CN104253035A - Substrate etching method - Google Patents
Substrate etching method Download PDFInfo
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- CN104253035A CN104253035A CN201310262527.7A CN201310262527A CN104253035A CN 104253035 A CN104253035 A CN 104253035A CN 201310262527 A CN201310262527 A CN 201310262527A CN 104253035 A CN104253035 A CN 104253035A
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- 239000000758 substrate Substances 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 87
- 238000005530 etching Methods 0.000 title claims abstract description 84
- 230000005284 excitation Effects 0.000 claims abstract description 18
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 10
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a substrate etching method. The substrate etching method comprises the following steps that: a first etching step, etching gas and auxiliary gas are injected into a reaction chamber, and an excitation power source and a bias power source are switched on, so that processing time of substrate etching can be predetermined, wherein the predetermined processing time is a time period from a time point when etching begins and a time point when a mask begins transverse shrinkage, and the auxiliary gas includes fluorocarbon gas; and a second etching steps, the injection of the auxiliary gas into the reaction chamber is stopped, and at the same time, the etching gas is continued to be injected into to the reaction chamber, and the switched-on states of the excitation power source and the bias power source are maintained until predetermined etching depth is accomplished. With the substrate etching method provided by the invention adopted, side wall corners can be eliminated, so that a substrate can be in an ideal shape, and production efficiency can be improved.
Description
Technical field
The present invention relates to microelectronics technology, particularly a kind of substrate lithographic method.
Background technology
PSS (Patterned Sapp Substrates, graphical sapphire substrate) technology is the method that the one generally adopted at present improves the light extraction efficiency of GaN (gallium nitride) base LED component.In the process of carrying out PSS technique, it grows dry etching mask usually on substrate, and adopts photoetching process that mask is carved figure; Then adopt ICP technology etching substrate surface, to form the figure of needs, then remove mask, and adopt growing GaN film on epitaxy technique substrate surface after etching.As shown in Figure 1, its section shape is approximately triangle to the desirable pattern that employing ICP technology etching substrate surface obtains, and the radian of sidewall is little, and this is conducive to follow-up epitaxy technique, thus can improve the crystal mass of extension GaN film.
Existing a kind of substrate etching technics adopts single step lithographic method, particularly, in reaction chamber, passes into BCl
3(boron chloride) gas, and open excitation power supply and grid bias power supply, until complete the etching depth needed for technique.The typical technological parameter of this technique is: the scope of the chamber pressure of reaction chamber is at 2 ~ 5mT; The scope of exciting power is at 1000 ~ 2500W; The scope of substrate bias power is at 100 ~ 700W; BCl
3range of flow at 60 ~ 200sccm; The scope of process time is at 15 ~ 40min.
It is leg-of-mutton desirable pattern that above-mentioned substrate etching technics is difficult to obtain section in actual applications, this is because: because this etching technics is mainly based on physical etchings, etching ion moves towards the direction of approximate 45 °, this makes the sidewall profile of substrate can produce following change in etching process, that is: in the starting stage of etching, owing to being subject to the restriction of mask original sidewall, the perpendicularity of substrate sidewall is higher; But along with the increase of process time, relative two sidewalls of mask can cross-direction shrinkage toward each other, and cause the width of mask to narrow gradually, this makes substrate sidewall occur turning because of the cross-direction shrinkage of mask, as shown in Figure 2 A and 2B.
For this reason, whole etching process can be divided into main etch step and over etching step, that is, using above-mentioned etching technics as main etch step, and after completing above-mentioned etching technics, increase by an over etching step.Particularly, this over etching step adopts lower chamber pressure and higher substrate bias power, in order to improve physical bombardment energy, reduces gradually until disappear to make the turning of substrate sidewall.The technological parameter of this etching technics is: in main etch step, and the scope of the chamber pressure of reaction chamber is at 2 ~ 5mT; The scope of exciting power is at 1000 ~ 2500W; The scope of substrate bias power is at 100 ~ 700W; BCl
3range of flow at 60 ~ 200sccm; The scope of process time is at 15 ~ 40min.In over etching step, the scope of the chamber pressure of reaction chamber is at 1.5 ~ 3mT; The scope of exciting power is at 1000 ~ 2500W; The scope of substrate bias power is at 500 ~ 800W; BCl
3range of flow at 60 ~ 100sccm; The scope of process time is at 10 ~ 20min.As shown in Figure 3, the profile of substrate pattern for obtaining after completing over etching step.By over etching step, can realize regulating the sidewall profile of substrate, final acquisition section is leg-of-mutton desirable pattern.
