CN103693614B - The manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure - Google Patents
The manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure Download PDFInfo
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- CN103693614B CN103693614B CN201310744570.7A CN201310744570A CN103693614B CN 103693614 B CN103693614 B CN 103693614B CN 201310744570 A CN201310744570 A CN 201310744570A CN 103693614 B CN103693614 B CN 103693614B
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Abstract
The manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure, it relates to a kind of manufacture method of overload-resistant structure micro-pressure sensor.The present invention obtains to solve existing method the technical problem that stress unification structure has processed complex.This method is as follows: one, once oxidation; Two, boron is noted; Three, photoetching; Four, highly doped silicon is etched; Five, secondary oxidation; Six, front photoetching; Seven, front dry etching; Eight, evaporation of aluminum; Nine, back side photoetching; Ten, back side dry etching; 11, electrostatic sealing-in; 12, be separated.The present invention adopts the dry etch process of alternately etching, passivation, and arc structure is produced in the angular region of concentrating at stress, reduces angular region stress.The method has saving graphics area, processes simple, that transducer range easily adjusts, can process arbitrary shape film feature.The invention belongs to the manufacture field of overload-resistant micro-pressure sensor.
Description
Technical field
The present invention relates to a kind of manufacture method of overload-resistant structure micro-pressure sensor.
Background technology
Existing silicon micro-pressure sensor mainly adopts the method tonnage sensitive structure by anisotropic etch, because micro-pressure sensor needs the requirement considering output linearity and sensitivity, design beam-film-island structure is needed to concentrate to make stress, and need the very thin sensitivity higher with the change of responsive slight pressure acquisition of pressure sensitive film, this just brings the not all right problem of micro-pressure sensor anti-overload ability.According to mechanics principle, there is stress concentration effect in angular region, make silicon fiml after front or back side pressurized, angular region can have the extreme value of stress, therefore breaks and first occurs from this.After introducing stress unification structure, angular region is become have the fillet district of certain curvature, the maximum stress in Shi Gai district declines.The gradual structure of certain curvature half warp to be formed at silicon fiml and frame or the intersection of carrying on the back island, adopt general conventional anisotropic wet etching to realize.For this reason, have employed mask-maskless anisotropic wet corrosion technology, its structure is the stress unification structure on two sections of slopes, employing mask-and without mask anisotropic corrosion technique, there is processed complex, the shortcoming that transducer range not easily adjusts.
Summary of the invention
The object of the invention is to obtain stress unification structure to solve existing method there is the technical problem that processed complex not easily adjusts, provide the manufacture method of the overload-resistant micro-pressure sensor of a kind of circular arc stress unification structure.
The manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure is as follows:
One, SOI wafer is put into oxidation furnace to be oxidized, form oxide layer on SOI wafer surface;
Two, the SOI wafer processed through step one being put into ion implantation apparatus, is 2 × 10 at an implantation concentration of SOI wafer
20cm
-3, energy is the dense boron of 80kev;
Three, photoetching: the resist coating injecting dense boron in SOI wafer, then adopts litho machine to carry out photoetching;
Four, highly doped silicon is etched: adopt etching machine to etch the one side that the SOI wafer through step 3 process injects dense boron;
Five, secondary oxidation: the SOI wafer through step 4 process is put into oxidation furnace and is oxidized;
Six, front photoetching: resist coating SOI wafer being injected dense boron, then adopts litho machine to carry out photoetching;
Seven, front dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 300sccm, C
4f
8flow is 150sccm, upper electrode power is 1200W, lower electrode power is 80W, pressure is the one side that the SOI wafer etched under the condition of 5Pa through step 6 process injects dense boron, after etching terminates, removing aluminium or photoresist, removing SOI wafer does not inject the oxide layer of the one side of dense boron;
Eight, evaporation of aluminum: use evaporator to be the aluminium of 3000 dusts at the deposit thickness that SOI wafer does not inject dense boron;
Nine, back side photoetching: photoresist is coated in the one side that SOI wafer does not inject dense boron, adopts litho machine photoetching through the aluminium lamination not injecting the one side of dense boron in SOI wafer of step 8 process, removes remaining aluminium lamination;
Ten, back side dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 400sccm, C
4f
8flow is 150sccm, upper electrode power is 1500W, lower electrode power is 80W, pressure is the one side that the SOI wafer etched under the condition of 5Pa through step 9 process does not inject dense boron;
11, electrostatic sealing-in: adopt bonder by sheet glass with through step 10 process SOI wafer bonding temperature be 360 DEG C, bonding voltage is 1500V, bonding pressure be the condition of 1000N under bonding 15min, obtain the disk that electrostatic sealing-in is good;
12, be separated: the disk that electrostatic sealing-in step 11 obtained is good is separated into single chip, obtains the overload-resistant micro-pressure sensor of circular arc stress unification structure.
The manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure is as follows:
One, monocrystalline silicon is put into oxidation furnace to be oxidized, form oxide layer at monocrystalline silicon surface;
Two, the monocrystalline silicon processed through step one being put into ion implantation apparatus, is 2 × 10 at an implantation concentration of monocrystalline silicon
20cm
-3, energy is the dense boron of 80kev;
Three, photoetching: the resist coating injecting dense boron at monocrystalline silicon, then adopts litho machine to carry out photoetching;
Four, highly doped silicon is etched: adopt etching machine to etch the one side that the monocrystalline silicon through step 3 process injects dense boron;
Five, secondary oxidation: the monocrystalline silicon through step 4 process is put into oxidation furnace and is oxidized;
Six, front photoetching: resist coating monocrystalline silicon being injected dense boron, then adopts litho machine to carry out photoetching;
Seven, front dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 300sccm, C
4f
8flow is 150sccm, upper electrode power is 1200W, lower electrode power is 80W, pressure is the one side that the monocrystalline silicon etched under the condition of 5Pa through step 6 process injects dense boron, after etching terminates, removing aluminium or photoresist, removing monocrystalline silicon does not inject the oxide layer of the one side of dense boron;
Eight, evaporation of aluminum: use evaporator to be the aluminium of 3000 dusts at the deposit thickness that monocrystalline silicon does not inject dense boron;
Nine, back side photoetching: photoresist is coated in the one side that monocrystalline silicon does not inject dense boron, adopts litho machine photoetching through the aluminium lamination not injecting the one side of dense boron at monocrystalline silicon of step 8 process, removes remaining aluminium lamination;
Ten, back side dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 400sccm, C
4f
8flow is 150sccm, upper electrode power is 1500W, lower electrode power is 80W, pressure is the one side that the monocrystalline silicon etched under the condition of 5Pa through step 9 process does not inject dense boron;
11, electrostatic sealing-in: adopt bonder by sheet glass with through step 10 process monocrystalline silicon bonding temperature be 360 DEG C, bonding voltage is 1500V, bonding pressure be the condition of 1000N under bonding 15min, obtain the disk that electrostatic sealing-in is good;
12, be separated: the disk that electrostatic sealing-in step 11 obtained is good is separated into single chip, obtains the overload-resistant micro-pressure sensor of circular arc stress unification structure.
Described SOI wafer or monocrystalline silicon are P-type silicon.
Described photoresist model is photoresist AZ1500.
The method removing aluminium in step 7 is as follows: temperature be 80 DEG C, concentration is corrode aluminium in the SPA of 80%; The method removing photoresist in step 7 is as follows: in acetone, dissolve photoresist.
The method removing remaining aluminium lamination in step 9 is as follows: temperature be 80 DEG C, concentration is corrode aluminium lamination in the SPA of 80%.
