SG11201404015TA - Substrate etching method and substrate processing device - Google Patents

Substrate etching method and substrate processing device

Info

Publication number
SG11201404015TA
SG11201404015TA SG11201404015TA SG11201404015TA SG11201404015TA SG 11201404015T A SG11201404015T A SG 11201404015TA SG 11201404015T A SG11201404015T A SG 11201404015TA SG 11201404015T A SG11201404015T A SG 11201404015TA SG 11201404015T A SG11201404015T A SG 11201404015TA
Authority
SG
Singapore
Prior art keywords
substrate
processing device
etching method
substrate processing
substrate etching
Prior art date
Application number
SG11201404015TA
Inventor
Gang Wei
Chun Wang
Dongsan Li
Original Assignee
Beijing Nmc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co Ltd filed Critical Beijing Nmc Co Ltd
Publication of SG11201404015TA publication Critical patent/SG11201404015TA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00531—Dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00619—Forming high aspect ratio structures having deep steep walls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
    • B81C99/0025—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems not provided for in B81C99/001 - B81C99/002
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Drying Of Semiconductors (AREA)
SG11201404015TA 2011-12-19 2012-06-04 Substrate etching method and substrate processing device SG11201404015TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110424013.8A CN103159163B (en) 2011-12-19 2011-12-19 Substrate lithographic method and substrate processing equipment
PCT/CN2012/076427 WO2013091354A1 (en) 2011-12-19 2012-06-04 Substrate etching method and substrate processing device

Publications (1)

Publication Number Publication Date
SG11201404015TA true SG11201404015TA (en) 2014-10-30

Family

ID=48582747

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201404015TA SG11201404015TA (en) 2011-12-19 2012-06-04 Substrate etching method and substrate processing device

Country Status (6)

Country Link
US (1) US9187319B2 (en)
KR (1) KR101689448B1 (en)
CN (1) CN103159163B (en)
SG (1) SG11201404015TA (en)
TW (1) TWI458015B (en)
WO (1) WO2013091354A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140051256A1 (en) * 2012-08-15 2014-02-20 Lam Research Corporation Etch with mixed mode pulsing
CN104425237B (en) * 2013-08-20 2018-05-08 北京北方华创微电子装备有限公司 Substrate lithographic method
CN104637866B (en) * 2013-11-15 2018-01-05 中微半导体设备(上海)有限公司 Silicon hole lithographic method
CN104637867B (en) * 2013-11-15 2017-11-10 中微半导体设备(上海)有限公司 Silicon hole lithographic method
CN103693614B (en) * 2013-12-30 2015-12-30 中国电子科技集团公司第四十九研究所 The manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure
KR102620219B1 (en) 2018-11-02 2024-01-02 삼성전자주식회사 Substrate processing method and substrate processing apparatus
CN112951693B (en) * 2021-02-09 2024-01-05 北京北方华创微电子装备有限公司 Semiconductor etching apparatus and etching method
KR20230004014A (en) 2021-06-30 2023-01-06 삼성전자주식회사 Method of manufacturing semiconductor device
WO2023048281A1 (en) * 2021-09-27 2023-03-30 東京エレクトロン株式会社 Plasma processing method and plasma processing system

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
JP2918892B2 (en) * 1988-10-14 1999-07-12 株式会社日立製作所 Plasma etching method
EP0822582B1 (en) * 1996-08-01 2003-10-01 Surface Technology Systems Plc Method of etching substrates
US6133153A (en) * 1998-03-30 2000-10-17 Lam Research Corporation Self-aligned contacts for semiconductor device
US6383938B2 (en) * 1999-04-21 2002-05-07 Alcatel Method of anisotropic etching of substrates
US20020039818A1 (en) * 2000-01-25 2002-04-04 Lee Szetsen Steven Wavy-shaped deep trench and method of forming
US7744735B2 (en) * 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench
JP4065213B2 (en) * 2003-03-25 2008-03-19 住友精密工業株式会社 Silicon substrate etching method and etching apparatus
US20050211668A1 (en) * 2004-03-26 2005-09-29 Lam Research Corporation Methods of processing a substrate with minimal scalloping
CN100517596C (en) * 2004-06-29 2009-07-22 优利讯美国有限公司 Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes
US20090272717A1 (en) * 2008-03-21 2009-11-05 Applied Materials, Inc. Method and apparatus of a substrate etching system and process
US9039908B2 (en) 2008-08-27 2015-05-26 Applied Materials, Inc. Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched features
US9018098B2 (en) * 2008-10-23 2015-04-28 Lam Research Corporation Silicon etch with passivation using chemical vapor deposition
CN101777485B (en) * 2009-01-12 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 Etching method
CN101958244A (en) * 2009-07-21 2011-01-26 中微半导体设备(上海)有限公司 Deep reactive ion etching method and gas flow control device thereof
CN101988197B (en) * 2009-08-03 2013-06-05 北京北方微电子基地设备工艺研究中心有限责任公司 Deep silicon etching method, plasma processing method and system
CN101988196B (en) * 2009-08-07 2013-09-04 中微半导体设备(上海)有限公司 Deep reactive ion etching method and gas-flow control device thereof

Also Published As

Publication number Publication date
US20140363975A1 (en) 2014-12-11
US9187319B2 (en) 2015-11-17
KR20140105581A (en) 2014-09-01
TW201327663A (en) 2013-07-01
TWI458015B (en) 2014-10-21
WO2013091354A1 (en) 2013-06-27
CN103159163B (en) 2016-06-08
KR101689448B1 (en) 2017-01-02
CN103159163A (en) 2013-06-19

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