CN104445044B - The high intensity cantilever beam structure in deviation (111) silicon chip cleavage crystal orientation and manufacture method - Google Patents
The high intensity cantilever beam structure in deviation (111) silicon chip cleavage crystal orientation and manufacture method Download PDFInfo
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Abstract
The present invention provides high intensity cantilever beam structure and the manufacture method in a kind of deviation (111) silicon chip cleavage crystal orientation, and described cantilever beam structure includes: (111) monocrystalline silicon piece；At least cantilever beam, cantilever beam is distributed on (111) monocrystalline silicon piece along specific crystal orientation so that the cleavage surface of cross section deviation (111) monocrystalline silicon piece of cantilever beam.The present invention solves the bottleneck problem that conventional single-crystal silicon cantilever beam impact strength is difficult to improve further.Can be widely applied to the inertial sensor development of high range, have the advantages that technique is simple and compatibility is strong, cost of manufacture is low, be suitable for production in enormous quantities, have great application prospect in industrial automatic control, biologic medical and military field.
Description
Technical field
The invention belongs to silicon micro mechanical inertial sensor application, relate to high intensity cantilever beam structure and the manufacture method in a kind of deviation (111) silicon chip cleavage crystal orientation.
Background technology
It is known that in MEMS microsensor field, be often used for developing the sensor component of different purposes by the crucial sensitive movable member as sensor based on silica-based micromachine cantilever beam, such as: biosensor, chemical sensor, inertial sensor etc..These sensors are widely applied to the fields such as environmental monitoring, food safety, industry automatic control, military affairs, play an important role.
The micro mechanical sensor of based single crystal silicon cantilever is mainly by the outstanding mechanical characteristic of single-crystal silicon cantilever beam and the micro-cantilever highstrung feature of change to faint power, when cantilever beam deforms under the effect of external force, utilize and be integrated in the force sensing resistance at cantilever beam Root Stress maximum position and carry out perception cantilever beam deformation signal, and convert thereof into the signal of telecommunication and detect and record.If the micro mechanical sensor of this based single crystal silicon cantilever changes mainly for detection of outside faint active force, general designed the thinnest (the several microns of cantilever beam, the thinnest), and also do not have particular/special requirement to cantilever beam impact strength, during also not appearing in detection, silica-based cantilever beam causes due to impact strength deforming crack conditions generation not.But for high range, even for the inertial sensor-acceleration transducer of superelevation range, such as: being used for detecting the occasions such as vehicle collision experiment, the blast of high quick-fried object, impact and Qinzhou harbor fuse, this acceleration transducer based on cantilever beam shape changing detection just requires that cantilever beam to have the highest impact resistance to guarantee that sensor is unlikely to the ability to work of scattering and disappearing because of cantilever beam fracture when useful signal being detected.Therefore, the impact strength how improving cantilever beam is the key realizing the detection of acceleration transducer superelevation range.
nullTraditional high-impact acceleration sensor based on cantilever beam mainly uses silica glass bonding structure，The thickness carrying out thinning silicon chip to required design cantilever beam is corroded by the back side of (100) silicon chip，Then utilize silicon deep reaction ion etching from monocrystalline silicon piece front to discharge cantilever beam，Bonding technology is finally utilized to complete the bonding of si-glass，Form complete acceleration sensor structure (P.Dong based on cantilever beam,X.Li,H.Yang,el at.High-performance monolithic triaxial piezoresistive shock accelerometers,Sensors and Actuators A141,2008:339-346；nullJ.Dong,X.Li,Y.Wang,D.Lu and S.Ahat,Silicon micro-machined high-shock accelerometers with a curved-surface-application structure for over-range stop protection and free-mode-resonance depression,Journal of Micromechanics and Microengineering,12(6),2002:742-746)，This employing (100) silicon chip and glass bonding structure，Cantilever beam along the arrangement of<110>crystal orientation，Due to cleavage surface (111) face that designed cantilever beam cross section is monocrystalline silicon piece，Therefore cantilever beam is under bigger penetration impact force action，Cantilever beam is easily along direction, face fracture of dissociating，Greatly limit the anti-impact resistance of this cantilever beam.Additionally, this silica glass bonding structure has not only broken up the bulk strength of sensor, and size is bigger than normal, complex process, and production cost cannot reduce.Certainly, in order to improve this tradition detection based on cantilever acceleration transducer range further, the physical dimension of cantilever beam can also be shortened by or increase the width of cantilever beam to improve the impact resistance of cantilever beam, and then improve detection range, but this structure improved method by the dynamic characteristic to sacrifice sensor detection sensitivity and sensor as cost.