The principle of dry process Machining Arc shape stress unification structure: the micro-pressure sensor deep etching that carries out on a silicon substrate uses dry etch process, it is made up of a series of etching of replacing and deposition step.Process gas SF
6be used to realize the high-rate etching of silicon and the high selectivity of mask, but there is the characteristic of isotropic etching.In deposition step, process gas C
4f
8be used to deposit anti-etching polymer under all exposed surfaces, each tropism deposits formation passivation layer.Before next step etch step, polymer is anisotropically removed (sidewall still has polymer to protect) bottom deep structure, and like this so that in structure etching process, sidewall can prevent lateral etches and be protected.So, approximately perpendicular etching section is obtained by a series of isotropic etching and deposition.
In silicon of high aspect ratio etching process, ion is main etching agent, their direction of motion determines the type looks of the structure that is etched, after etching structure reaches certain depth, the internal field formed by micro-structural will have an impact to the movement locus of ion, make the direction of motion of the ion deflection of close microstructure side wall in biasing electric field, be deflected the sidewall of structure, can not directly at the bottom of arrival slot.For the larger structure of etching area, depart from although the ion motion trace of adjacent sidewalls there occurs, most of ion still at the bottom of arrival slot, can not affect the etch rate of sipes bottom surface.By the substrate bias power in adjusting process condition, reaction pressure these affect the parameter of ion motion, make the location deflection that the ion near sidewall is being expected, process the overload-resistant structure of arc-shaped, the ion away from sidewall is unaffected, processes the sensitive beam membrane structure of micro-pressure sensor.
Shown to there is stress concentration effect in sharp-pointed angular region by mechanical analysis, the intensity of stress is relevant with the radius of curvature of angular region, and the increase of radius of curvature can make maximum stress decline, thus the withstand voltage degree of device is improved rapidly.Arc structure is produced in the angular region of concentrating at stress, angular region stress can be reduced, emulated by FEM-software ANSYS, the inventive method can reduce the maximum stress of about 60%, for the micro-pressure sensor chip of 5kPa range, overload capacity can be brought up to 20 times (i.e. 100kPa) from current 5 times.
Adopt the method for dry etching, the micro-pressure sensor with high overload-resistant circular arc stress unification structure can be processed, its advantage is that stress unification overload structure realizes by adjusting process parameter, the range of sensor can adjust by changing pressure sensitive film thickness in process, the method can process the back side reference cavity of arbitrary shape simultaneously, be not limited to circle, the regular shapes such as rectangle (adopting the structure that the traditional handicrafts such as wet etching must adopt), make design variation, the method need not consider that wet etching slope takies the problem of graphics area and convex corner compensation, and then reduce sensor chip size, simplify design cycle.
The present invention adopts the dry etch process of alternately etching, passivation, and arc structure is produced in the angular region of concentrating at stress, reduces angular region stress.The method has saving graphics area, processes simple, that transducer range easily adjusts, can process arbitrary shape film feature.
Accompanying drawing explanation
Fig. 1 is the overload-resistant structural representation of wet corrosion technique processing, and in figure, a represents stress unification structure;
Fig. 2 is the overload-resistant structural representation of the overload-resistant micro-pressure sensor of the inventive method circular arc stress unification structure, and in figure, b represents stress unification structure;
Fig. 3 is the structural representation preparing the overload-resistant micro-pressure sensor of circular arc stress unification structure in experiment one.
Detailed description of the invention
Technical solution of the present invention is not limited to following cited detailed description of the invention, also comprises any combination between each detailed description of the invention.
