CN104752190B - Substrate lithographic method - Google Patents
Substrate lithographic method Download PDFInfo
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- CN104752190B CN104752190B CN201310730963.2A CN201310730963A CN104752190B CN 104752190 B CN104752190 B CN 104752190B CN 201310730963 A CN201310730963 A CN 201310730963A CN 104752190 B CN104752190 B CN 104752190B
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- main etch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Abstract
Substrate lithographic method provided by the invention, comprises the following steps：First main etch step, for modifying mask pattern；Second main etch step, for mask to be made to start cross-direction shrinkage in advance, in favor of forming quadrantal (spherical) triangle etch topography；3rd main etch step, for improving etching selection ratio, to improve etching height；Over etching step, for adjusting substrate pattern；Wherein, stop second main etch step when mask starts cross-direction shrinkage, start simultaneously at and carry out the 3rd main etch step.Substrate lithographic method provided by the invention can improve etching height on the premise of the substrate with preferable pattern is obtained.
Description
Technical field
The present invention relates to microelectronics technology, more particularly to a kind of substrate lithographic method.
Background technology
PSS（Patterned Sapp Substrates, graphical sapphire substrate）Technology is one generally used at present
Kind improves GaN（Gallium nitride）The method of the light extraction efficiency of base LED component.During PSS techniques are carried out, usually in substrate
Upper growth dry etching mask, and mask is carved by figure using photoetching process；Then substrate table is etched using ICP technologies
Face to form the figure needed, then removes mask, and uses and grow GaN film on the substrate surface of epitaxy technique after etching.
At present, since the pattern and height that are obtained using ICP technologies etching substrate surface can influence the light-out effect of LED component,
More and more producers are in order to pursue higher light-out effect, it is desirable that are obtaining the ideal that section shape is approximately quadrantal (spherical) triangle
On the premise of pattern, higher etching height can be obtained.
A kind of existing substrate lithographic method generally use BCl3（Boron chloride）As etching gas, and including two steps
Suddenly, i.e.,：Main etch step and over etching step.Wherein, main etch step is used to control the etch rate and etching selection of technique
Than；Over etching step is used to adjust substrate pattern.However, above-mentioned substrate etching technics has the following problems in practical applications,
I.e.：
In main etch step, with the increase of process time, the opposite two side walls of mask can be received laterally toward each other
Contracting, causes substrate side wall inflection point occur due to the cross-direction shrinkage of mask.In this case, according to higher substrate bias power
（For example, 280W）, as shown in Figure 1, etching selection ratio can be caused relatively low, although can be because of mask premature contraction so as to the height of inflection point
And reduce, but the etching height finally obtained is relatively low；According to relatively low substrate bias power（For example, 180W）, as shown in Fig. 2,
The height of inflection point can be improved, causes the substrate pattern obtained undesirable.
For this purpose, people improve above-mentioned substrate lithographic method, i.e.,：Main etch step is further divided into two sons
Step, in the first sub-step, the higher substrate bias power of use（Usually in 400~700W）Carry out short time etching（During etching
Between be not more than 2 minutes）, to modify PR mask patterns；The technological parameter of second sub-step is roughly the same with above-mentioned main etch step.
Although improved substrate lithographic method can increase the modification to substrate pattern, the etching height obtained compared with
It is low.
The content of the invention
It is contemplated that at least solve one of technical problem in the prior art, it is proposed that a kind of substrate etching side
Method can improve etching height on the premise of the substrate with preferable pattern is obtained.
Purpose to realize the present invention and a kind of substrate lithographic method is provided, comprise the following steps：First main etching walks
Suddenly, for modifying mask pattern；Second main etch step, for mask to be made to start cross-direction shrinkage in advance, in favor of forming straight flange
Triangle etch topography；3rd main etch step, for improving etching selection ratio, to improve etching height；Over etching step is used
In adjusting substrate pattern；Wherein, stop second main etch step when mask starts cross-direction shrinkage, start simultaneously at and carry out institute
State the 3rd main etch step.
Wherein, in second main etch step, according to the size of the mask, etch resistance and/or required
The requirement of height is etched, adjusts substrate bias power.
Wherein, the value range of the substrate bias power is in 230~450W.
Wherein, in the 3rd main etch step, the value range of substrate bias power is in 100~250W.