nullResult in high-impact acceleration sensor in order to solve tradition acceleration transducer based on silicon-based micro-cantilevers be difficult to improve further a difficult problem for range owing to cantilever beam impact resistance limits，Jiachou Wang in 2010 et al. develops a kind of shock resistance acceleration transducer based on (111) silicon chip，Sensor cantilever beam is arranged along<211>crystal orientation，The sensor developed obtains impact resistance (J.Wang and X.Li.A high-Performance Dual-Cantilever High-Shock Accelerometer Single-Sided Micromachinined in (111) the Silicon Wafers that 100,000 g values are above,Journal of Microelectromechanical Systems,19(6),2010:1515-1520).But, owing to above-mentioned acceleration sensing cantilever beam is arranged along<211>crystal orientation, the cross section of cantilever beam is natural cleavage plane (111) crystal face of monocrystalline silicon piece, when impact strength reaches certain g value cantilever beam easily along (111) cleavage surface (, the cross section of cantilever beam) fracture, the most this defect greatly limit the further raising of developed sensor impact resistance.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide high intensity cantilever beam structure and the manufacture method in a kind of deviation (111) silicon chip cleavage crystal orientation, for solving owing to the cleavage surface that cross section is monocrystalline silicon piece of cantilever beam causes described cantilever beam shock resistance or tensile resistance poor in prior art, the problem being easily broken off during by greater impact.
For achieving the above object and other relevant purposes, the present invention provides the high intensity cantilever beam structure in a kind of deviation (111) silicon chip cleavage crystal orientation, and the high intensity cantilever beam structure in described deviation (111) silicon chip cleavage crystal orientation at least includes: (111) monocrystalline silicon piece；At least cantilever beam, described cantilever beam is distributed on described (111) monocrystalline silicon piece along specific crystal orientation so that the cleavage surface of described (111) monocrystalline silicon piece of cross section deviation of described cantilever beam.
Preferably, described cantilever beam axis along its length and<211>crystal orientation have certain angle α.
Preferably, described angle α in the range of: 37 °≤α≤43 °.
Preferably, the size of described angle α is 40 °.
Preferably, the shape of cross section of described cantilever beam is rectangle.
Preferably, described cantilever beam is multiple, and the plurality of cantilever beam is integrated in the same surface of described monocrystalline silicon piece.
The present invention also provides for the manufacture method of the high intensity cantilever beam structure in a kind of deviation (111) silicon chip cleavage crystal orientation, comprises the following steps:
1) one (111) monocrystalline silicon piece is provided；
2) silicon dioxide passivation protection layer is made in described (111) monocrystalline silicon piece front；At described silicon dioxide passivation protection layer surface-coated photoresist and make cantilever beam figure by lithography；Described cantilever beam figure axis along its length and<211>crystal orientation have certain angle α, so that the cleavage surface of described (111) monocrystalline silicon piece of longitudinal section deviation that the cantilever beam being subsequently formed is along its length；
3) silicon etching equipment is utilized to etch release window, the thickness that the degree of depth is described cantilever beam of described release window；
4) in described release window, passivating material is deposited as side wall passivation protective layer；
5) utilize reactive ion etching process to remove the passivation protection layer of described release bottom of window, and expose the monocrystal silicon of described release bottom of window；Then the monocrystal silicon that recycling silicon deep reaction ion etch process continues to expose described in downward etching corrodes the sacrifice layer of release cantilever beam as next step anisotropic wet；
6) utilize wet-etching technology from (111) monocrystalline silicon piece described in the lateral encroaching of described (111) monocrystalline silicon piece front, discharge described cantilever beam.
