CN106915723A - The preparation method of the beam-mass block structure based on laser combination anisotropic etch - Google Patents
The preparation method of the beam-mass block structure based on laser combination anisotropic etch Download PDFInfo
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- CN106915723A CN106915723A CN201510998013.7A CN201510998013A CN106915723A CN 106915723 A CN106915723 A CN 106915723A CN 201510998013 A CN201510998013 A CN 201510998013A CN 106915723 A CN106915723 A CN 106915723A
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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Abstract
The present invention provides a kind of preparation method of the beam-mass block structure based on laser combination anisotropic etch, comprises the following steps：1）There is provided（111）Silicon chip；2）Using laser processing technology described（111）Silicon chip back side forms the first deep trouth；3）Described（111）Front side of silicon wafer forms the second deep trouth；4）Described（111）First oxide layer is formed on silicon chip surface, first deep trouth and the second deep trouth side and bottom；5）Described（111）Front side of silicon wafer forms the 3rd deep trouth；6）The second oxide layer is formed in the side and bottom of the described first oxidation layer surface and the 3rd deep trouth；7）Using reactive ion etching process and anisotropy rot etching technique release beam.Beam-mass block structure is formed using laser processing technology association reaction ion etch process and anisotropy rot etching technique, it is possible to decrease the cost of whole technique；The thickness of girder construction by from（111）The deep reaction ion etching that front side of silicon wafer is carried out determines that craft precision is high.
Description
Technical field
The invention belongs to technical field of micro and nano fabrication, more particularly to a kind of beam-mass based on laser combination anisotropic etch
The preparation method of structure.
Background technology
Micro electro mechanical system (MEMS) technology (MEMS, Micro Electro Mechanical System) uses the technique compatible with integrated circuit
The integrated of sensor and actuator is realized on silicon chip, is a branch of integrated circuit.At present, micro-electromechanical system field
Pillar product including acceleration transducer, micromechanical gyro, pressure sensor, microphone, digital projection chip etc..Its
Middle acceleration transducer and micromechanical gyro etc. typically use beam-mass block structure, are generally added using surface micro or body micromechanics
Work fabrication techniques.Because the performance of the inertia devices such as acceleration transducer and micromechanical gyro is related to quality, run-of-the-mill block
The more big then overall performance of quality is higher, and high performance acceleration transducer and micromechanical gyro are typically made using body micromechanical process.
Bulk silicon micromachining technology is developed from integrated circuit technology, and its typical process flow is by recycling photoetching
Technique and etching process corrode on silicon chip and form structure.The characteristics of body micromechanical process has identical with integrated circuit technology, be
Parallel fabrication technique, i.e., be processed to all chip units on silicon chip simultaneously, therefore is easy to implement mass manufacture.But
On the other hand, existing body micromechanics etching process species is few, especially for high-aspect-ratio (i.e. the ratio of depth and width)
Structure, it is necessary to using deep reaction ion etching technique (Deep Reactive Ion Etching, DRIE) processing.Deep reactive ion
The etching depth-to-width ratio of etching technics is up to 25：1, and the control accuracy of etching depth is higher, is to make high-performance inertia sensing
The critical process of device, but the technique is relatively costly, and the cost to sensor has a significant impact.
Laser processing technology is a kind of serial processing technology, i.e., Laser Processing is chip ablation one by one.With laser machine work(
The continuous improvement of rate, the efficiency of Laser Processing can be comparable with parallel fabrication technique, and processing cost is substantially less than deep reaction
Ion etch process.Limitation Laser Processing sensor manufacture view it is wide variety of main reason is that, laser ablation depth
Control accuracy has gap with deep reaction ion etching technique, it is difficult to control accuracy higher is kept while processing efficiency is ensured.
The content of the invention
The shortcoming of prior art in view of the above, the present invention proposes a kind of deep reaction ion etching, anisotropic wet corrosion
With the technique that Laser Processing is combined, the beam-mass block structure of thickness controllable precise can be made on (111) silicon chip, be capable of achieving
The high accuracy of the device such as acceleration transducer and micromechanical gyro, low cost manufacture.
