CN103915330A - Substrate etching method - Google Patents
Substrate etching method Download PDFInfo
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- CN103915330A CN103915330A CN201310007774.2A CN201310007774A CN103915330A CN 103915330 A CN103915330 A CN 103915330A CN 201310007774 A CN201310007774 A CN 201310007774A CN 103915330 A CN103915330 A CN 103915330A
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- 239000000758 substrate Substances 0.000 title claims abstract description 209
- 238000005530 etching Methods 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000006243 chemical reaction Methods 0.000 claims abstract description 53
- 230000005284 excitation Effects 0.000 claims abstract description 25
- 239000006227 byproduct Substances 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 51
- 239000001301 oxygen Substances 0.000 claims description 51
- 229910052760 oxygen Inorganic materials 0.000 claims description 51
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 46
- 239000007789 gas Substances 0.000 claims description 44
- 239000012495 reaction gas Substances 0.000 claims description 36
- 238000009832 plasma treatment Methods 0.000 claims description 34
- 239000001307 helium Substances 0.000 claims description 26
- 229910052734 helium Inorganic materials 0.000 claims description 26
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 26
- 239000003595 mist Substances 0.000 claims description 26
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 23
- 239000000460 chlorine Substances 0.000 claims description 23
- 229910052801 chlorine Inorganic materials 0.000 claims description 23
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 230000035484 reaction time Effects 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 21
- 238000012876 topography Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 238000002161 passivation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000003467 diminishing effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a substrate etching method. The substrate etching method comprises the following steps of etching a substrate, wherein etching gas is injected into a reaction chamber, an excitation power supply and a grid bias power supply are started to etch the substrate at preset etching depth; processing plasma, wherein the etching gas is stopped from being injected into the reaction chamber, meanwhile, processing gas is injected into the reaction chamber, the grid bias power supply is turned off, and the processing gas is used for removing a part of reaction by-products accumulated on the side wall of the substrate; the steps of etching the substrate is carried out cyclically for at least two times, and one time of the step of processing the plasma is carried out with at least one cyclical time in the total cyclical times in the step of etching the substrate as an interval. According to the substrate etching method, under the premise that substrate etched appearance with an ideal depth-to-width ratio is obtained, etching steps can be simplified, etching equipment does not need to be changed, and thus the manufacturing cost of the equipment can be lowered.
Description
Technical field
The present invention relates to microelectronics technology, particularly a kind of substrate lithographic method.
Background technology
In recent years, along with the increase of semiconductor device integrated level, the gradually miniaturization of the size of discrete component, this has just had higher requirement to the etching technics of etching shallow trench on substrate, can obtain the substrate etch topography with desirable depth-to-width ratio.
At present, people adopt a kind of method of continuity etching to carry out etching to substrate conventionally, that is, a step completes the total etching depth to substrate etching, and by regulating the parameter of flow etc. of exciting power, etching gas (as, HeO) to improve the slickness of the sidewall pattern of substrate groove.But, carrying out substrate etching technics, especially carrying out process node while being 32nm and following substrate etching technics, the byproduct of reaction that reaction produces can be in the sidewall rapid accumulation of the hard mask layer of substrate groove, cause the opening size of substrate groove to diminish, thereby cause the quantity that enters the plasma in groove to reduce, and then the critical size (as groove width) of substrate groove is sharply dwindled with the increase of etching depth, thereby cannot obtain the substrate etch topography with desirable depth-to-width ratio.In addition, because the byproduct of reaction being deposited on hard mask layer sidewall also can increase the electric charge being accumulated on hard mask layer, the electric field action that electric charge produces can cause the etching direction of plasma to be departed from towards trenched side-wall by original vertical direction, occurs recessed etch topography thereby cause on trenched side-wall.
In order to obtain desirable substrate etch topography, people also adopt another kind of substrate lithographic method, as shown in Figure 2, and the groove pattern schematic diagram of substrate while carrying out each operation for existing another kind of substrate lithographic method.This substrate lithographic method mainly comprises following operation:
(a) use the etching procedure containing hydrogen halide.The substrate 102 that exposes mask 101 is etched into desired depth.
(b) etching procedure of use fluoro-gas.That is, etching gas is replaced by fluoro-gas, and further etching substrate.
