CN106847689B - Deep silicon etching process - Google Patents
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- CN106847689B CN106847689B CN201510883820.4A CN201510883820A CN106847689B CN 106847689 B CN106847689 B CN 106847689B CN 201510883820 A CN201510883820 A CN 201510883820A CN 106847689 B CN106847689 B CN 106847689B
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- 238000005530 etching Methods 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims abstract description 116
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 42
- 239000010703 silicon Substances 0.000 title claims abstract description 42
- 239000007789 gas Substances 0.000 claims abstract description 33
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims abstract description 11
- 229920000642 polymer Polymers 0.000 claims abstract description 8
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims abstract description 6
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims description 22
- 230000005284 excitation Effects 0.000 claims description 19
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 230000000694 effects Effects 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000009623 Bosch process Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a deep silicon etching process, which comprises the following steps: s1, a pre-etching step, wherein etching gas, hydrogen bromide and oxygen are introduced to etch to a preset depth so as to form polymers containing oxygen, bromine and silicon on the side wall of the etching groove; and S2, etching until the etching depth meets the requirement. The deep silicon etching process provided by the invention solves the problem of forming the Bowing morphology on the side wall of the etched groove, and ensures the smoothness of the side wall of the etched groove.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and relates to a deep silicon etching process.
Background
Thanks to the breakthrough and rapid development of High Aspect Ratio anisotropic etching technology (High Aspect Ratio silicon etch), more and more MEMS devices are developing towards deep silicon structures, and deep silicon etching technology has become a prerequisite for realizing advanced MEMS devices. The dry plasma deep silicon etch process is becoming one of the hottest processes. Compared with the common etching process, the deep silicon etching process has the following characteristics: 1, etching depth is generally dozens of microns or even hundreds of microns, and the etching depth of a general silicon etching process is required to be less than 1 micron; 2, has higher etching rate and selectivity ratio.
Currently, the mainstream deep silicon etch process is the Bosch process, which is performed by alternating cycles of etch steps and deposition steps until the desired etch depth is achieved. Typical process recipes include: first, the process parameters of the deposition step, including a process Pressure (Pressure) of 50mT, a pumping power (SRF) of 1200W, a bias power (BRF) of 0W, and a deposition gas C
4F
8The gas flow is 200sccm, the process temperature is 20 ℃, and the process time is 2 s; secondly, the process Pressure (Pressure) of the etching step is 50mT, the excitation power (SRF) is 1500W, and the bias power (BRF) is 50W; the etching gas is SF
6The gas flow is 200sccm, the process temperature is 20 ℃, and the process time is 3 s.
In practical application, the following are found: etching the top opening of the trench in a deep silicon etch process results in a Bowing profile, as shown in fig. 1, which is increasingly pronounced as process time increases.
Therefore, a deep silicon etching process for solving or improving the Bowing profile is needed to make the sidewall of the etched trench smooth.
Disclosure of Invention
In order to solve the technical problem, the invention provides a deep silicon etching process, which solves the problem of forming a Bowing shape on the side wall of an etched groove and ensures the side wall of the etched groove to be smooth.
In order to solve the technical problems provided by the invention, the invention provides a deep silicon etching process, which comprises the following steps: s1, a pre-etching step, wherein etching gas, hydrogen bromide and oxygen are introduced to etch to a preset depth so as to form polymers containing oxygen, bromine and silicon on the side wall of the etching groove; and S2, etching until the etching depth meets the requirement.
Specifically, the etching step includes: a deposition sub-step; an etching substep; and repeatedly executing the deposition substep and the etching substep until the etching depth meets the requirement.
Specifically, the process parameters of the pre-etching step include: the process pressure is in a range of 30-50 mT, the excitation power is in a range of 1000-2000W, and the bias power is in a range of 50-100W; the process temperature is in the range of 10-20 ℃.
Specifically, the process parameters of the pre-etching step further include: the process time is 240-360 s.
Specifically, the pre-etching step further includes: helium was introduced.
Specifically, the process parameters of the deposition substep include: the process pressure is in a range of 30-50 mT, the excitation power is in a range of 1000-2000W, and the bias power is 0W; the value range of the process temperature is 10-20 ℃; the process time is in a range of 2-3 s.
Specifically, the process parameters of the etching substep include: the process pressure is in a range of 30-50 mT, the excitation power is in a range of 1000-2000W, and the bias power is in a range of 50-100W; the value range of the process temperature is 10-20 ℃; the process time is in a range of 2-3 s.
Specifically, the process parameters of the pre-etching step include: the process pressure is 30mT, the excitation power is 1000W, and the bias power is 50W; the etching gas is SF
6The gas flow is 100 sccm; the hydrogen bromideThe gas flow of (2) is 30 sccm; the flow rate of the oxygen is 50 sccm; the flow rate of the helium gas is 50 sccm; the process temperature is 20 ℃; the process time was 240 s.
Specifically, the process parameters of the deposition substep include: the process pressure is 50mT, the excitation power is 1500W, and the bias power is 0W; the process temperature is 20 ℃; the process time is 2 s; the deposition gas is C
4F
8The gas flow rate was 200 sccm.