His related purpose to achieve the above object, the present invention provides a kind of beam-mass based on laser combination anisotropic etch
The preparation method of structure, the preparation method is comprised the following steps：
1) (111) silicon chip is provided；
2) the first deep trouth is formed in (111) silicon chip back side using laser processing technology, first deep trouth is closed for annular
Groove, is surrounded on the area periphery that subsequently form mass；
3) the second deep trouth is formed in (111) front side of silicon wafer, second deep trouth is corresponding up and down with first deep trouth, and
The region segmentation that subsequently formed beam is multistage；First deep trouth is more than or equal to institute with the depth sum of second deep trouth
State the thickness of (111) silicon chip；
4) the first oxide layer is formed in (111) silicon chip surface, first deep trouth and the second deep trouth side and bottom；
5) the 3rd deep trouth is formed in (111) front side of silicon wafer, the 3rd deep trouth is located at the region both sides that subsequently form beam,
And the length direction along the region that subsequently form beam extends, and one end is connected with second deep trouth；
6) the second oxide layer is formed in the side and bottom of the described first oxidation layer surface and the 3rd deep trouth；
7) using reactive ion etching process and anisotropy rot etching technique release beam.
As a kind of preferred scheme of the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention,
Step 2) in the depth of first deep trouth that is formed meet following relational expression：
hlt=H-hb-δ
In formula, hltIt is the depth of first deep trouth, H is the thickness of described (111) silicon chip, hbIt is the beam subsequently to be formed
Thickness, δ is safe clearance.
As a kind of preferred scheme of the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention,
Step 3) in the width of second deep trouth that is formed meet following relational expression：
wdt≤wlt-2ε
In formula, wdtIt is the width of second deep trouth, wltIt is the width of first deep trouth, ε is positive and negative lithography alignment error.
As a kind of preferred scheme of the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention,
Step 4) in, using thermal oxidation technology in (111) silicon chip surface, first deep trouth and the second deep trouth side and
First oxide layer is formed on bottom.
As a kind of preferred scheme of the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention,
Step 5) in formed the 3rd deep trouth length direction edge<112>Crystal orientation；The depth of the 3rd deep trouth is equal to and subsequently wants shape
Into beam thickness, the length of the 3rd deep trouth is equal to the length of the beam subsequently to be formed, positioned at the region that subsequently form beam
The interval width of the 3rd deep trouth of both sides is equal to the width of the beam subsequently to be formed；Positioned at the region both sides that subsequently form beam
The interval width of the 3rd deep trouth meet following relational expression with the length of the 3rd deep trouth：
In formula, w1It is the interval width of the 3rd deep trouth positioned at the region both sides that subsequently form beam, L1For the described 3rd deeply
The length of groove.
As a kind of preferred scheme of the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention,
Step 6) in, form described in the side and bottom of the described first oxidation layer surface and the 3rd deep trouth using thermal oxidation technology
Second oxide layer.
As a kind of preferred scheme of the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention,
Thickness of the thickness of second oxide layer less than first oxide layer.
As a kind of preferred scheme of the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention,
Step 7) in, comprised the following steps using reactive ion etching process and anisotropy rot etching technique release beam：
71) second oxide layer of the 3rd deep trouth bottom is removed using reactive ion etching process；
72) (111) silicon chip described in etching is continued from the 3rd deep trouth bottom using deep reaction ion etching technique；
73) (111) silicon chip described in the zonal corrosion of etching is continued from the 3rd deep trouth bottom using anisotropic wet corrosive liquid,
So that continue the regional connectivity for etching together from the 3rd deep trouth bottom positioned at the region both sides that subsequently form beam, with true
Bao Liang is completely released.
As a kind of preferred scheme of the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention,
Step 72) in, the depth for continuing to etch from the 3rd deep trouth bottom meets following relational expression：
h2＞ H-hlt-hb
In formula, h2It is the depth for continuing etching from the 3rd deep trouth bottom, H is the thickness of described (111) silicon chip, hltFor institute
State the depth of the first deep trouth, hbIt is the depth of the 3rd deep trouth.