(c) diaphragm forms operation.Adopt the method for sputter on substrate 102, to form diaphragm 103, diaphragm 103 is deposited on the top of mask 101 and sidewall and the bottom of groove 104.
(d) diaphragm removing step.Only retain the diaphragm 103 on the sidewall 104a of groove 104, and remaining diaphragm 103 is removed.
(e) repeating step (b), (c) and (d), until the groove of substrate reaches the required etching depth of technique.
Although above-mentioned substrate lithographic method can obtain the substrate etch topography with desirable depth-to-width ratio to a certain extent,, inevitably there is in actual applications following problem in it:
One, because the etch step of above-mentioned substrate lithographic method is numerous and diverse, easily causes the contamination particle that drops in the process of whole substrate etching, thereby causes substrate contaminated, and then reduced the yields of product.
Its two, be to adopt the mode of sputter on substrate, to form diaphragm because the diaphragm of above-mentioned substrate lithographic method forms operation, this mode need to be carried out particular design to etching apparatus, to make it have sputter function, thereby causes the manufacturing cost of equipment to increase.
Summary of the invention
The present invention is intended at least solve one of technical problem existing in prior art, a kind of substrate lithographic method has been proposed, it has in acquisition under the prerequisite of substrate etch topography of desirable depth-to-width ratio, not only can simplify etch step, and without etching apparatus being done to any change, thereby can reduce the manufacturing cost of equipment.
Provide a kind of substrate lithographic method for realizing object of the present invention, comprise the following steps:
Substrate etch step, passes into etching gas to reaction chamber, and opens excitation power supply and grid bias power supply, with to the predetermined etching depth of substrate etching;
Plasma treatment step, stops passing into etching gas to reaction chamber, passes into processing gas, and close grid bias power supply to reaction chamber simultaneously, and described processing gas is for removing a part of byproduct of reaction that is deposited in substrate sidewall;
Loop described substrate etch step at least twice, and cycle-index at least one times in the global cycle number of times of described substrate etch step is carried out once described plasma treatment step as interval.
Wherein, described processing gas comprises oxygen, nitrogen or inert gas.
Wherein, in described plasma treatment step, the range of flow of described processing gas is at 100～600sccm.
Wherein, the scope of the exciting power of described excitation power supply is at 100～1000W.
Wherein, the scope of the chamber pressure of described reaction chamber is at 5～45mT.
Wherein, the time of described plasma treatment step is 5～20s.
Preferably, in described substrate etch step, described predetermined etching depth is more than or equal to total etching depth of 1/3rd and is less than or equal to total etching depth of 2/3rds.
Wherein, described etching gas comprises main reaction gas and assisted reaction gas, and wherein said main reaction gas comprises the mist of chlorine, hydrogen bromide or chlorine and hydrogen bromide; Described assisted reaction gas comprises the mist of oxygen and helium, or comprises the mist of oxygen, helium and fluoro-gas.
Wherein, in described substrate etch step, the range of flow of described main reaction gas is at 50～350sccm; The range of flow of the described assisted reaction gas except oxygen is at 50～150sccm; The range of flow of described oxygen is at 5～30sccm; The scope of the exciting power of described excitation power supply is at 600～1200W; The scope of the substrate bias power of described grid bias power supply is at 100～300W; The scope of the chamber pressure of described reaction chamber is at 10～45mT; The scope of etch period is at 10～40s.
Preferably, loop described substrate etch step twice, and described in twice, between substrate etch step, carrying out once described plasma treatment step; And
In the etch step of substrate for the first time in substrate etch step described in twice, described main reaction gas is the mist of chlorine and hydrogen bromide, and described assisted reaction gas is the mist of oxygen and helium; The flow of described chlorine is 250sccm; The flow of described hydrogen bromide is 60sccm; The flow of described oxygen is 15sccm; The flow of described helium is 100sccm; The exciting power of described excitation power supply is 800W; The substrate bias power of described grid bias power supply is 200W; The chamber pressure of described reaction chamber is 15mT; The scope of described etch period is at 18～25s; The scope of described predetermined etching depth exists
In the etch step of substrate for the second time in substrate etch step described in twice, described main reaction gas is the mist of chlorine and hydrogen bromide, and described assisted reaction gas is the mist of oxygen and helium; The flow of described chlorine is 250sccm; The flow of described hydrogen bromide is 60sccm; The flow of described oxygen is 15sccm; The flow of described helium is 100sccm; The exciting power of described excitation power supply is 800W; The substrate bias power of described grid bias power supply is 200W; The chamber pressure of described reaction chamber is 15mT; The scope of described etch period is at 20～25s; Described in completing for the second time after substrate etch step, described total etching depth is
In described plasma treatment step, described processing gas is oxygen, and the flow of described oxygen is 200sccm; The exciting power of described excitation power supply is 500W; The chamber pressure of described reaction chamber is 15mT; Reaction time is 10s.
