CN106711033A - Substrate etching method - Google Patents
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- CN106711033A CN106711033A CN201510792034.3A CN201510792034A CN106711033A CN 106711033 A CN106711033 A CN 106711033A CN 201510792034 A CN201510792034 A CN 201510792034A CN 106711033 A CN106711033 A CN 106711033A
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- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 238000005530 etching Methods 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 65
- 238000007664 blowing Methods 0.000 claims abstract description 17
- 238000001816 cooling Methods 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims description 22
- 230000009467 reduction Effects 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims 1
- 230000001965 increasing effect Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a substrate etching method comprising a main etching step and an over etching step. The main etching step further comprises a step S1 and a step S2. When a corner appears in a graph sidewall, the step S1 is ended and the step S2 is simultaneously started. The over etching step comprises a step S3 and a step S4. When the height of the corner reaches the fixed value, the step S3 is ended and the step S4 is simultaneously started. The back blowing air pressure adopted for cooling a substrate in the step S1 and the step S4 is less than the back blowing air pressure adopted for cooling the substrate in the step S2 and the step S3. According to the substrate etching method, the bottom width of the substrate graph can be increased under the condition of having low influence on the height of the substrate graph so as to obtain the substrate graph of which the bottom width and the height meet the requirements.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular it relates to a kind of substrate etching method.
Background technology
Graphical sapphire substrate (Patterned Sapphire Substrate, abbreviation PSS) conduct
A kind of method of the raising GaN base LED component light extraction efficiency for generally using is extensive at present
Apply in LED preparation fields.Suitable figure pattern and size are to reduce epitaxial crystal
Defect, the necessary condition for improving internal quantum efficiency, preferably substrate figure is pyramidal structure at present,
Highly generally 1~2 μm, at intervals of 2~3 μm, bottom width is 2~3 μm, and side wall oblique angle is
31.6°。
ICP (Inductively Coupled Plasma, inductively coupled plasma) technology is
A kind of method for preparing sapphire pattern substrate, it is can control plasma density and bombardment
Energy, the advantages of be suitable to Automatic Network Matching during glow discharge and extensive use.The method is general
With BCl3Or CHF3Or the mixed gas of the two are used as reacting gas, and by controlling work
The parameter of pressure, reaction gas flow, magnetic field intensity and Dc bias etc., controls the quarter of technique
Erosion speed and uniformity, to cause that the height and bottom width of tpo substrate shape reach requirement.
A kind of existing regulative mode is the side using relatively low etch rate in technical process
Formula increases the bottom width of substrate figure.For example, in the case where being reduced during carrying out main etch step
Electrode power, this can reduce bombardment of the plasma to pattern side wall, such that it is able to increase cone
The bottom broadening of shape structure, and then reach the purpose for increasing bottom width.But, reduce etch rate
It is elongated to not only result in the process time, so as to reduce production efficiency, but also can be because in work
During skill, the turning excessive height formed in pattern side wall causes the turning in technique knot
Cannot be eliminated after beam, as shown in figure 1, being the tpo substrate obtained using relatively low etch rate
The scanning electron microscope (SEM) photograph of shape pattern.
Existing another regulative mode is blown using the back of the body higher by technical process
Air pressure reduces underlayer temperature, to reduce the volatilization of accessory substance, it is attached to side wall,
Such that it is able to increase the bottom width of substrate figure, but photoetching can be increased due to reducing underlayer temperature
The etch rate of glue, causes the height reduction of substrate figure, as shown in Fig. 2 being whole
In technical process, the ESEM of the substrate figure pattern of pressure acquisition of being blown using the back of the body higher
Figure, as shown in Figure 2, although figure bottom width is 2.75 μm, meets and requires, but figure is high
Degree is only 1.53 μm, is not reaching to claimed range (such as 1.6~1.7 μm).If conversely, carrying
Underlayer temperature high, although the height of substrate figure can be improved, but substrate figure can be caused
Bottom width reduces.Therefore, how to obtain bottom width and height is satisfied by the substrate figure of requirement, be
Current problem demanding prompt solution.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that
A kind of substrate etching method, its can on substrate figure height influence it is less in the case of,
Increase the bottom width of substrate figure, it is hereby achieved that bottom width and height are satisfied by desired tpo substrate
Shape.
