CN111180326B - Method for processing semiconductor wafer - Google Patents
Method for processing semiconductor wafer Download PDFInfo
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- CN111180326B CN111180326B CN201911032952.0A CN201911032952A CN111180326B CN 111180326 B CN111180326 B CN 111180326B CN 201911032952 A CN201911032952 A CN 201911032952A CN 111180326 B CN111180326 B CN 111180326B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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Abstract
A method of processing a semiconductor wafer, comprising: starting the radio frequency source to enable the radio frequency source to output first radio frequency power, and setting the chamber pressure of the process chamber as first chamber pressure; maintaining the radio frequency source to be started, and adjusting the output power of the radio frequency source to be transition radio frequency power; simultaneously, adjusting the chamber pressure to a first transition chamber pressure; enabling the radio frequency source to continuously output the transitional radio frequency power within a preset time period; simultaneously, adjusting the chamber pressure to a second transition chamber pressure; adjusting the output power of the radio frequency source to a second radio frequency power; simultaneously, adjusting the chamber pressure to the second chamber pressure; and enabling the radio frequency source to output the second radio frequency power and keeping the chamber pressure at the second chamber pressure.
Description
Technical Field
The present invention relates to the field of semiconductor processing technology, and more particularly, to a method for processing a semiconductor wafer.
Background
Various types of plasma apparatuses have been used in conventional semiconductor manufacturing processes. A widely used mode of exciting Plasma for Plasma etching apparatuses is Inductively Coupled Plasma (ICP). For a conventional ICP, a Continuous Wave (CW) Radio Frequency (RF) discharge mode is used. The discharge mode includes a stabilization step and an RF ignition step. The stabilizing step mainly adjusts the process conditions, such as introducing etching gas, controlling the pressure of the chamber, controlling the temperature of the chamber and the current proportion, and the like, and no radio frequency power is fed in the stabilizing step, so that no plasma is generated; the RF starting step is mainly to load RF power after the stabilizing step, and excite the etching gas to generate plasma to process the workpiece (such as a wafer). Since there is a steady step between the two RF initiation steps to adjust the process conditions, the plasma extinguishes in the steady step, causing particles in the chamber to fall onto the workpiece (e.g., wafer), thereby affecting the process results and etch yield.
Disclosure of Invention
The invention discloses a processing method of a semiconductor wafer, which aims to solve the problems of the background art that the process result and the etching yield are influenced by the falling of particles in a cavity onto a workpiece (such as a wafer).
According to an embodiment of the present invention, a method for processing a semiconductor wafer is disclosed, the method comprising: starting the radio frequency source to enable the radio frequency source to output first radio frequency power, and setting the chamber pressure of the process chamber as first chamber pressure; maintaining the starting of the radio frequency source, and adjusting the output power of the radio frequency source from the first radio frequency power to a transition radio frequency power, wherein the transition radio frequency power is the lowest radio frequency power for maintaining the starting; simultaneously, adjusting the chamber pressure from the first chamber pressure to a first transition chamber pressure, the first transition chamber pressure = X%/the first chamber pressure + Y%/a second chamber pressure, where X and Y are natural numbers greater than zero, and X + Y =100; enabling the radio frequency source to continuously output the transitional radio frequency power within a preset time period; simultaneously, adjusting the chamber pressure from the first transition chamber pressure to a second transition chamber pressure, the second transition chamber pressure being equal to an average of the first transition chamber pressure and the second chamber pressure; adjusting the output power of the radio frequency source from the transition radio frequency power to a second radio frequency power; simultaneously, adjusting the chamber pressure from the second transition chamber pressure to the second chamber pressure; and causing the rf source to output the second rf power and maintain the chamber pressure at the second chamber pressure.
According to an embodiment of the present invention, the first rf power is linearly adjusted to the transition rf power in a manner of setting a fixed adjustment rate or setting a fixed adjustment time; and/or linearly adjusting the transitional radio frequency power to the second radio frequency power in a mode of setting a fixed adjusting speed or setting a fixed adjusting time.
According to an embodiment of the invention, the chamber pressure is linearly regulated from the first chamber pressure to a first transition chamber pressure in a manner of setting a fixed regulation rate or setting a fixed regulation time; and/or, linearly regulating the chamber pressure from the first transition chamber pressure to a second transition chamber pressure in a manner of setting a fixed regulation rate or setting a fixed regulation time; and/or, the chamber pressure is adjusted linearly from the second transition chamber pressure to the second chamber pressure in a manner that sets a fixed adjustment rate or sets a fixed adjustment time.