But, there is following problem in actual applications in above-mentioned substrate etching technics, that is: because the process time of over etching step is 10 ~ 20min, it is about 2/3rds of the process time (15 ~ 40min) of main etch step, therefore, above-mentioned substrate etching technics causes process efficiency greatly to reduce because adding over etching step, thus causes the production efficiency of whole technique to reduce.And, in the process of carrying out over etching step, owing to substantially there is not mask in substrate, cause the height of substrate sidewall can reduce gradually in etching process, although the height of substrate sidewall can be made to have certain remaining when carrying out follow-up over etching step by the mode of the height increasing the substrate sidewall that main etch step obtains, but, this just requires that main etch step has higher etching selection ratio and longer process time, thus not only reduce process window, and reduce the production efficiency of whole technique.
In order to can ensure production efficiency prerequisite under, eliminate the turning of substrate sidewall, following principle can be applied, that is: in the process of carrying out main etch step, sidewall corner is there will be when mask starts cross-direction shrinkage, and the position that this turning occurs is higher, over etching step more needs the process time more grown to eliminate sidewall corner.Based on this principle, the time point shunk if mask can be started in advance, then can reduce the position that turning occurs on sidewall, thus makes over etching step adopt the shorter process time just can eliminate turning.Therefore, can adopt higher substrate bias power in the leading portion process of main etch step, to strengthen the bombardment dynamics of ion, thus the time point that mask can be started to shrink shifts to an earlier date; And reduce substrate bias power when mask starts to shrink, until obtain complete substrate pattern.The technological parameter of the substrate etching technics of employing said method is: in main etch step, and before mask starts to shrink, the scope of the chamber pressure of reaction chamber is at 2 ~ 5mT; The scope of exciting power is at 1000 ~ 2500W; The scope of substrate bias power is at 400 ~ 700W; BCl
3range of flow at 60 ~ 200sccm; The scope of process time is at 3 ~ 10min.When mask starts to shrink, substrate bias power drops to 100 ~ 400W; The scope of process time at 10 ~ 25min, all the other parameter constants.
By adopting above-mentioned substrate lithographic method, the process time of over etching step can be foreshortened to 3 ~ 8min, that is, shortening about 5min, thus can enhance productivity.But because above-mentioned substrate lithographic method must adopt higher substrate bias power in the leading portion process of main etch step, this can cause etching selection ratio to reduce, thus the height of the substrate sidewall causing main etch step to obtain is lower.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, and propose a kind of substrate lithographic method, it not only can eliminate sidewall corner, to obtain desirable substrate pattern, and can enhance productivity.
Thering is provided a kind of substrate lithographic method for realizing object of the present invention, comprising the following steps:
First etch step, passes into etching gas and assist gas to reaction chamber, and opens excitation power supply and grid bias power supply, and to etch the predetermined process time to substrate, wherein, the described predetermined process time is from starting to be etched to the time period that mask starts cross-direction shrinkage; Described assist gas comprises fluorocarbon gas;
Second etch step, stops in reaction chamber, pass into described assist gas, continues to pass into etching gas to reaction chamber simultaneously, and keeps excitation power supply and grid bias power supply to open, until complete predetermined etching depth.
Preferably, described fluorocarbon gas comprises C
4f
8, C
5f
8and C
4f
6in one or more.
Preferably, in described first etch step, the scope of described predetermined process time is at 5 ~ 15min.
Preferably, in first, second etch step described, described etching gas comprises boron chloride.
Preferably, in described first etch step, the range of flow of described etching gas is at 60 ~ 100sccm.
Preferably, in described first etch step, the range of flow of described assist gas is at 5 ~ 10sccm.
Preferably, in described first etch step, the scope of described excitation power supply output drive power is at 1000 ~ 2500W.
Preferably, in described first etch step, the scope of the chamber pressure of described reaction chamber is at 1.5 ~ 3mT.
Preferably, in first, second etch step described, described grid bias power supply exports the scope of substrate bias power at 500 ~ 800W.
Preferably, in described second etch step, the range of flow of described etching gas is at 60 ~ 100sccm.
Preferably, in described second etch step, the scope of the chamber pressure of described reaction chamber is at 1.5 ~ 3mT.
Preferably, in described second etch step, the scope of described excitation power supply output drive power is at 1000 ~ 2500W.
Preferably, in described second etch step, the process time is 5 ~ 15min.
The present invention has following beneficial effect:
Substrate lithographic method provided by the invention, its first etch step is by starting in the time period of cross-direction shrinkage certainly starting to be etched to mask, while passing into etching gas to reaction chamber, pass into the fluorocarbon gas as assist gas of predetermined amount of flow, because fluorocarbon gas can produce containing carbon polymer in reaction chamber, and be deposited on substrate sidewall, this can play the effect that protective side wall is not etched, thus the side wall slope that can improve before mask starts cross-direction shrinkage, with make itself and mask start cross-direction shrinkage after side wall slope basically identical, and then can sidewall corner be eliminated.And owing to being deposited on can not be etched by protective side wall containing carbon polymer on substrate sidewall, this can improve etching selection ratio, thus can improve the height of substrate sidewall.