Preferably, in step 2) in, utilize thermal oxidation technology to make described silicon dioxide passivation protection layer in described (111) monocrystalline silicon piece front.
Preferably, described angle α in the range of: 37 °≤α≤43 °.
Preferably, in step 4) in, the method utilizing LPCVD technique to be sequentially depositing low stress SiNx and TEOS silicon oxide makes side wall passivation protective layer.
As mentioned above, the high intensity cantilever beam structure in deviation (111) the silicon chip cleavage crystal orientation of the present invention and manufacture method, have the advantages that and cantilever beam is arranged on (111) monocrystalline silicon piece mechanical characteristic preferably crystal orientation (that is: between cantilever beam axis and<211>crystal orientation along its length, angle is 37 °～43 °), this cross section allowing for cantilever beam not only avoids monocrystalline silicon piece natural cleavage plane (111) crystal face, and make cantilever beam obtain more excellent mechanical characteristic along institute's arragement direction, substantially increase impact resistance.In cantilever beam processing technology, the present invention combines (111) silicon chip anisotropic wet etching characteristic dexterously, realize discharging cantilever beam suspension structure from cantilever beam both sides root lateral encroaching, it is achieved that the integrated one side of cantilever beam based single crystal silicon substrate makes.Relative to traditional cantilever beam structure, the present invention not only substantially increases the impact resistance of single-crystal silicon cantilever beam, and can realize cantilever beam low cost, small size, technique and simply and produce in enormous quantities.Present invention can apply to high-range acceleration transducer make, in Industry Control, military field, there is huge application prospect.
Accompanying drawing explanation
Fig. 1 is shown as the three dimensional structure schematic diagram of the high intensity cantilever beam structure in deviation (111) the silicon chip cleavage crystal orientation of the present invention.
Fig. 2 is shown as the high intensity cantilever beam structure three dimensional structure schematic cross-section along cantilever beam cross section in deviation (111) the silicon chip cleavage crystal orientation of the present invention.
Fig. 3 is shown as the flow chart of the manufacture method of the high intensity cantilever beam structure in deviation (111) the silicon chip cleavage crystal orientation of the present invention.
Fig. 4 to Fig. 8 is shown as the vertical section structure schematic diagram of each step of manufacture method of the high intensity cantilever beam structure in deviation (111) the silicon chip cleavage crystal orientation of the present invention.Wherein Fig. 4 is for providing (111) monocrystalline silicon piece；Fig. 5 is that dry etching defines cantilever beam structure thickness；Fig. 6 is the protection of cantilever beam sidewall passivation layer；Fig. 7 is that dry etching cantilever beam discharges gap；Fig. 8 is that wet etching discharges cantilever beam structure.
Element numbers explanation
1 cantilever beam
The cross section of 11 cantilever beams
Movable gap in the 2 cantilever beam sensitivity directions of motion
The 3 movable gaps vertically and in the cantilever beam sensitivity direction of motion
4 (111) monocrystalline silicon pieces
5 silicon dioxide passivation protection layers
6 low stress SiNxes
7 TEOS silicon oxides
8 release windows
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be understood other advantages and effect of the present invention easily by the content disclosed by this specification.The present invention can also be carried out by the most different detailed description of the invention or apply, and the every details in this specification can also carry out various modification or change based on different viewpoints and application under the spirit without departing from the present invention.
Refer to figure and refer to Fig. 1 to Fig. 8.It should be noted that, diagram provided in the present embodiment illustrates the basic conception of the present invention the most in a schematic way, though component count, shape and size when only showing the assembly relevant with the present invention rather than implement according to reality in Tu Shi are drawn, during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout kenel is likely to increasingly complex.