According to an embodiment of the present invention, the fixed adjustment rate ranges from 800W/S to 1000W/S.
According to an embodiment of the present invention, the rf source is a pulsed rf source or a continuous wave rf source.
According to an embodiment of the present invention, the transitional rf power is 300 watts.
According to an embodiment of the invention, X is greater than Y when the first chamber pressure is greater than the second chamber pressure.
According to an embodiment of the present invention, the first reactive gas in the process chamber is adjusted to the second reactive gas and the flow rate of the first reactive gas is adjusted to the flow rate of the second reactive gas while the rf source continues to output the transitional rf power.
According to an embodiment of the present invention, while the rf source continuously outputs the transient rf power, a first current distribution ratio of the induction coil is adjusted to a transient current distribution ratio, where the transient current distribution ratio is equal to an average value of the first current distribution ratio and a second current distribution ratio; and adjusting the transitional current distribution proportion to the second current distribution proportion while adjusting the output power of the radio frequency source from the transitional radio frequency power to the second radio frequency power.
By the semiconductor processing method disclosed by the invention, the radio frequency source keeps outputting the radio frequency power during the process condition adjusting period, so that the sheath layer can be kept above the workpiece (such as a wafer) to repel particles from falling on the workpiece (such as the wafer), thereby improving the process result and improving the yield.
Drawings
FIG. 1 is a flow chart of a method of semiconductor processing according to one embodiment of the present invention.
FIG. 2 is a detailed flowchart of step 102 shown in FIG. 1 according to one embodiment of the present invention.
FIG. 3 is a detailed flowchart of step 102 shown in FIG. 1 according to another embodiment of the present invention.
FIG. 4 is a detailed flowchart of step 102 shown in FIG. 1 according to another embodiment of the present invention.
FIG. 5 is a detailed flowchart of step 102 shown in FIG. 1 according to another embodiment of the present invention.
Detailed Description
The following disclosure provides various embodiments or illustrations that can be used to implement various features of the disclosure. The specific embodiments of components and arrangements described below are provided to simplify the present disclosure. It is to be understood that such descriptions are merely illustrative and are not intended to limit the present disclosure. For example, in the description that follows, forming a first feature on or over a second feature may include certain embodiments in which the first and second features are in direct contact with each other; and may also include embodiments in which additional elements are formed between the first and second features described above, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or characters in the various embodiments. Such reuse is for brevity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Moreover, spatially relative terms, such as "under," "below," "over," "above," and the like, may be used herein to facilitate describing a relationship between one element or feature relative to another element or feature as illustrated in the figures. These spatially relative terms are intended to encompass a variety of different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
Although numerical ranges and parameters setting forth the broad scope of the application are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain standard deviations found in their respective testing measurements. As used herein, "about" generally refers to actual values within plus or minus 10%, 5%, 1%, or 0.5% of a particular value or range. Alternatively, the term "about" indicates that the actual value falls within the acceptable standard error of the mean, subject to consideration by those of ordinary skill in the art to which this application pertains. It is understood that all ranges, amounts, values and percentages used herein (e.g., to describe amounts of materials, length of time, temperature, operating conditions, quantitative ratios, and the like) are modified by the term "about" in addition to the experimental examples or unless otherwise expressly stated. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the specification and attached claims are approximations that may vary depending upon the desired properties sought to be obtained. At the very least, these numerical parameters are to be understood as meaning the number of significant digits recited and the number resulting from applying ordinary carry notation. Herein, numerical ranges are expressed from one end to the other or between the two ends; unless otherwise indicated, all numerical ranges set forth herein are inclusive of the endpoints.
In order to process a workpiece such as a wafer by using a Plasma etching apparatus using Inductively Coupled Plasma (ICP), an adjustment stage, which is called a stabilization step, is usually required. In the stabilization step, the plasma etching apparatus adjusts process conditions, such as radio frequency power, chamber pressure, types and flow rates of reaction gases, current distribution ratio, and the like, according to the process to be performed. After the process conditions are adjusted, the process enters a process stage called an RF glow starting step. In the RF ignition step, the RF source is turned on to ignite the plasma and process the workpiece (e.g., wafer) according to the process conditions adjusted in the previous stabilization step. Since the steady state between two adjacent RF ignition steps does not maintain the RF source on, a sheath is not maintained over the workpiece (e.g., wafer) to repel particles, which fall on the workpiece (e.g., wafer), resulting in undesirable process results and reduced yield. The invention discloses a semiconductor processing method, which can maintain a sheath layer on a workpiece (such as a wafer) between two adjacent RF starting steps so as to repel particles, thereby improving the process result and the yield.