Detailed description of the invention one: the manufacture method of the overload-resistant micro-pressure sensor of present embodiment circular arc stress unification structure is as follows:
One, SOI wafer is put into oxidation furnace to be oxidized, form oxide layer on SOI wafer surface;
Two, the SOI wafer processed through step one being put into ion implantation apparatus, is 2 × 10 at an implantation concentration of SOI wafer
20cm
-3, energy is the dense boron of 80kev;
Three, photoetching: the resist coating injecting dense boron in SOI wafer, then adopts litho machine to carry out photoetching;
Four, highly doped silicon is etched: adopt etching machine to etch the one side that the SOI wafer through step 3 process injects dense boron;
Five, secondary oxidation: the SOI wafer through step 4 process is put into oxidation furnace and is oxidized;
Six, front photoetching: resist coating SOI wafer being injected dense boron, then adopts litho machine to carry out photoetching;
Seven, front dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 300sccm, C
4f
8flow is 150sccm, upper electrode power is 1200W, lower electrode power is 80W, pressure is the one side that the SOI wafer etched under the condition of 5Pa through step 6 process injects dense boron, after etching terminates, removing aluminium or photoresist, removing SOI wafer does not inject the oxide layer of the one side of dense boron;
Eight, evaporation of aluminum: use evaporator to be the aluminium of 3000 dusts at the deposit thickness that SOI wafer does not inject dense boron;
Nine, back side photoetching: photoresist is coated in the one side that SOI wafer does not inject dense boron, adopts litho machine photoetching through the aluminium lamination not injecting the one side of dense boron in SOI wafer of step 8 process, removes remaining aluminium lamination;
Ten, back side dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 400sccm, C
4f
8flow is 150sccm, upper electrode power is 1500W, lower electrode power is 80W, pressure is the one side that the SOI wafer etched under the condition of 5Pa through step 9 process does not inject dense boron;
11, electrostatic sealing-in: adopt bonder by sheet glass with through step 10 process SOI wafer bonding temperature be 360 DEG C, bonding voltage is 1500V, bonding pressure be the condition of 1000N under bonding 15min, obtain the disk that electrostatic sealing-in is good;
12, be separated: the disk that electrostatic sealing-in step 11 obtained is good is separated into single chip, obtains the overload-resistant micro-pressure sensor of circular arc stress unification structure.
Detailed description of the invention two: present embodiment and detailed description of the invention one are P-type silicon unlike the SOI wafer described in step one.Other is identical with detailed description of the invention one.
Detailed description of the invention three: one of present embodiment and detailed description of the invention one or two are photoresist AZ1500 unlike the photoresist model described in step 3, step 6, step 7, step 9 and step 10.Other is not identical with one of detailed description of the invention one or two.
Detailed description of the invention four: one of present embodiment and detailed description of the invention one to three are as follows unlike the method removing aluminium in step 7: temperature be 80 DEG C, concentration is corrode aluminium in the SPA of 80%; The method removing photoresist in step 7 is as follows: in acetone, dissolve photoresist.Other is identical with one of detailed description of the invention one to three.
Detailed description of the invention five: one of present embodiment and detailed description of the invention one to four are as follows unlike the method removing remaining aluminium lamination in step 9: temperature be 80 DEG C, concentration is corrode aluminium lamination in the SPA of 80%.Other is identical with one of detailed description of the invention one to four.
Detailed description of the invention six: the manufacture method of the overload-resistant micro-pressure sensor of present embodiment circular arc stress unification structure is as follows:
One, monocrystalline silicon is put into oxidation furnace to be oxidized, form oxide layer at monocrystalline silicon surface;
Two, the monocrystalline silicon processed through step one being put into ion implantation apparatus, is 2 × 10 at an implantation concentration of monocrystalline silicon
20cm
-3, energy is the dense boron of 80kev;
Three, photoetching: the resist coating injecting dense boron at monocrystalline silicon, then adopts litho machine to carry out photoetching;
Four, highly doped silicon is etched: adopt etching machine to etch the one side that the monocrystalline silicon through step 3 process injects dense boron;
Five, secondary oxidation: the monocrystalline silicon through step 4 process is put into oxidation furnace and is oxidized;
Six, front photoetching: resist coating monocrystalline silicon being injected dense boron, then adopts litho machine to carry out photoetching;
Seven, front dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 300sccm, C
4f
8flow is 150sccm, upper electrode power is 1200W, lower electrode power is 80W, pressure is the one side that the monocrystalline silicon etched under the condition of 5Pa through step 6 process injects dense boron, after etching terminates, removing aluminium or photoresist, removing monocrystalline silicon does not inject the oxide layer of the one side of dense boron;
Eight, evaporation of aluminum: use evaporator to be the aluminium of 3000 dusts at the deposit thickness that monocrystalline silicon does not inject dense boron;
Nine, back side photoetching: photoresist is coated in the one side that monocrystalline silicon does not inject dense boron, adopts litho machine photoetching through the aluminium lamination not injecting the one side of dense boron at monocrystalline silicon of step 8 process, removes remaining aluminium lamination;
Ten, back side dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 400sccm, C
4f
8flow is 150sccm, upper electrode power is 1500W, lower electrode power is 80W, pressure is the one side that the monocrystalline silicon etched under the condition of 5Pa through step 9 process does not inject dense boron;
11, electrostatic sealing-in: adopt bonder by sheet glass with through step 10 process monocrystalline silicon bonding temperature be 360 DEG C, bonding voltage is 1500V, bonding pressure be the condition of 1000N under bonding 15min, obtain the disk that electrostatic sealing-in is good;
12, be separated: the disk that electrostatic sealing-in step 11 obtained is good is separated into single chip, obtains the overload-resistant micro-pressure sensor of circular arc stress unification structure.