Embodiment one
Refer to Fig. 1 to Fig. 2, the present invention provides the high intensity cantilever beam structure in a kind of deviation (111) silicon chip cleavage crystal orientation, and the high intensity cantilever beam structure in described deviation (111) silicon chip cleavage crystal orientation at least includes: (111) monocrystalline silicon piece 4；At least cantilever beam 1, described cantilever beam 1 is distributed on described (111) monocrystalline silicon piece 4 along specific crystal orientation so that the cross section 11 of described cantilever beam 1 deviates the cleavage surface of described (111) monocrystalline silicon piece 4.The cross section 11 of described cantilever beam 1 is two end faces being perpendicular to described cantilever beam 1 length direction.
Concrete, the cross section of described cantilever beam 1 is rectangle.
Concrete, the sensitive direction of described cantilever beam 1 is in-plane moving direction, described cantilever beam 1 one end is clamped on described (111) monocrystalline silicon piece 4, i.e. there is the movable gap 2 in the sensitive direction of motion both sides at described cantilever beam 1, has the movable gap 3 being perpendicular in the sensitive direction of motion in the lower section of described cantilever beam 1.It is internal that movable gap 3 owing to being perpendicular in the cantilever beam sensitivity direction of motion is directly embedded in described (111) monocrystalline silicon piece 4, the most whole described cantilever beam 1 can be formed by single silicon-chip monohedron micromachining processing by single (111) monocrystalline silicon piece, it is not necessary to by traditional double-side technology and silicon-silicon or silicon on glass bonding structure.
Concrete, the quantity of described cantilever beam 1 can be designed as one or multiple as required, preferably, in the present embodiment, described cantilever beam 1 is multiple, the plurality of cantilever beam 1 is the same surface that the integrated one side processing technology of based single crystal silicon chip is integrated in described (111) monocrystalline silicon piece 4, and the plurality of cantilever beam 1 is arranged in the same surface of described (111) monocrystalline silicon piece 4 abreast.
Concrete, owing to the cleavage surface of described (111) monocrystalline silicon piece 4 is (111) face, in the present embodiment, between axis and<211>crystal orientation (or the main trimming of described (111) monocrystalline silicon piece 4) along its length of described cantilever beam 1, there is certain angle α.Due to when described angle α is equal to 0 ° or 60 °, the cross section 11 of described cantilever beam 1 is cleavage surface (111) face of described (111) monocrystalline silicon piece 4, so, the scope of described angle α should be 0 ° of ＜ α ＜ 60 °.Described cantilever beam 1 is when theoretical limit shock resistance height of the fall is 45cm, when the impact acceleration that the most described cantilever beam 1 is born is 1.2 ten thousand g, in certain angular range, along with described angle α is gradually increased, the fracture probability of described cantilever beam 1 is gradually reduced, when described angle α reaches certain numerical value, the fracture probability of described cantilever beam 1 minimizes；Along with the further increase of described angle α, described fracture probability presents again the trend being gradually increased, and such as, when the size of described angle α is 0 °, the fracture probability of described cantilever beam 1 is 72.4%；When the size of described angle α is 15 °, the fracture probability of described cantilever beam 1 is 44.8%；When the size of described angle α is 30 °, the fracture probability of described cantilever beam 1 is 20.7%；When the size of described angle α is 40 °, the fracture probability of described cantilever beam 1 is 24.1%；When the size of described angle α is 50 °, the fracture probability of described cantilever beam 1 is 37.9%；When the size of described angle α is 60 °, the fracture probability of described cantilever beam 1 is 75.9%.It follows that when the size of described angle α is 30 °, the impact resistance of described cantilever beam 1 is best, and the size of described angle α is to take second place when 40 °.But when being 30 ° due to the size of described angle α, the side, both sides of described cantilever beam 1 is (111) face, it is unfavorable for the corrosion release of described cantilever beam 1, and