Preferably, loop described substrate etch step twice, and described in twice, between substrate etch step, carrying out once described plasma treatment step; And
In the etch step of substrate for the first time in substrate etch step described in twice, described main reaction gas is the mist of chlorine and hydrogen bromide, and described assisted reaction gas is the mist of oxygen and helium; The flow of described chlorine is 250sccm; The flow of described hydrogen bromide is 60sccm; The flow of described oxygen is 15sccm; The flow of described helium is 100sccm; The exciting power of described excitation power supply is 800W; The substrate bias power of described grid bias power supply is 200W; The chamber pressure of described reaction chamber is 15mT; The scope of described etch period is at 18～25s; The scope of described predetermined etching depth exists
In the etch step of substrate for the second time in substrate etch step described in twice, described main reaction gas is the mist of chlorine and hydrogen bromide, and described assisted reaction gas is the mist of oxygen and helium; The flow of described chlorine is 250sccm; The flow of described hydrogen bromide is 60sccm; The scope of the flow of described oxygen is at 5～13sccm; The flow of described helium is 100sccm; The exciting power of described excitation power supply is 800W; The substrate bias power of described grid bias power supply is 200W; The scope of the chamber pressure of described reaction chamber is at 5～10mT; The scope of described etch period is at 20～25s; Described in completing for the second time after substrate etch step, described total etching depth is
In described plasma treatment step, described processing gas is oxygen, and the flow of described oxygen is 200sccm; The exciting power of described excitation power supply is 500W; The chamber pressure of described reaction chamber is 15mT; Reaction time is 10s.
The present invention has following beneficial effect:
Substrate lithographic method provided by the invention, it loops substrate etch step at least twice, and after substrate etch step, carry out plasma treatment step one time completing at least one times,, the substrate etching technics that completes total etching depth is divided into the substrate etch step that repeatedly completes desired depth, and intert and carry out plasma treatment step one time after carrying out one or many substrate etch step, this compared with prior art, not only etch step is simple, and without etching apparatus being done to any change, thereby can reduce the manufacturing cost of equipment.
And, owing to having closed grid bias power supply in the process of carrying out plasma treatment step,, substrate bias power is zero, this can in and the Partial charge accumulated on the mask layer sidewall of substrate, thereby the etching direction of the plasma that the electric field action that can avoid appearance to produce because of electric charge causes is departed from towards trenched side-wall by original vertical direction, thereby causes the problem that occurs recessed etch topography on trenched side-wall, and then can improve the slickness of substrate sidewall pattern.In addition, due to carrying out in the process of plasma treatment step, can effectively remove a part of byproduct of reaction of the mask layer sidewall that is deposited in substrate to the processing gas passing in reaction chamber, thereby can prevent to a certain extent that the opening size of substrate groove from diminishing, and then the critical size (as groove width) that can avoid the occurring substrate groove problem of sharply dwindling with the increase of etching depth, thereby can obtain the substrate etch topography with desirable depth-to-width ratio.
Accompanying drawing explanation
Fig. 1 is the electron-microscope scanning figure that adopts the substrate etch topography of existing substrate etching technics acquisition;
Fig. 2 is the groove pattern schematic diagram of existing another kind of substrate lithographic method substrate while carrying out each operation;
Fig. 3 is a kind of FB(flow block) of substrate lithographic method provided by the invention;
Fig. 4 a is the groove pattern schematic diagram of the substrate that obtains after the completing steps S1 of substrate lithographic method provided by the invention;
Fig. 4 b is the groove pattern schematic diagram of the substrate that obtains after the completing steps S2 of substrate lithographic method provided by the invention;
Fig. 4 c is the groove pattern schematic diagram of the substrate that obtains after the completing steps S3 of substrate lithographic method provided by the invention; And
Fig. 5 is the another kind of FB(flow block) of substrate lithographic method provided by the invention.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with accompanying drawing, substrate lithographic method provided by the invention is described in detail.
