CN108091559A - A kind of lithographic method of Sapphire Substrate - Google Patents
A kind of lithographic method of Sapphire Substrate Download PDFInfo
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- CN108091559A CN108091559A CN201611046850.0A CN201611046850A CN108091559A CN 108091559 A CN108091559 A CN 108091559A CN 201611046850 A CN201611046850 A CN 201611046850A CN 108091559 A CN108091559 A CN 108091559A
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 143
- 239000010980 sapphire Substances 0.000 title claims abstract description 143
- 239000000758 substrate Substances 0.000 title claims abstract description 138
- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000005530 etching Methods 0.000 claims abstract description 105
- 239000000112 cooling gas Substances 0.000 claims abstract description 22
- 238000007664 blowing Methods 0.000 claims abstract description 21
- 238000013461 design Methods 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 25
- 230000000087 stabilizing effect Effects 0.000 claims description 9
- 238000012876 topography Methods 0.000 abstract description 9
- 239000001307 helium Substances 0.000 description 12
- 229910052734 helium Inorganic materials 0.000 description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 230000035484 reaction time Effects 0.000 description 8
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000010437 gem Substances 0.000 description 2
- 229910001751 gemstone Inorganic materials 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
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- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of lithographic method of Sapphire Substrate, the main etch step and over etching step carried out including priority, in the stage of being rapidly heated, the back of the body blowing cooling gas pressure of Sapphire Substrate is adjusted in setting pressure limit for being rapidly heated stage when main etch step starts including technique；It will be adjusted to simultaneously for the lower electrode power that Sapphire Substrate is made to generate bias in setting power bracket；So that the temperature of Sapphire Substrate can be risen to from initial temperature in the range of design temperature in the range of setting time；So that the etching selection ratio of Sapphire Substrate can reach more than 0.85.The lithographic method of the Sapphire Substrate, it was found that in setting range the temperature of Sapphire Substrate can risen within a short period of time in the range of the design temperature that its etching selection ratio is made to reach more than 0.85 for Sapphire Substrate back of the body blowing cooling gas pressure and lower electrode power, so as to improve etching selection ratio, and then improve the etching height and etch topography of Sapphire Substrate.
Description
Technical field
The present invention relates to magnetron sputtering technique fields, and in particular, to a kind of lithographic method of Sapphire Substrate.
Background technology
Gallium nitride (GaN) is a kind of new semi-conducting material, has many advantages, such as high efficiency, low-power consumption, long-life, wide
It is general to be applied to LED field.The gallium nitride of high-purity is expensive and is difficult to prepare, and generally use sapphire is as growth
The substrate material of GaN film.There are lattice mismatch (mismatch ratio is about 16%) and thermal stress mismatch between sapphire and GaN,
Direct growth gallium nitride can cause lattice defect on sapphire, and then reduce the luminescent properties of LED.A kind of raising LED goes out light efficiency
The method of rate is exactly graphical sapphire substrate (Patterned Sapphire Substrate, abbreviation PSS).It is graphical blue precious
Stone lining bottom refers to prepare periodic micron or nano level patterned structures on sapphire plane substrate.It is patterned
Sapphire Substrate can not only reduce the dislocation density in gallium nitride (GaN) epitaxial process, improve internal quantum efficiency, but also
The outgoing route of light can be changed, improve light extraction efficiency.According to the literature, graphical sapphire substrate can improve 30%
Luminous efficiency.
That the most popular method of PSS etchings is dry etching (Dry Etch) at present.Dry etching refers to utilize outer power-up
By etching gas (BCl3) plasma is ionized into, physics then is carried out to sapphire and photoresist (PR) or chemistry is anti-
It should.The principal element of reflection etching has etch rate, etching selection ratio (Selectivity, abbreviation Sel).Etch rate refers to
The sapphire height of etching, etching selection ratio refer to the ratio of sapphire etch rate and photoresist etch rate in unit interval
Value.Etching selection ratio is sized to determine that PSS etchings height and etch topography, usual etching selection ratio are got over to a certain extent
Height, the higher and pattern of etching height are better.