along with angle α is gradually increased again by 40 ° of fracture probabilities being gradually increased described cantilever beam 1, therefore, the above analysis result also combines the realizability of described cantilever beam 1, it is preferable that described angle α in the range of: 37 °≤α≤43 °；It is further preferable that the size of described angle α is 40 °.By list of references: Donghun Kwak, Jpngpal Kim, Sangjun Park, Hyoungho Ko and Dong-II Cho, Why is (111) silicon a better mechanical material for MEMS:Torsion case, ASME2003,2003:259-264 can deduce, the described cantilever beam 1 arranged along this crystal orientation not only monocrystal silicon mechanical property is best, and owing to the cross section 11 of described cantilever beam 1 is not (111) cleavage surface of described (111) monocrystalline silicon piece 4, therefore impact resistance is the strongest.In addition, the both sides sidewall of the described cantilever beam 1 arranged along this crystal orientation is not (111) crystal face, and the upper and lower surface of described cantilever beam 1 is (111) crystal face, by silicon chip anisotropic wet etching characteristic, selectivity can be carried out from described cantilever beam 1 both sides root easily and discharge described cantilever beam 1, this movable gap 3 allowing for being perpendicular in the cantilever beam sensitivity direction of motion is directly embedded in the inside of described (111) monocrystalline silicon piece 4, it is to avoid silicon-silicon that conventional cantilever beam is used or silicon on glass bonding structure.It is embedded in the size in the movable gap 3 being perpendicular in the cantilever beam sensitivity direction of motion within described (111) monocrystalline silicon piece 4 by adjusting described cantilever beam 1, can effectively suppress intersecting axle signal disturbing on vertical cantilever sensitive direction.
Concrete, in the present embodiment, a length of 380 μm of described cantilever beam 1, thickness is 50 μm, and width is 18 μm；But the size of described cantilever beam 1 is not limited to that, the cantilever beam with different length, thickness and width can be designed according to the actual needs.
Concrete, owing in described (111) monocrystalline silicon piece, piezoresistance coefficient size is unrelated with crystal orientation arrangement, wherein longitudinal piezoresistance coefficient size is π 44/2, and horizontal piezoresistance coefficient size is-π 44/6.Therefore, according to piezoresistance coefficient characteristic in above-mentioned (111) silicon chip, the described cantilever beam 1 of the present invention can produce the power sensitive high-strength impact-resistant acceleration transducer of the different occasion of application.
Mainly by common (111) monocrystalline silicon piece difference of single crystal silicon material mechanical characteristic on different crystal orientations in the present embodiment, select the position, crystal orientation that described cantilever beam place monocrystal silicon impact strength is optimum.On this basis, in order to realize this high intensity cantilever beam structure along the arrangement of optimum mechanics crystal orientation that the present embodiment provides, the present embodiment also needs to fully combine the structure exclusive with (111) crystal face of (110) crystal face in (111) monocrystalline silicon piece and crystal face distribution mode, then the corrosion of MEMS micro fabrication techniques neutral and alkali anisotropic wet is relied on, complete from cantilever beam root both sides etching release cantilever beam, it is achieved that the single silicon-chip monohedron silicon micro mechanical of cantilever beam makes and the integrated structure of cantilever beam with monocrystalline substrate.Many wafer bondings technique is combined relative to the two-sided processing of conventionally employed single silicon-chip, or use expensive soi wafer to realize the single-crystal silicon cantilever girder construction of single silicon-chip single-sided process, the chip size that the present embodiment monocrystal silicon integration high intensity cantilever beam structure based on (111) silicon chip deviation cleavage crystal orientation special angle is not only substantially reduced, reduce cost of manufacture, it is often more important that a high intensity cantilever beam structure will be provided for high-strength impact-resistant single-crystal silicon cantilever beam.