Detailed description of the invention seven: present embodiment and detailed description of the invention six are P-type silicon unlike the monocrystalline silicon described in step one.Other is identical with detailed description of the invention six.
Detailed description of the invention eight: one of present embodiment and detailed description of the invention six or seven are photoresist AZ1500 unlike the photoresist model described in step 3, step 6, step 7, step 9 and step 10.Other is not identical with one of detailed description of the invention six or seven.
Detailed description of the invention nine: one of present embodiment and detailed description of the invention six to eight are as follows unlike the method removing aluminium in step 7: temperature be 80 DEG C, concentration is corrode aluminium in the SPA of 80%; The method removing photoresist in step 7 is as follows: in acetone, dissolve photoresist.Other is identical with one of detailed description of the invention six to eight.
Detailed description of the invention ten: one of present embodiment and detailed description of the invention six to nine are as follows unlike the method removing remaining aluminium lamination in step 9: temperature be 80 DEG C, concentration is corrode aluminium lamination in the SPA of 80%.Other is identical with one of detailed description of the invention six to nine.
Adopt following experimental verification effect of the present invention:
Experiment one:
Composition graphs 3, the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure is as follows:
One, monocrystalline silicon is put into L4514-3/QXG type oxidation furnace to be oxidized, oxidizing temperature is 1050 DEG C, forms oxide layer, oxidated layer thickness 50nm at monocrystalline silicon surface;
Two, the monocrystalline silicon processed through step one being put into ion implantation apparatus, is 2 × 10 at an implantation concentration of monocrystalline silicon
20cm
-3, energy is the dense boron of 80kev;
Three, photoetching: the resist coating injecting dense boron at monocrystalline silicon, then adopts EVG-620 litho machine to carry out photoetching;
Four, highly doped silicon (oxide layer device layer highly doped silicon etching thoroughly do not damaged below should be ensured in etching) is etched: the one side adopting PHANTOM II type etching machine to inject dense boron to the monocrystalline silicon through step 3 process etches (technological parameter: SF6 gas flow: 50sccm, pressure: 5Pa, power: 100W, etch period 1min), form the first groove 4, second groove 5;
Five, secondary oxidation: the monocrystalline silicon through step 4 process is put into L4514-3/QXG type oxidation furnace and be oxidized, oxidizing temperature is 1050 DEG C, and oxidated layer thickness is 200nm ~ 250nm;
Six, front photoetching: resist coating monocrystalline silicon being injected dense boron, then adopts litho machine to carry out photoetching and forms the 3rd groove 3;
Seven, front dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 300sccm, C
4f
8flow is 150sccm, upper electrode power is 1200W, lower electrode power is 80W, pressure is the one side that the monocrystalline silicon etched under the condition of 5Pa through step 6 process injects dense boron, after etching terminates, removing aluminium or photoresist, the oxide layer of the one side of dense boron is not injected, the 3rd groove 3, first sensitive resistance 2-1 of Formation Depth 10 microns, the second sensitive resistance 2-2, the 3rd sensitive resistance 2-3 and the 4th sensitive resistance 2-4 with hydrofluoric acid removing monocrystalline silicon;
Eight, evaporation of aluminum: use DM-450C evaporator to be the aluminium of 3000 dusts at the deposit thickness that monocrystalline silicon does not inject dense boron;