Specifically, the process parameters of the etching substep include: the process pressure is 50mT, the excitation power is 2000W, and the bias power is 50W; the process temperature is 20 ℃; the process time is 3 s; the etching gas is SF
6The gas flow rate was 200 sccm.
The invention has the following beneficial effects:
according to the deep silicon etching process provided by the invention, firstly, hydrogen bromide with high anisotropy is adopted in the pre-etching step, and the hydrogen bromide is not easy to be transversely etched in the top area of an etching groove like etching gas in the prior art, so that the Bowing appearance is not easy to generate; secondly, in the pre-etching step, a polymer containing oxygen, bromine and silicon can be formed on the side wall area of the etching groove where the Bowing morphology is easily formed by means of the reaction of hydrogen bromide, oxygen and a silicon wafer, and the polymer can protect the side wall area, so that the occurrence of the Bowing morphology can be avoided, the problem of the Bowing morphology in the prior art is solved in two aspects, the effect of smoothing the side wall of the etching groove is realized, and a foundation is laid for the aim of continuously improving the aspect ratio.
Drawings
FIG. 1 is an electron microscope scanning image of Bowing morphology;
FIG. 2 is a flow chart of a deep silicon etch process provided by an embodiment of the present invention;
FIG. 3a is a scanning electron microscope image of the etched trench after the pre-etching step in FIG. 2 is completed;
FIG. 3b is an enlarged partial view of the top of the etched trench shown in FIG. 3 a;
FIG. 4a is an electron microscope scanning image of the etched trench after the deep silicon etching process is finished; and
fig. 4b is a partial enlarged view of the top of the etched trench shown in fig. 4 a.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the deep silicon etching process provided by the present invention is described in detail below with reference to the accompanying drawings.
Fig. 2 is a flowchart of a deep silicon etching process according to an embodiment of the present invention. Referring to fig. 2, a deep silicon etching process provided by the embodiment of the invention includes:
s1, pre-etching step, introducing etching gas, hydrogen bromide (HBr) and oxygen (O)
2) Etching is carried out to a preset depth so as to etch the polymer containing oxygen, bromine and silicon on the side wall of the groove.
Specifically, the preset depth is specifically set according to the height of the actual Bowing shape, and generally the preset depth is more than or equal to the height of the actual Bowing shape, so as to thoroughly avoid the generation of the Bowing shape; if the actual Bowing profile is usually present at a depth of 0-5 μm, the predetermined depth is set to 5 μm, but may be larger than 5 μm.
And S2, etching until the etching depth meets the requirement.
In this embodiment, specifically, the etching step S2 includes:
s21, a deposition sub-step;
s22, etching substep;
and repeatedly executing the deposition substep and the etching substep until the etching depth meets the requirement.
It is noted that, although the deposition sub-step is performed first and then the etching sub-step is performed in the present embodiment, the present invention is not limited to this, and in practical applications, the etching sub-step may be performed first and then the deposition sub-step may be performed.
According to the deep silicon etching process provided by the embodiment of the invention, firstly, hydrogen bromide with high anisotropy is adopted in the pre-etching step, and the hydrogen bromide is not easy to be transversely etched in the top area of the etching groove like etching gas in the prior art, so that the Bowing appearance is not easy to generate; secondly, in the pre-etching step, a polymer containing oxygen, bromine and silicon can be formed on the side wall area of the etching groove where the Bowing morphology is easily formed by means of the reaction of hydrogen bromide, oxygen and a silicon wafer, and the polymer can protect the side wall area, so that the occurrence of the Bowing morphology can be avoided, the problem of the Bowing morphology in the prior art is solved, the effect of smoothing the side wall of the etching groove is realized, and a foundation is laid for the aim of continuously improving the aspect ratio.
Preferably, the pre-etching step further includes: and introducing helium (He) which is used as a good heat-conducting gas, so that the etching uniformity of the step can be ensured.
Further preferably, the process parameters of the pre-etching step include: the process pressure is in a range of 30-50 mT, the excitation power is in a range of 1000-2000W, and the bias power is in a range of 50-100W; the process temperature is in the range of 10-20 ℃.
Further preferably, the process parameters of the pre-etching step further include: the process time is 240-360 s.
Still further preferably, the process parameters of the deposition sub-step include: the process pressure is in a range of 30-50 mT, the excitation power is in a range of 1000-2000W, and the bias power is 0W; the value range of the process temperature is 10-20 ℃; the process time is in a range of 2-3 s.
The process parameters of the etching sub-step comprise: the process pressure is in a range of 30-50 mT, the excitation power is in a range of 1000-2000W, and the bias power is in a range of 50-100W; the value range of the process temperature is 10-20 ℃; the process time is in a range of 2-3 s.
The deep silicon etching process provided by the invention is verified through experiments. Specifically, the process parameters of the pre-etching step include: the process pressure is 30mT, the excitation power is 1000W, and the bias power is 50W; the etching gas is SF
6The gas flow is 100 sccm; the flow rate of the hydrogen bromide is 30 sccm; the flow rate of oxygen is 50 sccm; the flow rate of helium gas was 50 sccm; the process temperature is 20 ℃; the process time was 240 s.