Embodiment two
Referring to Fig. 3 to Fig. 8, the present invention also provides for the manufacture method of the high intensity cantilever beam structure in a kind of deviation (111) silicon chip cleavage crystal orientation, comprises the following steps:
1) one (111) monocrystalline silicon piece 4 is provided；
2) silicon dioxide passivation protection layer 5 is made in described (111) monocrystalline silicon piece 4 front；At described silicon dioxide passivation protection layer 5 surface-coated photoresist and make cantilever beam figure by lithography；Described cantilever beam figure axis along its length and<211>crystal orientation have certain angle α, so that the cleavage surface of described (111) monocrystalline silicon piece of longitudinal section deviation that the cantilever beam being subsequently formed is along its length；
3) silicon etching equipment is utilized to etch release window 8, the thickness that the degree of depth is described cantilever beam of described release window 8；
4) in described release window 8, passivating material is deposited as side wall passivation protective layer；
5) utilize reactive ion etching process to remove the passivation protection layer bottom described release window 8, and expose the monocrystal silicon of described release bottom of window；Then the monocrystal silicon that recycling silicon deep reaction ion etch process continues to expose described in downward etching corrodes the sacrifice layer of release cantilever beam as next step anisotropic wet；
6) utilize wet-etching technology from (111) monocrystalline silicon piece 4 described in the lateral encroaching of described (111) monocrystalline silicon piece front, discharge described cantilever beam.
In step 1) in, refer to the S1 step in Fig. 3 and Fig. 4, it is provided that one (111) monocrystalline silicon piece 4.Described (111) monocrystalline silicon piece 4 is the monocrystalline silicon piece of single-sided polishing or twin polishing, and thickness is 450 μm, and axle cuts 0 ± 0.1 ° partially.
In step 2) in, refer to the S2 step in Fig. 3, make silicon dioxide passivation protection layer 5 in described (111) monocrystalline silicon piece 4 front；At described silicon dioxide passivation protection layer 5 surface-coated photoresist (not shown) and make cantilever beam figure by lithography；Described cantilever beam figure axis along its length and<211>crystal orientation (or main trimming of described (111) monocrystalline silicon piece 4) have certain angle α, so that the cleavage surface of described (111) monocrystalline silicon piece of longitudinal section deviation that the cantilever beam being subsequently formed is along its length.
Concrete, utilize thermal oxidation technology to form layer of silicon dioxide passivation protection layer 5 in the front of described (111) monocrystalline silicon piece 4, the thickness of described silicon dioxide passivation protection layer 5 is 2 μm.
Concrete, described angle α in the range of: 37 °≤α≤43 °, it is preferable that in the present embodiment, the size of described angle α is 40 °.
In step 3) in, refer to the S3 step in Fig. 3 and figure, 5, utilize silicon etching equipment to etch release window 8, the thickness that the degree of depth is described cantilever beam of described release window 8.
Concrete, reactive ion etching equipment (RIE) is utilized to etch away the silicon dioxide passivation layer covered above cantilever beam figure, then under photoresist mask, release window 8 is etched with pasc reaction ion etching equipment (DRIE), the thickness that the degree of depth is described cantilever beam of described release window 8, finally removes the photoresist covered on described (111) monocrystalline silicon piece 4 surface.
Concrete, the thickness of described cantilever beam is 50 μm.
In step 4) in, refer to the S4 step in Fig. 3 and Fig. 6, in described release window 8, deposit passivating material as side wall passivation protective layer.
Concrete, the method utilizing low-pressure chemical vapor deposition (LPCVD) technique to be sequentially depositing low stress SiNx 6 and TEOS (tetraethyl orthosilicate) silicon oxide 7 in described release window 8 makes side wall passivation protective layer.The thickness of described low stress SiNx 6 is 0.2 μm with the thickness of described TEOS silicon oxide 7.
In step 5) in, refer to the S5 step in Fig. 3 and Fig. 7, utilize reactive ion etching process to remove the passivation protection layer bottom described release window 8, and expose the monocrystal silicon of described release bottom of window；Then the monocrystal silicon that recycling silicon deep reaction ion etch process continues to expose described in downward etching corrodes the sacrifice layer of release cantilever beam as next step anisotropic wet.