Fig. 3 is the FB(flow block) of substrate lithographic method provided by the invention.Refer to Fig. 3, the method is that substrate etching technics is divided into substrate etch step twice, that is: the first substrate etch step and the second substrate etch step, and between the two,, after completing the first substrate etch step, and before carrying out the second substrate etch step, carry out plasma treatment step one time.Particularly, comprise the following steps:
Step S1, the first substrate etch step.In step S1, pass into etching gas to reaction chamber, and open excitation power supply and grid bias power supply, with to the predetermined etching depth of substrate etching.Etching gas comprises main reaction gas and assisted reaction gas, and wherein, main reaction gas refers to the gas that gas flow is relatively large, and it can comprise chlorine, hydrogen bromide or both mists; Assisted reaction gas refers to the gas that gas flow is relatively little, and it can comprise the mist of oxygen and helium, or comprises oxygen, helium and the mist such as the fluoro-gas of sulfur fluoride, nitrogen fluoride etc.
In actual applications, the range of flow of main reaction gas is at 50～350sccm; The range of flow of the assisted reaction gas except oxygen is at 50～150sccm; The range of flow of oxygen is at 5～30sccm; The scope of the exciting power of excitation power supply is at 600～1200W; The scope of the substrate bias power of grid bias power supply is at 100～300W; The scope of the chamber pressure of reaction chamber is at 10～45mT; The scope of etch period is at 10～40s.Preferably, main reaction gas is the mist of chlorine and hydrogen bromide, and assisted reaction gas is the mist of oxygen and helium; And the flow of chlorine is 250sccm; The flow of hydrogen bromide is 60sccm; The flow of oxygen is 15sccm; The flow of helium is 100sccm; The exciting power of excitation power supply is 800W; The substrate bias power of grid bias power supply is 200W; The chamber pressure of reaction chamber is 15mT; The scope of etch period is at 18～25s; The scope of predetermined etching depth exists
After completing steps S1, as shown in Fig. 4 a, on the sidewall of the mask layer 21 of substrate 20, pile up the byproduct of reaction 22 that responds and generate, and the groove of substrate 20 reaches predetermined etching depth, this predetermined etching depth accounts for the ratio free setting as the case may be of total etching depth, preferably, predetermined etching depth is more than or equal to total etching depth of 1/3rd and is less than or equal to total etching depth of 2/3rds, too much with the byproduct of reaction that prevents from causing because the reaction time is long piling up on the mask layer sidewall of substrate.
Step S2, plasma treatment step.Stop passing into etching gas to reaction chamber, pass into processing gas to reaction chamber, and close grid bias power supply (, substrate bias power is zero) simultaneously.In step S2, process gas for removing a part of byproduct of reaction of the mask layer sidewall that is deposited in substrate, it can comprise oxygen, nitrogen or such as the inert gas such as helium, argon gas.In actual applications, the range of flow of processing gas is at 100～600sccm; The scope of the exciting power of excitation power supply is at 100～1000W; The scope of the chamber pressure of reaction chamber is at 5～45mT; The scope in the reaction time of plasma treatment step is at 5～20s.
Preferably, processing gas is oxygen.In the present embodiment, the flow of oxygen is 200sccm; The exciting power of excitation power supply is 500W; The chamber pressure of reaction chamber is 15mT; Reaction time is 10s.After completing steps S2, as shown in Figure 4 b, the oxygen passing into can form passivation layer 23 on the inner surface of the groove of substrate 20, and for example, oxygen can be with silicon chip generation oxidation reaction forms silica passivation layer at the inner surface of the groove of silicon chip.Carrying out in the process of follow-up substrate etch step; passivation layer 23 can form layer protective layer at the trenched side-wall of substrate with the byproduct of reaction 22 that is deposited in mask layer 21 sidewalls; this protective layer can effectively stop the trenched side-wall direction etching of plasma towards substrate 20; and only towards the channel bottom direction etching of substrate 20; thereby can avoid occurring recessed etch topography on the trenched side-wall of substrate 20, and then can improve the slickness of substrate sidewall pattern.In addition, the thickness of passivation layer 23 can be set by the parameter such as exciting power and gas flow of the chamber pressure of adjusting reaction time, reaction chamber, excitation power supply.
