CN104445044A - High-strength cantilever beam structure deviating (111) from silicon wafer cleavage crystal orientation and manufacture method thereof - Google Patents
High-strength cantilever beam structure deviating (111) from silicon wafer cleavage crystal orientation and manufacture method thereof Download PDFInfo
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Abstract
The invention provides a high-strength cantilever beam structure deviating from the (111) silicon wafer cleavage crystal orientation and a manufacture method thereof. The cantilever beam structure comprises a (111) monocrystalline silicon wafer, and at least one cantilever beam, wherein the cantilever beam is distributed on the (111) monocrystalline silicon wafer along a specific crystal orientation, so as to ensure that the section of the cantilever beam deviates from the cleavage plane of the (111) monocrystalline silicon wafer. The high-strength cantilever beam structure solves the bottleneck problem that the impact strength of original monocrystalline silicon cantilever beams is difficult to further improve. The high-strength cantilever beam structure can be widely applied to the development of high-range inertial sensors, has the characteristics of simple technology, high compatibility, low manufacture method and applicability to mass production, and has a great application prospect in fields of industrial automatic control, bio-medical treatment and military.
Description
Technical field
The invention belongs to silicon micro mechanical inertial sensor application, relate to high strength cantilever beam structure and preparation method that one departs from (111) silicon chip cleavage crystal orientation.
Background technology
As everyone knows, in MEMS microsensor field, be often used for developing the sensor component of different purposes by the responsive movable member of key as sensor based on silica-based micromachine cantilever beam, such as: biology sensor, chemical sensor, inertial sensor etc.These sensors are widely applied to the fields such as environmental monitoring, food security, industry automatic control, military affairs, play an important role.
The mechanical characteristic that the micro mechanical sensor of based single crystal silicon cantilever mainly utilizes single-crystal silicon cantilever beam outstanding and the highstrung feature of the change of micro-cantilever to faint power, when deforming under the effect of cantilever beam in external force, utilize the force sensing resistance being integrated in cantilever beam Root Stress maximum position place to carry out perception cantilever beam deformation signal, and convert thereof into the signal of telecommunication and detect and record.If the micro mechanical sensor of this based single crystal silicon cantilever is mainly for detection of the faint active force change in outside, general designed all very thin (the several micron of cantilever beam, even thinner), and particular/special requirement is not had to cantilever beam impact strength yet, also there will not be silica-based cantilever beam in testing process to occur because impact strength causes being out of shape crack conditions not.But for high range, even inertial sensor-the acceleration transducer of superelevation range, such as: for detecting the occasions such as vehicle collision experiment, high quick-fried object blast, impact and Qinzhou harbor fuse, this acceleration transducer based on cantilever beam shape changing detection just requires that cantilever beam will have very high impact resistance and be unlikely to scatter and disappear because cantilever beam ruptures ability to work when useful signal being detected to guarantee sensor.Therefore, the impact strength how improving cantilever beam is the key realizing the detection of acceleration transducer superelevation range.
Traditional high-impact acceleration sensor based on cantilever beam mainly adopts silicon-bond glass structure, the thickness of thinning silicon chip to required design cantilever beam is carried out by the back side corrosion of (100) silicon chip, then utilize the ion etching of silicon deep reaction from monocrystalline silicon piece front to discharge cantilever beam, bonding technology is finally utilized to complete the bonding of si-glass, form the complete acceleration sensor structure (P.Dong based on cantilever beam, X.Li, H.Yang, el at.High-performance monolithic triaxial piezoresistive shock accelerometers, Sensors and Actuators A141, 2008:339-346, J.Dong, X.Li, Y.Wang, D.Lu and S.Ahat, Silicon micro-machined high-shock accelerometers with a curved-surface-application structure for over-range stop protection and free-mode-resonance depression, Journal of Micromechanics and Microengineering, 12 (6), 2002:742-746), this employing (100) silicon chip and bond glass structure, along the cantilever beam of <110> crystal orientation arrangement, due to cleavage surface (111) face that designed cantilever beam cross section is monocrystalline silicon piece, therefore cantilever beam is under larger penetration impact force action, cantilever beam is easily along direction, face fracture of dissociating, greatly limit the anti-impact resistance of this cantilever beam.In addition, this silicon-bond glass structure not only destroys the bulk strength of sensor, and size is bigger than normal, complex process, and production cost cannot reduce.Certainly, in order to improve the detection range of this tradition based on cantilever acceleration transducer further, also the impact resistance of cantilever beam can be improved by the width of the physical dimension or increase cantilever beam that shorten cantilever beam, and then improve detect range, but this structure improve one's methods by with the dynamic characteristic of sacrificing sensor detection sensitivity and sensor for cost.