As a kind of preferred scheme of the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention,
Step 73) in, the anisotropic wet corrosive liquid includes potassium hydroxide solution or tetramethyl ammonium hydroxide solution.
As described above, the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention, with following
Beneficial effect：Beam-quality agllutination is formed using laser processing technology association reaction ion etch process and anisotropy rot etching technique
Structure, using the relatively low cost of laser processing technology, it is possible to decrease the cost of whole technique；The thickness of girder construction is by from (111) silicon chip
The deep reaction ion etching that front is carried out determines that craft precision is high；Can be made on (111) silicon chip the beam of thickness controllable precise-
Mass block structure, is capable of achieving high accuracy, the low cost manufacture of the devices such as acceleration transducer and micromechanical gyro.
Brief description of the drawings
Fig. 1 is shown as the flow chart of the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention.
Fig. 2 to Figure 20 is shown as in the preparation method of the beam-mass block structure based on laser combination anisotropic etch of the invention
The structural representation of each step.
Component label instructions
1 (111) silicon chip
2 first deep trouths
3 second deep trouths
4 the 3rd deep trouths
5 regions for continuing etching from the 3rd deep trouth bottom
6 release cavitys
7 masses
8 beams
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be as disclosed by this specification
Content understand other advantages of the invention and effect easily.The present invention can also add by way of a different and different embodiment
To implement or apply, the various details in this specification can also be based on different viewpoints and application, without departing from essence of the invention
Various modifications or alterations are carried out under god.
Fig. 1 to Figure 20 is referred to it should be noted that the diagram provided in the present embodiment only illustrates of the invention in a schematic way
Basic conception, though component count, shape when only display is with relevant component in the present invention rather than according to actual implementation in diagram and
Size is drawn, and it is actual when the implementing kenel of each component, quantity and ratio can be a kind of random change, and its assembly layout type
State is likely to increasingly complex.
Fig. 1 is referred to, the present invention also provides a kind of preparation method of the beam-mass block structure based on laser combination anisotropic etch,
The preparation method of the beam-mass block structure based on laser combination anisotropic etch is comprised the following steps：
1) (111) silicon chip is provided；
2) the first deep trouth is formed in (111) silicon chip back side using laser processing technology, first deep trouth is closed for annular
Groove, is surrounded on the area periphery that subsequently form mass；
3) the second deep trouth is formed in (111) front side of silicon wafer, second deep trouth is corresponding up and down with first deep trouth, and
The region segmentation that subsequently formed beam is multistage；First deep trouth is more than or equal to institute with the depth sum of second deep trouth
State the thickness of (111) silicon chip；
4) the first oxide layer is formed in (111) silicon chip surface, first deep trouth and the second deep trouth side and bottom；
5) the 3rd deep trouth is formed in (111) front side of silicon wafer, the 3rd deep trouth is located at the region both sides that subsequently form beam,
And the length direction along the region that subsequently form beam extends, and one end is connected with second deep trouth；
6) the second oxide layer is formed in the side and bottom of the described first oxidation layer surface and the 3rd deep trouth；
7) using reactive ion etching process and anisotropy rot etching technique release beam.
In step 1) in, refer to S1 steps and the Fig. 2 in Fig. 1, there is provided (111) silicon chip 1.
As an example, the angle of (111) silicon chip 1 as upper and lower surface and monocrystalline silicon (111) crystal face is in the range of ± 1 °
Monocrystalline silicon piece.
In step 2) in, S2 steps and the Fig. 3 to Fig. 4 in Fig. 1 are referred to, wherein, Fig. 3 is the corresponding solid of the step
Structural representation, Fig. 4 is the corresponding cross section structure schematic diagram of the step, using laser processing technology in (111) silicon chip 1
The back side forms the first deep trouth 2, and first deep trouth 2 is annular closed slots, is surrounded on the area periphery that subsequently form mass,
The circular interior zone of i.e. described first deep trouth 2 is the mass subsequently to be formed.