In addition, be deposited in a part of byproduct of reaction of the mask layer sidewall of substrate by processing gas clean-up, can prevent to a certain extent that the opening size of substrate groove from diminishing, thereby the problem that the critical size (as groove width) that can avoid occurring substrate groove sharply dwindles with the increase of etching depth, and then can obtain the substrate etch topography with desirable depth-to-width ratio.And, owing to having closed grid bias power supply,, substrate bias power is zero, the effect of the electric charge of accumulating during this can play and on mask layer sidewall, thereby the etching direction of the plasma that the electric field action that can avoid appearance to produce because of electric charge causes is departed from towards the trenched side-wall of substrate by original vertical direction, thereby causes the problem that occurs recessed etch topography on trenched side-wall, and then can improve the slickness of substrate sidewall pattern.
Step S3, the second substrate etch step.In step S3, stop passing into processing gas to reaction chamber, pass into etching gas to reaction chamber, and open grid bias power supply, so that substrate is carried out to etching, until complete total etching depth simultaneously.Specific works process and the step S1 of step S3 are similar, do not repeat them here.As shown in Fig. 4 c, after completing steps S3, passivation layer 23 is consumed gradually with the increase of etching depth, be eliminated even completely, and the thickness that is deposited in the byproduct of reaction 22 on mask layer 21 sidewalls also reduces gradually, and residual byproduct of reaction can be removed in follow-up matting, thereby not only can obtain the substrate etch topography with desirable depth-to-width ratio, and can improve the slickness of substrate trenched side-wall pattern.
In actual applications, the parameter that this step adopts can be identical with the parameter that the first substrate etch step adopts, or, also can regulate the parameter of chamber pressure of the flow of oxygen and reaction chamber etc., for example, can make the flow of the oxygen of the second etch step reduce by 2～10sccm with respect to the flow of the oxygen of the first etch step, for example, in the time that the flow of the oxygen of the first substrate etch step is 15sccm, the range of flow of the oxygen of the second etch step can be at 5～13sccm; And/or, make the chamber pressure of the second etch step with respect to the chamber pressure decline 5～10mT of the first etch step, for example, in the time that the chamber pressure of the first etch step is 15mT, the chamber pressure scope of the second etch step can be at 5～10mT.In addition,, after completing for the second time substrate etch step, preferably, total etching depth can be
It should be noted that, in the present embodiment, processing gas is oxygen, but the present invention is not limited thereto, and in actual applications, nitrogen or helium also can be in the process of carrying out plasma treatment step form passivation layer on the inner surface of the groove of substrate 20.
Also it should be noted that, in the present embodiment, substrate lithographic method is that substrate etching technics is divided into substrate etch step twice, that is: the first substrate etch step and the second substrate etch step, and between the two, carry out plasma treatment step one time.But the present invention is not limited thereto, in actual applications, can as the case may be substrate etching technics be divided into three times or three above substrate etch step, , loop substrate etch step at least twice, and each substrate etch step completes predetermined etching depth, and complete total etching depth after completing all substrate etch step, and, cycle-index at least one times in the global cycle number of times of substrate etch step is carried out plasma treatment step one time as interval, in other words, can in the process that loops repeatedly substrate etch step, intert and carry out one or many plasma treatment step.
For example, as shown in Figure 5, the substrate lithographic method that the present embodiment provides can also be divided into substrate etching technics four times substrate etch step, that is: the first substrate etch step to the four substrate etch step, and between the second substrate etch step and the 3rd substrate etch step, and the 3rd between substrate etch step and the 4th substrate etch step, carry out plasma treatment step one time.Particularly, comprise the following steps:
Step S10, the first substrate etch step.
Step S20, the second substrate etch step.
