CN104425237B - Substrate lithographic method - Google Patents
Substrate lithographic method Download PDFInfo
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- CN104425237B CN104425237B CN201310364428.XA CN201310364428A CN104425237B CN 104425237 B CN104425237 B CN 104425237B CN 201310364428 A CN201310364428 A CN 201310364428A CN 104425237 B CN104425237 B CN 104425237B
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- 239000000758 substrate Substances 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 title claims abstract description 79
- 238000005530 etching Methods 0.000 claims abstract description 95
- 238000006243 chemical reaction Methods 0.000 claims abstract description 48
- 230000005284 excitation Effects 0.000 claims abstract description 35
- 230000007704 transition Effects 0.000 claims description 64
- 230000008569 process Effects 0.000 claims description 25
- 230000006641 stabilisation Effects 0.000 claims description 18
- 238000011105 stabilization Methods 0.000 claims description 18
- 239000007858 starting material Substances 0.000 claims description 11
- 230000003247 decreasing effect Effects 0.000 claims description 8
- 230000003628 erosive effect Effects 0.000 claims description 3
- 230000008439 repair process Effects 0.000 claims description 3
- 239000008187 granular material Substances 0.000 abstract description 23
- 230000007547 defect Effects 0.000 abstract description 11
- 239000007789 gas Substances 0.000 description 25
- 229910015844 BCl3 Inorganic materials 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 11
- 230000006978 adaptation Effects 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 101150026505 Ramp1 gene Proteins 0.000 description 2
- 101150083298 Ramp2 gene Proteins 0.000 description 2
- 101150024504 Ramp3 gene Proteins 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000013618 particulate matter Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Substrate lithographic method provided by the invention, it comprises the following steps：Main etch step, etching gas are passed through into reaction chamber, and open excitation power supply and grid bias power supply, to etch the base profile for forming figure on substrate；Over etching step, continues to be passed through etching gas into reaction chamber, and keeps excitation power supply and grid bias power supply to open, and to modify figure pattern, reaches technological requirement.Substrate lithographic method provided by the invention, it can reduce spheric granules thing during whole technique carries out and drop to quantity on substrate, the defects of so as to reduce substrate figure pattern.
Description
Technical field
The present invention relates to semiconductor applications, more particularly to a kind of substrate lithographic method.
Background technology
At present, using inductively coupled plasma（Inductively Coupled Plasma, hereinafter referred to as ICP）If
Standby performed etching to substrates such as Sapphire Substrates mainly includes the following steps that：
First current stabilization step（Stable1）, during for ensureing follow-up main etch step starter, it is indoor to be passed through reaction chamber
Air-flow reaches state that is sufficient, stablizing；
Main etch step（Main Etch）, for etching substrate, to form the base profile of figure；
Second current stabilization step（Stable2）, its effect is identical with First Transition step；
Over etching step（Over Etch）, for modifying figure pattern, so that its size and dimension reaches technological requirement.
During above-mentioned technique is carried out, substantial amounts of etch by-products can be produced in reaction chamber, these etchings are secondary
A part for product is attached on chamber inner wall and component surface, and is got deeper with the accumulation of process time, in thickness
When reaching a certain level, the etch by-products of deposition form bulky grain because rupture comes off（Diameter is generally more than 10 μm）, this
A little bulky grains once drop and etch mask can be formed on substrate, cause to occur that substrate etching is insufficient, substrate pattern is produced and lacked
The problems such as falling into.In addition, some etch by-products gradually can agglomerate to form spheric granules thing（Diameter is generally less than 5 μm）,
As shown in Figure 1A, spheric granules thing is suspended in plasma atmosphere, and is gradually grown up, and is also resulted in once dropping on substrate
The etch topography of substrate produces defect, as shown in Figure 1B.
But due to bulky grain be usually accumulate in the process time 100 it is small when more than just occur, only need regular
Craft or dry method cleaning are carried out to the chamber inner wall in reaction chamber and component surface, you can reduce the deposition of etch by-products
Amount, so as to the quantity for avoiding bulky grain from dropping.
And spheric granules thing is directed to, the above-mentioned method using craft or dry method cleaning reaction chamber does not have cleaning to imitate substantially
Fruit, and spheric granules thing can all occur substantially during each technique is carried out, and when quantity is more can reach thousands of, greatly
The spheric granules thing of amount once drops may result in serious pattern defect on substrate.
