CN104752153A - Substrate etching method - Google Patents
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- CN104752153A CN104752153A CN201310738342.9A CN201310738342A CN104752153A CN 104752153 A CN104752153 A CN 104752153A CN 201310738342 A CN201310738342 A CN 201310738342A CN 104752153 A CN104752153 A CN 104752153A
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- 239000000758 substrate Substances 0.000 title claims abstract description 144
- 238000000034 method Methods 0.000 title claims abstract description 107
- 238000005530 etching Methods 0.000 title claims abstract description 72
- 230000008569 process Effects 0.000 claims abstract description 44
- 230000004048 modification Effects 0.000 claims abstract description 17
- 238000012986 modification Methods 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims description 63
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000008602 contraction Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 230000002028 premature Effects 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000019552 anatomical structure morphogenesis Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003121 nonmonotonic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
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Abstract
A substrate etching method provided by the invention comprises the following steps: a main etching step in which a main etching gas and an auxiliary gas are fed into a reaction chamber, and one or more process parameters are adjusted according to a predetermined rule as the process time of the step increases, wherein the auxiliary gas is a gas or a gas combination which can improve the bombardment and/or the etching selection ratio; and a shape modification step for modifying the shape of an etched pattern on a substrate. By adopting the substrate etching method provided by the invention, the portability and repeatability of a process can be improved on the premise of obtaining an ideal shape of the etched pattern on the substrate.
Description
Technical field
The present invention relates to microelectronics technology, particularly a kind of substrate lithographic method.
Background technology
PSS(Patterned Sapp Substrates, graphical sapphire substrate) technology is that the one generally adopted at present improves GaN(gallium nitride) method of the light extraction efficiency of base LED component.In the process of carrying out PSS technique, it grows dry etching mask usually on substrate, and adopts photoetching process that mask is carved figure; Then adopt ICP technology etching substrate surface, to form the figure of needs, then remove mask, and adopt growing GaN film on epitaxy technique substrate surface after etching.At present, because the pattern adopting ICP technology etching substrate surface to obtain can affect the light-out effect of LED component, especially the cone shape pattern that sidewall is straight can significantly improve light extraction efficiency, thus this pattern receives the welcome of increasing producer, becomes a kind of technic index comparatively popular at present.
The first substrate lithographic method existing comprises four steps, that is:
Step one, utilizes higher exciting power and substrate bias power to modify the pattern of mask at short notice.
Step 2, adopts BCl
3, or BCl
3and CHF
3mist or BCl
3and H
2mist or BCl
3, CHF
3and H
2mist as etching gas, and utilize higher substrate bias power, make mask start in advance to shrink as much as possible, that is, make flex point height reduction.In addition, this step 2 starts to shrink at mask, that is, terminate when flex point has just occurred or has been about to occur, start to carry out follow-up step 3 simultaneously.
Step 3, utilizes lower substrate bias power to improve etching selection ratio, thus can increase etching height.
Step 4, utilizes higher substrate bias power and lower chamber pressure, modifies the pattern of etched features on substrate.
Inevitably there is following problem in actual applications in the first substrate lithographic method above-mentioned, that is: because because of factors such as cavity environments, the etch rate of substrate etching technics can occur that some fluctuate, the moment causing flex point to occur shifts to an earlier date or delays, this makes to be difficult to accomplish the end step two when flex point has just occurred or be about to occur, start to carry out step 3 simultaneously, and, the substrate bias power difference adopted due to step 2 and step 3 is larger, in the moment that flex point occurs in advance or when delaying, the morphogenesis of etched features on the final substrate obtained can be caused to be modified excessively or modify not enough deformity, thus be degrading the fluctuation of technique.Found through experiments, when flex point occurred in the desirable moment, on the final substrate obtained, to show as sidewall straight smooth for the pattern of etched features, as shown in Figure 1A; When the moment that flex point occurs shifts to an earlier date, on the final substrate obtained, the pattern of etched features shows as sidewall formation and is modified excessive deformity, as shown in Figure 1B; When the moment that flex point occurs is delayed, on the final substrate obtained, the pattern of etched features shows as sidewall formation and is modified not enough circular arc, as shown in Figure 1 C.
