ATE488570T1 - Nanoelektronik- und mikroelektronik- reinigungsmittel - Google Patents

Nanoelektronik- und mikroelektronik- reinigungsmittel

Info

Publication number
ATE488570T1
ATE488570T1 AT05713349T AT05713349T ATE488570T1 AT E488570 T1 ATE488570 T1 AT E488570T1 AT 05713349 T AT05713349 T AT 05713349T AT 05713349 T AT05713349 T AT 05713349T AT E488570 T1 ATE488570 T1 AT E488570T1
Authority
AT
Austria
Prior art keywords
nanoelectronic
microelectronic
cleaning
substrates
nanoelectronics
Prior art date
Application number
AT05713349T
Other languages
English (en)
Inventor
Chien Pin Sherman Hsu
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Application granted granted Critical
Publication of ATE488570T1 publication Critical patent/ATE488570T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39Organic or inorganic per-compounds
    • C11D3/3947Liquid compositions
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/395Bleaching agents
    • C11D3/3956Liquid compositions
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/261Alcohols; Phenols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/34Organic compounds containing sulfur
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5009Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5013Organic solvents containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5022Organic solvents containing oxygen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/426Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40Specific cleaning or washing processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
AT05713349T 2004-03-01 2005-02-11 Nanoelektronik- und mikroelektronik- reinigungsmittel ATE488570T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54897704P 2004-03-01 2004-03-01
PCT/US2005/004350 WO2005093032A1 (en) 2004-03-01 2005-02-11 Nanoelectronic and microelectronic cleaning compositions

Publications (1)

Publication Number Publication Date
ATE488570T1 true ATE488570T1 (de) 2010-12-15

Family

ID=34960788

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05713349T ATE488570T1 (de) 2004-03-01 2005-02-11 Nanoelektronik- und mikroelektronik- reinigungsmittel

Country Status (20)

Country Link
US (1) US7767636B2 (de)
EP (1) EP1720966B1 (de)
JP (1) JP4633785B2 (de)
KR (1) KR101154692B1 (de)
CN (1) CN1961065B (de)
AT (1) ATE488570T1 (de)
BR (1) BRPI0508291A (de)
CA (1) CA2558069A1 (de)
DE (1) DE602005024772D1 (de)
DK (1) DK1720966T3 (de)
ES (1) ES2354077T3 (de)
IL (1) IL177728A (de)
MY (1) MY146442A (de)
NO (1) NO20064349L (de)
PL (1) PL1720966T3 (de)
PT (1) PT1720966E (de)
SG (1) SG150509A1 (de)
TW (1) TWI379174B (de)
WO (1) WO2005093032A1 (de)
ZA (1) ZA200607122B (de)