Result in due to the restriction of cantilever beam impact resistance the difficult problem that high-impact acceleration sensor is difficult to improve further range based on the acceleration transducer of silicon-based micro-cantilevers to solve tradition, the people such as Jiachou Wang in 2010 develop a kind of shock resistance acceleration transducer based on (111) silicon chip, sensor cantilever beam is arranged along <211> crystal orientation, the sensor developed obtains above impact resistance (J.Wang and X.Li.A high-Performance Dual-Cantilever High-Shock Accelerometer Single-Sided Micromachinined in (111) the Silicon Wafers of 100,000 g values, Journal of Microelectromechanical Systems, 19 (6), 2010:1515-1520).But, because above-mentioned acceleration sensing cantilever beam is arranged along <211> crystal orientation, the cross section of cantilever beam is natural cleavage plane (111) crystal face of monocrystalline silicon piece, when impact strength reaches certain g value cantilever beam easily along (111) cleavage surface (, the cross section of cantilever beam) fracture, therefore this defect greatly limit the further raising of developed sensor impact resistance.
Summary of the invention
The shortcoming of prior art in view of the above, one is the object of the present invention is to provide to depart from high strength cantilever beam structure and the preparation method in (111) silicon chip cleavage crystal orientation, for solve the cleavage surface being monocrystalline silicon piece due to the cross section of cantilever beam in prior art cause described cantilever beam shock resistance or tensile resistance poor, the problem easily ruptured when being subject to greater impact.
For achieving the above object and other relevant objects, the invention provides the high strength cantilever beam structure that one departs from (111) silicon chip cleavage crystal orientation, described in depart from (111) silicon chip cleavage crystal orientation high strength cantilever beam structure at least comprise: (111) monocrystalline silicon piece; At least one cantilever beam, described cantilever beam is distributed on described (111) monocrystalline silicon piece along specific crystal orientation, makes the cross section of described cantilever beam depart from the cleavage surface of described (111) monocrystalline silicon piece.
Preferably, described cantilever beam axis along its length and <211> crystal orientation have certain angle α.
Preferably, the scope of described angle α is: 37 °≤α≤43 °.
Preferably, the size of described angle α is 40 °.
Preferably, the shape of cross section of described cantilever beam is rectangle.
Preferably, described cantilever beam is multiple, and described multiple cantilever beam is integrated in the same surface of described monocrystalline silicon piece.
The present invention also provides one to depart from the preparation method of the high strength cantilever beam structure in (111) silicon chip cleavage crystal orientation, comprises the following steps:
1) one (111) monocrystalline silicon piece is provided;
2) silica passivation protection layer is made in described (111) monocrystalline silicon piece front; Apply photoresist on described silica passivation protection layer surface and make cantilever beam figure by lithography; Described cantilever beam figure axis along its length and <211> crystal orientation have certain angle α, with the cleavage surface making the cantilever beam of follow-up formation longitudinal section along its length depart from described (111) monocrystalline silicon piece;
3) utilize silicon etching equipment to etch release window, the degree of depth of described release window is the thickness of described cantilever beam;
4) in described release window, passivating material is deposited as side wall passivation protective layer;
5) utilize reactive ion etching process to remove the passivation protection layer of described release bottom of window, and expose the monocrystalline silicon of described release bottom of window; And then the monocrystalline silicon utilizing silicon deep reaction ion etch process to continue to expose described in etching is downwards as the sacrifice layer of next step anisotropic wet corrosion release cantilever beam;
6) utilize wet-etching technology from (111) monocrystalline silicon piece described in the lateral encroaching of described (111) monocrystalline silicon piece front, discharge described cantilever beam.
Preferably, in step 2) in, utilize thermal oxidation technology to make described silica passivation protection layer in described (111) monocrystalline silicon piece front.