For this reason, existing the second substrate lithographic method improves the first substrate lithographic method above-mentioned, it comprises four steps equally, and step one is wherein identical with step 4 with the step one of the first substrate lithographic method above-mentioned with step 4, and is only that step 2 is different with step 3.Particularly, the step 2 of the second substrate lithographic method is the transition step reduced to low substrate bias power from high substrate bias power, that is, high substrate bias power is made to be reduced to lower performance number from higher performance number within the process time of presetting, to play the effect of adjustment etching height and base width.The step 3 of the second substrate lithographic method is the angle of inclination by regulating substrate bias power to regulate sidewall, that is, substrate bias power is lower, then angle of inclination is larger, otherwise, then less.In addition, the process time of this step 3 should set according to the process time of step one, that is, the process time of step one is longer, then the process time of step 3 is shorter, otherwise, then longer.
Although above-mentioned the second substrate lithographic method can obtain the pattern of etched features on ideal substrate, but, because the method is only utilize separately higher substrate bias power to modify the pattern of etched features on substrate, not only regulating measure is single for this, and require higher to the etch rate of technique and etching selection ratio, cause adopting ionization degree higher, the ICP system that the spatial distribution of plasma is comparatively concentrated carries out etching technics, the pattern of etched features on the substrate that meets the demands could be obtained, in other words, above-mentioned the second substrate lithographic method cannot be adapted to the ICP system that ionization degree spatial distribution that is lower or plasma is comparatively disperseed, thus portability is more weak.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, and propose a kind of substrate lithographic method, it can improve portability and the repeatability of technique under the prerequisite of pattern that can obtain etched features on desirable substrate.
Thering is provided a kind of substrate lithographic method for realizing object of the present invention, comprising the following steps:
Main etch step, main etching gas and assist gas is passed in reaction chamber, described assist gas is to improve bombardment property and/or the gas of etching selection ratio or combination of gases, and the increase of process time along with this step, regulate one or more technological parameters by pre-defined rule; Pattern modification step, for modifying the pattern of etched features on substrate.
Wherein, described technological parameter comprises chamber pressure and/or exciting power and/or substrate bias power and/or flow proportional; Described flow proportional comprises first flow ratio and the second flow-rate ratio, and wherein said first flow is than the ratio for the gas flow of improved bombardment in described assist gas and the flow of main etching gas; Described second flow-rate ratio is the ratio of the gas flow of improved etching selection ratio in described assist gas and the flow of main etching gas.
Wherein, in described main etch step, described technological parameter comprises chamber pressure, and regulates the pre-defined rule of described chamber pressure to be: reduce described chamber pressure by the relation of discrete function or continuous function.
Preferably, described chamber pressure changes in the scope of 2 ~ 3mT.
Wherein, in described main etch step, described technological parameter comprises exciting power, and regulates the pre-defined rule of described exciting power to be: improve described exciting power by the relation of discrete function or continuous function.
Preferably, described exciting power changes in the scope of 1800 ~ 2400W.
Wherein, in described main etch step, described technological parameter comprises substrate bias power, and regulates the pre-defined rule of described substrate bias power to be: reduce described substrate bias power by the relation of discrete function or continuous function.
Preferably, described substrate bias power changes in the scope of 100 ~ 600W.
Wherein, in described main etch step, described technological parameter comprises flow proportional, and regulates the pre-defined rule of described flow proportional to be: reduce described first flow ratio by the relation of discrete function or continuous function, or improve described second flow-rate ratio simultaneously.
Preferably, the described gas improving bombardment property comprises CHF
3, SF
6, CF
4with one or more gases in Ar.
Preferably, the described gas improving etching selection ratio comprises CHF
3, CH
4, H
2, CF
4with one or more gases in HBr.
Preferably, described main etch step terminates when the residual altitude of mask is 600 ~ 900nm.