Wherein, in the 3rd main etch step, according to technique to etching height, completion the 3rd main etch step
The requirement of the residual altitude of mask afterwards adjusts etch period.
Wherein, it is desirable that the etching height is more than 1.4 μm.
Wherein, in first main etch step, the value range of etch period is in 1~2min.
Wherein, in first main etch step, the value range of substrate bias power is in 200~700W.
Wherein, in first, second, and third main etch step, etching gas include BCl3；Or etching gas
Including BCl3And CHF3、CH4And/or H2Mixed gas.
Wherein, in first, second, and third main etch step, the value range of exciting power 1600~
3000W。
Wherein, in first, second, and third main etch step, the value range of process atmospheric pressures is in 1.5~3mT.
The invention has the advantages that：
Substrate lithographic method provided by the invention is used to improve etching choosing by adding when mask starts cross-direction shrinkage
Select than the 3rd main etch step, can not only allow the second main etch step use higher substrate bias power so that mask carries
Preceding beginning cross-direction shrinkage so as to reduce the height of inflection point, but also can improve etching by improving etching selection ratio
Highly, that is to say, that straight in favor of being formed by by the second main etch step mask premature contraction being made to reduce inflection point first
Side triangle etch topography so as to play the role of modifying substrate pattern, then improves etching choosing by the 3rd main etch step
Ratio is selected, so as to play the role of improving etching height, substrate lithographic method provided by the invention there can be reason obtaining as a result,
On the premise of the substrate for thinking pattern, etching height is improved.
Description of the drawings
Fig. 1 is the base obtained respectively afterwards and after over etching step using the main etch step of higher substrate bias power
The scanning electron microscope (SEM) photograph of piece pattern；
Fig. 2 is the base obtained respectively afterwards and after over etching step using the main etch step of relatively low substrate bias power
The scanning electron microscope (SEM) photograph of piece pattern；
Fig. 3 A are the FB(flow block) of substrate lithographic method provided by the invention；
Fig. 3 B are in etching process, and the process of inflection point occurs in substrate pattern；
Fig. 4 be the second main etch step after substrate pattern scanning electron microscope (SEM) photograph；
Fig. 5 be the 3rd main etch step after substrate pattern scanning electron microscope (SEM) photograph；And
Fig. 6 be over etching step after substrate pattern scanning electron microscope (SEM) photograph.
Specific embodiment
For those skilled in the art is made to more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The substrate lithographic method of offer is described in detail.
Fig. 3 A are the FB(flow block) of substrate lithographic method provided by the invention.Fig. 3 A are referred to, this method includes following step
Suddenly：
First main etch step, for modifying mask pattern；
Second main etch step, for mask to be made to start cross-direction shrinkage in advance；
3rd main etch step, for improving etching selection ratio, to improve etching height；
Over etching step, for adjusting substrate pattern；
Wherein, stop the second main etch step when mask starts cross-direction shrinkage, start simultaneously at and carry out the 3rd main etching step
Suddenly.
In above-mentioned each main etch step, using following processes etch substrate, and only be use technological parameter not
Together.Etching substrate detailed process be, i.e.,：Etching gas and auxiliary gas are passed through to reaction chamber, and open excitation power supply（Example
Such as radio-frequency power supply）, excitation power supply applies exciting power to reaction chamber, so that the indoor etching gas of reaction chamber excite to be formed
Gas ions；Grid bias power supply is opened, grid bias power supply is biased power to substrate, so that plasma etching substrate, until to base
Piece etches predetermined etching depth.Technological parameter mainly includes the species of etching gas and flow, exciting power, substrate bias power, work
Skill air pressure（That is, the chamber pressure of reaction chamber）And process time etc..
The detailed process of over etching step and above-mentioned main etch step are similar, are also only that the technological parameter used is different,
To adjust the groove pattern of substrate.In practical applications, over etching step uses smaller etching gas compared with main etch step
Body flow, relatively low chamber pressure and exciting power and higher substrate bias power, to adjust substrate pattern, i.e. adjust ditch
Groove sidewall pattern and angle of inclination.Preferably, the technological parameter of over etching step is：The value range of process atmospheric pressures 1.5~
3mT；The value range of exciting power is in 1400~2000W；The value range of substrate bias power is in 200~700W.
Substrate lithographic method provided by the invention by the way that main etch step is further divided into three steps, and passes through tune
The technological parameter of whole three steps, and finally realize on the premise of the substrate with preferable pattern is obtained, it is high to improve etching
Degree.