Figure 1 is a flow chart of a method 10 of semiconductor processing in accordance with one embodiment of the present invention. In this embodiment, the method 10 is applied to a plasma processing apparatus. The Plasma processing apparatus may be, for example, a Plasma etching apparatus, in particular, a Plasma etching apparatus using Inductively Coupled Plasma (ICP). Those skilled in the art will appreciate that the plasma processing apparatus may include the necessary components of a process chamber, an rf source, a matching circuit, an induction coil, a lower electrode platen disposed within the process chamber, etc., and the present invention is not limited to the detailed architecture of the plasma processing apparatus. The invention is not limited to the implementation of the method 1 entirely in accordance with the flow of steps shown in fig. 1, provided that substantially the same results are obtained. Method 1 can be summarized roughly as follows:
step 101: the RF source is turned on to process a workpiece (e.g., a wafer) at a first process condition.
Step 102: under the condition that the RF source is kept on to keep the sheath layer on the workpiece (such as wafer),
and adjusting the process conditions.
Step 103: the workpiece (e.g., wafer) is processed under the second process condition.
In this embodiment, the first process condition includes causing an rf source of the plasma processing apparatus to output a first rf power and maintaining a pressure of a process chamber of the plasma processing apparatus at a first chamber pressure; the second process condition includes the rf source of the plasma processing apparatus outputting a second rf power and maintaining a pressure of the process chamber of the plasma processing apparatus at a second chamber pressure. It should be noted that the first process condition may further include having the first reactive gas in the process chamber, setting a flow rate of the first reactive gas, and a first current distribution ratio distributed between the inner coil and the outer coil in the induction coil; the second process conditions may also include having a second reactant gas in the process chamber, setting a flow rate of the second reactant gas, and a second current distribution ratio distributed over the inner and outer coils in the induction coil.
In the present invention, the detailed parameters of the first process condition and the second process condition are not limited, in other words, the first process condition and the second process condition may be completely different or partially the same. For example, the rf power and the chamber pressure in the first process condition and the second process condition are different, and the rest is the same. Alternatively, the first process condition and the second process condition are different in rf power, chamber pressure, reactant gas type and flow rate, reactant gas flow rate, and current distribution ratio. The detailed parameters of the first process conditions and the second process conditions depend on the actual processing needs.
Step 101 is the RF start step described above. In step 101, the rf source is turned on to ionize a first reactant gas into a plasma in the process chamber, and then a workpiece (e.g., a wafer) placed in the process chamber is processed, e.g., etched, under a first predetermined process condition. The rf source mentioned in the present invention may be a pulsed rf source or a continuous wave rf source, which is not a limitation of the present invention. One of ordinary skill in the art will readily appreciate that a step of adjusting the process conditions of the plasma processing apparatus to the first process conditions may be additionally included prior to step 101. Step 102 is a transition step, i.e., a step between two adjacent RF ignition steps. In step 102, the rf source is turned on to maintain a sheath over the workpiece (e.g., wafer) while the first process condition is adjusted to the second process condition. Step 103 is an RF ignition step. In step 103, the workpiece (e.g., wafer) is processed under the second process conditions set in step 102. Since the RF source is turned on, the plasma remains on, and the sheath layer remains on the workpiece (e.g., wafer) between the two RF ignition steps (i.e., transition step 102), particles are prevented from falling on the workpiece (e.g., wafer), thereby improving process results and increasing yield.
FIG. 2 is a detailed flowchart of step 102 of FIG. 1 according to one embodiment of the present invention. As described in the embodiment of fig. 1, step 102 is a transition step in which the rf source is maintained on and the plasma is maintained in an ignition state to maintain the sheath present, and in step 102, the first process condition is adjusted to the second process condition. Fig. 2 illustrates the process of adjusting the rf power of the rf source in detail. The invention is not limited to the implementation of the flowchart of fig. 2 entirely in accordance with the flowchart of steps shown in fig. 2, provided that substantially the same results are achieved. The flow chart of fig. 2 divides the transition step (i.e., step 102) into three sub-steps, which can be summarized in detail as follows:
the first substep 201: and keeping the radio frequency source on, and adjusting the output power of the radio frequency source from the first radio frequency power to the transition radio frequency power.