Preferably, the process time of described pattern modification step is 7 ~ 12min.
The present invention has following beneficial effect:
Substrate lithographic method provided by the invention, it by adopting the gas or combination of gases that can improve bombardment property and/or etching selection ratio as assist gas in main etch step, not only can reduce the requirement of technique to etch rate and etching selection ratio, thus the portability of technique can be improved, but also etching height can be improved, and in follow-up pattern modification step, reduce modification substrate to form the difficulty of the pattern (that is, the conical pattern that sidewall is straight) of desirable etched features.And, one or more technological parameter is regulated by pre-defined rule by the increase of the process time along with this step, not only can improve flexibility and the repeatability of technique, but also flex point height can be reduced by adjusting process parameter and reduce sidewall that to be positioned at the angle of inclination of two upper and lower parts of flex point poor, thus the pattern deformity of etched features on the substrate that causes because of the fluctuation of technique can be avoided or modify not enough, and then the pattern of etched features on the more straight desirable substrate of sidewall can be obtained.In addition, substrate lithographic method provided by the invention compared with prior art, eliminates and modifies the step of mask, thus can avoid the etching height reduction that causes because modifying mask.
Accompanying drawing explanation
Figure 1A is through the scanning electron microscope (SEM) photograph of the first substrate lithographic method existing when the pattern of etched features on the substrate that flex point obtains when the desirable moment occurs;
Figure 1B is the scanning electron microscope (SEM) photograph of the pattern of etched features on the substrate that obtains when the moment that flex point occurs shifts to an earlier date through the first substrate lithographic method existing;
Fig. 1 C is the scanning electron microscope (SEM) photograph of the pattern of etched features on the substrate that obtains when the moment that flex point occurs is delayed through the first substrate lithographic method existing;
The FB(flow block) of the substrate lithographic method that Fig. 2 provides for the embodiment of the present invention;
Fig. 3 is the schematic diagram that the process of flex point appears in substrate sidewall;
Fig. 4 A is the first function relation figure of chamber pressure and process time;
Fig. 4 B is the second function relation figure of chamber pressure and process time;
Fig. 4 C is the third function relation figure of chamber pressure and process time; And
Fig. 5 is for adopting the substrate lithographic method substrate that provides of the embodiment of the present invention to carry out to etch the scanning electron microscope (SEM) photograph of the pattern of etched features on the substrate that obtains.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, substrate lithographic method provided by the invention is described in detail.
In following main etch step, all adopt following process to etch substrate, and be only the technological parameter difference adopted.The detailed process of etching substrate is that is: pass into etching gas (such as BCl to reaction chamber simultaneously
3) and assist gas, and open excitation power supply (such as radio-frequency power supply), excitation power supply applies exciting power to reaction chamber, excites formation plasma to make the etching gas in reaction chamber; Open grid bias power supply, grid bias power supply applies substrate bias power to substrate, to make plasma etching substrate, until etch predetermined etching depth to substrate.Technological parameter mainly comprises the chamber pressure and process time etc. of the kind of etching gas and flow, exciting power, substrate bias power, reaction chamber.In addition, detailed process and the above-mentioned main etch step of pattern modification step are similar, are also only adopted technological parameter differences, to play the effect of the pattern modifying etched features on substrate.
The FB(flow block) of the substrate lithographic method that Fig. 2 provides for the embodiment of the present invention.Refer to Fig. 2, the method comprises the following steps:
Main etch step, in reaction chamber, pass into main etching gas and assist gas, wherein, assist gas is gas or the combination of gases that can improve bombardment property and/or etching selection ratio, and the increase of process time along with this step, regulate one or more technological parameters by pre-defined rule;
Pattern modification step, for modifying the pattern of etched features on substrate.
Wherein, in main etch step, technological parameter can comprise one or more in chamber pressure, exciting power, substrate bias power and flow proportional, in other words, can along with the increase of the process time of this step, regulate a kind of technological parameter, or regulate several different technological parameter simultaneously, other technological parameters be not conditioned then remain unchanged.