It is described in detail below for the entire main etch step of substrate lithographic method provided by the invention.Specifically,
Etching gas include BCl used by entire main etch step3（Boron chloride）；Or BCl3And CHF3（Trifluoro hydrogenated carbon）、
CH4（Tetrahydro carbon）And/or H2（Hydrogen）Mixed gas.Wherein, BCl3The main etching gas larger as flow, and CHF3、
CH4And H2In one of which or it is several then be used as the smaller auxiliary gas of flow.Excitation work(used by entire main etch step
The value range of rate is in 1600~3000W；The value range of process atmospheric pressures is in 1.5~3mT, it is preferred that is 2mT.
Certainly, when carrying out first, second, and third main etch step respectively, the different requirements of etching height can be directed to
And the not same-action of each main etch step, it is independently adjusted the technological parameters of different main etch steps, i.e. first, second
It can be according to respective concrete condition using the species and flow of different etching gas and excitation with the 3rd main etch step
Power.
In the first main etch step, mask pattern is modified by using the mode for improving substrate bias power, so as to
Increase the modification to substrate pattern.Preferably, the value range of substrate bias power is in 400~700W.In addition, the first main etch step
Process time it is unsuitable long because the longer process time, that mask height can be caused to reduce was too fast, so as to etching altitudinal belt
Carry out harmful effect.Preferably, the value range of etch period is in 1~2min.
First main etch step is used to that mask to be made to start cross-direction shrinkage in advance.As shown in Figure 3B, due to going out in substrate pattern
It is mainly the reason for inflection point now：The slope of side wall difference before and after mask starts cross-direction shrinkage, i.e. start horizontal receipts in mask
The side wall slope formed before contract higher than the side wall slope that mask starts to be formed after cross-direction shrinkage, therefore, if can make mask
Start cross-direction shrinkage in advance, then can reduce the height of inflection point, relatively low inflection point highly contributes to obtain preferable substrate pattern.
First main etch step realization allow mask start cross-direction shrinkage in advance used by method be：Substrate bias power is adjusted, with to the greatest extent
Possibly make mask premature contraction.It preferably, can be according to the size of the mask, etch resistance and/or required etching
The requirement of height adjusts substrate bias power.Preferably, the value range of substrate bias power is in 230~450W.
3rd main etch step is used to improve etching selection ratio.Stopped for the above-mentioned second main quarter when mask starts cross-direction shrinkage
Step is lost, starts simultaneously at and carries out the 3rd main etch step.Due to after the second main etch step is completed, etching selection ratio can under
Drop, if still using the technological parameter of the second main etch step, the etching height it will cause acquisition is relatively low.Therefore, it is necessary to cover
Film starts to carry out the 3rd main etch step during cross-direction shrinkage, to improve etching selection ratio, thereby may be ensured that etching height.3rd
Main etch step realizes that the method for improving etching selection ratio can be：Reduce substrate bias power.Preferably, the value of substrate bias power can
Accommodation is carried out with the cover plate materials being directed to for bogeys such as fixed tray, pedestals, for example, quartz cover plate is directed to,
For the value range of substrate bias power in 100~250W, and for the cover board that the metal materials such as aluminium make, substrate bias power can be basic herein
Upper appropriate increase.
Since the 3rd main etch step can improve etching height, thus the second main etch step use can be allowed higher
Substrate bias power, i.e. allow the second main etch step after obtain relatively low etching height, that is to say, that by borrowing first
The second main etch step is helped to make mask premature contraction and reduce inflection point, so as to play the role of modifying substrate pattern（It is but higher
Substrate bias power can sacrifice certain etching height）, etching selection ratio then is improved by the 3rd main etch step, is carried so as to play
The effect of high etching height（Make up the etching height sacrificed before）, and then can realize and obtain the substrate with preferable pattern
On the premise of, improve etching height.
Moreover, the process time of second, third main etch step should adapt to each other, with high in substrate pattern and etching
Balance is obtained between degree, it is preferred that can be according to technique to the residue of mask after etching height, the 3rd main etch step of completion
The requirement of height adjusts etch period.In practical applications, it is desirable that etching height is more than 1.4 μm；It is required that complete the 3rd main etching
The residual altitude of mask is preferably not less than 500nm after step.