As an example, the depth of first deep trouth 2 meets following relational expression：
hlt=H-hb-δ
In formula, hltIt is the depth of first deep trouth 2, H is the thickness of described (111) silicon chip 1, hbSubsequently to be formed
The thickness of beam, δ is safe clearance, and safe clearance δ can be but be not limited only to 3 times of laser processing technology error.
As an example, nanosecond laser or picosecond laser can be used to be processed with shape the back side of (111) silicon chip 1
Into first deep trouth 2.
Because the cost of laser processing technology is relatively low, form described at the back side of (111) silicon chip 1 using laser processing technology
First deep trouth 2, it is possible to decrease the cost of whole technique.
It should be noted that (111) silicon chip described in Fig. 31 are opaque structure, it is this time deep for the ease of display described first
Deliberately (111) silicon chip 1 by described in is depicted as transparent configuration to groove 2.
In step 3) in, S3 steps and the Fig. 5 to Fig. 7 in Fig. 1 are referred to, form the in the front of (111) silicon chip 1
Two deep trouths 3, second deep trouth 3 is corresponding about 2 with first deep trouth, and it is many for subsequently being formed the region segmentation of beam
Section；First deep trouth 2 is more than or equal to the thickness of described (111) silicon chip 1 with the depth sum of second deep trouth 3.
As an example, being in the specific method that the front of (111) silicon chip 1 forms the second deep trouth 3：First, in (111)
The front surface coated photoresist layer (not shown) of silicon chip 1；Secondly, described the is defined in the photoresist layer using photoetching process
The figure of two deep trouths 3；Then, according to the patterned photoresist layer using described in deep reaction ion etching technique etching (111)
Silicon chip 1 is forming second deep trouth 3；Finally, the photoresist layer is removed.
As an example, the position of second deep trouth 3 uses double-sided alignment lithography alignment with first deep trouth 2, to ensure
State the second deep trouth 3 accurate corresponding about 2 with first deep trouth.
As an example, the width of second deep trouth 3 meets following relational expression：
wdt≤wlt-2ε
In formula, wdtIt is the width of second deep trouth 3, wltIt is the width of first deep trouth 2, ε is missed for positive and negative lithography alignment
Difference.
The depth of second deep trouth 3 meets following relational expression：
hdt＞ H-hlt
In formula, hdtIt is the depth of second deep trouth 3, H is the thickness of described (111) silicon chip 1, hltFor described first deeply
The depth of groove 2.The thickness that the depth of i.e. described second deep trouth 3 should be greater than (111) silicon chip 1 subtracts first deep trouth 2
Depth, ensuring that second deep trouth 3 can be connected with first deep trouth 2, form (111) silicon chip 1 described in insertion
Deep trouth, mass 7 is discharged.
As an example, second deep trouth 3 is divided into multistage by the region that subsequently form beam, i.e., subsequently to form the area of beam
Domain is not etched to form second deep trouth 3 so that second deep trouth 3 is not closed, corresponding to the region that subsequently form beam
Opening is formed, after ensuring to be subsequently formed beam, one end of the beam of formation can be connected with the mass 7, to play support
The effect of the mass 7.The quantity that subsequently form the region of beam can be set according to actual needs, that is, be subsequently formed
The quantity of beam can be set according to actual needs, not limited herein.
In one example, Fig. 5 and Fig. 6 is referred to, the quantity in the region of the beam subsequently to be formed is 4, that is, be subsequently formed beam
Quantity be 4, to form four beams-mass block structure after the completion of preparation；The region of 4 beams subsequently to be formed symmetrically is divided
It is distributed in the both sides of the mass 7.Fig. 5 be four beams-mass block structure to should step dimensional structure diagram, Fig. 6 is figure
5 cross section structure schematic diagram.