In addition, above-mentioned flow proportional comprises first flow ratio and the second flow-rate ratio, and wherein, first flow is than the ratio for the gas flow of improved bombardment in assist gas and the flow of main etching gas, and this gas that can improve bombardment property comprises CHF
3, SF
6, CF
4with one or more gases in Ar; Second flow-rate ratio is the ratio of the gas flow of improved etching selection ratio in assist gas and the flow of main etching gas, and this gas that can improve etching selection ratio comprises CHF
3, CH
4, H
2, CF
4with one or more gases in HBr.
By adopting the gas or combination of gases that can improve bombardment property and/or etching selection ratio as assist gas in main etch step, not only can reduce the requirement of technique to etch rate and etching selection ratio, thus the portability of technique can be improved, but also etching height can be improved, and in follow-up pattern modification step, reduce modification substrate to form the difficulty of the pattern (that is, the conical pattern that sidewall is straight) of desirable etched features.And, one or more technological parameter is regulated by pre-defined rule by the increase of the process time along with this step, not only can improve flexibility and the repeatability of technique, but also flex point height can be reduced by adjusting process parameter and reduce sidewall that to be positioned at the angle of inclination of two upper and lower parts of flex point poor, thus the pattern deformity of etched features on the substrate that causes because of the fluctuation of technique can be avoided or modify not enough, and then the pattern of etched features on the more straight desirable substrate of sidewall can be obtained.In addition, the substrate lithographic method that the embodiment of the present invention provides compared with prior art, eliminates and modifies the step of mask, thus can avoid the etching height reduction that causes because modifying mask.
Below in conjunction with accompanying drawing 3-5, the embodiment of main etch step is described in detail.
In the present embodiment, along with the increase of the process time of main etch step, regulate four kinds of technological parameters by pre-defined rule simultaneously, that is: chamber pressure, exciting power, substrate bias power and flow proportional, and the pre-defined rule of adjustment four kinds of technological parameters is respectively: improve by the relation of discrete function (such as piecewise function) or continuous function or reduce often kind of technological parameter.
Particularly, the pre-defined rule of adjustment chamber pressure is: reduce chamber pressure by the relation of discrete function or continuous function.This is because: along with the increase of process time, relative two sidewalls of mask can cross-direction shrinkage toward each other, and now substrate sidewall occurs flex point because of the cross-direction shrinkage of mask, as shown in Figure 3.Before flex point occurs, higher chamber pressure can improve the contraction speed of mask, that is, can make mask premature contraction, thus can reduce the height of flex point.Lower flex point height not only can improve the base width of the pattern of etched features on substrate, but also can reduce the angle of inclination that sidewall is positioned at the part on the downside of flex point.After flex point occurs, lower chamber pressure can reduce the contraction speed of mask, thus the angle of inclination of the sidewall of etching formation can be larger, namely, the angle of inclination that sidewall is positioned at the part on the upside of flex point can be increased, and then can reducing sidewall, to be positioned at the angle of inclination of two upper and lower parts of flex point poor, thus the pattern of etched features on the more straight desirable substrate of sidewall can be obtained.Therefore, reduce chamber pressure by the relation of pressing discrete function or continuous function, chamber pressure can be made higher for early stage in the etching of main etch step, and after etching the phase lower, thus the pattern of etched features on desirable substrate can be obtained.
The pre-defined rule of above-mentioned reduction chamber pressure can be divided into again following several regulative mode further:
The first regulative mode, as shown in Figure 4 A, chamber pressure is reduced to minimal pressure force value P2 when this step terminates (technique moment T2) by the maximal pressure force value P1 of relation from this step time (technique moment T1) of piecewise function, and in each interval of piecewise function, chamber pressure remains unchanged, in other words, the whole adjustment process of chamber pressure is: the whole process time section of main etch step is divided into several time slices; Often reduce a chamber pressure through a time slice, and remain unchanged at each time slice inner cavity chamber pressure.In addition, each time slice can be the same or different, and the variable quantity reducing chamber pressure for each time can be the same or different.