Second substep 202: and enabling the radio frequency source to continuously output the transitional radio frequency power within a preset time period.
Third substep 203: and adjusting the output power of the radio frequency source from the transition radio frequency power to the second radio frequency power.
In steps 201 to 203, the transitional rf power is the lowest rf power at which the plasma is ignited. Preferably, the transition radio frequency power is 300 watts. However, this is not a limitation of the present invention, and in other embodiments, the transition rf power may be an rf power greater than the lowest rf power. It should be noted that, in the transition step (i.e., step 102), since the plasma is maintained to ignite, the workpiece (e.g., wafer) is still normally processed, e.g., etched, and therefore the magnitude of the transition rf power is limited. In practice, the process (e.g., etch) level is negligible for less than 2%, and thus, in the present invention, the transition rf power may be between the lowest rf power at which plasma ignition is maintained and the rf power at which the process (e.g., etch) level is less than 2%.
In step 201, the process of adjusting the output power of the rf source from the first rf power to the transition rf power may adjust the first rf power to the transition rf power linearly in a manner of setting a fixed adjustment rate or setting a fixed adjustment time. In some embodiments, the output power of the RF source may be set to adjust linearly from the first RF power to the transition RF power at a rate of 800W/S to 1000W/S. In some embodiments, the output power of the rf source may be set to adjust linearly from the first rf power to the transition rf power over a fixed period of time (e.g., 1 s). For example, assuming that the first RF power is 800 Watts and the transition RF power is 300 Watts, in step 201, the RF power is linearly decreased from 800 Watts to 300 Watts at a rate of 800W/S. For another example, assuming that the first RF power is 800 Watts and the transition RF power is 300 Watts, in step 201, the first RF power is linearly decreased from 800 Watts to 300 Watts for a fixed period of time (e.g., 1 s). Meanwhile, in step 201, other parameters (e.g., chamber pressure, reactant gas species and flow rate, current distribution ratio) in the first process condition start to be adjusted.
Similarly, in step 203, the process of adjusting the output power of the rf source from the transition rf power to the second rf power may adjust the transition rf power to the second rf power in a manner of setting a fixed adjustment rate or setting a fixed adjustment time. In some embodiments, the output power of the RF source may be set to adjust from the transitional RF power to the second RF power at a rate of 800W/S to 1000W/S. In some embodiments, the output power of the rf source may be set to adjust from the transition rf power to the second rf power within a fixed time period (e.g., 1 ms). For example, assuming that the transition RF power is 300W and the second RF power is 500W, in step 203, the RF power is increased linearly from 300W/S to 500W/S. For another example, assuming that the transition rf power is 300 watts and the second rf power is 500 watts, in step 201, the transition rf power is increased linearly from 300 watts to 500 watts for a fixed time period (e.g., 1 s).
In step 202, the first process condition is gradually adjusted to the second process condition while the rf power maintains the output transition rf power. FIG. 3 is a detailed flowchart of step 102 shown in FIG. 1 according to another embodiment of the present invention. In this embodiment, the first chamber pressure in the first process condition is different from the second chamber pressure in the second process condition, and how to adjust the first chamber pressure and the second chamber pressure in a stepwise manner is explained in detail in the flowchart shown in fig. 3. The implementation of the flowchart of fig. 3 in accordance with the step flow of fig. 3 is not limited to the case that substantially the same result is obtained. The flow step of fig. 3 divides the transition step (i.e., step 102) into three sub-steps, which can be summarized in detail as follows:
the first sub-step 301: maintaining the starting of the radio frequency source, and adjusting the output power of the radio frequency source from the first radio frequency power to transition radio frequency power, wherein the transition radio frequency power is the lowest radio frequency power for maintaining the starting; simultaneously, the chamber pressure is adjusted from the first chamber pressure to a first transition chamber pressure.
The second substep 302: enabling the radio frequency source to continuously output transitional radio frequency power within a preset time period; simultaneously, the chamber pressure is adjusted from the first transition chamber pressure to the second transition chamber pressure.
Third substep 303: adjusting the output power of the radio frequency source from the transition radio frequency power to a second radio frequency power; simultaneously, the chamber pressure is adjusted from the second transition chamber pressure to the second chamber pressure.