A kind of substrate etching method is provided to realize the purpose of the present invention, including main etching step
Rapid and over etching step,
The main etch step further includes step S1 and step S2, when pattern side wall goes out
During existing turning, terminate the step S1, start simultaneously at the step S2；
The over etching step further includes step S3 and step S4, when the turning
When highly reaching fixed value, terminate the step S3, start simultaneously at the step S4；
Wherein, the back of the body for cooling down substrate that the step S1 and the step S4 are used
Pressure blow less than the back of the body for cooling down substrate that the step S2 and the step S3 are used
Blow and press.
Preferably, the step S1 and the step S4 are blown using first back of the body and press cooling
Substrate；The step S2 and the step S3 are blown using second back of the body and press cooling substrate；
First back of the body is blown to press and pressure of blowing is carried on the back less than described second.
Preferably, according to during the main etch step is carried out, the etching of mask is fast
Rate judges that the moment at turning occurs in pattern side wall.
Preferably, according to during the over etching step is carried out, the height at the turning
The reduction speed of degree judges that the height at the turning reaches the moment of fixed value.
Preferably, the span of the fixed value is in 200~400nm.
Preferably, the process time sum of the step S2 and the step S3 is
10~45min.
Preferably, the step S1 corresponding technique moment is the 0th minute~the 20th minute.
Preferably, the step S4 corresponding technique moment terminate for the 30th minute~technique.
Preferably, first back of the body blows the span pressed in 2~5Torr.
Preferably, second back of the body blows the span pressed in 4~8Torr.
The invention has the advantages that：
The substrate etching method that the present invention is provided, its main etch step includes step S1 and step
S2, and when turning occurs in the pattern side wall of substrate, end step S1 starts simultaneously at step
S2；Over etching step includes step S3 and step S4, and when the height at turning reaches fixed value
When, end step S3 starts simultaneously at step S4.Wherein, step S1 and step S4 are adopted
The back of the body for cooling down substrate blows pressure less than being used for that step S2 and step S3 is used
Cool down the back of the body air blowing pressure of substrate.Due in the whole process time, with the pattern side wall of substrate
There is the moment at turning as starting point (now step S2 starts), reached with the height at turning
To fixed value as end point (now step S3 complete) this time segment figure bottom width increasing
Rate of acceleration highest, therefore, reduce lining by blowing pressure using the back of the body higher in this time period
Bottom temperature, and remaining process time (step S1 and step S4) is blown using the relatively low back of the body
Press to improve underlayer temperature, the purpose of increase figure bottom width can be reached in shorter time, together
When time higher due to shortening mask etching speed, mask after main etch step can be increased
Residual thickness, thereby may be ensured that pattern height reaches claimed range, it is final obtain bottom width and
Highly it is satisfied by desired figure pattern.
Brief description of the drawings
Fig. 1 is the scanning electron microscope (SEM) photograph of the substrate figure pattern obtained using relatively low etch rate；
Fig. 2 is to blow to press the scanning electron microscope (SEM) photograph of the substrate figure pattern for obtaining using the back of the body higher；
Fig. 3 is the evolution process figure of substrate figure pattern；
Fig. 4 is the bottom width of substrate figure with the change curve of etch period；
Fig. 5 is the bottom width of substrate figure with the change curve for carrying on the back blow pressure power；And
Fig. 6 is the substrate figure obtained using substrate etching method provided in an embodiment of the present invention
The scanning electron microscope (SEM) photograph of pattern.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, tie below
Accompanying drawing is closed to be described in detail the substrate etching method that the present invention is provided.
The substrate etching method that the present invention is provided is carried out using existing plasma processing device
Etching technics, it is preferred that the plasma processing device can set for inductively coupled plasma
Standby, it mainly includes reaction chamber, inductance coil, upper radio system and lower radio system.Its
In, the bogey for carrying substrate, such as pedestal, machinery are provided with reaction chamber
Chuck or electrostatic chuck etc..Upper radio system is used to apply Top electrode work(to inductance coil
Rate, plasma is formed to the etching gas in provocative reaction chamber；Lower radio system is used for
Apply lower electrode power to substrate, so that plasma etched features on substrate.