After mask starts cross-direction shrinkage, carry out the second etch step, this etch step is by stopping passing into above-mentioned assist gas to reaction chamber, continue to pass into etching gas to reaction chamber simultaneously, and keep excitation power supply and grid bias power supply to open, until complete predetermined etching depth, directly can obtain section is leg-of-mutton desirable pattern, and help the sidewall profile of over etching step to substrate to regulate without the need to relending, thus the process time can be reduced, and then can process efficiency be improved.
Accompanying drawing explanation
The scanning electron microscope (SEM) photograph of Fig. 1 for adopting ICP technology to etch the desirable pattern that substrate surface obtains;
Fig. 2 A is the etching process schematic diagram of existing a kind of substrate lithographic method;
Fig. 2 B is the scanning electron microscope (SEM) photograph of the substrate sidewall occurring turning;
Fig. 3 is the scanning electron microscope (SEM) photograph occurring the substrate sidewall that the substrate sidewall at turning obtains after carrying out over etching step;
Fig. 4 is the FB(flow block) of substrate lithographic method provided by the invention; And
Fig. 5 is the etching process schematic diagram of substrate lithographic method provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, substrate lithographic method provided by the invention is described in detail.
Fig. 4 is the FB(flow block) of substrate lithographic method provided by the invention.Refer to Fig. 4, the method comprises the following steps:
First etch step, passes into etching gas and assist gas to reaction chamber, and opens excitation power supply (such as radio-frequency power supply), and excitation power supply applies exciting power to reaction chamber, excites formation plasma to make the etching gas in reaction chamber; Open grid bias power supply, grid bias power supply applies substrate bias power to substrate, to etch the predetermined process time to substrate.
Second etch step, stops passing into assist gas in reaction chamber, continues to pass into etching gas to reaction chamber simultaneously, and keeps excitation power supply and grid bias power supply to open, until complete predetermined etching depth.
In the first etch step, the predetermined process time is that preferably, the scope of predetermined process time is at 5 ~ 15min from starting to be etched to the time period that mask starts cross-direction shrinkage; Etching gas comprises BCl
3; Assist gas comprises fluoride gas, and it comprises C
4f
8, C
5f
8and C
4f
6in one or more.Preferably, the technological parameter of the first etch step is: the range of flow of etching gas is at 60 ~ 100sccm; The range of flow of assist gas is at 5 ~ 10sccm; The scope of excitation power supply output drive power is at 1000 ~ 2500W; The scope of the chamber pressure of reaction chamber is at 1.5 ~ 3mT; Grid bias power supply exports the scope of substrate bias power at 500 ~ 800W.
In a second etching step, etching gas comprises BCl
3, preferably, the technological parameter of the second etch step is: the range of flow of etching gas is at 60 ~ 100sccm; The scope of the chamber pressure of reaction chamber is at 1.5 ~ 3mT; The scope of excitation power supply output drive power is at 1000 ~ 2500W; Grid bias power supply exports the scope of substrate bias power at 500 ~ 800W; Process time is 5 ~ 15min.
Below in conjunction with Fig. 5, the principle of substrate lithographic method provided by the invention and effect are described in detail.Particularly, owing to there is the reason at turning mainly on the sidewall of substrate: the front and back that the slope of sidewall starts cross-direction shrinkage at mask are different, namely, side wall slope before mask starts cross-direction shrinkage start cross-direction shrinkage higher than mask after side wall slope, therefore, if start in the time period of cross-direction shrinkage certainly starting to be etched to mask, the slope of sidewall can be reduced, with make itself and mask start cross-direction shrinkage after side wall slope basically identical, can sidewall corner be eliminated.
Based on above-mentioned principle, substrate lithographic method provided by the invention, its first etch step is by starting in the time period of cross-direction shrinkage certainly starting to be etched to mask, while passing into etching gas to reaction chamber, pass into the fluorocarbon gas as assist gas, because fluorocarbon gas can produce containing carbon polymer in reaction chamber, and be deposited on substrate sidewall, this can play the effect that protective side wall is not etched, thus the side wall slope that can improve before mask starts cross-direction shrinkage, and, by selecting kind and the gas flow of suitable fluorocarbon gas, can make itself and mask start cross-direction shrinkage after the side wall slope that formed basically identical, and then can sidewall corner be eliminated.And owing to being deposited on can not be etched by protective side wall containing carbon polymer on substrate sidewall, this can improve etching selection ratio, thus can improve the height of substrate sidewall.