In another example, Fig. 7 is referred to, the quantity in the region of the beam subsequently to be formed is 2, i.e., subsequently to form beam
Quantity is 2, to form twin beams-mass block structure after the completion of preparation；2 regions that subsequently form beam are parallel to be distributed in institute
The same side of mass 7 is stated, but is not limited thereto in specific example, 2 regions that subsequently form beam can also be symmetrically
It is distributed in the both sides of the mass 7.Fig. 7 be twin beams-mass block structure to should step dimensional structure diagram.
In step 4) in, the S4 steps in Fig. 1 are referred to, in the surface of (111) silicon chip 1, first deep trouth 2
And the first oxide layer is formed on the side of the second deep trouth 3 and bottom.
As an example, can be by thermal oxidation technology in the surface of (111) silicon chip 1, first deep trouth 2 and described second
The first oxide layer (not shown) is formed on the side of deep trouth 3 and bottom.
As an example, the thickness of first oxide layer can be selected according to actual needs, it is not limited herein.
In step 5) in, S5 steps and the Fig. 8 to Figure 11 in Fig. 1 are referred to, formed in the front of (111) silicon chip 1
3rd deep trouth 4, the 3rd deep trouth 4 is located at the region both sides that subsequently form beam, and along the length in the region that subsequently form beam
Degree direction extends, and one end is connected with second deep trouth 3.
As an example, being in the specific method that the front of (111) silicon chip 1 forms the 3rd deep trouth 4：First, in (111)
The front surface coated photoresist layer (not shown) of silicon chip 1；Secondly, described the is defined as in the photoresist layer using photoetching process
The figure of three deep trouths 4, the figure of the 3rd deep trouth 4 is located at the region both sides that subsequently form beam, and along subsequently forming beam
The length direction in region extend, and one end partly overlaps with second deep trouth 3, is collectively forming encirclement beam-mass block structure
Deep slot pattern；Then, according to described first in the figure of the 3rd deep trouth 4 described in the patterned photoresist layer elder generation erosion removal
Oxide layer, then the 3rd deep trouth 4 is formed using (111) silicon chip 1 described in deep reaction ion etching technique etching；Finally, go
Except the photoresist layer.
As an example, the length direction edge of the 3rd deep trouth 4<112>Crystal orientation；The depth of the 3rd deep trouth 4 is equal to subsequently will
The thickness of the beam of formation, the length of the 3rd deep trouth 4 is equal to the length of the beam subsequently to be formed, positioned at subsequently forming beam
The interval width of the 3rd deep trouth 4 of region both sides is equal to the width of the beam subsequently to be formed；Positioned at the area that subsequently form beam
The interval width of the 3rd deep trouth 4 of domain both sides and the 3rd deep trouth 4 length (width of the beam subsequently to be formed with
The length of beam) meet following relational expression：
In formula, w1It is the interval width of the 3rd deep trouth positioned at the region both sides that subsequently form beam, L1For the described 3rd deeply
The length of groove.
As an example, Fig. 8 be four beams-mass block structure to should step dimensional structure diagram, Fig. 9 ties for the section of Fig. 8
Structure schematic diagram, Figure 10 is the overlooking the structure diagram of Fig. 8.
As an example, Figure 11 be twin beams-mass block structure to should step dimensional structure diagram.
In step 6) in, the S6 steps in Fig. 1 are referred to, in the described first oxidation layer surface and the side of the 3rd deep trouth 4
Second oxide layer is formed on face and bottom.
As an example, can be using thermal oxidation technology in the described first oxidation layer surface and the side and bottom of the 3rd deep trouth 4
Form second oxide layer.
As an example, the thickness of second oxide layer can be selected according to actual needs, it is preferred that described in originally implementing
Thickness of the thickness of the second oxide layer less than first oxide layer.
In step 7) in, refer to S7 steps and the Figure 12 to Figure 20 in Fig. 1, using reactive ion etching process and it is each to
Isomerism erosion process discharges beam 8.