Preferably, the scope of described angle α is: 37 °≤α≤43 °.
Preferably, in step 4) in, the method utilizing LPCVD technique to deposit low stress SiNx and TEOS silica successively makes side wall passivation protective layer.
As mentioned above, high strength cantilever beam structure and the preparation method departing from (111) silicon chip cleavage crystal orientation of the present invention, there is following beneficial effect: cantilever beam is arranged in (111) monocrystalline silicon piece mechanical characteristic preferably on crystal orientation (that is: between cantilever beam axis along its length and <211> crystal orientation, angle is 37 ° ~ 43 °), this just makes the cross section of cantilever beam not only avoid monocrystalline silicon piece natural cleavage plane (111) crystal face, and make cantilever beam obtain more excellent mechanical characteristic along on institute's arragement direction, substantially increase impact resistance.In cantilever beam manufacture craft, the present invention combines (111) silicon chip anisotropic wet etching characteristic dexterously, realize from cantilever beam both sides root lateral encroaching release cantilever beam suspension structure, the integrated one side achieving cantilever beam based single crystal silicon substrate makes.Relative to traditional cantilever beam structure, the present invention not only substantially increases the impact resistance of single-crystal silicon cantilever beam, and cantilever beam low cost, small size can be realized, technique is simple and produce in enormous quantities.The present invention can be applicable to high-range acceleration transducer and makes, and has huge application prospect in Industry Control, military field.
Accompanying drawing explanation
Fig. 1 is shown as the three-dimensional structure schematic diagram departing from the high strength cantilever beam structure in (111) silicon chip cleavage crystal orientation of the present invention.
Fig. 2 is shown as the schematic cross-section of high strength cantilever beam structure three-dimensional structure along cantilever beam cross section departing from (111) silicon chip cleavage crystal orientation of the present invention.
Fig. 3 is shown as the flow chart departing from the preparation method of the high strength cantilever beam structure in (111) silicon chip cleavage crystal orientation of the present invention.
Fig. 4 to Fig. 8 is shown as the vertical section structure schematic diagram departing from each step of preparation method of the high strength cantilever beam structure in (111) silicon chip cleavage crystal orientation of the present invention.Wherein Fig. 4 is for providing (111) monocrystalline silicon piece; Fig. 5 is dry etching definition cantilever beam structure thickness; Fig. 6 is the protection of cantilever beam sidewall passivation layer; Fig. 7 is dry etching cantilever beam release gap; Fig. 8 is wet etching release cantilever beam structure.
Element numbers explanation
1 cantilever beam
The cross section of 11 cantilever beams
Movable gap in the responsive direction of motion of 2 cantilever beams
3 is vertical with the movable gap in the cantilever beam sensitivity direction of motion
4 (111) monocrystalline silicon pieces
5 silica passivation protection layers
6 low stress SiNxes
7 TEOS silica
8 release windows
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this description can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by detailed description of the invention different in addition, and the every details in this description also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to figure and refer to Fig. 1 to Fig. 8.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, though only show the assembly relevant with the present invention in diagram but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Embodiment one
Refer to Fig. 1 to Fig. 2, the invention provides the high strength cantilever beam structure that one departs from (111) silicon chip cleavage crystal orientation, described in depart from (111) silicon chip cleavage crystal orientation high strength cantilever beam structure at least comprise: (111) monocrystalline silicon piece 4; At least one cantilever beam 1, described cantilever beam 1 is distributed on described (111) monocrystalline silicon piece 4 along specific crystal orientation, makes the cross section 11 of described cantilever beam 1 depart from the cleavage surface of described (111) monocrystalline silicon piece 4.The cross section 11 of described cantilever beam 1 is two end faces perpendicular to described cantilever beam 1 length direction.
Concrete, the cross section of described cantilever beam 1 is rectangle.
Concrete, the sensitive direction of described cantilever beam 1 is in-plane moving direction, described cantilever beam 1 one end is clamped on described (111) monocrystalline silicon piece 4, namely has the movable gap 2 in the responsive direction of motion in the both sides of described cantilever beam 1, has perpendicular to the movable gap 3 in the responsive direction of motion in the below of described cantilever beam 1.Inner owing to being directly embedded in described (111) monocrystalline silicon piece 4 perpendicular to the movable gap 3 in the responsive direction of motion of cantilever beam, therefore whole described cantilever beam 1 can be formed by single silicon-chip monohedron micromachining processing by single (111) monocrystalline silicon piece, does not need by traditional double-side technology and silicon-silicon or silicon on glass bonding structure.