Adjusting the method for etching selection ratio at present has increase excitation to form the upper electrode power of plasma, reduce blue precious
The lower electrode power of bias is generated on stone lining bottom, increases process gas (BCl3) flow, increase absorption Sapphire Substrate it is quiet
Electric chuck temperature etc..But etching selection ratio can only be all adjusted to 0.78 or so by these methods, etching selection ratio is totally come
It says or than relatively low.Up to the present, the better method of etching selection ratio is not found can to further improve also.
The content of the invention
The present invention provides a kind of lithographic method of Sapphire Substrate for the above-mentioned technical problems in the prior art.
The lithographic method of the Sapphire Substrate passes through to the back of the body blowing cooling gas pressure in Sapphire Substrate etching process and lower electrode work(
The technological parameter of rate carries out exploitation design, finds Sapphire Substrate back of the body blowing cooling gas pressure and lower electrode power in setting range
It is interior that the temperature of Sapphire Substrate can be made to rise to the setting temperature that its etching selection ratio is made to reach more than 0.85 within a short period of time
In the range of degree, so as to improve etching selection ratio, and then the etching height and etch topography of Sapphire Substrate are improved, finally made
It is greatly improved using the luminous efficiency of the LED component of the Sapphire Substrate.
The present invention provides a kind of lithographic method of Sapphire Substrate, main etch step and the over etching step carried out including priority
Suddenly, which is characterized in that being rapidly heated the stage when main etch step starts including technique is rapidly heated the stage described,
The back of the body blowing cooling gas pressure of the Sapphire Substrate is adjusted in setting pressure limit；It will be used to make the sapphire simultaneously
The lower electrode power that substrate generates bias is adjusted in setting power bracket；So that the temperature of the Sapphire Substrate can set
It is risen in time range from initial temperature in the range of design temperature；So that the etching selection ratio of the Sapphire Substrate can reach
To more than 0.85.
Preferably, it is described set pressure limit as：2~3T.
Preferably, it is described set power bracket as：500~700W.
Preferably, the design temperature scope is：91~102 DEG C.
Preferably, the setting time scope is：30s~2min.
Preferably, the scope of the initial temperature is：20~30 DEG C.
Preferably, it is rapidly heated the stage described in the main etch step, the indoor operation pressure scope of etch chamber is：
2~3mT；The range of flow of etching technics gas is：60~120sccm；For making the indoor etching work of the etch chamber
Skill gas, which excites, to be formed the upper electrode power scope of plasma and is：1200~1600W.
Preferably, the main etch step further includes the process for stabilizing stage after the stage that is rapidly heated, in institute
The process for stabilizing stage is stated, the indoor operation pressure scope of etch chamber is：2~3mT；The range of flow of etching technics gas is：60
~120sccm；For the indoor etching technics gas of the etch chamber to be made to excite to form the upper electrode power of plasma
Scope is：1200~1600W；The back of the body blowing cooling gas pressure limit of the Sapphire Substrate is 2~3T；The lower electrode power
Scope is 200W~500W；The duration scope in the process for stabilizing stage is 10~20min.
Preferably, in the over etching step, the indoor operation pressure scope of etch chamber is：2~3mT；Etching technics
The range of flow of gas is：60~100sccm；It to be formed for exciting the indoor etching technics gas of the etch chamber
The upper electrode power scope of gas ions is：1200~1600W；The back of the body blowing cooling gas pressure limit of the Sapphire Substrate is 4
~6T；The lower electrode power scope is 600W~700W；The duration scope of the over etching step is 15~30min.
Beneficial effects of the present invention：The lithographic method of Sapphire Substrate provided by the present invention, by Sapphire Substrate
The technological parameter of back of the body blowing cooling gas pressure and lower electrode power in etching process carries out exploitation design, finds Sapphire Substrate
Back of the body blowing cooling gas pressure and lower electrode power can make in setting range the temperature of Sapphire Substrate within a short period of time on
It is raised in the range of the design temperature that its etching selection ratio is made to reach more than 0.85, so as to when being started using technique in main etch step
The stage of being rapidly heated improve etching selection ratio, and then improve the etching height and etch topography of Sapphire Substrate, finally
Greatly improve the luminous efficiency of the LED component using the Sapphire Substrate.