And, during technique is performed etching, to substrate lower surface and bogey
Gap conveying back of the body blowing (such as helium) between loading end, is used to be carried out by with substrate
Heat exchange and cool down substrate, the pressure that the back of the body blowing applies towards substrate lower surface is referred to as the back of the body and blows
Air pressure.It is readily appreciated that, the back of the body is blown, and pressure is higher, then underlayer temperature is lower；The pressure conversely, back of the body is blown
Lower, then underlayer temperature is higher.Therefore, by adjusting back of the body air blowing pressure, it is possible to achieve to substrate
The control of temperature, such that it is able to fast and effeciently adjust the height and bottom width of substrate figure.This hair
The substrate etching method of bright offer, comprises the following steps：
Main etch step (Main Etch, ME), for modifying mask pattern, while etching
Form the base profile of figure.
Over etching step (Over Etch, OE), (side wall and turns for modifying figure pattern
Angle) so that its size and dimension reaches technological requirement.
Wherein, when main etch step is carried out, etching ion is moved towards approximate 45 ° of direction,
This causes that the sidewall profile of substrate figure is gradually changed in etching process.Specifically, carving
The starting stage of erosion, due to being limited by mask original sidewall, the side wall of substrate figure hang down
Straight degree is higher；However, with the increase of etch period, two relative side walls of mask can direction
Laterally shrink, cause the width of mask to become narrow gradually, this cause the side wall of substrate figure because
The cross-direction shrinkage of mask and there is turning.In main etch step, the chamber pressure of reaction chamber
Scope in 2~5mT；The scope of upper electrode power is in 1000~2500W；Lower electrode power
Scope is in 100~700W；The range of flow of etching gas is in 60~200sccm；Process time
Scope in 15~40min.
Over etching step uses relatively low chamber pressure and substrate bias power higher, is used to improve
Physical bombardment energy, so that the turning of substrate side wall is progressively smaller until disappearance, so that substrate
Figure pattern reaches technological requirement.In over etching step, the model of the chamber pressure of reaction chamber
It is trapped among 1.5~3mT；The scope of upper electrode power is in 1000~2500W；The model of lower electrode power
It is trapped among 500~800W；The range of flow of etching gas is in 60~100sccm；Process time
Scope is in 10~20min.
Further, above-mentioned main etch step includes step S1 and step S2, when figure side
When turning occurs in wall, end step S1 starts simultaneously at step S2.Over etching step includes step
Rapid S3 and step S4, when the height at turning reaches fixed value, end step S3, while
Start step S4.Wherein, the back of the body for cooling down substrate that step S1 and step S4 are used
Pressure of blowing is blown less than the back of the body for cooling down substrate that step S2 and step S3 is used and is pressed.
Also, step S1 and step S4 are blown using first back of the body and press cooling substrate；Step S2 and
Step S3 is blown using second back of the body and presses cooling substrate.That is, step S1 and step
The back of the body of S4 is blown, and pressure is identical, and rapid S2 is identical with the back of the body of step S3 air blowing pressure, and step S1
Blown with the back of the body that step S4 is used and press (the first back of the body air blowing pressure) to be adopted less than rapid S2 and step S3
The back of the body is blown and is pressed (second back of the body is blown and pressed).
Due in the whole process time, when there is turning with the pattern side wall of substrate
As starting point (now step S2 starts), fixed value as knot is reached using the height at turning
The highest of advancing the speed of spot (now step S3 is completed) this time segment figure bottom width, because
This, reduces underlayer temperature by blowing pressure using the back of the body higher within this time period, and its
Remaining process time (step S1 and step S4) blows pressure to improve substrate using the relatively low back of the body
Temperature, can reach the purpose of increase figure bottom width in shorter time.Furtherly, although
The height of substrate figure will certainly be reduced using the back of the body higher pressure of blowing, but, due to using compared with
The back of the body high is blown, and this time period of pressure is shorter, and this causes that the reduction degree of pattern height is smaller, from
And still can reach technological requirement scope.Simultaneously as within the time period figure bottom width
Advance the speed most fast, even if time shorter remaining on can make figure bottom width increase to technological requirement
In the range of, it is final to obtain bottom width and be highly satisfied by desired figure pattern.
It should be noted that in the present embodiment, the back of the body of step S1 and step S4 is blown and is pressed
Identical, step S2 is identical with the back of the body of step S3 air blowing pressure.But the invention is not limited in
This, in actual applications, the back of the body air blowing pressure of step S1 and step S4 can also be according to specific
Situation is designed as difference.Likewise, the back of the body air blowing pressure of step S2 and step S3 can also root
Difference is designed as according to concrete condition.
Preferably, the process time sum of above-mentioned steps S2 and step S3 is 10~45min.