Concrete, the quantity of described cantilever beam 1 can be designed to one or multiple as required, preferably, in the present embodiment, described cantilever beam 1 is multiple, described multiple cantilever beam 1 is the same surface that the integrated one side manufacture craft of based single crystal silicon chip is integrated in described (111) monocrystalline silicon piece 4, and described multiple cantilever beam 1 is arranged in the same surface of described (111) monocrystalline silicon piece 4 abreast.
Concrete, cleavage surface due to described (111) monocrystalline silicon piece 4 is (111) face, in the present embodiment, between described cantilever beam 1 axis along its length and <211> crystal orientation (or main trimming of described (111) monocrystalline silicon piece 4), there is certain angle α.Due to when described angle α equals 0 ° or 60 °, the cross section 11 of described cantilever beam 1 is cleavage surface (111) face of described (111) monocrystalline silicon piece 4, so the scope of described angle α should be 0 ° of < α < 60 °.Described cantilever beam 1 is when theoretical limit shock resistance height of the fall is 45cm, namely when the impact acceleration that described cantilever beam 1 bears is 1.2 ten thousand g, in certain angular range, along with described angle α increases gradually, the fracture probability of described cantilever beam 1 reduces gradually, when described angle α reaches certain numerical value, the fracture probability of described cantilever beam 1 reaches minimum; Along with the further increase of described angle α, described fracture probability presents again the trend increased gradually, such as when the size of described angle α is 0 °, the fracture probability of described cantilever beam 1 is 72.4%; When the size of described angle α is 15 °, the fracture probability of described cantilever beam 1 is 44.8%; When the size of described angle α is 30 °, the fracture probability of described cantilever beam 1 is 20.7%; When the size of described angle α is 40 °, the fracture probability of described cantilever beam 1 is 24.1%; When the size of described angle α is 50 °, the fracture probability of described cantilever beam 1 is 37.9%; When the size of described angle α is 60 °, the fracture probability of described cantilever beam 1 is 75.9%.It can thus be appreciated that when the size of described angle α is 30 °, the impact resistance of described cantilever beam 1 is best, takes second place when the size of described angle α is 40 °.But when the size due to described angle α is 30 °, the side, both sides of described cantilever beam 1 is (111) face, be unfavorable for the corrosion release of described cantilever beam 1, and increased gradually again by the fracture probability that 40 ° increase described cantilever beam 1 gradually along with angle α, therefore, the above analysis result in conjunction with the realizability of described cantilever beam 1, preferably, the scope of described angle α is: 37 °≤α≤43 °; More preferably, the size of described angle α is 40 °.By bibliography: Donghun Kwak, Jpngpal Kim, Sangjun Park, Hyoungho Ko and Dong-II Cho, Why is (111) silicon a better mechanical material for MEMS:Torsion case, ASME2003,2003:259-264 can know by inference, not only monocrystalline silicon mechanical property is best for the described cantilever beam 1 of arranging along this crystal orientation, and due to the cross section 11 of described cantilever beam 1 be not (111) cleavage surface of described (111) monocrystalline silicon piece 4, therefore impact resistance is the strongest.In addition, the both sides sidewall of the described cantilever beam 1 of arranging along this crystal orientation is not all (111) crystal faces, and the upper and lower surface of described cantilever beam 1 is (111) crystal face, by silicon chip anisotropic wet etching characteristic, the described cantilever beam 1 of selective release can be carried out easily from described cantilever beam 1 both sides root, this just makes the inside being directly embedded in described (111) monocrystalline silicon piece 4 perpendicular to the movable gap 3 in the responsive direction of motion of cantilever beam, avoids silicon-silicon or silicon on glass bonding structure that conventional cantilever beam adopts.Being embedded in the size perpendicular to the movable gap 3 in the responsive direction of motion of cantilever beam of described (111) monocrystalline silicon piece 4 inside by adjusting described cantilever beam 1, effectively can suppressing intersecting axle signal disturbing on vertical cantilever sensitive direction.