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WO2006056298A1 (en) * 2004-11-25 2006-06-01 Basf Aktiengesellschaft Resist stripper and residue remover for cleaning copper surfaces in semiconductor processing
KR100675284B1 (ko) * 2005-02-01 2007-01-26 삼성전자주식회사 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법
US8044009B2 (en) * 2005-04-04 2011-10-25 Avantor Performance Materials, Inc. Compositions for cleaning ion implanted photoresist in front end of line applications
KR101444468B1 (ko) * 2005-10-05 2014-10-30 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제
US20070240740A1 (en) * 2006-04-13 2007-10-18 Mcdermott Wayne T Cleaning of contaminated articles by aqueous supercritical oxidation
US7772128B2 (en) * 2006-06-09 2010-08-10 Lam Research Corporation Semiconductor system with surface modification
ATE483012T1 (de) * 2007-02-14 2010-10-15 Mallinckrodt Baker Inc Peroxid-aktivierte formulierungen auf oxometalat- basis zur entfernung von ätzungsresten
KR101416103B1 (ko) * 2007-11-12 2014-07-09 (주)코미코 불순물 제거용 세정액 및 이를 이용한 불순물 제거방법
CN101685274B (zh) * 2008-09-26 2012-08-22 安集微电子(上海)有限公司 一种用于厚膜光刻胶的清洗剂
JP5212827B2 (ja) * 2009-02-04 2013-06-19 富士電機株式会社 磁気記録媒体の製造方法、及びこの方法により製造された磁気記録媒体
WO2010091045A2 (en) * 2009-02-05 2010-08-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of polymers and other organic material from a surface
BRPI1008034A2 (pt) * 2009-02-25 2016-03-15 Avantor Performance Mat Inc composições removedoras para limpeza de fotorresistor implantado por íons de discos de silício de dispositivos semicondutores
SG173834A1 (en) * 2009-02-25 2011-09-29 Avantor Performance Mat Inc Multipurpose acidic, organic solvent based microelectronic cleaning composition
SG186108A1 (en) * 2010-06-09 2013-01-30 Basf Se Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
CN101912857B (zh) * 2010-07-21 2011-12-14 河北工业大学 锑化铟晶片碱性化学机械抛光后的表面洁净方法
JP5985156B2 (ja) * 2011-04-04 2016-09-06 東京エレクトロン株式会社 半導体基板の超臨界乾燥方法及び装置
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TWI589691B (zh) * 2012-04-27 2017-07-01 和光純藥工業股份有限公司 半導體基板用洗淨劑及半導體基板表面之處理方法
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
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DE102013107240A1 (de) * 2013-07-09 2015-01-15 Institut Für Verbundwerkstoffe Gmbh Gemisch zur Herstellung von Nanopartikeln aus Siliziumdioxid, Verwendung eines solchen Gemisches, Verfahren zur Herstellung von Nanopartikeln aus Siliziumdioxid, Verwendung von nach dem Verfahren hergestellten Nanopartikeln aus Siliziumdioxid sowie nach dem Verfahren hergestellte Nanopartikel aus Siliziumdioxid
WO2018098139A1 (en) * 2016-11-25 2018-05-31 Entegris, Inc. Cleaning compositions for removing post etch residue
JP6495230B2 (ja) * 2016-12-22 2019-04-03 花王株式会社 シリコンウェーハ用リンス剤組成物
CN112602174B (zh) * 2018-10-16 2023-12-08 株式会社力森诺科 组合物、粘接性聚合物的清洗方法、器件晶圆的制造方法和支撑晶圆的再生方法
CN113302269B (zh) * 2019-01-15 2023-08-01 株式会社力森诺科 分解清洗组合物、粘接性聚合物的清洗方法及器件晶圆的制造方法
CN113430070B (zh) * 2020-03-23 2024-08-23 上海新阳半导体材料股份有限公司 一种CoWP兼容性的半水基清洗液、其制备方法及应用
EP4196546A4 (de) * 2020-08-13 2024-08-28 Entegris, Inc. Nitridätzzusammensetzung und -verfahren
CN113201743B (zh) * 2021-04-08 2022-06-21 浙江工业大学 一种适用于电子器件的除锈剂及其制备方法
KR20220150134A (ko) * 2021-05-03 2022-11-10 삼성전자주식회사 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법
KR20250133658A (ko) * 2022-12-28 2025-09-08 가부시끼가이샤 도꾸야마 천이 금속용 산화제의 분해 억제제

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Also Published As

Publication number Publication date
PT1720966E (pt) 2010-12-21
BRPI0508291A (pt) 2007-07-31
SG150509A1 (en) 2009-03-30
EP1720966A1 (de) 2006-11-15
CA2558069A1 (en) 2005-10-06
EP1720966B1 (de) 2010-11-17
KR20070003888A (ko) 2007-01-05
CN1961065A (zh) 2007-05-09
CN1961065B (zh) 2011-01-26
KR101154692B1 (ko) 2012-06-08
US7767636B2 (en) 2010-08-03
IL177728A0 (en) 2006-12-31
ZA200607122B (en) 2008-09-25
WO2005093032A1 (en) 2005-10-06
DE602005024772D1 (de) 2010-12-30
JP4633785B2 (ja) 2011-02-16
NO20064349L (no) 2006-11-30
ES2354077T3 (es) 2011-03-09
MY146442A (en) 2012-08-15
IL177728A (en) 2011-08-31
DK1720966T3 (da) 2011-02-28
TWI379174B (en) 2012-12-11
PL1720966T3 (pl) 2011-06-30
JP2007525851A (ja) 2007-09-06
US20090163396A1 (en) 2009-06-25
TW200534054A (en) 2005-10-16

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