Description of the drawings
Fig. 1 is that the different back ofs the body blow helium pressure and the relation table of sapphire substrate surface temperature；
Fig. 2 is the relational graph of sapphire substrate temperature and etching selection ratio；
Fig. 3 is to carry on the back the sapphire substrate surface temperature and the relational graph in reaction time blown when helium pressure is 2T；
Fig. 4 is that lower electrode power is 500W, and the back of the body blows sapphire substrate temperature and the pass in reaction time when helium pressure is 3T
System's figure；
Fig. 5 is the scanning electron microscope (SEM) photograph for the Sapphire Substrate that formation is etched under the technical recipe in the embodiment of the present invention 1.
Specific embodiment
For those skilled in the art is made to more fully understand technical scheme, below in conjunction with the accompanying drawings and it is embodied
Mode is described in further detail a kind of lithographic method of Sapphire Substrate provided by the present invention.
Embodiment 1：
The present embodiment provides a kind of lithographic method of Sapphire Substrate, the main etch step and over etching carried out including priority
In the stage of being rapidly heated, the back of the body of Sapphire Substrate is blown for step, being rapidly heated stage when main etch step starts including technique
Cooling gas pressure is adjusted in setting pressure limit；Simultaneously by for make Sapphire Substrate generate bias lower electrode power tune
It is whole to arrive in setting power bracket；So that the temperature of Sapphire Substrate can rise to setting in the range of setting time from initial temperature
In temperature range；So that the etching selection ratio of Sapphire Substrate can reach more than 0.85.
Wherein, etching selection ratio refers to the ratio of the etch rate of Sapphire Substrate and the etch rate of photoresist.Lan Bao
The etch rate at stone lining bottom refers to the height of etching Sapphire Substrate in the unit interval.When the etch rate of photoresist refers to unit
The height of interior etching photoresist.The etching height for being sized to determine Sapphire Substrate to a certain extent of etching selection ratio
And etch topography, usual etching selection ratio is higher, and the higher and etch topography of etching height is better.
In the present embodiment, it is preferable that Sapphire Substrate the back of the body blowing cooling gas set pressure limit as：2~3T.Further
Preferably, Sapphire Substrate the back of the body blowing cooling gas set pressure limit as：2.5~3T.Preferably design temperature scope is：91
~102 DEG C.
In the etching process of Sapphire Substrate, Sapphire Substrate is in boron chloride (BCl3) plasma physical bombardment
And substantial amounts of heat can be released under chemical reaction double action, surface temperature acutely raises.In order to reduce the surface of Sapphire Substrate
Temperature is usually passed through helium (He) at Sapphire Substrate back.The helium being constantly passed through can be in Sapphire Substrate and electrostatic chuck
Between heat exchange occurs, have the function that reduce sapphire substrate temperature.Helium pressure to be blown for the different back ofs the body precious with indigo plant as shown in Figure 1
The relation table of stone substrate surface temperature.As can be seen from the table, sapphire substrate surface temperature blows the pressure size of helium with the back of the body
Related, the pressure that the back of the body blows helium is bigger, and cooling effect is better, and sapphire substrate surface temperature is lower.
The etching selection ratio of sapphire substrate surface temperature pair has large effect.By controlling sapphire substrate surface temperature
Degree can achieve the purpose that different etching selection ratio is realized in control.If Fig. 2 is sapphire different under identical technical recipe
The relational graph of underlayer temperature and etching selection ratio.Corresponding technical recipe is as follows in Fig. 2：Etching pressure is 2.6mT；Top electrode work(
Rate is 1400W；Lower electrode power is 350W；Process gas (BCl3) flow be 60sccm；Sapphire Substrate carries on the back blowing cooling gas
(He) pressure is 2~6T；Technique duration 20min；The initial temperature of Sapphire Substrate is 20 DEG C.