Nine, back side photoetching: photoresist is coated in the one side that monocrystalline silicon does not inject dense boron, adopts litho machine photoetching through the aluminium lamination not injecting the one side of dense boron at monocrystalline silicon of step 8 process, removes remaining aluminium lamination;
Ten, back side dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 400sccm, C
4f
8flow is 150sccm, upper electrode power is 1500W, lower electrode power is 80W, pressure is the one side that the monocrystalline silicon etched under the condition of 5Pa through step 9 process does not inject dense boron, forms the 4th groove 6 (degree of depth is 370 microns), the 5th groove 7 (degree of depth is 370 microns), the first circular arc stress unification structure 1-1, the second circular arc stress unification structure 1-2, three-arc stress unification structure 1-3 and the 4th circular arc stress unification structure 1-4;
11, electrostatic sealing-in: adopt EVG-501 bonder by sheet glass with through step 10 process monocrystalline silicon bonding temperature be 360 DEG C, bonding voltage is 1500V, bonding pressure be the condition of 1000N under bonding 15min, obtain the disk that electrostatic sealing-in is good;
12, be separated: the disk HP-602A scribing machine that electrostatic sealing-in step 11 obtained is good is separated into single chip, obtains the overload-resistant micro-pressure sensor of circular arc stress unification structure.
Claims (10)
1. the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure, is characterized in that the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure is as follows:
One, SOI wafer is put into oxidation furnace to be oxidized, form oxide layer on SOI wafer surface;
Two, the SOI wafer processed through step one being put into ion implantation apparatus, is 2 × 10 at an implantation concentration of SOI wafer
20cm
-3, energy is the dense boron of 80kev;
Three, photoetching: the resist coating injecting dense boron in SOI wafer, then adopts litho machine to carry out photoetching;
Four, highly doped silicon is etched: adopt etching machine to etch the one side that the SOI wafer through step 3 process injects dense boron;
Five, secondary oxidation: the SOI wafer through step 4 process is put into oxidation furnace and is oxidized;
Six, front photoetching: resist coating SOI wafer being injected dense boron, then adopts litho machine to carry out photoetching;
Seven, front dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 300sccm, C
4f
8flow is 150sccm, upper electrode power is 1200W, lower electrode power is 80W, pressure is the one side that the SOI wafer etched under the condition of 5Pa through step 6 process injects dense boron, after etching terminates, removing aluminium or photoresist, removing SOI wafer does not inject the oxide layer of the one side of dense boron;
Eight, evaporation of aluminum: use evaporator to be the aluminium of 3000 dusts at the deposit thickness that SOI wafer does not inject dense boron;
Nine, back side photoetching: photoresist is coated in the one side that SOI wafer does not inject dense boron, adopts litho machine photoetching through the aluminium lamination not injecting the one side of dense boron in SOI wafer of step 8 process, removes remaining aluminium lamination;
Ten, back side dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 400sccm, C
4f
8flow is 150sccm, upper electrode power is 1500W, lower electrode power is 80W, pressure is the one side that the SOI wafer etched under the condition of 5Pa through step 9 process does not inject dense boron;
11, electrostatic sealing-in: adopt bonder by sheet glass with through step 10 process SOI wafer bonding temperature be 360 DEG C, bonding voltage is 1500V, bonding pressure be the condition of 1000N under bonding 15min, obtain the disk that electrostatic sealing-in is good;
12, be separated: the disk that electrostatic sealing-in step 11 obtained is good is separated into single chip, obtains the overload-resistant micro-pressure sensor of circular arc stress unification structure.