As an example, discharge the beam 8 using reactive ion etching process and anisotropy rot etching technique comprising the following steps：
71) second oxide layer of the bottom of the 3rd deep trouth 4 is removed using reactive ion etching process；Due to reactive ion
The sideetching speed of etching is much smaller than downward corrosion rate, and the 3rd deep trouth 4 is being removed using reactive ion etching process
During second oxide layer of bottom, second oxide layer of the side wall of the 3rd deep trouth 4 is retained；Again due to described second
The thickness of oxide layer, by controlling the time of reactive ion etching, can cause described the less than the thickness of first oxide layer
One oxide layer retains certain thickness；
72) (111) silicon chip 1 described in etching is continued from the bottom of the 3rd deep trouth 4 using deep reaction ion etching technique, in institute
State the bottom part down of the 3rd deep trouth 4 and form the region 5 for continuing etching from the 3rd deep trouth bottom, as shown in Figure 12 to Figure 14, wherein,
Figure 12 be four beams-mass block structure to should step dimensional structure diagram, Figure 13 is the cross section structure schematic diagram of Figure 12,
Figure 14 be twin beams-mass block structure to should step dimensional structure diagram；By the only described bottom of 3rd deep trouth 4 does not have institute
The protection of the second oxide layer is stated, the 3rd deep trouth 4 continues corrosion downwards；From the depth that the bottom of the 3rd deep trouth 4 continues to etch
Degree meets following relational expression：
h2＞ H-hlt-hb
In formula, h2It is the depth in the region 5 for continuing etching from the 3rd deep trouth bottom, H is the thickness of described (111) silicon chip 1
Degree, hltIt is the depth of first deep trouth 2, hbBe the depth of the 3rd deep trouth 3, i.e., the described twice etching of 3rd deep trouth 4
Total depth should be greater than the thickness of (111) silicon chip 1 and subtract the depth of first deep trouth 2；
73) described (111) silicon is corroded in the region 5 for continuing to etch from the 3rd deep trouth bottom using anisotropic wet corrosive liquid
Piece 1 so that the region 5 for continuing to etch from the 3rd deep trouth bottom positioned at the region both sides that subsequently form beam is connected one
Rise, to ensure that beam 8 is completely released, as shown in Figure 15 to Figure 20, wherein, Figure 15 is four beams-mass block structure to should
The dimensional structure diagram of step, Figure 16 is the cross section structure schematic diagram of Figure 15, and Figure 17 is the overlooking the structure diagram of Figure 15,
Figure 19 be twin beams-mass block structure to should step dimensional structure diagram；The anisotropic wet corrosive liquid includes hydrogen-oxygen
Change potassium solution or tetramethyl ammonium hydroxide solution.Because anisotropic etch has self-stopping technology characteristic, when etching time is slightly longer than institute
When taking time, structure is smaller by being influenceed.Anisotropic wet corrosive liquid is extremely low to the corrosion rate of monocrystalline silicon (111) crystal face,
Only the 0.01 of (100) crystal face corrosion rate, negligible.The side wall of the 3rd deep trouth 4 has second oxide layer to protect
Shield, therefore will not also be corroded；The side wall in the region 5 for continuing to etch from the 3rd deep trouth bottom does not have second oxide layer to protect
Shield, can be anisotropically etched corrosion, but the bottom of the 3rd deep trouth 4 is (111) crystal face, therefore will not be described in
Continue corrosion downwards in the bottom that the region 5 for etching is continued in 3rd deep trouth bottom.The short side edge of the 3rd deep trouth 4<110>Crystal orientation,
Can be formed with upper surface (111) crystal orientation into 70.53 ° (11 under anisotropic etchant corrosion) crystal face (is all { 111 } brilliant
Face race), corrosion can be automatically stopped；The corrosion in region 5 of the anisotropic etchant to continuing to etch from the 3rd deep trouth bottom
Only edge is carried out perpendicular to the long side direction of the 3rd deep trouth 4, i.e. edge<110>Crystal orientation is carried out so that the beam 8 is released；It is described
The lower surface of beam 8 is that anisotropic wet corrodes to form (111) face, and the corrosion rate in anisotropic etchant is negligible
Disregard, therefore, the thickness of the beam 8 is approximately equal to the depth h of the 3rd deep trouth 4b.When corrosion is in the lower section of the beam 8
When forming release cavity 6, each face of the release cavity 6 is (111) crystal face, and all directions corrosion rate is approximately 0,
Corrosion is automatically stopped.