Step S30, plasma treatment step.
Step S40, the 3rd substrate etch step.
Step S50, plasma treatment step.
Step S60, the 4th substrate etch step.
Wherein, specific works process and the aforesaid step S1 of above-mentioned steps S10, step S20, step S40 and step S60 are similar, specific works process and the aforesaid step S2 of above-mentioned steps S30 and step S50 are similar, because step S1 and step S2 have had and described in detail in the preceding article, do not repeat them here.Easily understand, after completing steps S60, complete total etching depth, in other words, the predetermined etching depth sum that four substrate etch step complete equals total etching depth, and predetermined etching depth free setting as the case may be in each substrate etch step.
In sum, the above-mentioned substrate lithographic method that the present embodiment provides, it loops substrate etch step at least twice, and after substrate etch step, carry out plasma treatment step one time completing at least one times, , the substrate etching technics that completes total etching depth is divided into the substrate etch step that repeatedly completes desired depth, and intert and carry out plasma treatment step one time after carrying out one or many substrate etch step, this compared with prior art, not only etch step is simple, and without etching apparatus being done to any change, thereby can reduce the manufacturing cost of equipment.
And, owing to having closed grid bias power supply in the process of carrying out plasma treatment step,, substrate bias power is zero, this can in and the Partial charge accumulated on the mask layer sidewall of substrate, thereby the etching direction of the plasma that the electric field action that can avoid appearance to produce because of electric charge causes is departed from towards trenched side-wall by original vertical direction, thereby causes the problem that occurs recessed etch topography on trenched side-wall, and then can improve the slickness of substrate sidewall pattern.In addition, due to carrying out in the process of plasma treatment step, can effectively remove a part of byproduct of reaction of the mask layer sidewall that is deposited in substrate to the processing gas passing in reaction chamber, thereby can prevent to a certain extent that the opening size of substrate groove from diminishing, and then the critical size (as groove width) that can avoid the occurring substrate groove problem of sharply dwindling with the increase of etching depth, thereby can obtain the substrate etch topography with desirable depth-to-width ratio.
Be understandable that, above execution mode is only used to principle of the present invention is described and the illustrative embodiments that adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (11)
1. a substrate lithographic method, is characterized in that, comprises the following steps:
Substrate etch step, passes into etching gas to reaction chamber, and opens excitation power supply and grid bias power supply, with to the predetermined etching depth of substrate etching;
Plasma treatment step, stops passing into etching gas to reaction chamber, passes into processing gas, and close grid bias power supply to reaction chamber simultaneously, and described processing gas is for removing a part of byproduct of reaction that is deposited in substrate sidewall;
Loop described substrate etch step at least twice, and cycle-index at least one times in the global cycle number of times of described substrate etch step is carried out once described plasma treatment step as interval.
2. substrate lithographic method as claimed in claim 1, is characterized in that, described processing gas comprises oxygen, nitrogen or inert gas.
3. substrate lithographic method as claimed in claim 1, is characterized in that, in described plasma treatment step, the range of flow of described processing gas is at 100～600sccm.
4. substrate lithographic method as claimed in claim 1, is characterized in that, the scope of the exciting power of described excitation power supply is at 100～1000W.
5. substrate lithographic method as claimed in claim 1, is characterized in that, the scope of the chamber pressure of described reaction chamber is at 5～45mT.
6. substrate lithographic method as claimed in claim 1, is characterized in that, the time of described plasma treatment step is 5～20s.
7. the substrate lithographic method as described in claim 1-6 any one claim, is characterized in that, in described substrate etch step, described predetermined etching depth is more than or equal to total etching depth of 1/3rd and is less than or equal to total etching depth of 2/3rds.
8. the substrate lithographic method as described in claim 1-6 any one claim, is characterized in that, described etching gas comprises main reaction gas and assisted reaction gas, wherein
Described main reaction gas comprises the mist of chlorine, hydrogen bromide or chlorine and hydrogen bromide;
Described assisted reaction gas comprises the mist of oxygen and helium, or comprises the mist of oxygen, helium and fluoro-gas.