After mask starts cross-direction shrinkage, carry out the second etch step, this etch step is by stopping passing into above-mentioned assist gas to reaction chamber, continue to pass into etching gas to reaction chamber simultaneously, and keep excitation power supply and grid bias power supply to open, until complete predetermined etching depth, directly can obtain section is leg-of-mutton desirable pattern, and help the sidewall profile of over etching step to substrate to regulate without the need to relending, thus the process time can be reduced, and then can process efficiency be improved.
It should be noted that, in actual applications, the predetermined process time of the first etch step can be set by the mode of etching experiment, that is, determine from starting to be etched to the time period that mask starts cross-direction shrinkage.Particularly, single step lithographic method can be adopted to carry out etching experiment, in experimentation, first rule of thumb estimate the time lower limit that mask starts cross-direction shrinkage; Under the process time arrives this time in limited time, whether the substrate sidewall observed now exists turning, if so, then continue etching substrate unit etch period, and then whether the substrate sidewall observed after unit etch period exists turning; Repeat the process of above-mentioned observation and etching until turning disappears; The etch period that record turning disappears, is from starting to be etched to the time period that mask starts cross-direction shrinkage.Above-mentioned unit etch period can set, such as 2 minutes according to the etching precision of ICP equipment.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (13)
1. a substrate lithographic method, is characterized in that, comprises the following steps:
First etch step, passes into etching gas and assist gas to reaction chamber, and opens excitation power supply and grid bias power supply, and to etch the predetermined process time to substrate, wherein, the described predetermined process time is from starting to be etched to the time period that mask starts cross-direction shrinkage; Described assist gas comprises fluorocarbon gas;
Second etch step, stops in reaction chamber, pass into described assist gas, continues to pass into etching gas to reaction chamber simultaneously, and keeps excitation power supply and grid bias power supply to open, until complete predetermined etching depth.
2. substrate lithographic method as claimed in claim 1, it is characterized in that, described fluorocarbon gas comprises C
4f
8, C
5f
8and C
4f
6in one or more.
3. substrate lithographic method as claimed in claim 1, it is characterized in that, in described first etch step, the scope of described predetermined process time is at 5 ~ 15min.
4. substrate lithographic method as claimed in claim 1, it is characterized in that, in first, second etch step described, described etching gas comprises boron chloride.
5. substrate lithographic method as claimed in claim 1, it is characterized in that, in described first etch step, the range of flow of described etching gas is at 60 ~ 100sccm.
6. substrate lithographic method as claimed in claim 1, it is characterized in that, in described first etch step, the range of flow of described assist gas is at 5 ~ 10sccm.
7. substrate lithographic method as claimed in claim 1, it is characterized in that, in described first etch step, the scope of described excitation power supply output drive power is at 1000 ~ 2500W.
8. as right wants the substrate lithographic method as described in 1, it is characterized in that, in described first etch step, the scope of the chamber pressure of described reaction chamber is at 1.5 ~ 3mT.
9. substrate lithographic method as claimed in claim 1, is characterized in that, in first, second etch step described, described grid bias power supply exports the scope of substrate bias power at 500 ~ 800W.
10. substrate lithographic method as claimed in claim 1, it is characterized in that, in described second etch step, the range of flow of described etching gas is at 60 ~ 100sccm.
11. substrate lithographic methods as claimed in claim 1, it is characterized in that, in described second etch step, the scope of the chamber pressure of described reaction chamber is at 1.5 ~ 3mT.
12. substrate lithographic methods as claimed in claim 1, is characterized in that, in described second etch step, the scope of described excitation power supply output drive power is at 1000 ~ 2500W.
13. substrate lithographic methods as claimed in claim 1, is characterized in that, in described second etch step, the process time is 5 ~ 15min.
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|---|---|---|---|
| CN201310262527.7A CN104253035A (en) | 2013-06-27 | 2013-06-27 | Substrate etching method |
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| CN201310262527.7A CN104253035A (en) | 2013-06-27 | 2013-06-27 | Substrate etching method |
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ID=52187834
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| CN106711033A (en) * | 2015-11-17 | 2017-05-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
| CN108091559A (en) * | 2016-11-23 | 2018-05-29 | 北京北方华创微电子装备有限公司 | A kind of lithographic method of Sapphire Substrate |
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| CN108091559A (en) * | 2016-11-23 | 2018-05-29 | 北京北方华创微电子装备有限公司 | A kind of lithographic method of Sapphire Substrate |
| CN108091559B (en) * | 2016-11-23 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Etching method of sapphire substrate |
| CN111968912A (en) * | 2020-08-24 | 2020-11-20 | 北京北方华创微电子装备有限公司 | Polyimide etching method |
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