Following is that the etching that substrate lithographic method provided by the invention carries out is tested.Specifically,
The technological parameter of first main etch step is：Etching gas are BCl3, flow 70sccm；Process atmospheric pressures are 2mT；
Exciting power is 2400W；Substrate bias power is 600W；Process time is 2min.
The technological parameter of second main etch step is：Etching gas are BCl3And CHF3Mixed gas, BCl3Flow be
60sccm, CHF3Flow be 10sccm；Process atmospheric pressures are 2mT；Exciting power is 2400W；Substrate bias power is 350W；During technique
Between be 11min.
The technological parameter of 3rd main etch step is：Etching gas are BCl3And CHF3Mixed gas, BCl3Flow be
60sccm, CHF3Flow be 10sccm；Process atmospheric pressures are 2mT；Exciting power is 2400W；Substrate bias power is 200W；During technique
Between be 5min.
Fig. 4, Fig. 5 and Fig. 6 are respectively using the substrate shape obtained after second, third main etch step and over etching step
Looks, the experimental results showed that, using substrate lithographic method provided by the invention, may finally obtain high with preferable pattern and etching
The substrate of degree.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (11)
1. a kind of substrate lithographic method, which is characterized in that comprise the following steps：
First main etch step, for modifying mask pattern；
Second main etch step, for mask to be made to start cross-direction shrinkage in advance, in favor of forming quadrantal (spherical) triangle etch topography；
3rd main etch step, for improving etching selection ratio, to improve etching height；
Over etching step, for adjusting substrate pattern；
Wherein, stop second main etch step when mask starts cross-direction shrinkage, start simultaneously at and carry out the 3rd main quarter
Lose step.
2. substrate lithographic method as described in claim 1, which is characterized in that in second main etch step, according to right
The requirement of the size of the mask, etch resistance and/or required etching height adjusts substrate bias power.
3. substrate lithographic method as claimed in claim 2, which is characterized in that the value range of the substrate bias power 230~
450W。
4. substrate lithographic method as described in claim 1, which is characterized in that in the 3rd main etch step, bias work(
The value range of rate is in 100~250W.
5. substrate lithographic method as described in claim 1, which is characterized in that in the 3rd main etch step, according to work
Requirement of the skill to the residual altitude of mask after etching height, completion the 3rd main etch step, adjusts etch period.
6. substrate lithographic method as claimed in claim 5, which is characterized in that it is required that the etching height is more than 1.4 μm.
7. substrate lithographic method as described in claim 1, which is characterized in that in first main etch step, during etching
Between value range in 1~2min.
8. substrate lithographic method as described in claim 1, which is characterized in that in first main etch step, bias work(
The value range of rate is in 200~700W.
9. substrate lithographic method as described in claim 1, which is characterized in that walked in first, second, and third main etching
In rapid, etching gas include BCl3；Or
Etching gas include BCl3And CHF3、CH4And/or H2Mixed gas.
10. substrate lithographic method as described in claim 1, which is characterized in that walked in first, second, and third main etching
In rapid, the value range of exciting power is in 1600~3000W.
11. substrate lithographic method as described in claim 1, which is characterized in that in first, second, and third main etching
In step, the value range of process atmospheric pressures is in 1.5~3mT.
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| CN106495087B (en) * | 2015-09-08 | 2020-04-28 | 北京北方华创微电子装备有限公司 | Etching method of silicon dioxide substrate |
| CN111725063A (en) * | 2020-06-19 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Etching method of semiconductor substrate |
| CN112968093B (en) * | 2021-03-02 | 2023-02-07 | 北京北方华创微电子装备有限公司 | Method for forming patterned composite substrate |
| CN115881533A (en) * | 2021-08-12 | 2023-03-31 | 江苏鲁汶仪器股份有限公司 | Etching method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254809A (en) * | 2011-08-04 | 2011-11-23 | 上海蓝光科技有限公司 | Dry etching method for patterned sapphire substrate |
| CN102931071A (en) * | 2011-08-08 | 2013-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and device for patterning sapphire substrate |
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| TWI429030B (en) * | 2011-05-16 | 2014-03-01 | Sino American Silicon Prod Inc | Led substrate and led |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254809A (en) * | 2011-08-04 | 2011-11-23 | 上海蓝光科技有限公司 | Dry etching method for patterned sapphire substrate |
| CN102931071A (en) * | 2011-08-08 | 2013-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method and device for patterning sapphire substrate |
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