It will be seen that etching selection ratio reduces afterwards as the rise of sapphire substrate temperature first increases from Fig. 2.When
When sapphire substrate temperature is 63 DEG C, etching selection ratio 0.765 this is because when temperature is relatively low, is adsorbed in Sapphire Substrate
The BCl on surface3The mean free path of molecule is smaller, more violent, the BCl of intermolecular collision3Plasma is to Sapphire Substrate and photoetching
The etch rate of glue is very fast, and etching selection ratio is relatively low on the whole；When the temperature of Sapphire Substrate is 102 DEG C, etching selection ratio
Up to 0.84, this is because when temperature is higher, photoresist because high-temperature baking is hardened and more resistant to etching, the etching speed of photoresist
Rate significantly reduces, and etching selection ratio increases on the whole；And when the temperature of Sapphire Substrate is 107 DEG C, etching selection ratio reduces
To 0.77, main cause is too high for sapphire substrate surface temperature, has been more than the temperature range that photoresist can be born, has caused photoetching
Glue becomes paste without etch resistant.From figure 2 it can be seen that when the temperature of Sapphire Substrate is in the range of 91~102 DEG C, etching selection
Compare high.It is therefore preferable that the back of the body blow helium set pressure limit as 2.5~3T, can be maintained at the temperature of Sapphire Substrate
In the range of 91~102 DEG C, so as to improve etching selection ratio, and then the etching height and etch topography of Sapphire Substrate are improved.
To obtain higher etching selection ratio, it is necessary to the surface temperature of Sapphire Substrate be made to be always held at 91~102
Within the scope of DEG C.However in actual etching process, the surface temperature of Sapphire Substrate gradually rises as the reaction time increases
Temperature is illustrated in figure 3 the sapphire substrate surface temperature and the relational graph in reaction time carried on the back and blown when helium pressure is 2T.From Fig. 3
In as can be seen that the initial temperature of Sapphire Substrate for 20 DEG C, sapphire substrate temperature is 102 DEG C when reacting 20min, sapphire
Substrate surface temperature remains unchanged afterwards as the reaction time first increases.When being 1min between when reacted, sapphire substrate surface temperature
It spends for 63 DEG C；When reaction time is 5min, sapphire substrate surface temperature is 91 DEG C；When reaction time is 10min, sapphire lining
Bottom surface temperature is just raised to 102 DEG C.From the curve in Fig. 2 it is recognised that when sapphire substrate surface temperature is relatively low, carve
Erosion selection is than relatively low, i.e., 0~10min of front etching selection ratios are relatively low, it can influence the etching choosing in whole etching process
Select ratio.Therefore, the key for improving etching selection ratio is to speed up the heating rate of Sapphire Substrate so that sapphire substrate surface temperature
Degree is increased in a short time within the scope of the temperature that etching selection can be made higher.
The size of lower electrode power has large effect to sapphire substrate surface heating rate.Lower electrode power increases,
Heating rate is accelerated, and main cause is BCl under high lower electrode power3Plasma is more acute to the bombardment of sapphire substrate surface
It is strong.Lower electrode power is illustrated in figure 4 as 500W, the back of the body blows the heating curve figure of sapphire substrate temperature when helium pressure is 3T,
Technical recipe is accordingly：Etching pressure is 2.6mT；Upper electrode power is 1400W；Lower electrode power is 500W；Process gas
(BCl3) flow be 60sccm；Technique duration 20min；The initial temperature of Sapphire Substrate is 20 DEG C.It can be seen that the reaction time
Only 2min, sapphire substrate surface temperature have reached 102 DEG C, and temperature rise effect is clearly.Therefore, lower electrode power is increased
Sapphire Substrate heating rate can quickly and effectively be improved.
In the present embodiment, it is preferable that lower electrode power set power bracket as：500~700W.It is further preferred that
Lower electrode power set power bracket as：500~600W.Preferably setting time scope is：30s~2min.It is further excellent
The setting time scope of choosing is：30s~1min.The scope of the initial temperature of Sapphire Substrate is：20~30 DEG C.The technological parameter
Setting scope, sapphire substrate surface temperature can be made to be increased to the temperature range that etching selection can be made higher in a short time
It is interior, so as to improve etching selection ratio, and then improve the etching height and etch topography of Sapphire Substrate.
In the present embodiment, in being rapidly heated the stage for main etch step, other corresponding technical recipes are：In etching cavity
Operation pressure scope be：2~3mT；The range of flow of etching technics gas is：60~120sccm；For making in etching cavity
Etching technics gas excite to form the upper electrode power scope of plasma and be：1200~1600W.