Concrete, in the present embodiment, the length of described cantilever beam 1 is 380 μm, and thickness is 50 μm, and width is 18 μm; But the size of described cantilever beam 1 is not limited in this, the cantilever beam with different length, thickness and width can be designed according to the actual needs.
Concrete, because piezoresistance coefficient size and crystal orientation in described (111) monocrystalline silicon piece are arranged irrelevant, wherein longitudinal piezoresistance coefficient size is π 44/2, and horizontal piezoresistance coefficient size is-π 44/6.Therefore, according to piezoresistance coefficient characteristic in above-mentioned (111) silicon chip, described cantilever beam 1 of the present invention can produce the power sensitive high-strength impact-resistant acceleration transducer applying different occasion.
Mainly utilize the difference of common (111) monocrystalline silicon piece single crystal silicon material mechanical characteristic on different crystal orientations in the present embodiment, select the position, crystal orientation of described cantilever beam place monocrystalline silicon impact strength optimum.On this basis, in order to this high strength cantilever beam structure along the arrangement of optimum mechanics crystal orientation that the present embodiment provides can be realized, the structure that the present embodiment also needs (110) crystal face and (111) crystal face in abundant combination (111) monocrystalline silicon piece exclusive and crystal face distribution mode, then the corrosion of MEMS micro fabrication techniques neutral and alkali anisotropic wet is relied on, complete from cantilever beam root both sides etching release cantilever beam, achieve the single silicon-chip monohedron silicon micro mechanical making of cantilever beam and the integrated structure of cantilever beam and monocrystalline substrate.Adopt the two-sided processing of single silicon-chip in conjunction with many wafer bondings technique relative to tradition, or adopt expensive soi wafer to realize the single-crystal silicon cantilever girder construction of single silicon-chip single-sided process, the chip size that the monocrystalline silicon integration high strength cantilever beam structure that the present embodiment departs from cleavage crystal orientation special angle based on (111) silicon chip not only reduces greatly, reduce cost of manufacture, the more important thing is and provide a high strength cantilever beam structure by for high-strength impact-resistant single-crystal silicon cantilever beam.
Embodiment two
Refer to Fig. 3 to Fig. 8, the present invention also provides one to depart from the preparation method of the high strength cantilever beam structure in (111) silicon chip cleavage crystal orientation, comprises the following steps:
1) one (111) monocrystalline silicon piece 4 is provided;
2) silica passivation protection layer 5 is made in described (111) monocrystalline silicon piece 4 front; Apply photoresist on described silica passivation protection layer 5 surface and make cantilever beam figure by lithography; Described cantilever beam figure axis along its length and <211> crystal orientation have certain angle α, with the cleavage surface making the cantilever beam of follow-up formation longitudinal section along its length depart from described (111) monocrystalline silicon piece;
3) utilize silicon etching equipment to etch release window 8, the degree of depth of described release window 8 is the thickness of described cantilever beam;
4) in described release window 8, passivating material is deposited as side wall passivation protective layer;
5) utilize reactive ion etching process to remove passivation protection layer bottom described release window 8, and expose the monocrystalline silicon of described release bottom of window; And then the monocrystalline silicon utilizing silicon deep reaction ion etch process to continue to expose described in etching is downwards as the sacrifice layer of next step anisotropic wet corrosion release cantilever beam;
6) utilize wet-etching technology from (111) monocrystalline silicon piece 4 described in the lateral encroaching of described (111) monocrystalline silicon piece front, discharge described cantilever beam.
In step 1) in, refer to the S1 step in Fig. 3 and Fig. 4, one (111) monocrystalline silicon piece 4 is provided.Described (111) monocrystalline silicon piece 4 is the monocrystalline silicon piece of single-sided polishing or twin polishing, and thickness is 450 μm, and axle cuts 0 ± 0.1 ° partially.
In step 2) in, refer to the S2 step in Fig. 3, make silica passivation protection layer 5 in described (111) monocrystalline silicon piece 4 front; Apply photoresist (not shown) on described silica passivation protection layer 5 surface and make cantilever beam figure by lithography; Described cantilever beam figure axis along its length and <211> crystal orientation (or main trimming of described (111) monocrystalline silicon piece 4) have certain angle α, with the cleavage surface making the cantilever beam of follow-up formation longitudinal section along its length depart from described (111) monocrystalline silicon piece.