The step S1 corresponding technique moment is the 0th minute~the 20th minute.The corresponding works of step S4
The skill moment terminated for the 30th minute~technique.First back of the body blows the span pressed in 2~5Torr.
Second back of the body blows the span pressed in 4~8Torr.
From the foregoing, it will be observed that the substrate etching method that the present invention is provided is using underlayer temperature higher
Under the conditions of can promote pattern height increase, figure bottom width reduce；Relatively low underlayer temperature can condition
Under figure bottom width can be promoted to increase, pattern height is the characteristics of reduce, by targetedly in figure
This time period of highest of advancing the speed of shape bottom width uses back of the body blow pressure power higher, to reduce substrate
Temperature, can reach the purpose of increase figure bottom width, simultaneously because shortening in shorter time
The mask etching speed time higher, the residual thickness of mask after main etch step can be increased,
Thereby may be ensured that pattern height reaches claimed range, it is final to obtain bottom width and be highly satisfied by wanting
The figure pattern asked.
As shown in figure 3, being the evolution process figure of substrate figure pattern.The work of main etch step
Skill parameter is：The chamber pressure of reaction chamber is 3mT；Upper electrode power is 1600W；Under
Electrode power is 500W；The flow of etching gas is 120sccm；Process time is 20min.
The technological parameter of over etching step is：The chamber pressure of reaction chamber is 2.5mT；Top electrode work(
Rate is 1600W；Lower electrode power is 700W；The flow of etching gas is 70sccm；Work
The skill time is 25min.
In main etch step, within the 0th minute~the 15th minute this period, due to turning
Angle does not occur also, angle (hereinafter referred to as side wall angle) base between the side wall of figure and base
This is constant, therefore, the bottom width substantially constant of figure.Turning was will appear from the 15th minute.
Within the 15th minute~the 20th minute this period, turning occurs, and moves gradually downward,
So that side wall angle is tapered into, so that the broadening of figure gradually increases.
Over etching step was initially entered from the 20th minute, in this step, due to bottom electrode work(
Rate is improved, and this causes that the bombardment of plasma acts on enhancing, and figure base edge inside contracts quickening,
So that side wall angle increases, advancing the speed for bottom width is slack-off.Since the 30th minute,
Close to 90 °, now advancing the speed for bottom width is basically unchanged side wall angle.By above-mentioned tpo substrate
It is with side wall angle that the evolution process of shape pattern can be seen that advancing the speed for figure bottom width
Change and change, i.e. side wall angle is bigger, then figure bottom width advance the speed it is slower；Conversely,
Side wall angle is smaller, then figure bottom width advance the speed it is faster.
Fig. 4 is the bottom width of substrate figure with the change curve of etch period.Fig. 5 is substrate
The bottom width of figure is with the change curve for carrying on the back blow pressure power.From Fig. 4 and Fig. 5, the 15th point
The figure bottom width increase speed of this time period of clock~30th minute is most fast, i.e.,：Main etch step
The moment that middle turning occurs is the starting point of the quick increase of bottom width, and turning is highly in over etching step
The moment for being reduced to 300nm or so is the end point that bottom width quickly increases, by targeted
Ground blows pressure to reduce underlayer temperature within the time period using the back of the body higher, can effectively increase
Figure bottom width.
Preferably, in main etch step, due to when turning occurs, remaining mask
(such as photoresist) thickness substantially constant, in 1.3um or so.Therefore, it can basis entering
During row main etch step, the etch rate of mask judge pattern side wall occur turning when
Carve, with the starting point that this determination bottom width quickly increases.
Additionally, it is preferred that, in over etching step, due to the end point base that bottom width quickly increases
This is constant in turning height reduction to this moment of a fixed value, and the span of the fixed value exists
200~400nm, such as 300nm, therefore, it can be judged according to the reduction speed of turning height
The height at the turning reaches the moment of fixed value, with the end point that this determination bottom width quickly increases.
One specific embodiment of the substrate etching method for being provided for the present invention below, the substrate
Lithographic method specifically includes following steps：
Main etch step, it further includes step ME1 and step ME2, wherein,
The technological parameter of step ME1 is：The chamber pressure of reaction chamber is 2.5mT；Upper electricity
Pole power is 1400W；Lower electrode power is 350W；The flow of etching gas is 80sccm；
Process time is 18min；The back of the body blows pressure for 4Torr.