In the present embodiment, main etch step further include the stage of being rapidly heated after the process for stabilizing stage, stablizing work
Skill stage, the indoor operation pressure scope of etch chamber are：2~3mT；The range of flow of etching technics gas is：60~
120sccm；It to form the upper electrode power scope of plasma for exciting the indoor etching technics gas of etch chamber and is：1200
~1600W；The back of the body blowing cooling gas pressure limit of Sapphire Substrate is 2~3T；Lower electrode power scope is 200W~500W；Surely
The duration scope for determining operation stage is 10~20min.
It should be noted that two or more etching technics stages, this reality are included to the main etch step of Sapphire Substrate
The main etch step applied in example includes two operation stages.To the adjustment master of Sapphire Substrate etch process parameters in the present embodiment
If being carried out in the stage that is rapidly heated of main etch step, because the stage that is rapidly heated is affected to etching selection ratio, pass through
After spending quick temperature rise period and process for stabilizing stage, the height and pattern of Sapphire Substrate just determine substantially.
The technological parameter configuration of two operation stages of the main etch step of Sapphire Substrate is exemplified below.Such as：
In the stage of being rapidly heated, corresponding technical recipe is arranged to：Etching pressure is 2.6mT；Upper electrode power is 1400W；Lower electrode
Power is 500W；Process gas (BCl3) flow be 60sccm；Sapphire Substrate back of the body blowing cooling gas (He) pressure is 3T；Technique
Duration 2min；The initial temperature of Sapphire Substrate is 20 DEG C.In the process for stabilizing stage, corresponding technical recipe is arranged to：Etching
Pressure is 2.6mT；Upper electrode power is 1400W；Lower electrode power is 300W；Process gas (BCl3) flow be 60sccm；It is blue
Jewel substrate back of the body blowing cooling gas (He) pressure is 3T；Technique duration 17min；The initial temperature of Sapphire Substrate is 20 DEG C.
The scanning electron microscope (SEM) photograph of the Sapphire Substrate of formation is etched under the technical recipe as shown in figure 5, etching selection ratio be 0.96, be far above
The etching selection ratio (0.78 or so) that currently used technical recipe is obtained.In addition, Sapphire Substrate is carved under the technical recipe
Without turning, Sidewall angles are 176.87 ° for pattern after erosion, so as to avoid the modification to turning in over etching step, after etching
Height higher, pattern are more preferable.
Adjusting lower electrode power, the back of the body blows helium pressure and sapphire substrate surface temperature is controlled by way of the process time
Degree, can read the temperature data of sapphire substrate surface, certainly using the thermometric test paper for being pasted onto sapphire substrate surface
The surface temperature of Sapphire Substrate can also be detected in real time by way of infrared measurement of temperature.
In addition, in the present embodiment, in the over etching step carried out after main etch step, the indoor technique pressure of etch chamber
Power scope is：2~3mT；The range of flow of etching technics gas is：60~100sccm；For making the indoor etching work of etch chamber
Skill gas, which excites, to be formed the upper electrode power scope of plasma and is：1200~1600W；The back of the body blowing cooling gas of Sapphire Substrate
Pressure limit is 4~6T；Lower electrode power scope is 600W~700W；The duration scope of over etching step is 15~30min.It crosses
Etch step can remove remaining photoresist in Sapphire Substrate, and the pattern of Sapphire Substrate is modified, so as to complete
Sapphire Substrate it is graphical.
The lithographic method of Sapphire Substrate in the present embodiment passes through quick liter when technique starts in main etch step
Thermophase develops the back of the body blowing cooling gas pressure in Sapphire Substrate etching process and the technological parameter of lower electrode power
Design finds that Sapphire Substrate back of the body blowing cooling gas pressure and lower electrode power can make Sapphire Substrate in setting range
Temperature is risen within a short period of time in the range of the design temperature that its etching selection ratio is made to reach more than 0.85, is carved so as to improve
Erosion selection ratio, and then the etching height and etch topography of Sapphire Substrate are improved, finally make the LED using the Sapphire Substrate
The luminous efficiency of device greatly improves.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (9)
1. a kind of lithographic method of Sapphire Substrate, the main etch step and over etching step, feature carried out including priority exists
In being rapidly heated the stage when main etch step starts including technique is rapidly heated the stage described, by the sapphire
The back of the body blowing cooling gas pressure of substrate is adjusted in setting pressure limit；It will be used to that the Sapphire Substrate be made to generate bias simultaneously
Lower electrode power be adjusted to setting power bracket in；So that the temperature of the Sapphire Substrate can in the range of setting time from
Initial temperature is risen in the range of design temperature；So that the etching selection ratio of the Sapphire Substrate can reach more than 0.85.