Concrete, utilize RIE equipment etching to be positioned at the passivation protection layer bottom described release window 8, the passivation protection layer of described release window 8 both sides is not etched during etching；Then recycling DRIE etches exposed monocrystal silicon out bottom described release window 8, etches certain degree of depth sacrifice gap as wet method release cantilever beam structure.In the present embodiment, the degree of depth continuing downwards etching is 2.0 μm, and the degree of depth i.e. sacrificing gap is 2.0 μm.
In step 6) in, refer to S6 step and Fig. 8 of Fig. 3, utilize wet-etching technology from (111) monocrystalline silicon piece 4 described in the lateral encroaching of described (111) monocrystalline silicon piece front, discharge described cantilever beam.
Concrete, utilize KOH (or TMAH) etchant solution from (111) monocrystalline silicon piece 4 described in the bottom lateral encroaching of release window 8 described in the front (i.e. the front of cantilever beam) of described (111) monocrystalline silicon piece 4, cantilever beam both sides, the described cantilever beam of final release.Preferably, described wet etching solution is for being heated to 30 DEG C～70 DEG C, and mass percent is the KOH solution of 30%～50%；It is highly preferred that in the present embodiment, described anisotropic etchant solution is for being heated to 50 DEG C, and mass percent is the KOH solution of 40%.
In sum, the present invention provides high intensity cantilever beam structure and the manufacture method in a kind of deviation (111) silicon chip cleavage crystal orientation, mainly by common (111) monocrystalline silicon piece difference of single crystal silicon material mechanical characteristic on different crystal orientations, select the position, crystal orientation that described cantilever beam place monocrystal silicon impact strength is optimum.On this basis, in order to realize this high intensity cantilever beam structure along the arrangement of optimum mechanics crystal orientation that the present embodiment provides, the most fully combine structure and crystal face distribution mode that in (111) monocrystalline silicon piece, (110) crystal face is exclusive with (111) crystal face, then the corrosion of MEMS micro fabrication techniques neutral and alkali anisotropic wet is relied on, complete from cantilever beam root both sides etching release cantilever beam, it is achieved that the single silicon-chip monohedron silicon micro mechanical of cantilever beam makes and the integrated structure of cantilever beam with monocrystalline substrate.Many wafer bondings technique is combined relative to the two-sided processing of conventionally employed single silicon-chip, or use expensive soi wafer to realize the single-crystal silicon cantilever girder construction of single silicon-chip single-sided process, the chip size that monocrystal silicon integration high intensity cantilever beam structure based on (111) silicon chip deviation cleavage crystal orientation special angle is not only substantially reduced, reduce cost of manufacture, it is often more important that a high intensity cantilever beam structure will be provided for high-strength impact-resistant single-crystal silicon cantilever beam.The present invention solves the bottleneck problem that conventional single-crystal silicon cantilever beam impact strength is difficult to improve further.Can be widely applied to the inertial sensor development of high range, have the advantages that technique is simple and compatibility is strong, cost of manufacture is low, be suitable for production in enormous quantities, have great application prospect in industrial automatic control, biologic medical and military field.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by any person skilled in the art.Therefore, art has all equivalence modification or changes that usually intellectual is completed under without departing from disclosed spirit and technological thought such as, must be contained by the claim of the present invention.
Claims (7)
1. the high intensity cantilever beam structure in deviation (111) silicon chip cleavage crystal orientation, it is characterised in that described deviation
(111) the high intensity cantilever beam structure in silicon chip cleavage crystal orientation includes:
(111) monocrystalline silicon piece；
At least cantilever beam, described cantilever beam is distributed in described (111) monocrystalline silicon piece along specific crystal orientation
On so that the cleavage surface of described (111) monocrystalline silicon piece of cross section deviation of described cantilever beam；Described cantilever
Beam axis along its length is between<211>crystal orientation and<110>crystal orientation, and has one with<211>crystal orientation
Fixed angle α；Described angle α in the range of: 37 °≤α≤43 °.