The technological parameter of step ME2 is：The chamber pressure of reaction chamber is 2.5mT；Upper electricity
Pole power is 1400W；Lower electrode power is 350W；Etching gas are 80sccm；Technique
Time is 7min；The back of the body blows pressure for 6Torr.
Over etching step, it further includes step OE1 and step OE2, wherein,
The technological parameter of step OE1 is：The chamber pressure of reaction chamber is 2.2mT；Upper electricity
Pole power is 1400W；Lower electrode power is 500W；The flow of etching gas is 60sccm；
Process time is 5min；The back of the body blows pressure for 6Torr.
The technological parameter of step OE2 is：The chamber pressure of reaction chamber is 2.2mT；Upper electricity
Pole power is 1400W；Lower electrode power is 500W；Etching gas are 60sccm；Technique
Time is 8min；The back of the body blows pressure for 4Torr.
Under the technological parameter of above-mentioned steps ME1, the etch rate of mask is about
70nm/min, for the photoresist (being used as mask) of 2.6um, according to etching speed
Rate, can extrapolate when carrying out to the 18th minute the process time, the surplus glue thickness of photoresist
1.3um is can reach, the starting point using back of the body blow pressure power higher is now.In above-mentioned steps
Under the technological parameter of OE2, the reduction speed of turning height is about 40nm/min, according to this
Speed can be extrapolated out when carrying out to the 30th minute the process time, the reduction of turning height
To 300nm or so (such as 325nm), the knot using back of the body blow pressure power higher is now
Spot.
Fig. 6 is the substrate figure obtained using substrate etching method provided in an embodiment of the present invention
The scanning electron microscope (SEM) photograph of pattern.It will be appreciated from fig. 6 that using substrate etching provided in an embodiment of the present invention
The substrate figure that method is obtained, it is highly 1.67um；Bottom width is 2.69um, reaches work
The scope of skill requirement.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and
The illustrative embodiments of use, but the invention is not limited in this.For in the art
For those of ordinary skill, without departing from the spirit and substance in the present invention, can do
Go out all variations and modifications, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of substrate etching method, including main etch step and over etching step, its feature
It is,
The main etch step further includes step S1 and step S2, when pattern side wall goes out
During existing turning, terminate the step S1, start simultaneously at the step S2；
The over etching step further includes step S3 and step S4, when the turning
When highly reaching fixed value, terminate the step S3, start simultaneously at the step S4；
Wherein, the back of the body for cooling down substrate that the step S1 and the step S4 are used
Pressure blow less than the back of the body for cooling down substrate that the step S2 and the step S3 are used
Blow and press.
2. substrate etching method according to claim 1, it is characterised in that the step
The rapid S1 and step S4 is blown using first back of the body and presses cooling substrate；The step S2 and
The step S3 is blown using second back of the body and presses cooling substrate；First back of the body air blowing pressure is less than
Second back of the body is blown and is pressed.
3. substrate etching method according to claim 1, it is characterised in that according to
During carrying out the main etch step, the etch rate of mask judges that turning occurs in pattern side wall
The moment at angle.
4. substrate etching method according to claim 1, it is characterised in that according to
During carrying out the over etching step, the reduction speed of the height at the turning judges described
The height at turning reaches the moment of fixed value.
5. substrate etching method according to claim 1, it is characterised in that described solid
The span of definite value is in 200~400nm.
6. substrate etching method according to claim 1, it is characterised in that the step
The process time sum of the rapid S2 and step S3 is 10~45min.
7. substrate etching method according to claim 6, it is characterised in that the step
The rapid S1 corresponding technique moment is the 0th minute~the 20th minute.
8. substrate etching method according to claim 6, it is characterised in that the step
The rapid S4 corresponding technique moment terminated for the 30th minute~technique.
9. substrate etching method according to claim 2, it is characterised in that described
One back of the body blows the span pressed in 2~5Torr.
10. substrate etching method according to claim 2, it is characterised in that described
Two back ofs the body blow the span pressed in 4~8Torr.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110867503A (en) * | 2018-08-28 | 2020-03-06 | 北京北方华创微电子装备有限公司 | Manufacturing method of patterned substrate, patterned substrate and light emitting diode |
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| CN110867503B (en) * | 2018-08-28 | 2021-06-08 | 北京北方华创微电子装备有限公司 | Manufacturing method of patterned substrate, patterned substrate and light emitting diode |
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