The second regulative mode, as shown in Figure 4 B, chamber pressure is reduced to minimal pressure force value P2 when this step terminates (technique moment T2) by the maximal pressure force value P1 of relation from this step time (technique moment T1) of piecewise function, and in the interval of each process time of piecewise function, chamber pressure reduces gradually by the relation of continuous function, in other words, the whole adjustment process of chamber pressure is: the whole process time section of main etch step is divided into several time slices; Often reduce a chamber pressure through a time slice, and reduce gradually by the relation of continuous function at each time slice inner cavity chamber pressure.Here, continuous function both can be linear function (as shown in Figure 4 B), also can be curvilinear function.In addition, each time slice can be the same or different, and the relation of continuous function between each time slice can be the same or different.
The third regulative mode, as shown in Figure 4 C, chamber pressure is reduced to minimal pressure force value P2 when this step terminates (technique moment T2) gradually by the maximal pressure force value P1 of relation from this step time (technique moment T1) of continuous function.Here, continuous function both can be linear function (as shown in Figure 4 C), and also can be curvilinear function, and/or this continuous function can be dull, also can be nonmonotonic.In addition, the slope of continuous function or curvature can be consistent in whole process time section, also can change along with the increase of process time.
In actual applications, except above-mentioned three kinds of regulative modes that the present embodiment provides, other any regular of chamber pressure can be reduced by free setting as the case may be, as long as the object of the pattern obtaining etched features on the more straight desirable substrate of sidewall can be reached.In addition, preferably, chamber pressure can change in the scope of 2 ~ 3mT, that is, maximal pressure force value P1 can be 3mT; Minimal pressure force value P2 can be 2mT.
The pre-defined rule of adjustment exciting power is: improve exciting power by the relation of discrete function or continuous function.This is because: lower exciting power not only can reduce flex point height, can also strengthen the directivity of plasma etching, thus the angle of inclination of the sidewall of etching formation can be less; In contrast, higher exciting power can weaken the directivity of plasma etching, thus the angle of inclination of the sidewall of etching formation can be larger.Therefore, exciting power is improved by the relation of pressing discrete function or continuous function, exciting power can be made lower at the etching preliminary stage of main etch step, and after etching stage phase higher, thus can reducing sidewall, to be positioned at the angle of inclination of two upper and lower parts of flex point poor, and then the pattern of etched features on the more straight desirable substrate of sidewall can be obtained.
The pre-defined rule of above-mentioned raising exciting power and the pre-defined rule of above-mentioned chamber pressure similar, and be only improve with reduce between difference, owing to being described in detail the pre-defined rule of chamber pressure above, do not repeated them here.In addition, preferably, exciting power can change in the scope of 1800 ~ 2400W, that is, the minimum exciting power value of exciting power when this step starts is 1800W; The highest exciting power value at the end of this step is 2400W.
The pre-defined rule of adjustment substrate bias power is: reduce substrate bias power by the relation of discrete function or continuous function.This is because: in the etching early stage of main etch step, higher substrate bias power can strengthen the bombardment effect to substrate, thus not only can make mask premature contraction, to reduce the height of flex point, but also can improve the directivity of plasma etching, and then the angle of inclination of the sidewall of etching formation can be less.In the etching later stage of main etch step, lower substrate bias power can reduce the contraction speed of mask, thus the angle of inclination of the sidewall of etching formation can be larger, therefore, substrate bias power is reduced by the relation of pressing discrete function or continuous function, substrate bias power can be made higher at the etching preliminary stage of main etch step, and after etching stage phase lower, thus can reducing sidewall, to be positioned at the angle of inclination of two upper and lower parts of flex point poor, and then the pattern of etched features on the more straight desirable substrate of sidewall can be obtained.
The pre-defined rule of above-mentioned raising substrate bias power and the pre-defined rule of above-mentioned chamber pressure similar, owing to being described in detail the pre-defined rule of chamber pressure above, do not repeated them here.In addition, preferably, substrate bias power can change in the scope of 100 ~ 600W, that is, the highest substrate bias power value of substrate bias power when this step starts is 600W; Minimum substrate bias power value at the end of this step is 100W.