Concrete, utilize thermal oxidation technology to form layer of silicon dioxide passivation protection layer 5 in the front of described (111) monocrystalline silicon piece 4, the thickness of described silica passivation protection layer 5 is 2 μm.
Concrete, the scope of described angle α is: 37 °≤α≤43 °, and preferably, in the present embodiment, the size of described angle α is 40 °.
In step 3) in, refer to the S3 step in Fig. 3 and figure, 5, utilize silicon etching equipment to etch release window 8, the degree of depth of described release window 8 is the thickness of described cantilever beam.
Concrete, reactive ion etching equipment (RIE) is utilized to etch away the silicon dioxide passivation layer covered above cantilever beam figure, then use pasc reaction ion etching equipment (DRIE) under photoresist mask, etch release window 8, the degree of depth of described release window 8 is the thickness of described cantilever beam, finally removes the photoresist covering described (111) monocrystalline silicon piece 4 surface.
Concrete, the thickness of described cantilever beam is 50 μm.
In step 4) in, refer to the S4 step in Fig. 3 and Fig. 6, in described release window 8, deposit passivating material as side wall passivation protective layer.
Concrete, the method utilizing low-pressure chemical vapor deposition (LPCVD) technique to deposit low stress SiNx 6 and TEOS (ethyl orthosilicate) silica 7 successively in described release window 8 makes side wall passivation protective layer.The thickness of described low stress SiNx 6 and the thickness of described TEOS silica 7 are 0.2 μm.
In step 5) in, refer to the S5 step in Fig. 3 and Fig. 7, utilize reactive ion etching process to remove passivation protection layer bottom described release window 8, and expose the monocrystalline silicon of described release bottom of window; And then the monocrystalline silicon utilizing silicon deep reaction ion etch process to continue to expose described in etching is downwards as the sacrifice layer of next step anisotropic wet corrosion release cantilever beam.
Concrete, utilize RIE equipment to etch the passivation protection layer be positioned at bottom described release window 8, the passivation protection layer of described release window 8 both sides is not etched in the process of etching; And then utilize DRIE to etch exposed monocrystalline silicon out bottom described release window 8, etch the sacrifice gap of certain degree of depth as wet method release cantilever beam structure.In the present embodiment, the degree of depth continuing etching is downwards 2.0 μm, and the degree of depth of namely sacrificing gap is 2.0 μm.
In step 6) in, refer to S6 step and Fig. 8 of Fig. 3, utilize wet-etching technology from (111) monocrystalline silicon piece 4 described in the lateral encroaching of described (111) monocrystalline silicon piece front, discharge described cantilever beam.
Concrete, utilize KOH (or TMAH) etchant solution from described (111) monocrystalline silicon piece 4 of bottom transverse corrosion discharging window 8 described in the front (i.e. the front of cantilever beam) of described (111) monocrystalline silicon piece 4, cantilever beam both sides, the described cantilever beam of final release.Preferably, described wet etching solution is for being heated to 30 DEG C ~ 70 DEG C, and mass percent is the KOH solution of 30% ~ 50%; More preferably, in the present embodiment, described anisotropic etchant solution is for being heated to 50 DEG C, and mass percent is the KOH solution of 40%.