The content of the invention
It is contemplated that at least solve one of technical problem existing in the prior art, it is proposed that a kind of substrate etching side
Method, it can reduce spheric granules thing during whole technique carries out and drop to quantity on substrate, so as to reduce
The defects of substrate figure pattern.
A kind of substrate lithographic method is provided to achieve the object of the present invention, is comprised the following steps：
Main etch step, etching gas are passed through into reaction chamber, and open excitation power supply and grid bias power supply, with substrate
It is upper to etch the base profile for forming figure；
Over etching step, continues to be passed through etching gas into reaction chamber, and keeps excitation power supply and grid bias power supply to open,
To modify figure pattern, technological requirement is reached.
Wherein, it is further comprising the steps of after the main etch step is completed, and before over etching step is carried out：
Transition of mechanical impedance step, by the impedance value needed for the main etch step, the over etching is increased to pre-defined rule
Impedance value needed for step；
Wherein, the impedance value is for matching the output impedance of the excitation power supply and the input impedance of matching network
The predefined impedance value of variable impedance element in adaptation.
Wherein, the pre-defined rule is：At interval of the scheduled time, with the predetermined amplitude increase once impedance value, and altogether
Increase is at least twice.
Wherein, it is further comprising the steps of after the main etch step is completed, and before over etching step is carried out：
Flow transition step, by the flow value needed for the main etch step, is decreased to the over etching with pre-defined rule
Flow value needed for step；Wherein, the flow value is the predetermined amount of flow value for the etching gas being passed through to reaction chamber.
Wherein, the pre-defined rule is：At interval of the scheduled time, the once flow value is reduced with predetermined amplitude, and altogether
It is reduced at least twice.
Wherein, it is further comprising the steps of after the main etch step is completed, and before over etching step is carried out：
Pressure transition step, by the pressure value needed for the main etch step, is decreased to the over etching with pre-defined rule
Pressure value needed for step；Wherein, the pressure value is the scheduled pressure value of the chamber pressure of the reaction chamber.
Wherein, the pre-defined rule is：At interval of the scheduled time, the once pressure value is reduced with predetermined amplitude, and altogether
It is reduced at least twice.
Wherein, it is further comprising the steps of after the main etch step is completed, and before over etching step is carried out：
Transition step is biased, by the substrate bias power value needed for the main etch step, the mistake is increased to pre-defined rule
Substrate bias power value needed for etch step；Wherein, the substrate bias power value is the predetermined bias performance number of grid bias power supply.
Wherein, the pre-defined rule is：At interval of the scheduled time, the once substrate bias power value is increased with predetermined amplitude,
And increase altogether at least twice.
Wherein, it is further comprising the steps of before the main etch step is carried out：
First current stabilization step, etching gas are passed through into reaction chamber, during ensureing follow-up main etch step starter, are led to
Enter the indoor air-flow of reaction chamber and reach state that is sufficient, stablizing.
As another technical solution, the present invention also provides a kind of substrate lithographic method to comprise the following steps：
Main etch step, etching gas are passed through into reaction chamber, and open excitation power supply and grid bias power supply, with substrate
It is upper to etch the base profile for forming figure；
Transition step is encouraged, closes grid bias power supply, and by the exciting power of the excitation power supply, is decreased to pre-defined rule
Zero；
Over etching step, continues to be passed through etching gas into reaction chamber, and opens excitation power supply and grid bias power supply, to repair
Figure pattern is adornd, reaches technological requirement.
Wherein, it is further comprising the steps of before the main etch step is carried out：
First current stabilization step, etching gas are passed through into reaction chamber, during ensureing follow-up main etch step starter, are led to
Enter the indoor air-flow of reaction chamber and reach state that is sufficient, stablizing.
Wherein, after the excitation transition step is completed, and before over etching step is carried out, following step is further included
Suddenly：
Second current stabilization step, etching gas are passed through into reaction chamber, during ensureing follow-up over etching step starter, are led to
Enter the indoor air-flow of reaction chamber and reach state that is sufficient, stablizing.