The pre-defined rule of adjust flux ratio is: reduce first flow ratio by the relation of discrete function or continuous function, improve the second flow-rate ratio simultaneously.This is because: in the etching later stage of main etch step, use the gas of relatively many improved bombardments, the gas of relatively less improved etching selection ratio, not only can make mask premature contraction, to reduce the height of flex point, but also can improve the directivity of plasma etching, and then the angle of inclination of the sidewall of etching formation can be less.In the etching later stage of main etch step, use the gas of relatively less improved bombardment, the gas of relatively many improved etching selection ratio, the contraction speed of mask can be reduced, thus the angle of inclination of the sidewall of etching formation can be larger, therefore, first flow ratio is reduced by the relation of pressing discrete function or continuous function, improve the second flow-rate ratio simultaneously, first flow can be made higher at the etching preliminary stage of main etch step, second flow is lower simultaneously, and stage phase first flow is lower after etching, second flow is higher simultaneously, thus can reducing sidewall, to be positioned at the angle of inclination of two upper and lower parts of flex point poor, and then the pattern of etched features on the more straight desirable substrate of sidewall can be obtained.
The pre-defined rule of above-mentioned adjust flux ratio and the pre-defined rule of above-mentioned chamber pressure similar, and be only improve with reduce between difference, owing to being described in detail the pre-defined rule of chamber pressure above, do not repeated them here.In addition, preferably, first, second flow-rate ratio all can change in the scope of 3/70 ~ 15/70, that is, first flow is 15/70 than the highest ratios when this step starts; First flow is 3/70 than the lowest ratio at the end of this step; The lowest ratio of the second flow-rate ratio when this step starts is 3/70; The highest ratios of the second flow-rate ratio at the end of this step is 15/70.
In addition, processes of a gradual change owing to regulating the rule of above-mentioned four technological parameters, namely, reduce chamber pressure and substrate bias power, raising exciting power and adjust flux ratio gradually or by stages, it is more natural that this can make sidewall be positioned at the section transitions ground of the upper and lower both sides of flex point, thus the pattern can avoiding causing because of the fluctuation of technique deformity.
In addition, the process time of main etch step is unsuitable long, and to avoid reducing etching height, preferably, main etch step terminates when the residual altitude of mask is 600 ~ 900nm.
Pattern modification step is for modifying the pattern of etched features on substrate.Particularly, in this step, adopt lower chamber pressure and exciting power, and adopt higher substrate bias power, this can improve the directivity of plasma etching, thus the effect of modifying pattern can be improved, and then be more conducive to the pattern (such as forming the pattern of etched features on conical substrate) forming etched features on desirable substrate.In addition, the process time of pattern modification step is longer relative to main etch step, to modify further the pattern of etched features on the substrate obtained through main etch step, thus obtains the pattern of etched features on desirable substrate.Preferably, the process time of pattern modification step is 7 ~ 12min.
The formula of a technological parameter of the substrate lithographic method provided for the embodiment of the present invention below.Wherein, in main etch step, etching gas is BCl
3, assist gas is CHF
3, and BCl
3flow be 60sccm; CHF
3flow be 7sccm.Along with the increase of process time, adopt the relation of piecewise function to reduce chamber pressure and substrate bias power respectively, improve exciting power, all the other technological parameters then remain unchanged simultaneously, such as, and flow proportional.Particularly, the process time section (altogether 24min) of main etch step is divided into eight time slices, that is:
First time slice, duration is 1min; Chamber pressure is 3mT; Exciting power is 1800W; Substrate bias power is 600W;
Second time slice, duration is 1min; Chamber pressure is 2.5mT; Exciting power is 2000W; Substrate bias power is 500W;
3rd time slice, duration is 1min; Chamber pressure is 2mT; Exciting power is 2400W; Substrate bias power is 400W;
4th time slice, duration is 1min; Chamber pressure is 2mT; Exciting power is 2400W; Substrate bias power is 300W;
5th time slice, duration is 4min; Chamber pressure is 2mT; Exciting power is 2400W; Substrate bias power is 250W;
6th time slice, duration is 5min; Chamber pressure is 2mT; Exciting power is 2400W; Substrate bias power is 200W;
7th time slice, duration is 1min; Chamber pressure is 2mT; Exciting power is 2400W; Substrate bias power is 150W;
8th time slice, duration is 10min; Chamber pressure is 2mT; Exciting power is 2400W; Substrate bias power is 100W.