Step 73) after the completion of, the dimensional structure diagram of four beams for ultimately forming-mass block structure is as shown in figure 18, most end form
Into twin beams-mass block structure dimensional structure diagram it is as shown in figure 20；From Figure 18 and Figure 20, the one end of the beam 8
It is connected with the mass 7, the other end is connected with (111) silicon chip 1, the length direction edge of the beam 8<112>
Crystal orientation, perpendicular to<110>Crystal orientation.Due to step 73) complete after pattern it is complex, for the ease of display, Tu18Ji
In Figure 20, it is not illustrated for the negligible appearance structure of influence to beam-mass block structure mechanical characteristic.
In sum, the present invention provides a kind of preparation method of the beam-mass block structure based on laser combination anisotropic etch, institute
The preparation method for stating the beam-mass block structure based on laser combination anisotropic etch is comprised the following steps：1) (111) silicon is provided
Piece；2) the first deep trouth is formed in (111) silicon chip back side using laser processing technology, first deep trouth is closed for annular
Groove, is surrounded on the area periphery that subsequently form mass；3) the second deep trouth is formed in (111) front side of silicon wafer, it is described
Second deep trouth is corresponding up and down with first deep trouth, and subsequently to be formed the region segmentation of beam is multistage；First deep trouth with
The depth sum of second deep trouth is more than or equal to the thickness of described (111) silicon chip；4) (111) silicon chip surface,
First deep trouth and the second deep trouth side and bottom form the first oxide layer；5) formed in (111) front side of silicon wafer
3rd deep trouth, the 3rd deep trouth is located at the region both sides that subsequently form beam, and along the length side in the region that subsequently form beam
It is connected with second deep trouth to extension, and one end；6) described first oxidation layer surface and the 3rd deep trouth side and
Second oxide layer is formed on bottom；7) using reactive ion etching process and anisotropy rot etching technique release beam.Using Laser Processing
Technique association reaction ion etch process and anisotropy rot etching technique form beam-mass block structure, relatively low using laser processing technology
Cost, it is possible to decrease the cost of whole technique；The thickness of girder construction is by the deep reaction ion etching that is carried out from (111) front side of silicon wafer
Determine, craft precision is high；Beam-the mass block structure of thickness controllable precise can be made on (111) silicon chip, acceleration is capable of achieving
The high accuracy of the device such as sensor and micromechanical gyro, low cost manufacture.
Effect of above-described embodiment only illustrative principle of the invention, not for the limitation present invention.It is any to be familiar with this technology
Personage all modifications and changes can be carried out to above-described embodiment under without prejudice to spirit and scope of the invention.Therefore, Ju Fansuo
All that tool usually intellectual is completed under without departing from disclosed spirit and technological thought in category technical field are equivalent
Modifications and changes, should be covered by claim of the invention.
Claims (10)
1. a kind of preparation method of the beam-mass block structure based on laser combination anisotropic etch, it is characterised in that the preparation side
Method is comprised the following steps：
1) (111) silicon chip is provided；
2) the first deep trouth is formed in (111) silicon chip back side using laser processing technology, first deep trouth is annular
Closed slots, is surrounded on the area periphery that subsequently form mass；
3) the second deep trouth is formed in (111) front side of silicon wafer, second deep trouth is corresponding up and down with first deep trouth,
And subsequently to be formed the region segmentation of beam is multistage；First deep trouth is more than or waits with the depth sum of second deep trouth
In the thickness of (111) silicon chip；
4) first is formed in (111) silicon chip surface, first deep trouth and the second deep trouth side and bottom to aoxidize
Layer；
5) the 3rd deep trouth is formed in (111) front side of silicon wafer, the 3rd deep trouth is located at the region two that subsequently form beam
Side, and be connected with second deep trouth along the length direction extension in the region that subsequently form beam, and one end；
6) the second oxide layer is formed in the side and bottom of the described first oxidation layer surface and the 3rd deep trouth；
7) using reactive ion etching process and anisotropy rot etching technique release beam.
