SG11201406961PA - Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface - Google Patents

Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface

Info

Publication number
SG11201406961PA
SG11201406961PA SG11201406961PA SG11201406961PA SG11201406961PA SG 11201406961P A SG11201406961P A SG 11201406961PA SG 11201406961P A SG11201406961P A SG 11201406961PA SG 11201406961P A SG11201406961P A SG 11201406961PA SG 11201406961P A SG11201406961P A SG 11201406961PA
Authority
SG
Singapore
Prior art keywords
substrate surface
cleaning agent
semiconductor substrate
processing
semiconductor substrates
Prior art date
Application number
SG11201406961PA
Inventor
Hiromi Kawada
Hironori Mizuta
Tsuneaki Maesawa
Original Assignee
Wako Pure Chem Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wako Pure Chem Ind Ltd filed Critical Wako Pure Chem Ind Ltd
Publication of SG11201406961PA publication Critical patent/SG11201406961PA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3218Alkanolamines or alkanolimines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/36Organic compounds containing phosphorus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684Smoothing; Planarisation
    • C11D2111/22
SG11201406961PA 2012-04-27 2013-04-26 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface SG11201406961PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012103921 2012-04-27
PCT/JP2013/062464 WO2013162020A1 (en) 2012-04-27 2013-04-26 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface

Publications (1)

Publication Number Publication Date
SG11201406961PA true SG11201406961PA (en) 2014-11-27

Family

ID=49483316

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201406961PA SG11201406961PA (en) 2012-04-27 2013-04-26 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
SG10201608964TA SG10201608964TA (en) 2012-04-27 2013-04-26 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201608964TA SG10201608964TA (en) 2012-04-27 2013-04-26 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface

Country Status (8)

Country Link
US (1) US9803161B2 (en)
EP (1) EP2843689A4 (en)
JP (1) JP6128118B2 (en)
KR (1) KR101966635B1 (en)
CN (1) CN104254906B (en)
SG (2) SG11201406961PA (en)
TW (1) TWI589691B (en)
WO (1) WO2013162020A1 (en)

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JP2015189829A (en) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド polishing composition
JP6436638B2 (en) * 2014-03-27 2018-12-12 株式会社フジミインコーポレーテッド Polishing composition
JP6373029B2 (en) * 2014-03-27 2018-08-15 株式会社フジミインコーポレーテッド Polishing composition
JP6343160B2 (en) * 2014-03-28 2018-06-13 株式会社フジミインコーポレーテッド Polishing composition
KR102360224B1 (en) * 2015-02-16 2022-03-14 삼성디스플레이 주식회사 Cleaning composition
WO2016170942A1 (en) 2015-04-22 2016-10-27 Jsr株式会社 Treatment composition for chemical mechanical polishing, chemical mechanical polishing method, and cleaning method
KR101654900B1 (en) * 2016-02-04 2016-09-07 주식회사 한국루베 Decontaminant composition
KR102341136B1 (en) * 2016-07-26 2021-12-21 가부시키가이샤 후지미인코퍼레이티드 Surface treatment composition and surface treatment method using the same
CN106283092B (en) * 2016-08-05 2018-06-19 宁波金特信钢铁科技有限公司 A kind of preparation method of no amino fluoride salt electric substrate cleaning combination
JP6791680B2 (en) 2016-08-09 2020-11-25 株式会社フジミインコーポレーテッド Surface treatment composition and cleaning method using it
JP6697362B2 (en) * 2016-09-23 2020-05-20 株式会社フジミインコーポレーテッド Surface treatment composition, surface treatment method using the same, and method for manufacturing semiconductor substrate
CN110178204B (en) * 2017-01-17 2022-11-04 株式会社大赛璐 Cleaning agent for semiconductor substrate
WO2018163617A1 (en) * 2017-03-08 2018-09-13 株式会社フジミインコーポレーテッド Surface treatment composition, production method therefor, surface treatment method, and production method for semiconductor substrate
JP7156266B2 (en) 2017-03-17 2022-10-19 三菱ケミカル株式会社 Cleaning composition for semiconductor device substrate, method for cleaning semiconductor device substrate, method for producing semiconductor device substrate, and semiconductor device substrate
JP6849564B2 (en) 2017-09-19 2021-03-24 株式会社フジミインコーポレーテッド Surface treatment composition and surface treatment method using the same
JP7028592B2 (en) 2017-09-19 2022-03-02 株式会社フジミインコーポレーテッド A surface treatment composition, a method for producing a surface treatment composition, a surface treatment method, and a method for producing a semiconductor substrate.
US11060051B2 (en) 2018-10-12 2021-07-13 Fujimi Incorporated Composition for rinsing or cleaning a surface with ceria particles adhered
CN110394694A (en) * 2019-07-26 2019-11-01 浙江天马轴承集团有限公司 A kind of plasma point discharge flash removed processing method
JP7220809B2 (en) * 2019-12-26 2023-02-10 富士フイルム株式会社 Cleaning liquid, cleaning method
JPWO2021210308A1 (en) * 2020-04-16 2021-10-21
CN113862088B (en) * 2021-10-27 2023-11-10 福建省佑达环保材料有限公司 Mask cleaning agent for OLED
WO2023182142A1 (en) * 2022-03-25 2023-09-28 富士フイルム株式会社 Composition, semiconductor-element manufacturing method, and semiconductor-substrate washing method

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Also Published As

Publication number Publication date
SG10201608964TA (en) 2016-12-29
TW201402806A (en) 2014-01-16
CN104254906B (en) 2017-07-21
KR20150003217A (en) 2015-01-08
KR101966635B1 (en) 2019-08-27
US20150140820A1 (en) 2015-05-21
EP2843689A4 (en) 2015-05-13
TWI589691B (en) 2017-07-01
US9803161B2 (en) 2017-10-31
EP2843689A1 (en) 2015-03-04
JP6128118B2 (en) 2017-05-17
CN104254906A (en) 2014-12-31
WO2013162020A1 (en) 2013-10-31
JPWO2013162020A1 (en) 2015-12-24

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