In steps 301 to 303, the adjustment of the rf power is the same as in steps 201 to 203, and only the detailed operation of the chamber pressure adjustment will be described.
In step 301, the chamber pressure is adjusted from a first chamber pressure to a first transition chamber pressure, wherein the first transition chamber pressure satisfies the following equation:
first transition chamber pressure = X% first chamber pressure + Y% second chamber pressure,
wherein X and Y are natural numbers greater than zero, and X + Y =100. In this embodiment, when the first chamber pressure is greater than the second chamber pressure, X is greater than Y; conversely, X is less than Y. In step 301, the process of adjusting the chamber pressure from the first chamber pressure to the first transition chamber pressure may linearly adjust the first chamber pressure to the first transition chamber pressure in a manner of setting a fixed adjustment rate or setting a fixed adjustment time.
In step 302, the chamber pressure is adjusted from a first transition chamber pressure to a second transition chamber pressure, wherein the second transition pressure is equal to an average of the first transition chamber pressure and the second chamber pressure. In step 302, the process of adjusting the chamber pressure from the first transition chamber pressure to the second transition chamber pressure may linearly adjust the first transition chamber pressure to the second transition chamber pressure in a manner of setting a fixed adjustment rate or setting a fixed adjustment time.
In step 303, the chamber pressure is adjusted from the second transition chamber pressure to the second chamber pressure. In step 303, the process of adjusting the chamber pressure from the second transition chamber pressure to the second chamber pressure may linearly adjust the second transition chamber pressure to the second chamber pressure in a manner of setting a fixed adjustment rate or setting a fixed adjustment time.
Table 1 below summarizes briefly the pressure when the first chamber is pressurized to Pre A And the pressure of the second chamber Pre B In various cases, the chamber pressure is regulated.
TABLE 1
In steps 301-303, the RF source is turned on, the plasma is turned on, and a sheath over the workpiece (e.g., wafer) remains present. In this way, chamber pressure replacement can be accomplished and particles can be prevented from falling on the workpiece (e.g., wafer), thereby improving process results and yield.
FIG. 4 is a detailed flowchart of step 102 shown in FIG. 1 according to another embodiment of the present invention. In the present embodiment, the kind and flow rate of the first reactive gas in the first process condition are different from those of the second reactive gas in the second process condition, and how to adjust stepwise in the case where the kind and flow rate of the first reactive gas are different from those of the second reactive gas is explained in detail in the flow shown in fig. 4. The invention is not limited to the implementation of the flowchart of fig. 4 entirely in accordance with the flowchart of steps shown in fig. 4, provided that substantially the same results are achieved. The flow step of fig. 4 divides the transition step (i.e., step 102) into three sub-steps, which can be summarized in detail as follows:
first substep 401: maintaining the starting of the radio frequency source, and adjusting the output power of the radio frequency source from the first radio frequency power to transition radio frequency power, wherein the transition radio frequency power is the lowest radio frequency power for maintaining the starting; meanwhile, the kind of the reaction gas in the process chamber is maintained as the first reaction gas, and the flow rate of the reaction gas is maintained as the first reaction gas flow rate.
Second substep 402: enabling the radio frequency source to continuously output transitional radio frequency power within a preset time period; meanwhile, the first reaction gas in the process chamber is adjusted to the second reaction gas, and the flow rate of the first reaction gas is adjusted to the flow rate of the second reaction gas.
Third substep 403: adjusting the output power of the radio frequency source from the transition radio frequency power to a second radio frequency power; meanwhile, the reactive gas species in the process chamber is maintained as the second reactive gas, and the flow rate of the reactive gas is maintained as the second reactive gas flow rate.
In steps 401 to 403, the adjustment of the rf power is the same as in steps 201 to 203, and only the detailed operation of the reactive gas species and flow rate adjustment will be described.
In step 401, the first reactive gas species and the first reactive gas flow rate used in step 101 are maintained, i.e., the first reactive gas species and the first reactive gas flow rate are not adjusted. In step 402, the first reactive gas in the process chamber is adjusted to a second reactive gas and the first reactive gas flow is adjusted to a second reactive gas flow. In step 403, the second reactive gas species and the second reactive gas flow rate in the previous step 101 are maintained, in other words, the first reactive gas species and the first reactive gas flow rate are not adjusted. In steps 401 through 403, the RF source is turned ON, the plasma is turned ON, and a sheath over the workpiece (e.g., wafer) remains present. Therefore, the replacement of the type and flow rate of the reaction gas can be completed and the particles can be prevented from falling on the workpiece (such as a wafer), thereby improving the process result and yield.