2. the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure according to claim 1, is characterized in that the SOI wafer described in step one is P-type silicon.
3. the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure according to claim 1 or 2, is characterized in that the photoresist model described in step 3, step 6, step 7, step 9 and step 10 is photoresist AZ1500.
4. the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure according to claim 1 or 2, is characterized in that the method removing aluminium in step 7 is as follows: temperature be 80 DEG C, concentration is corrode aluminium in the SPA of 80%; The method removing photoresist in step 7 is as follows: in acetone, dissolve photoresist.
5. the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure according to claim 1 or 2, is characterized in that the method removing remaining aluminium lamination in step 9 is as follows: temperature be 80 DEG C, concentration is corrode aluminium lamination in the SPA of 80%.
6. the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure, is characterized in that the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure is as follows:
One, monocrystalline silicon is put into oxidation furnace to be oxidized, form oxide layer at monocrystalline silicon surface;
Two, the monocrystalline silicon processed through step one being put into ion implantation apparatus, is 2 × 10 at an implantation concentration of monocrystalline silicon
20cm
-3, energy is the dense boron of 80kev;
Three, photoetching: the resist coating injecting dense boron at monocrystalline silicon, then adopts litho machine to carry out photoetching;
Four, highly doped silicon is etched: adopt etching machine to etch the one side that the monocrystalline silicon through step 3 process injects dense boron;
Five, secondary oxidation: the monocrystalline silicon through step 4 process is put into oxidation furnace and is oxidized;
Six, front photoetching: resist coating monocrystalline silicon being injected dense boron, then adopts litho machine to carry out photoetching;
Seven, front dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 300sccm, C
4f
8flow is 150sccm, upper electrode power is 1200W, lower electrode power is 80W, pressure is the one side that the monocrystalline silicon etched under the condition of 5Pa through step 6 process injects dense boron, after etching terminates, removing aluminium or photoresist, removing monocrystalline silicon does not inject the oxide layer of the one side of dense boron;
Eight, evaporation of aluminum: use evaporator to be the aluminium of 3000 dusts at the deposit thickness that monocrystalline silicon does not inject dense boron;
Nine, back side photoetching: photoresist is coated in the one side that monocrystalline silicon does not inject dense boron, adopts litho machine photoetching through the aluminium lamination not injecting the one side of dense boron at monocrystalline silicon of step 8 process, removes remaining aluminium lamination;
Ten, back side dry etching: adopt aluminium or photoresist as mask, at SF
6flow is 400sccm, C
4f
8flow is 150sccm, upper electrode power is 1500W, lower electrode power is 80W, pressure is the one side that the monocrystalline silicon etched under the condition of 5Pa through step 9 process does not inject dense boron;
11, electrostatic sealing-in: adopt bonder by sheet glass with through step 10 process monocrystalline silicon bonding temperature be 360 DEG C, bonding voltage is 1500V, bonding pressure be the condition of 1000N under bonding 15min, obtain the disk that electrostatic sealing-in is good;
12, be separated: the disk that electrostatic sealing-in step 11 obtained is good is separated into single chip, obtains the overload-resistant micro-pressure sensor of circular arc stress unification structure.
7. the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure according to claim 6, is characterized in that the monocrystalline silicon described in step one is P-type silicon.
8. the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure according to claim 6 or 7, is characterized in that the photoresist model described in step 3, step 6, step 7, step 9 and step 10 is photoresist AZ1500.
9. the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure according to claim 6 or 7, is characterized in that the method removing aluminium in step 7 is as follows: temperature be 80 DEG C, concentration is corrode aluminium in the SPA of 80%; The method removing photoresist in step 7 is as follows: in acetone, dissolve photoresist.
10. the manufacture method of the overload-resistant micro-pressure sensor of circular arc stress unification structure according to claim 6 or 7, is characterized in that the method removing remaining aluminium lamination in step 9 is as follows: temperature be 80 DEG C, concentration is corrode aluminium lamination in the SPA of 80%.
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