자주식회사 | 기판 건조 장치, 반도체 소자의 제조설비 및 그를 이용한 기판 건조 방법 |
CN109411391A (zh) * | 2018-09-29 | 2019-03-01 | 蚌埠市龙子湖区金力传感器厂 | 一种具有冷却功能的传感器单晶硅刻蚀装置 |
KR102292034B1 (ko) * | 2019-11-26 | 2021-08-23 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 장치의 처리 방법 |
CN112146359B (zh) * | 2020-09-25 | 2022-03-11 | 长江存储科技有限责任公司 | 干燥装置、干燥方法、清洗干燥系统及清洗干燥方法 |
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2012
- 2012-02-09 US US13/369,970 patent/US8372212B2/en active Active
- 2012-02-16 TW TW101105149A patent/TWI549169B/zh active
- 2012-02-29 KR KR1020120021061A patent/KR101422332B1/ko active IP Right Review Request
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Publication number | Publication date |
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JP2012221986A (ja) | 2012-11-12 |
KR101422332B1 (ko) | 2014-07-22 |
KR20120113181A (ko) | 2012-10-12 |
TWI549169B (zh) | 2016-09-11 |
US8372212B2 (en) | 2013-02-12 |
TW201241895A (en) | 2012-10-16 |
US20120247516A1 (en) | 2012-10-04 |
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