2. the preparation method of the beam-mass block structure based on laser combination anisotropic etch according to claim 1, its feature
It is：Step 2) in the depth of first deep trouth that is formed meet following relational expression：
hlt=H-hb-δ
In formula, hltIt is the depth of first deep trouth, H is the thickness of described (111) silicon chip, hbSubsequently to be formed
The thickness of beam, δ is safe clearance.
3. the preparation method of the beam-mass block structure based on laser combination anisotropic etch according to claim 1, its feature
It is：Step 3) in the width of second deep trouth that is formed meet following relational expression：
wdt≤wlt-2ε
In formula, wdtIt is the width of second deep trouth, wltIt is the width of first deep trouth, ε is missed for positive and negative lithography alignment
Difference.
4. the preparation method of the beam-mass block structure based on laser combination anisotropic etch according to claim 1, its feature
It is：Step 4) in, using thermal oxidation technology in (111) silicon chip surface, first deep trouth and described second
First oxide layer is formed on deep trouth side and bottom.
5. the preparation method of the beam-mass block structure based on laser combination anisotropic etch according to claim 1, its feature
It is：Step 5) in formed the 3rd deep trouth length direction edge<112>Crystal orientation；Depth of 3rd deep trouth etc.
In the thickness of the beam subsequently to be formed, the length of the 3rd deep trouth is equal to the length of the beam subsequently to be formed, and is wanted positioned at follow-up
The interval width for forming the 3rd deep trouth of the region both sides of beam is equal to the width of the beam subsequently to be formed；Positioned at subsequently wanting shape
The interval width of the 3rd deep trouth of the region both sides of Cheng Liang meets following relational expression with the length of the 3rd deep trouth：
In formula, w1It is the interval width of the 3rd deep trouth positioned at the region both sides that subsequently form beam, L1It is described
The length of three deep trouths.
6. the preparation method of the beam-mass block structure based on laser combination anisotropic etch according to claim 1, its feature
It is：Step 6) in, using thermal oxidation technology in the described first oxidation layer surface and the side and bottom of the 3rd deep trouth
Form second oxide layer.
7. the preparation method of the beam-mass block structure based on laser combination anisotropic etch according to claim 1, its feature
It is：Thickness of the thickness of second oxide layer less than first oxide layer.
8. the preparation method of the beam-mass block structure based on laser combination anisotropic etch according to claim 1, its feature
It is：Step 7) in, comprised the following steps using reactive ion etching process and anisotropy rot etching technique release beam：
71) second oxide layer of the 3rd deep trouth bottom is removed using reactive ion etching process；
72) (111) silicon chip described in etching is continued from the 3rd deep trouth bottom using deep reaction ion etching technique；
73) continued from the 3rd deep trouth bottom using anisotropic wet corrosive liquid described in the zonal corrosion of etching (111)
Silicon chip so that continue the regional connectivity for etching one from the 3rd deep trouth bottom positioned at the region both sides that subsequently form beam
Rise, to ensure that beam is completely released.
9. the preparation method of the beam-mass block structure based on laser combination anisotropic etch according to claim 8, its feature
It is：Step 72) in, the depth for continuing to etch from the 3rd deep trouth bottom meets following relational expression：
h2＞ H-hlt-hb
In formula, h2It is the depth for continuing etching from the 3rd deep trouth bottom, H is the thickness of described (111) silicon chip, hlt
It is the depth of first deep trouth, hbIt is the depth of the 3rd deep trouth.
10. the preparation method of the beam-mass block structure based on laser combination anisotropic etch according to claim 8, its
It is characterised by：Step 73) in, the anisotropic wet corrosive liquid includes potassium hydroxide solution or TMAH
Solution.
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