After the pre-etching step is performed, the profile of the etched trench is shown in fig. 3a, and fig. 3b is a partial enlarged view of the top of the etched trench shown in fig. 3a, as can be seen: the Bowing morphology is not formed on the side wall of the etched groove, and the etching depth is about 5 mu m.
In the etching step: the process parameters of the deposition substep include: the process pressure is 50mT, the excitation power is 1500W, and the bias power is 0W; the process temperature is 20 ℃; the process time is 2 s; the deposition gas is C
4F
8The gas flow rate was 200 sccm.
The process parameters of the etching sub-step comprise: the process pressure is 50mT, the excitation power is 2000W, and the bias power is 50W; the process temperature is 20 ℃; the process time is 3 s; the etching gas is SF
6The gas flow rate was 200 sccm.
And, the number of times of performing the deposition sub-step and the etching sub-step cyclically is 200.
On the silicon wafer shown in fig. 3a, the etching step is continued, and after the etching step is completed, the topography of the etched groove is as shown in fig. 4a, the total etching depth is about 80 μm, wherein the etching depth of the etching step is about 75 μm, and fig. 4b is a partial enlarged view of the top of the etched groove shown in fig. 4a, as can be directly seen from fig. 4 b: the top region of the etched trench sidewalls did not exhibit Bowing topography.
In conclusion, experiments prove that the deep silicon etching process provided by the embodiment of the invention can solve the problem of Bowing morphology in the prior art, and realize the effect of smoothing the side wall of the etched groove, thereby laying a foundation for the aim of continuously improving the aspect ratio.
It should be noted that, in the present embodiment, although the etching step includes a deposition sub-step and an etching sub-step which are repeatedly performed; however, the present invention is not limited thereto, and in practical applications, it is within the scope of the present invention to add the pre-etching step of the present invention before any etching step for implementing deep silicon etching.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (8)
1. A deep silicon etching process, comprising:
s1, a pre-etching step, wherein etching gas, hydrogen bromide and oxygen are introduced to etch to a preset depth so as to form polymers containing oxygen, bromine and silicon on the side wall of the etching groove; the preset depth is greater than or equal to the height of the Bowing appearance; the process parameters of the pre-etching step comprise: the value range of the process time is 240-360 s;
s2, etching until the etching depth meets the requirement; the etching step comprises:
a deposition sub-step;
an etching substep;
and repeatedly executing the deposition substep and the etching substep until the etching depth meets the requirement.
2. The deep silicon etching process according to claim 1, wherein the process parameters of the pre-etching step further include: the process pressure is in a range of 30-50 mT, the excitation power is in a range of 1000-2000W, and the bias power is in a range of 50-100W; the process temperature is in the range of 10-20 ℃.
3. The deep silicon etching process according to claim 1, wherein the pre-etching step further comprises: helium was introduced.
4. The deep silicon etch process of claim 1, wherein the process parameters of the deposition substep include: the process pressure is in a range of 30-50 mT, the excitation power is in a range of 1000-2000W, and the bias power is 0W; the value range of the process temperature is 10-20 ℃; the process time is in a range of 2-3 s.
5. The deep silicon etching process according to claim 1, wherein the process parameters of the etching sub-step include: the process pressure is in a range of 30-50 mT, the excitation power is in a range of 1000-2000W, and the bias power is in a range of 50-100W; the value range of the process temperature is 10-20 ℃; the process time is in a range of 2-3 s.
6. The deep silicon etching process according to claim 3, wherein the process parameters of the pre-etching step include: the process pressure is 30mT, the excitation power is 1000W, and the bias power is 50W; the etching gas is SF
6The gas flow is 100 sccm; the flow rate of the hydrogen bromide is 30 sccm; the flow rate of the oxygen is 50 sccm; the flow rate of the helium gas is 50 sccm; the process temperature is 20 ℃; the process time was 240 s.
7. The deep silicon etch process of claim 1, wherein the process parameters of the deposition substep include: the process pressure is 50mT, the excitation power is 1500W, and the bias power is 0W; the process temperature is 20 ℃; the process time is 2 s; the deposition gas is C
4F
8The gas flow rate was 200 sccm.
8. The deep silicon etching process according to claim 1, wherein the process parameters of the etching sub-step include: the process pressure is 50mT, the excitation power is 2000W, and the bias power is 50W; the process temperature is 20 ℃; the process time is 3 s; the etching gas is SF
6The gas flow rate was 200 sccm.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103915330A (en) * | 2013-01-09 | 2014-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
| CN104671193A (en) * | 2013-12-03 | 2015-06-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching method |
| CN104952788A (en) * | 2014-03-27 | 2015-09-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for etching inclined hole |
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| US9711365B2 (en) * | 2014-05-02 | 2017-07-18 | International Business Machines Corporation | Etch rate enhancement for a silicon etch process through etch chamber pretreatment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103915330A (en) * | 2013-01-09 | 2014-07-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate etching method |
| CN104671193A (en) * | 2013-12-03 | 2015-06-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deep silicon etching method |
| CN104952788A (en) * | 2014-03-27 | 2015-09-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for etching inclined hole |
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