The high intensity cantilever beam structure in deviation the most according to claim 1 (111) silicon chip cleavage crystal orientation, it is special
Levy and be: the size of described angle α is 40 °.
The high intensity cantilever beam structure in deviation the most according to claim 1 (111) silicon chip cleavage crystal orientation, it is special
Levy and be: the shape of cross section of described cantilever beam is rectangle.
The high intensity cantilever beam structure in deviation the most according to claim 1 (111) silicon chip cleavage crystal orientation, it is special
Levying and be: described cantilever beam is multiple, the plurality of cantilever beam is integrated in the same table of described monocrystalline silicon piece
Face.
5. the manufacture method of the high intensity cantilever beam structure in deviation (111) silicon chip cleavage crystal orientation, it is characterised in that:
Comprise the following steps:
1) one (111) monocrystalline silicon piece is provided；
2) silicon dioxide passivation protection layer is made in described (111) monocrystalline silicon piece front；Make cantilever beam figure by lithography
Shape；Described cantilever beam figure axis along its length between<211>crystal orientation and<110>crystal orientation, and with<
211 > crystal orientation has certain angle α, described angle α in the range of: 37 °≤α≤43 ° so that after
The cleavage surface of the continuous cantilever beam formed described (111) monocrystalline silicon piece of longitudinal section deviation along its length；
3) silicon etching equipment is utilized to etch release window, the thickness that the degree of depth is described cantilever beam of described release window
Degree；
4) in described release window, passivating material is deposited as side wall passivation protective layer；
5) utilize reactive ion etching process to remove the passivation protection layer of described release bottom of window, and expose institute
State the monocrystal silicon of release bottom of window；Then recycling silicon deep reaction ion etch process continues to etch downwards institute
State the monocrystal silicon exposed and discharge the sacrifice layer of cantilever beam as the corrosion of next step anisotropic wet；
6) utilize wet-etching technology from (111) monocrystalline described in the lateral encroaching of described (111) monocrystalline silicon piece front
Silicon chip, discharges described cantilever beam.
The making of the high intensity cantilever beam structure in deviation the most according to claim 5 (111) silicon chip cleavage crystal orientation
Method, it is characterised in that: in step 2) in, utilize thermal oxidation technology at described (111) monocrystalline silicon piece
Front makes described silicon dioxide passivation protection layer.
The making of the high intensity cantilever beam structure in deviation the most according to claim 5 (111) silicon chip cleavage crystal orientation
Method, it is characterised in that: in step 4) in, utilize LPCVD technique be sequentially depositing low stress SiNx and
The method of TEOS silicon oxide makes side wall passivation protective layer.
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| CN1518399A (en) * | 2003-01-20 | 2004-08-04 | ������������ʽ���� | Precision mask for film forming and its manufacturing method, electroluminescence device and manufacturing method |
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| CN101968495A (en) * | 2010-07-27 | 2011-02-09 | 中国科学院上海微系统与信息技术研究所 | Cantilever beam acceleration transducer manufactured by micro-machining on single side of single silicon chip and method |
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| DE4421337A1 (en) * | 1994-06-17 | 1995-12-21 | Telefunken Microelectron | Multi-stage etching procedure for micromechanical semiconductor element |
| CN1518399A (en) * | 2003-01-20 | 2004-08-04 | ������������ʽ���� | Precision mask for film forming and its manufacturing method, electroluminescence device and manufacturing method |
| CN1792765A (en) * | 2005-12-30 | 2006-06-28 | 中国科学院上海微系统与信息技术研究所 | Nano width resonance structure on silicon sheet of SOI and preparation process thereof |
| CN101968495A (en) * | 2010-07-27 | 2011-02-09 | 中国科学院上海微系统与信息技术研究所 | Cantilever beam acceleration transducer manufactured by micro-machining on single side of single silicon chip and method |
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