The technological parameter of pattern modification step is: etching gas is BCl
3, and BCl
3flow be 50sccm; Chamber pressure is 1.5mT; Exciting power is 2000W; Substrate bias power is 700W; Process time is 9min.
On the substrate adopting above-mentioned technological parameter formula to carry out the acquisition of substrate etching technics, the pattern of etched features as shown in Figure 5, and on substrate, the pattern of etched features is conical, and sidewall is comparatively straight.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (13)
1. a substrate lithographic method, is characterized in that, comprises the following steps:
Main etch step, main etching gas and assist gas is passed in reaction chamber, described assist gas is to improve bombardment property and/or the gas of etching selection ratio or combination of gases, and the increase of process time along with this step, regulate one or more technological parameters by pre-defined rule;
Pattern modification step, for modifying the pattern of etched features on substrate.
2. substrate lithographic method as claimed in claim 1, is characterized in that, described technological parameter comprises chamber pressure and/or exciting power and/or substrate bias power and/or flow proportional; Described flow proportional comprises first flow ratio and the second flow-rate ratio, wherein
Described first flow is than the ratio for the gas flow of improved bombardment in described assist gas and the flow of main etching gas; Described second flow-rate ratio is the ratio of the gas flow of improved etching selection ratio in described assist gas and the flow of main etching gas.
3. substrate lithographic method as claimed in claim 2, it is characterized in that, in described main etch step, described technological parameter comprises chamber pressure, and regulates the pre-defined rule of described chamber pressure to be: reduce described chamber pressure by the relation of discrete function or continuous function.
4. substrate lithographic method as claimed in claim 3, it is characterized in that, described chamber pressure changes in the scope of 2 ~ 3mT.
5. substrate lithographic method as claimed in claim 2, it is characterized in that, in described main etch step, described technological parameter comprises exciting power, and regulates the pre-defined rule of described exciting power to be: improve described exciting power by the relation of discrete function or continuous function.
6. substrate lithographic method as claimed in claim 5, it is characterized in that, described exciting power changes in the scope of 1800 ~ 2400W.
7. substrate lithographic method as claimed in claim 1, it is characterized in that, in described main etch step, described technological parameter comprises substrate bias power, and regulates the pre-defined rule of described substrate bias power to be: reduce described substrate bias power by the relation of discrete function or continuous function.
8. substrate lithographic method as claimed in claim 7, it is characterized in that, described substrate bias power changes in the scope of 100 ~ 600W.
9. substrate lithographic method as claimed in claim 1, it is characterized in that, in described main etch step, described technological parameter comprises flow proportional, and regulate the pre-defined rule of described flow proportional to be: reduce described first flow ratio by the relation of discrete function or continuous function, or improve described second flow-rate ratio simultaneously.
10. substrate lithographic method as claimed in claim 1, is characterized in that, the described gas improving bombardment property comprises CHF
3, SF
6, CF
4with one or more gases in Ar.
11. want the substrate lithographic method as described in 1 as right, and it is characterized in that, the described gas improving etching selection ratio comprises CHF
3, CH
4, H
2, CF
4with one or more gases in HBr.
12. want the substrate lithographic method as described in 1 as right, and it is characterized in that, described main etch step terminates when the residual altitude of mask is 600 ~ 900nm.
13. want the substrate lithographic method as described in 1 as right, and it is characterized in that, the process time of described pattern modification step is 7 ~ 12min.
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