The invention has the advantages that：
Substrate lithographic method provided by the invention, it after main etch step is completed by directly carrying out over etching step
Suddenly, this is the same as in the prior art in main etch step compared with being provided with current stabilization step between over etching step, can entirely carve
Plasma is set to be in glow discharge state all the time during erosion, so that most of spheric granules things（It is negatively charged）In plasma
Keep suspending in body atmosphere, until complete whole etching technics, number on substrate is dropped to so as to reduce spheric granules thing
The defects of measuring, and then substrate figure pattern can be reduced.Further, since substrate lithographic method provided by the invention eliminates current stabilization
Step, this can improve process efficiency, so as to improve production capacity.
Substrate lithographic method provided by the invention, it between main etch step and over etching step by being provided with excitation
Transition step, i.e. grid bias power supply is closed, and by the exciting power of excitation power supply, is decreased to zero with pre-defined rule, this and existing skill
Excitation power supply is directly closed in art to compare, and spheric granules thing can be made slowly to fall, rather than the wink closed in excitation power supply
Between concentrate and drop, the spheric granules thing slowly to fall can discharge reaction chamber with air-flow, fall so as to reduce spheric granules thing
The defects of falling on the quantity on each substrate, and then substrate figure pattern can be reduced.
Brief description of the drawings
Figure 1A is the electron-microscope scanning figure of spheric granules thing；
Figure 1B is the electron-microscope scanning figure of substrate figure pattern；
Fig. 2 is a kind of FB(flow block) of substrate lithographic method provided in an embodiment of the present invention；
Fig. 3 is the sequence diagram of exciting power in a kind of existing substrate lithographic method；
Fig. 4 is the sequence diagram of exciting power in experiment one；
Fig. 5 is the sequence diagram of exciting power in experiment two；And
Fig. 6 is the FB(flow block) of another substrate lithographic method provided in an embodiment of the present invention.
Embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The substrate lithographic method of offer is described in detail.
Fig. 2 is a kind of FB(flow block) for substrate lithographic method that inventive embodiments provide.Referring to Fig. 2, substrate etching side
Method comprises the following steps：
Main etch step, etching gas are passed through into reaction chamber, and open excitation power supply and grid bias power supply, with substrate
It is upper to etch the base profile for forming figure；
Over etching step, continues to be passed through etching gas into reaction chamber, and keeps excitation power supply and grid bias power supply to open,
To modify figure pattern, technological requirement is reached.
The principle of substrate lithographic method provided in an embodiment of the present invention is described in detail with reference to the prior art.Tool
Body, Fig. 3 is the sequence diagram of exciting power in a kind of existing substrate lithographic method.As shown in figure 3, since existing substrate etches
Method is provided with current stabilization step between main etch step and over etching step, to ensure follow-up over etching step starter
When, it is passed through the indoor air-flow of reaction chamber and reaches state that is sufficient, stablizing, which needs to close excitation power supply and bias plasma
Source, is found through experiments that, due to excitation power supply exciting power at the end of main etch step moment be down to zero, cause reaction chamber
The spheric granules thing of indoor generation drops on substrate, so as to cause the image pattern of substrate to produce defect.In contrast, this hair
The substrate lithographic method that bright embodiment provides, it after main etch step is completed by directly carrying out over etching step, i.e. deletes
Except above-mentioned current stabilization step, excitation power supply and grid bias power supply are not closed, plasma can be made to locate all the time in whole etching process
In glow discharge state, so that most of spheric granules things（It is negatively charged）Keep suspending in plasma atmosphere, until complete
Into whole etching technics, quantity on substrate is dropped to so as to reduce spheric granules thing, and then substrate figure can be reduced
The defects of pattern.Further, since substrate lithographic method provided by the invention eliminates current stabilization step, this can improve technique effect
Rate, so as to improve production capacity.
In practical applications, in main etch step, etching gas can use BCl3（Boron chloride）Gas, by BCl3
The plasma that gas is formed can not only remove the oxygen of substrate surface, can also etch substrate by chemical reaction mechanism
Al2O3Layer, while by BCl3BCl ion pairs substrate in plasma carries out physical bombardment.Preferably, can also etch
The carbon fluorine type gas such as CH4 or CHF3 are mixed in gas as auxiliary gas.
Preferably, it is further comprising the steps of before above-mentioned main etch step is carried out：Current stabilization step, into reaction chamber
Etching gas are passed through, during ensureing follow-up main etch step starter, the indoor air-flow of reaction chamber is passed through and reaches sufficient, stablizes
State.