Table 2 below summarizes the first reactant gas species Air A And Flow A With a second reactive gas species Air B And Flow B In different cases, the adjustment process of the reaction gas type and flow rate.
TABLE 2
In this embodiment, the first reactive gas species and flow rate in the first process condition are different from the second reactive gas species and flow rate in the second process condition, however, one skilled in the art can easily understand how to operate when the first reactive gas flow rate is the same as the second reactive gas flow rate but the first reactive gas species is different from the second reactive gas species. Similarly, one of ordinary skill in the art will readily understand how to operate when the first reactive gas species is the same as the second reactive gas species but the first reactive gas flow rate is different from the second reactive gas flow rate.
In addition, after reading the embodiments of fig. 3 and 4, one skilled in the art can easily understand the first chamber pressure Pre in the first process condition A First reactant gas species Air A And flow Folw A And a second chamber pressure Pre in a second process condition B Second reaction gas species Air B And Flow B How to adjust the adjustment in different situations is briefly summarized in the following table 3, and the detailed description is omitted here for brevity.
TABLE 3
FIG. 5 is a flowchart illustrating the detailed procedure of step 102 shown in FIG. 1 according to another embodiment of the present invention. In the present embodiment, the first current sharing ratio in the first process condition is different from the second current sharing ratio in the second process condition, and how to adjust the first current sharing ratio and the second current sharing ratio in steps in the case where they are different is explained in detail in the flow shown in fig. 5. The invention is not limited to the implementation of the flowchart of fig. 5 entirely in accordance with the flowchart of steps shown in fig. 5, provided that substantially the same results are achieved. The flow chart of fig. 5 divides the transition step (i.e., step 102) into three sub-steps, which can be summarized in detail as follows:
first substep 501: maintaining the starting of the radio frequency source, and adjusting the output power of the radio frequency source from the first radio frequency power to a transition radio frequency power, wherein the transition radio frequency power is the lowest radio frequency power for maintaining the starting; meanwhile, the current distribution ratio of the induction coil is maintained at the first current distribution ratio.
Second substep 502: enabling the radio frequency source to continuously output transitional radio frequency power within a preset time period; meanwhile, the first current distribution ratio of the induction coil is adjusted to the transition current distribution ratio.
Third substep 503: adjusting the output power of the radio frequency source from the transition radio frequency power to a second radio frequency power; at the same time, the transient current distribution ratio is adjusted to the second current distribution ratio.
In steps 501 to 503, the adjustment of the rf power is the same as in steps 201 to 203, and only the detailed operation of the adjustment of the current sharing ratio will be described. The current distribution ratio is a ratio of currents distributed to the inner coil and the outer coil in the induction coil, and in detail, the current distribution ratio satisfies the following equation:
current distribution ratio = current on outer coil/(current on inner coil + current on outer coil)
In step 501, the first current distribution ratio used in step 101 is maintained, in other words, the first current distribution ratio is not adjusted. In step 502, the first current sharing ratio of the induction coil is adjusted to a transient current sharing ratio, where the transient current sharing ratio is an average value of the first current sharing ratio and the second current sharing ratio. In step 503, the second current distribution ratio in the previous step is maintained, in other words, the second current distribution ratio is not adjusted. In steps 501-503, the RF source is turned on, the plasma is turned on, and a sheath over the workpiece (e.g., wafer) remains present. Therefore, the replacement of the current distribution ratio can be completed and the particles can be prevented from falling on the workpiece (such as a wafer), thereby improving the process result and the yield.
Table 4 below summarizes the Current as the first Current sharing ratio A Current is distributed with the second Current in proportion B In different cases, the adjustment process of the current sharing ratio.
TABLE 4
After reading the embodiments of fig. 3 and 5, one skilled in the art can easily understand the first chamber pressure Pre in the first process condition A And a first Current distribution ratio Current A And a second chamber pressure Pre in a second process condition B And a second Current sharing ratio Current B How to adjust the adjustment in different situations is briefly summarized in the following table 5, and the detailed description is omitted here for brevity.
TABLE 5
After reading the embodiments of FIGS. 4 and 5, one of ordinary skill in the art will readily understand the first reactant gas species Air in the first process condition A First reaction gas Flow A And a first Current distribution ratio Current A With a second reactive gas species Air in a second process condition B Second reaction gas Flow B And a second Current distribution ratio Current B How to adjust the adjustment in different situations is summarized in the following table 6, and the detailed description is omitted here for brevity.