2. the lithographic method of Sapphire Substrate according to claim 1, which is characterized in that it is described set pressure limit as：2
~3T.
3. the lithographic method of Sapphire Substrate according to claim 1, which is characterized in that it is described set power bracket as：
500~700W.
4. the lithographic method of Sapphire Substrate according to claim 1, which is characterized in that the design temperature scope is：
91~102 DEG C.
5. the lithographic method of Sapphire Substrate according to claim 1, which is characterized in that the setting time scope is：
30s~2min.
6. the lithographic method of Sapphire Substrate according to claim 1, which is characterized in that the scope of the initial temperature
For：20~30 DEG C.
7. the lithographic method of Sapphire Substrate according to claim 1, which is characterized in that in the institute of the main etch step
The stage of being rapidly heated is stated, the indoor operation pressure scope of etch chamber is：2~3mT；The range of flow of etching technics gas is：60
~120sccm；For the indoor etching technics gas of the etch chamber to be made to excite to form the upper electrode power of plasma
Scope is：1200~1600W.
8. the lithographic method of Sapphire Substrate according to claim 1, which is characterized in that the main etch step further includes
The process for stabilizing stage after the stage that is rapidly heated, in the process for stabilizing stage, the indoor operation pressure of etch chamber
Scope is：2~3mT；The range of flow of etching technics gas is：60~120sccm；For making the etch chamber indoor described
Etching technics gas, which excites, to be formed the upper electrode power scope of plasma and is：1200~1600W；The back of the body of the Sapphire Substrate
Blowing cooling gas pressure limit is 2~3T；The lower electrode power scope is 200W~500W；The process for stabilizing stage when
Long scope is 10~20min.
9. the lithographic method of Sapphire Substrate according to claim 1, which is characterized in that in the over etching step,
The indoor operation pressure scope of etch chamber is：2~3mT；The range of flow of etching technics gas is：60~100sccm；For making
The indoor etching technics gas of etch chamber, which excites, to be formed the upper electrode power scope of plasma and is：1200~
1600W；The back of the body blowing cooling gas pressure limit of the Sapphire Substrate is 4~6T；The lower electrode power scope for 600W~
700W；The duration scope of the over etching step is 15~30min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611046850.0A CN108091559B (en) | 2016-11-23 | 2016-11-23 | Etching method of sapphire substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611046850.0A CN108091559B (en) | 2016-11-23 | 2016-11-23 | Etching method of sapphire substrate |
Publications (2)
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| CN110767568A (en) * | 2018-07-26 | 2020-02-07 | 北京北方华创微电子装备有限公司 | Pressure regulating assembly, lower electrode device, process chamber and semiconductor processing equipment |
| CN111755353A (en) * | 2019-03-26 | 2020-10-09 | 北京北方华创微电子装备有限公司 | Warming-up method and etching method |
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| US7141505B2 (en) * | 2003-06-27 | 2006-11-28 | Lam Research Corporation | Method for bilayer resist plasma etch |
| CN104253035A (en) * | 2013-06-27 | 2014-12-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
| CN105719963A (en) * | 2014-12-01 | 2016-06-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
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| CN104253035A (en) * | 2013-06-27 | 2014-12-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
| CN105719963A (en) * | 2014-12-01 | 2016-06-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
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| CN110767568B (en) * | 2018-07-26 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Pressure regulating assembly, lower electrode device, process chamber and semiconductor processing equipment |
| CN111755353A (en) * | 2019-03-26 | 2020-10-09 | 北京北方华创微电子装备有限公司 | Warming-up method and etching method |
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