Preferably, substrate lithographic method provided in an embodiment of the present invention can use following technological parameters：
Current stabilization step, its technological parameter are：Chamber pressure is 3mT；Exciting power is 0W；Substrate bias power is 0W；BCl3's
Flow is 110sccm；CH4Flow be 5sccm；Impedance value is 18；Technological temperature is 5 DEG C；Process time is 10s.
Main etch step, its technological parameter are：Chamber pressure is 3mT；Exciting power is 2400W；Substrate bias power is 150W；
BCl3Flow be 110sccm；CH4Flow be 5sccm；Impedance value is 18；Technological temperature is 5 DEG C；Process time is 1780s.
Over etching step, its technological parameter are：Chamber pressure is 1.5mT；Exciting power is 2000W；Substrate bias power is
700W；BCl3Flow be 45sccm；Impedance value is 40；Technological temperature is 5 DEG C；Process time is 820s.
So-called impedance value, refers to the predefined impedance value of the variable impedance element in adaptation, wherein, adaptation is used to match
The output impedance of excitation power supply and the input impedance of matching network（That is, adaptation direct impedance and the radio frequency line of adaptation rear end
The equivalent impedance of circle and reaction chamber）, to ensure that the exciting power of excitation power supply output can be delivered to for swashing without loss
The indoor etching gas of reaction chamber are sent out to be formed in the radio-frequency coil of plasma.
Preferably, it can correspond to the central area of reaction chamber and fringe region set interior radio-frequency coil and penetrates outside respectively
Frequency coil, and using the adaptation with two output terminals, and make two output terminals respectively with interior radio-frequency coil and outer radio frequency line
Circle is electrically connected, and in this case, by adjusting the impedance value of the variable impedance element in adaptation, can adjust interior respectively penetrate
Current ratio in frequency coil and outer radio-frequency coil, so that the plasma that the central area of reaction chamber and fringe region are formed
Tend to be uniform.
Experiment one, experiment have been carried out using substrate lithographic method provided in an embodiment of the present invention and above-mentioned technological parameter below
The result shows that：By directly carrying out over etching step after main etch step is completed, with make in whole etching process etc. from
Daughter is in glow discharge state all the time, and the quantity that can be dropped to spheric granules thing on each substrate is down to 500~800
, the defects of so as to reduce substrate figure pattern to a certain extent.
Found by carrying out analysis to above-mentioned experiment one, still suffer from the reason for Part-spherical particulate matter is dropped on substrate
It is：Although above-mentioned substrate lithographic method by being in glow discharge state all the time in whole etching process plasma, can
So that spheric granules thing keeps suspending in plasma atmosphere, and still, when switching from main etch step to over etching step,
The technological parameter of flow due to the first impedance value, substrate bias power, chamber pressure and etching gas etc. occurs to change suddenly, causes
The input impedance of matching network is undergone mutation, this causes adaptation needs through after a while could hinder the input of matching network
It is anti-to be matched with the output impedance of excitation power supply, as shown in figure 4, the sequence diagram for exciting power in experiment one.As seen from the figure, when certainly
Main etch step to over etching step switch when, exciting power directly can not switch to 2000W by 2400W, but fall before to
600W or so, then gradually go up to 2000W.In this case, instantaneous reduce of exciting power can influence the steady of plasma
Qualitative, the Part-spherical particulate matter for causing to suspend drops on substrate.
In order to ensure the stability of plasma, can be set between main etch step and over etching step to establish rules in advance
Then progressively adjust the transition step of the technological parameter of the flow of the first impedance value, substrate bias power, chamber pressure and/or etching gas etc.
Suddenly, i.e. the transition step is used to progressively adjusting the process parameter value that main etch step needs into the work needed to over etching step
Skill parameter value.Also, the transition step can only individually adjust one of parameter in above-mentioned technological parameter, and other techniques
Parameter remains unchanged during transition step carries out, alternatively, multiple ginsengs in above-mentioned technological parameter can also be adjusted at the same time
Number, i.e. any one or more parameters in above-mentioned technological parameter can be selected progressively to be adjusted to over etching by transition step
The process parameter value that step needs.
Transition step is described in detail below.Specifically, if transition step only progressively adjusts impedance value, complete
It is further comprising the steps of into after main etch step, and before over etching step is carried out：
Transition of mechanical impedance step, the impedance value needed for main etch step is increased to needed for over etching step with pre-defined rule
Impedance value, which is：At interval of the scheduled time, an impedance value, and increase at least two altogether are increased with predetermined amplitude
It is secondary.For example, by taking technological parameter used by the substrate lithographic method of experiment one as an example, and transition of mechanical impedance step includes transition three times
Step, specific process parameter are as follows：
Transition step 1（Ramp1）, chamber pressure 3mT；Exciting power is 2400W；Substrate bias power is 150W；BCl3Stream
Measure as 110sccm；CH4Flow be 5sccm；Impedance value is 25；Technological temperature is 5 DEG C；Process time is 2s.
Transition step 2（Ramp2）, chamber pressure 3mT；Exciting power is 2400W；Substrate bias power is 150W；BCl3Stream
Measure as 110sccm；CH4Flow be 5sccm；Impedance value is 30；Technological temperature is 5 DEG C；Process time is 2s.
Transition step 3（Ramp3）, chamber pressure 3mT；Exciting power is 2400W；Substrate bias power is 150W；BCl3Stream
Measure as 110sccm；CH4Flow be 5sccm；Impedance value is 40；Technological temperature is 5 DEG C；Process time is 2s.
From the foregoing, it will be observed that transition step only adjusts impedance value three times, and other technological parameters remain unchanged, and adjust
Pre-defined rule be：Interval time is 2s；Impedance value is 7, by transition step 1 by the increase amplitude of main etch step to transition step 1
Increase amplitude to transition step 2 is 5 and is 10 by the increase amplitude of transition step 2 to transition step 3.By transition of mechanical impedance step by
Step increase impedance value, can be to the current ratio in the matching work of impedor and its internal radio-frequency coil and outer radio-frequency coil
Adjustment plays the role of mitigation, so as to avoid the momentary fluctuation that exciting power occurs, and then can ensure plasma
The stability of body, so that further reduction spheric granules thing drops to the quantity on substrate.
It is similar therewith, if transition step progressively adjusts flow value and pressure value at the same time, complete the main etching
After step, and before over etching step is carried out, flow transition step and pressure transition step are also carried out at the same time, i.e.,：
By the flow value and pressure value needed for main etch step, the flow needed for over etching step is decreased to pre-defined rule
Value and pressure value.Wherein, flow value is the predetermined amount of flow value for the etching gas being passed through to reaction chamber；Pressure value is reaction chamber
Chamber pressure scheduled pressure value.
For example, by taking technological parameter used by the substrate lithographic method of experiment one as an example, and transition step includes mistake three times
Step is crossed, specific process parameter is as follows：
Transition step 1（Ramp1）, chamber pressure 3mT；Exciting power is 2400W；Substrate bias power is 150W；BCl3Stream
Measure as 90sccm；Impedance value is 18；Technological temperature is 5 DEG C；Process time is 2s.
Transition step 2（Ramp2）, chamber pressure 2mT；Exciting power is 2400W；Substrate bias power is 150W；BCl3Stream
Measure as 65sccm；Impedance value is 18；Technological temperature is 5 DEG C；Process time is 2s.
Transition step 3（Ramp3）, chamber pressure 1.5mT；Exciting power is 2400W；Substrate bias power is 150W；BCl3's
Flow is 45sccm；Impedance value is 18；Technological temperature is 5 DEG C；Process time is 2s.
From the foregoing, it will be observed that transition step only adjusts air flow value and pressure value three times, and other technological parameters are kept not
Become, and the pre-defined rule adjusted is：Interval time is 2s；Air flow value by the reduction amplitude of main etch step to transition step 1 for 20,
Reduction amplitude by transition step 1 to transition step 2 is 25 and is 20 by the reduction amplitude of transition step 2 to transition step 3.Pressure value by
The reduction amplitude of main etch step to transition step 1 is 0, is 1 and by transition step 2 by the reduction amplitude of transition step 1 to transition step 2
Reduction amplitude to transition step 3 is 0.5.Progressively reduce flow by being carried out at the same time flow transition step and pressure transition step
Value and pressure value, matching work that equally can be to impedor plays the role of mitigation, so as to avoid exciting power from going out
Existing momentary fluctuation, and then can ensure the stability of plasma, so that further reducing spheric granules thing drops to substrate
On quantity.
In addition, the bias transition step for progressively adjusting substrate bias power can also be set, i.e.,：By needed for main etch step
Substrate bias power value, the substrate bias power value needed for over etching step is increased to pre-defined rule, which is bias plasma
The predetermined bias performance number in source；Alternatively, the matching work progressively adjusted arbitrarily to impedor can also be set to play abirritation
One or more technological parameters, have carried out experiment two using the substrate lithographic method of transition step below, test result indicates that：It is logical
Cross and above-mentioned transition step is added between main etch step and over etching step, exciting power is walked from main etch step to over etching
Gently stablize during rapid switching, as shown in figure 5, and the quantity that drops on each substrate of spheric granules thing be reduced to tens even
Less than ten, so that the defects of effectively reducing substrate figure pattern.
It should be noted that in the present embodiment, the pre-defined rule of transition step is by the way of progressively adjusting, still
The present invention is not limited thereto, in practical applications, can also use Serial regulation mode gradually increase or reduction one or more
A process parameter value, alternatively, other pre-defined rules can also be used, as long as the pre-defined rule can ensure the stabilization of plasma
Property.
As another technical solution, the present invention also provides a kind of substrate lithographic method, Fig. 6 provides for the embodiment of the present invention
Another substrate lithographic method FB(flow block).Referring to Fig. 6, substrate lithographic method comprises the following steps：
Main etch step, etching gas are passed through into reaction chamber, and open excitation power supply and grid bias power supply, with substrate
It is upper to etch the base profile for forming figure；
Transition step is encouraged, closes grid bias power supply, and by the exciting power of excitation power supply, is decreased to zero with pre-defined rule；
Over etching step, continues to be passed through etching gas into reaction chamber, and opens excitation power supply and grid bias power supply, to repair
Figure pattern is adornd, reaches technological requirement.
From the foregoing, it will be observed that the technical solution of the present embodiment is compared with the technical solution of above-described embodiment, its difference lies in：At this
In embodiment, without making plasma be in glow discharge state all the time in whole etching process, but in main etch step
Excitation transition step is additionally arranged between over etching step, gradually reducing the exciting power of excitation power supply to zero, this with
Excitation power supply is directly closed in the prior art to compare, and spheric granules thing can be made slowly to fall, rather than closed in excitation power supply
The moment closed concentrates and drops, and the spheric granules thing slowly to fall can discharge reaction chamber with air-flow, so as to reduce spherical
Grain thing drops to quantity on each substrate, and then the defects of substrate figure pattern can be reduced.
By taking technological parameter used by the experiment one in above-described embodiment as an example, encourage the technological parameter of transition step can be with
For：Chamber pressure is 3mT；Exciting power is 400W；Substrate bias power is 0W；BCl3Flow be 110sccm；CH4Flow be
5sccm；Impedance value is 18；Technological temperature is 5 DEG C；Process time is 1s.
Preferably, it is further comprising the steps of before main etch step is carried out：
First current stabilization step, etching gas are passed through into reaction chamber, during ensureing follow-up main etch step starter, are led to
Enter the indoor air-flow of reaction chamber and reach state that is sufficient, stablizing.
Preferably, it is further comprising the steps of after completing to encourage transition step, and before over etching step is carried out：
Second current stabilization step, etching gas are passed through into reaction chamber, during ensureing follow-up over etching step starter, are led to
Enter the indoor air-flow of reaction chamber and reach state that is sufficient, stablizing.
It is readily appreciated that, since substrate lithographic method provided in this embodiment in whole etching process without making plasma
All the time glow discharge state is in, thus it need not set the transition step in above-described embodiment, in addition, the present embodiment
Technical solution and the technical solution of above-described embodiment are similar, are not repeated to describe herein.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the present invention is not limited thereto.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (13)
1. a kind of substrate lithographic method, it is characterised in that comprise the following steps：
Main etch step, etching gas are passed through into reaction chamber, and open excitation power supply and grid bias power supply, to be carved on substrate
Erosion forms the base profile of figure；
Transition step, the process parameter value for the main etch step to be needed progressively adjust the work needed to over etching step
Skill parameter value, to ensure the stability of plasma, the process parameter value is impedance value, flow value, pressure value and bias work(
At least one of rate value；
Over etching step, continues to be passed through etching gas into reaction chamber, and keeps excitation power supply and grid bias power supply to open, to repair
Figure pattern is adornd, reaches technological requirement.
2. substrate lithographic method as claimed in claim 1, it is characterised in that
It is further comprising the steps of after the main etch step is completed, and before over etching step is carried out：
Transition of mechanical impedance step, by the impedance value needed for the main etch step, the over etching step is increased to pre-defined rule
Required impedance value；
Wherein, the impedance value is the matching for matching the output impedance of the excitation power supply and the input impedance of matching network
The predefined impedance value of variable impedance element in device.
3. substrate lithographic method as claimed in claim 2, it is characterised in that the pre-defined rule is：At interval of the scheduled time,
With the predetermined amplitude increase once impedance value, and increasing altogether at least twice.
4. substrate lithographic method as claimed in claim 1, it is characterised in that after the main etch step is completed, and
It is further comprising the steps of before carrying out over etching step：
Flow transition step, by the flow value needed for the main etch step, is decreased to the over etching step with pre-defined rule
Required flow value；
Wherein, the flow value is the predetermined amount of flow value for the etching gas being passed through to reaction chamber.
5. substrate lithographic method as claimed in claim 4, it is characterised in that the pre-defined rule is：At interval of the scheduled time,
The once flow value, and being reduced at least altogether twice is reduced with predetermined amplitude.
6. substrate lithographic method as claimed in claim 1, it is characterised in that after the main etch step is completed, and
It is further comprising the steps of before carrying out over etching step：
Pressure transition step, by the pressure value needed for the main etch step, is decreased to the over etching step with pre-defined rule
Required pressure value；
Wherein, the pressure value is the scheduled pressure value of the chamber pressure of the reaction chamber.
7. substrate lithographic method as claimed in claim 6, it is characterised in that the pre-defined rule is：At interval of the scheduled time,
The once pressure value, and being reduced at least altogether twice is reduced with predetermined amplitude.
8. substrate lithographic method as claimed in claim 1, it is characterised in that after the main etch step is completed, and
It is further comprising the steps of before carrying out over etching step：
Transition step is biased, by the substrate bias power value needed for the main etch step, the over etching is increased to pre-defined rule
Substrate bias power value needed for step；
Wherein, the substrate bias power value is the predetermined bias performance number of grid bias power supply.
9. substrate lithographic method as claimed in claim 8, it is characterised in that the pre-defined rule is：At interval of the scheduled time,
With the predetermined amplitude increase once substrate bias power value, and increasing altogether at least twice.
10. substrate lithographic method as claimed in claim 1, it is characterised in that before the main etch step is carried out, also wrap
Include following steps：
First current stabilization step, etching gas are passed through into reaction chamber, during ensureing follow-up main etch step starter, are passed through anti-
The indoor air-flow of chamber is answered to reach state that is sufficient, stablizing.
11. a kind of substrate lithographic method, it is characterised in that comprise the following steps：
Main etch step, etching gas are passed through into reaction chamber, and open excitation power supply and grid bias power supply, to be carved on substrate
Erosion forms the base profile of figure；
Transition step is encouraged, closes grid bias power supply, and the exciting power of the excitation power supply is gradually reduced to zero；
Over etching step, continues to be passed through etching gas into reaction chamber, and opens excitation power supply and grid bias power supply, to modify figure
Shape pattern, reaches technological requirement.
12. substrate lithographic method as claimed in claim 11, it is characterised in that before the main etch step is carried out, also
Comprise the following steps：
First current stabilization step, etching gas are passed through into reaction chamber, during ensureing follow-up main etch step starter, are passed through anti-
The indoor air-flow of chamber is answered to reach state that is sufficient, stablizing.
13. substrate lithographic method as claimed in claim 11, it is characterised in that after the excitation transition step is completed,
And before over etching step is carried out, it is further comprising the steps of：
Second current stabilization step, etching gas are passed through into reaction chamber, during ensureing follow-up over etching step starter, are passed through anti-
The indoor air-flow of chamber is answered to reach state that is sufficient, stablizing.
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| CN111180326B (en) * | 2019-10-28 | 2022-11-25 | 北京北方华创微电子装备有限公司 | Method for processing semiconductor wafer |
| CN112530802B (en) * | 2020-11-30 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Etching control method |
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