In sum, the invention provides high strength cantilever beam structure and preparation method that one departs from (111) silicon chip cleavage crystal orientation, mainly utilize the difference of common (111) monocrystalline silicon piece single crystal silicon material mechanical characteristic on different crystal orientations, select the position, crystal orientation of described cantilever beam place monocrystalline silicon impact strength optimum.On this basis, in order to this high strength cantilever beam structure along the arrangement of optimum mechanics crystal orientation that the present embodiment provides can be realized, also fully combine the structure that in (111) monocrystalline silicon piece, (110) crystal face is exclusive with (111) crystal face and crystal face distribution mode, then the corrosion of MEMS micro fabrication techniques neutral and alkali anisotropic wet is relied on, complete from cantilever beam root both sides etching release cantilever beam, achieve the single silicon-chip monohedron silicon micro mechanical making of cantilever beam and the integrated structure of cantilever beam and monocrystalline substrate.Adopt the two-sided processing of single silicon-chip in conjunction with many wafer bondings technique relative to tradition, or adopt expensive soi wafer to realize the single-crystal silicon cantilever girder construction of single silicon-chip single-sided process, the chip size that the monocrystalline silicon integration high strength cantilever beam structure departing from cleavage crystal orientation special angle based on (111) silicon chip not only reduces greatly, reduce cost of manufacture, the more important thing is and provide a high strength cantilever beam structure by for high-strength impact-resistant single-crystal silicon cantilever beam.The invention solves the bottleneck problem that single-crystal silicon cantilever beam impact strength is in the past difficult to improve further.The inertial sensor development of high range can be widely used in, have technique simple and compatible strong, cost of manufacture is low, be applicable to the feature produced in enormous quantities, have great application prospect in industrial automatic control, biologic medical and military field.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. depart from the high strength cantilever beam structure in (111) silicon chip cleavage crystal orientation, it is characterized in that, described in depart from (111) silicon chip cleavage crystal orientation high strength cantilever beam structure comprise:
(111) monocrystalline silicon piece;
At least one cantilever beam, described cantilever beam is distributed on described (111) monocrystalline silicon piece along specific crystal orientation, makes the cross section of described cantilever beam depart from the cleavage surface of described (111) monocrystalline silicon piece.
2. the high strength cantilever beam structure departing from (111) silicon chip cleavage crystal orientation according to claim 1, is characterized in that: described cantilever beam axis along its length and <211> crystal orientation have certain angle α.
3. the high strength cantilever beam structure departing from (111) silicon chip cleavage crystal orientation according to claim 2, is characterized in that: the scope of described angle α is: 37 °≤α≤43 °.
4. the high strength cantilever beam structure departing from (111) silicon chip cleavage crystal orientation according to claim 3, is characterized in that: the size of described angle α is 40 °.
5. the high strength cantilever beam structure departing from (111) silicon chip cleavage crystal orientation according to claim 1, is characterized in that: the shape of cross section of described cantilever beam is rectangle.
6. the high strength cantilever beam structure departing from (111) silicon chip cleavage crystal orientation according to claim 1, is characterized in that: described cantilever beam is multiple, and described multiple cantilever beam is integrated in the same surface of described monocrystalline silicon piece.
7. depart from a preparation method for the high strength cantilever beam structure in (111) silicon chip cleavage crystal orientation, it is characterized in that: comprise the following steps:
1) one (111) monocrystalline silicon piece is provided;
2) silica passivation protection layer is made in described (111) monocrystalline silicon piece front; Make cantilever beam figure by lithography; Described cantilever beam figure axis along its length and <211> crystal orientation have certain angle α, with the cleavage surface making the cantilever beam of follow-up formation longitudinal section along its length depart from described (111) monocrystalline silicon piece;
3) utilize silicon etching equipment to etch release window, the degree of depth of described release window is the thickness of described cantilever beam;
4) in described release window, passivating material is deposited as side wall passivation protective layer;
5) utilize reactive ion etching process to remove the passivation protection layer of described release bottom of window, and expose the monocrystalline silicon of described release bottom of window; And then the monocrystalline silicon utilizing silicon deep reaction ion etch process to continue to expose described in etching is downwards as the sacrifice layer of next step anisotropic wet corrosion release cantilever beam;
6) utilize wet-etching technology from (111) monocrystalline silicon piece described in the lateral encroaching of described (111) monocrystalline silicon piece front, discharge described cantilever beam.
8. the preparation method departing from the high strength cantilever beam structure in (111) silicon chip cleavage crystal orientation according to claim 7; it is characterized in that: in step 2) in, utilize thermal oxidation technology to make described silica passivation protection layer in described (111) monocrystalline silicon piece front.
9. the preparation method departing from the high strength cantilever beam structure in (111) silicon chip cleavage crystal orientation according to claim 7, is characterized in that: the scope of described angle α is: 37 °≤α≤43 °.
10. the preparation method departing from the high strength cantilever beam structure in (111) silicon chip cleavage crystal orientation according to claim 7; it is characterized in that: in step 4) in, the method utilizing LPCVD technique to deposit low stress SiNx and TEOS silica successively makes side wall passivation protective layer.
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