TABLE 6
After reading the embodiments of fig. 3 to 5, one skilled in the art can easily understand the first chamber pressure Pre in the first process condition A First reactant gas species Air A First reaction gas Flow A And a first Current sharing ratio Current A And a second chamber pressure Pre in a second process condition B Second reaction gas species Air B Second reaction gas Flow B And a second Current distribution ratio Current B How to adjust the adjustment in different situations is summarized in the following table 7, and the detailed description is omitted here for brevity.
TABLE 7
In the embodiment of fig. 2 to 5, step 102 is divided into 3 sub-steps so that the first process conditions can be adjusted to the second process conditions in a timely manner. However, in some embodiments, if more time is required to adjust from the first process condition to the second process condition, more sub-steps may be added in time, so that the adjustment of the first process condition to the second process condition may be smoother. It is within the scope of the present invention to maintain the RF source on, the plasma on, and the sheath over the workpiece (e.g., wafer) as long as between the two RF ignition steps, any adjustment of the process condition parameters is maintained.
Claims (9)
1. A method of processing a semiconductor wafer, comprising:
starting the radio frequency source to enable the radio frequency source to output first radio frequency power, and setting the chamber pressure of the process chamber as first chamber pressure;
maintaining the starting of the radio frequency source, and adjusting the output power of the radio frequency source from the first radio frequency power to a transition radio frequency power, wherein the transition radio frequency power is the lowest radio frequency power for maintaining the starting; simultaneously, adjusting the chamber pressure from the first chamber pressure to a first transition chamber pressure, the first transition chamber pressure = X%/the first chamber pressure + Y%/a second chamber pressure, where X and Y are natural numbers greater than zero, and X + Y =100;
enabling the radio frequency source to continuously output the transitional radio frequency power within a preset time period; simultaneously, adjusting the chamber pressure from the first transition chamber pressure to a second transition chamber pressure, the second transition chamber pressure being equal to an average of the first transition chamber pressure and the second chamber pressure;
adjusting the output power of the radio frequency source from the transition radio frequency power to a second radio frequency power;
simultaneously, adjusting the chamber pressure from the second transition chamber pressure to the second chamber pressure; and
causing the rf source to output the second rf power and maintaining the chamber pressure at the second chamber pressure.
2. The method of claim 1, wherein the first rf power is linearly adjusted to the transition rf power in a manner of setting a fixed adjustment rate or setting a fixed adjustment time; and/or
And linearly adjusting the transitional radio frequency power to the second radio frequency power in a mode of setting a fixed adjusting speed or setting a fixed adjusting time.
3. The method of claim 1, wherein the chamber pressure is linearly regulated from the first chamber pressure to a first transition chamber pressure in a manner that sets a fixed regulation rate or sets a fixed regulation time; and/or
Linearly adjusting the chamber pressure from the first transition chamber pressure to a second transition chamber pressure in a manner that sets a fixed adjustment rate or sets a fixed adjustment time; and/or
Linearly adjusting the chamber pressure from the second transition chamber pressure to the second chamber pressure in a manner that sets a fixed adjustment rate or a fixed adjustment time.
4. The method of claim 2, wherein the fixed adjustment rate has a value in a range of 800W/S to 1000W/S.
5. The method of any of claims 1-4, wherein the radio frequency source is a pulsed radio frequency source or a continuous wave radio frequency source.
6. The method of any of claims 1-4, wherein the transition radio frequency power is 300 watts.
7. The method of any one of claims 1-4, wherein X is greater than Y when the first chamber pressure is greater than the second chamber pressure.
8. The method of claim 1, further comprising:
and adjusting the first reaction gas in the process chamber to be a second reaction gas and adjusting the flow rate of the first reaction gas to be a second reaction gas flow rate while the radio frequency source continuously outputs the transitional radio frequency power.
9. The method of claim 1 or 8, further comprising:
adjusting a first current distribution proportion of an induction coil to a transition current distribution proportion while the radio frequency source continuously outputs the transition radio frequency power, wherein the transition current distribution proportion is equal to an average value of the first current distribution proportion and a second current distribution proportion;
and adjusting the transition current distribution proportion to the second current distribution proportion while adjusting the output power of the radio frequency source from the transition radio frequency power to the second radio frequency power.
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