9. substrate lithographic method as claimed in claim 8, is characterized in that, in described substrate etch step, the range of flow of described main reaction gas is at 50～350sccm; The range of flow of the described assisted reaction gas except oxygen is at 50～150sccm; The range of flow of described oxygen is at 5～30sccm;
The scope of the exciting power of described excitation power supply is at 600～1200W; The scope of the substrate bias power of described grid bias power supply is at 100～300W; The scope of the chamber pressure of described reaction chamber is at 10～45mT; The scope of etch period is at 10～40s.
10. substrate lithographic method as claimed in claim 9, is characterized in that, loops described substrate etch step twice, and described in twice, between substrate etch step, is carrying out once described plasma treatment step; And
In the etch step of substrate for the first time in substrate etch step described in twice, described main reaction gas is the mist of chlorine and hydrogen bromide, and described assisted reaction gas is the mist of oxygen and helium; The flow of described chlorine is 250sccm; The flow of described hydrogen bromide is 60sccm; The flow of described oxygen is 15sccm; The flow of described helium is 100sccm; The exciting power of described excitation power supply is 800W; The substrate bias power of described grid bias power supply is 200W; The chamber pressure of described reaction chamber is 15mT; The scope of described etch period is at 18～25s; The scope of described predetermined etching depth exists
In the etch step of substrate for the second time in substrate etch step described in twice, described main reaction gas is the mist of chlorine and hydrogen bromide, and described assisted reaction gas is the mist of oxygen and helium; The flow of described chlorine is 250sccm; The flow of described hydrogen bromide is 60sccm; The flow of described oxygen is 15sccm; The flow of described helium is 100sccm; The exciting power of described excitation power supply is 800W; The substrate bias power of described grid bias power supply is 200W; The chamber pressure of described reaction chamber is 15mT; The scope of described etch period is at 20～25s; Described in completing for the second time after substrate etch step, described total etching depth is
In described plasma treatment step, described processing gas is oxygen, and the flow of described oxygen is 200sccm; The exciting power of described excitation power supply is 500W; The chamber pressure of described reaction chamber is 15mT; Reaction time is 10s.
11. substrate lithographic methods as claimed in claim 9, is characterized in that, loop described substrate etch step twice, and described in twice, between substrate etch step, are carrying out once described plasma treatment step; And
In the etch step of substrate for the first time in substrate etch step described in twice, described main reaction gas is the mist of chlorine and hydrogen bromide, and described assisted reaction gas is the mist of oxygen and helium; The flow of described chlorine is 250sccm; The flow of described hydrogen bromide is 60sccm; The flow of described oxygen is 15sccm; The flow of described helium is 100sccm; The exciting power of described excitation power supply is 800W; The substrate bias power of described grid bias power supply is 200W; The chamber pressure of described reaction chamber is 15mT; The scope of described etch period is at 18～25s; The scope of described predetermined etching depth exists
In the etch step of substrate for the second time in substrate etch step described in twice, described main reaction gas is the mist of chlorine and hydrogen bromide, and described assisted reaction gas is the mist of oxygen and helium; The flow of described chlorine is 250sccm; The flow of described hydrogen bromide is 60sccm; The scope of the flow of described oxygen is at 5～13sccm; The flow of described helium is 100sccm; The exciting power of described excitation power supply is 800W; The substrate bias power of described grid bias power supply is 200W; The scope of the chamber pressure of described reaction chamber is at 5～10mT; The scope of described etch period is at 20～25s; Described in completing for the second time after substrate etch step, described total etching depth is
In described plasma treatment step, described processing gas is oxygen, and the flow of described oxygen is 200sccm; The exciting power of described excitation power supply is 500W; The chamber pressure of described reaction chamber is 15mT; Reaction time is 10s.
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| CN201310007774.2A CN103915330B (en) | 2013-01-09 | 2013-01-09 | Substrate etching method |
| TW102143434A TWI515790B (en) | 2013-01-09 | 2013-11-28 | Wafer etching method |
| PCT/CN2013/088513 WO2014108001A1 (en) | 2013-01-09 | 2013-12-04 | Substrate etching method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201428849A (en) | 2014-07-16 |
| TWI515790B (en) | 2016-01-01 |
| WO2014108001A1 (en) | 2014-07-17 |
| CN103915330B (en) | 2017-02-08 |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |