CN104752197B - Substrate lithographic method - Google Patents
Substrate lithographic method Download PDFInfo
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- CN104752197B CN104752197B CN201310737668.XA CN201310737668A CN104752197B CN 104752197 B CN104752197 B CN 104752197B CN 201310737668 A CN201310737668 A CN 201310737668A CN 104752197 B CN104752197 B CN 104752197B
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- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000007789 gas Substances 0.000 claims abstract description 83
- 238000005530 etching Methods 0.000 claims abstract description 54
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 16
- 230000005284 excitation Effects 0.000 claims abstract description 12
- 239000011261 inert gas Substances 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000005864 Sulphur Substances 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 6
- 239000011737 fluorine Substances 0.000 claims abstract description 6
- 239000001307 helium Substances 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 7
- -1 fluorine sulphur compound Chemical class 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of substrate lithographic method, and it comprises the following steps：S1, is passed through etching gas, passivation gas and auxiliary gas, and open excitation power supply and grid bias power supply to reaction chamber；Also, by improving chamber pressure, increasing the flow of passivation gas, reduce the flow of etching gas and reduce the substrate bias power of grid bias power supply, and reduce the open-topped angle of inclination of groove；S2, after by the default process time, by reducing the flow of chamber pressure, increase etching gas and passivation gas, and increases the angle of inclination of in the middle part of the side wall of groove and bottom；Wherein, etching gas include the chemical compound gas of fluorine and sulphur；Passivation gas includes oxygen；Gas is aided in include inert gas.The substrate lithographic method that the present invention is provided, the preferable substrate pattern that it is in V-shape, side wall middle part that its open top that can obtain groove, which is tilted, and bottom is steep and lower surface is smooth.
Description
Technical field
The present invention relates to microelectronics technology, more particularly to a kind of substrate lithographic method.
Background technology
In recent years, as MEMS and system are applied to automobile and consumer electronics field more and more widely, and
TSV（Through Silicon Etch, via etch）In the bright prospects of following encapsulation field, deep silicon etching technique gradually into
For one of technique most very powerful and exceedingly arrogant in MEMS manufacture fields and TSV technology.Moreover, for different applications, to deep silicon etching
The requirement for the substrate pattern that technique is obtained is also different, for example, in encapsulation field, usually requiring that the groove of acquisition has and tilting
Side wall, to meet other follow-up process requirements, while the performance and stably in order to ensure device, it is desirable to opened at the top of groove
Mouth is tilted in V-shape, side wall middle part and bottom is steep and lower surface is smooth, as shown in Figure 1.
A kind of existing substrate lithographic method, its method for using single step to etch performs etching technique to substrate, i.e. continuous
Etching substrate is until reach total etching depth needed for technique.During substrate is etched, this method is also different by setting
Substrate bias power adjust the angle of inclination of side wall（Angle between trenched side-wall and trench bottom surfaces）.Specifically, substrate bias power
Higher, then the angle of inclination of side wall is bigger；Conversely, substrate bias power is lower, then the angle of inclination of side wall is smaller.Typical technique ginseng
Number is：Etching gas are SF6And O2Mixed gas, wherein, SF6Flow be 105sccm, O2Flow be 68sccm；Reaction
The chamber pressure of chamber is 33mT；Exciting power is 500W；Substrate bias power is 100W；Process time is 600s.
Fig. 2 is the scanning electron microscope (SEM) photograph of the substrate via existing substrate lithographic method and using the acquisition of above-mentioned technological parameter.
As shown in Fig. 2 the open-topped angle of inclination of groove is excessive, and with the increase of process time, the crucial chi of sidewall bottom
Very little to shrink serious, this can cause etching to be interrupted.So as to cause technique not to be normally carried out.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that a kind of substrate etching side
Method, the ideal that it is in V-shape, side wall middle part that its open top that can obtain groove, which is tilted, and bottom is steep and lower surface is smooth
Substrate pattern.
To realize that the purpose of the present invention provides a kind of substrate lithographic method, comprise the following steps：
S1, is passed through etching gas, passivation gas and auxiliary gas, and open excitation power supply and bias plasma to reaction chamber
Source；Also, by improving chamber pressure, the flow of the increase passivation gas, the flow and drop for reducing the etching gas
The substrate bias power of the low grid bias power supply, and reduce the open-topped angle of inclination of groove；
S2, after by the default process time, by reducing chamber pressure, increasing the etching gas and passivating gas
The flow of body, and increase the angle of inclination of in the middle part of the side wall of groove and bottom；
Wherein, the etching gas include the chemical compound gas of fluorine and sulphur；The passivation gas includes oxygen；The auxiliary
Gas includes inert gas.
It is preferred that, in step sl, the span of the chamber pressure is in 30~60mT.
It is preferred that, in step sl, the span of the chamber pressure is in 40~50mT.
It is preferred that, in step sl, the span of the flow of the passivation gas is in 20~60sccm.
It is preferred that, in step sl, the span of the flow of the passivation gas is in 30~50sccm.
It is preferred that, in step sl, the span of the flow of the inert gas is in 40~80sccm.
It is preferred that, in step sl, the span of the substrate bias power is in 20~40W
It is preferred that, in step s 2, the span of the chamber pressure is in 15~40mT.
It is preferred that, in step s 2, the span of the chamber pressure is in 20~30mT.
It is preferred that, in step s 2, the span of the flow of the passivation gas is in 20~60sccm.
It is preferred that, in step s 2, the span of the flow of the inert gas is in 40~80sccm.
It is preferred that, in step s 2, the span of the substrate bias power is in 20~80W.
It is preferred that, in step S1 and S2, the span of the exciting power of the excitation power supply is in 400~900W.
It is preferred that, in step S1 and S2, the span of the exciting power of the excitation power supply is in 500~600W.
It is preferred that, the chemical compound gas of the fluorine and sulphur includes Nitrogen trifluoride, fluorine sulphur compound or the gaseous mixture of the two
Body.
It is preferred that, the inert gas includes helium.
The invention has the advantages that：
The substrate lithographic method that the present invention is provided, it is divided into two steps, in a first step, raising chamber pressure,
Increase the substrate bias power of the flow, the flow of reduction etching gas and reduction grid bias power supply of passivation gas, due to higher chamber
Chamber pressure can increase the ionization level of gas, while increasing isotropic etching, this may advantageously facilitate plasma etching groove
Open top, so as to reduce the open-topped angle of inclination of groove；In addition, the flow of larger passivation gas and compared with
The flow rates of small etching gas are in protection trenched side-wall, so that increase of the width of channel bottom with etching depth
And gradually taper up, i.e. it is gradually reduced the open-topped angle of inclination of groove.In second step, by reducing chamber
The flow of pressure, increase etching gas and passivation gas, can increase anisotropic etching, so as to be conducive to etching side wall steep
Straight pattern, i.e. the angle of inclination of in the middle part of the side wall of increase groove and bottom, it is hereby achieved that the angle of inclination of side wall is vertical
Substrate pattern；Meanwhile, by increasing the flow of etching gas and passivation gas, it can avoid because with the increasing of process time
Plus, the critical size of sidewall bottom occurs shrinking and the phenomenon that etching is interrupted occurs, so as to ensure the base of sidewall
On plinth, groove is set smoothly to reach default total etching depth.
In addition, in above-mentioned two step, using relatively low substrate bias power, because higher substrate bias power can be because
The energy of plasma is excessive and damages flute surfaces, but also the open top of groove can be made steep, so as to can not be inclined
The less V-shape opening of rake angle.
Brief description of the drawings
Fig. 1 is the schematic diagram of preferable substrate pattern；
Fig. 2 is the scanning electron microscope (SEM) photograph of the substrate pattern obtained using existing substrate lithographic method；
The FB(flow block) for the substrate lithographic method that Fig. 3 provides for the present invention；
Fig. 4 is the scanning electron microscope (SEM) photograph of the cambered substrate pattern of side cornice；
Fig. 5 A are the scanning electron microscope (SEM) photograph of the substrate pattern obtained using the lithographic method of the invention provided；And
Fig. 5 B are the ESEM enlarged drawing of the substrate pattern obtained using the lithographic method of the invention provided.
Embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The substrate lithographic method of offer is described in detail.
The FB(flow block) for the substrate lithographic method that Fig. 3 provides for the present invention.Referring to Fig. 1, this method comprises the following steps：
S1, etching gas, passivation gas are passed through to reaction chamber（Also known as protective gas）With auxiliary gas, and excitation is opened
Power supply（Such as radio-frequency power supply）, excitation power supply applies exciting power to reaction chamber, so that the etching gas in reaction chamber swash
Hair forms plasma；Grid bias power supply is opened, grid bias power supply is biased power to substrate, so that plasma etching substrate,
Until etching predetermined etching depth to substrate.Also, in this step, the stream by improving chamber pressure, increasing passivation gas
The substrate bias power of amount, the flow for reducing etching gas and reduction grid bias power supply, can reduce the open-topped inclination of groove
Angle.
S2, after by the default process time, passes through the stream of chamber pressure, increase etching gas and passivation gas
Amount, and increase the angle of inclination of in the middle part of the side wall of groove and bottom.
Because higher chamber pressure can increase the ionization level of gas, while increasing isotropic etching, this is conducive to
Promote the open top of plasma etching groove, so as to reduce the open-topped angle of inclination of groove；In addition, passing through
Using the flow and the flow of less etching gas of larger passivation gas, be conducive to protecting trenched side-wall, so that ditch
The width of trench bottom is gradually tapered up with the increase of etching depth, i.e. the open-topped angle of inclination of groove is gradually subtracted
It is small.Therefore, by improving chamber pressure in step sl, increasing the flow of passivation gas and reducing the flow of etching gas,
It is in V-shape that can tilt the open top of groove.
In step s 2, by reducing chamber pressure, anisotropic etching can be increased, so as to be conducive to etching side wall
Steep pattern, i.e. the angle of inclination of in the middle part of the side wall of increase groove and bottom, it is hereby achieved that the angle of inclination of side wall is hung down
Straight substrate pattern；Meanwhile, by increasing the flow of etching gas and passivation gas, it can avoid because with the increasing of process time
Plus, the critical size of sidewall bottom（Critical Dimension, CD）Occur shrinking and the phenomenon that etching is interrupted occur, so that
On the basis of sidewall is ensured groove can be made smoothly to reach default total etching depth.
Moreover, in above-mentioned steps S1 and S2, using relatively low substrate bias power, because higher substrate bias power meeting
Flute surfaces are damaged because the energy of plasma is excessive, but also the open top of groove can be made steep, so as to can not obtain
The less V-shape opening in angle of inclination.
In addition, in above-mentioned steps S1 and S2, etching gas include the chemical compound gas of fluorine and sulphur, for example, NF3（Trifluoro
Change nitrogen）、SxFy（Fluorine sulphur compound）Or the mixed gas of the two.Passivation gas includes O2（Oxygen）；Gas is aided in include inertia
Gas, such as helium.By adding inert gas trench sidewall surface can be made linearly to tilt, and avoid side cornice cambered
（bowing）, i.e. in etching process, in the junction of mask and substrate, plasma is etched towards side wall, so that side wall
Produce with cambered inner concave shape pattern, as shown in Figure 4.
It should be noted that in above-mentioned steps S1 and S2, the exciting power of excitation power supply should not be too high or too low, and this is
Because：Although too high exciting power can obtain faster etch rate, trench sidewall surface can be caused radian occur；
And too low exciting power can reduce etch rate, so as to influence process efficiency.
The technological parameter that step S1 is used for：The span of chamber pressure is in 30~60mT, it is preferred that for 40~
50mT；Etching gas are SF6, SF6Flow span in 10~40sccm, it is preferred that be 20sccm；Passivation gas is
Oxygen, the span of the flow of oxygen is in 20~60sccm, it is preferred that be 30~50sccm；Auxiliary gas is helium, helium
Flow span in 40~80sccm, it is preferred that be 50sccm；The span of substrate bias power is in 20~40W, preferably
, it is 30W；The span of the exciting power of excitation power supply is in 400~900W, it is preferred that be 500~600W.
The technological parameter that step S2 is used for：The span of chamber pressure is in 15~40mT, it is preferred that for 20~
30mT；Etching gas are SF6, SF6Flow span in 10~40sccm, it is preferred that be 30sccm；Passivation gas is
Oxygen, the span of the flow of oxygen is in 20~60sccm, it is preferred that be 40sccm；Auxiliary gas is helium, the stream of helium
The span of amount is in 40~80sccm, it is preferred that be 50sccm；The span of substrate bias power is in 20~80W, it is preferred that
For 30~50W；The span of the exciting power of excitation power supply is in 400~900W, it is preferred that be 500~600W.
In actual applications, step S1 process time can be according to the open-topped size of groove and angle of inclination
Setting, it is preferred that the span of process time is in 80~200s；Total etching of the step S2 process time according to needed for technique
Depth and set, i.e.,：Total etching depth is bigger, then the process time is longer；Conversely, total etching depth is smaller, then the process time get over
It is short.
Fig. 5 A and 5B are respectively the substrate shape that the substrate lithographic method and above-mentioned technological parameter provided using the present invention is obtained
The scanning electron microscope (SEM) photograph and ESEM enlarged drawing of looks.By the substrate pattern in Fig. 5 A and 5B and preferable substrate pattern phase in Fig. 1
Than understanding, the open top that the substrate lithographic method provided using the present invention can obtain groove is tilted in the middle part of V-shape, side wall
With the preferable substrate pattern that bottom is steep and lower surface is smooth.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (11)
1. a kind of substrate lithographic method, it is characterised in that comprise the following steps：
S1, is passed through etching gas, passivation gas and auxiliary gas, and open excitation power supply and grid bias power supply to reaction chamber；And
And, it is described by improving chamber pressure, the flow of the increase passivation gas, the flow for reducing the etching gas and reduction
The substrate bias power of grid bias power supply, and reduce the open-topped angle of inclination of groove；
In step sl, the span of the chamber pressure is in 30~60mT, the span of the flow of the passivation gas
In 20~60sccm, the span of the flow of the etching gas is in 10~40sccm, the span of the substrate bias power
In 20~40W；
S2, after by the default process time, by reducing chamber pressure, the increase etching gas and passivation gas
Flow, and increase the angle of inclination of in the middle part of the side wall of groove and bottom；
In step s 2, the span of the chamber pressure is in 15~40mT, the span of the flow of the passivation gas
In 20~60sccm, the span of the flow of the etching gas is in 10~40sccm；
Wherein, the etching gas include the chemical compound gas of fluorine and sulphur；The passivation gas includes oxygen；The auxiliary gas
Including inert gas.
2. substrate lithographic method as claimed in claim 1, it is characterised in that in step sl, the value of the chamber pressure
Scope is in 40~50mT.
3. substrate lithographic method as claimed in claim 1, it is characterised in that in step sl, the flow of the passivation gas
Span in 30~50sccm.
4. substrate lithographic method as claimed in claim 1, it is characterised in that in step sl, the flow of the inert gas
Span in 40~80sccm.
5. substrate lithographic method as claimed in claim 1, it is characterised in that in step s 2, the value of the chamber pressure
Scope is in 20~30mT.
6. substrate lithographic method as claimed in claim 1, it is characterised in that in step s 2, the flow of the inert gas
Span in 40~80sccm.
7. substrate lithographic method as claimed in claim 1, it is characterised in that in step s 2, the value of the substrate bias power
Scope is in 20~80W.
8. substrate lithographic method as claimed in claim 1, it is characterised in that in step S1 and S2, the excitation power supply
The span of exciting power is in 400~900W.
9. substrate lithographic method as claimed in claim 8, it is characterised in that in step S1 and S2, the excitation power supply
The span of exciting power is in 500~600W.
10. substrate lithographic method as claimed in claim 1, it is characterised in that the chemical compound gas of the fluorine and sulphur includes three
Nitrogen fluoride, fluorine sulphur compound or the mixed gas of the two.
11. substrate lithographic method as claimed in claim 1, it is characterised in that the inert gas includes helium.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6071823A (en) * | 1999-09-21 | 2000-06-06 | Promos Technology, Inc | Deep trench bottle-shaped etch in centura mark II NG |
| CN1490849A (en) * | 2002-09-06 | 2004-04-21 | ���������ƴ���ʽ���� | Si etching method and device |
| CN1855382A (en) * | 2005-04-06 | 2006-11-01 | 亿恒科技股份公司 | Method for etching grooves in the semiconductor substrate |
| CN101996877A (en) * | 2009-08-14 | 2011-03-30 | 中芯国际集成电路制造(上海)有限公司 | Etching method and method for forming shallow trench isolation structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050029221A1 (en) * | 2003-08-09 | 2005-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deep trench etching using HDP chamber |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6071823A (en) * | 1999-09-21 | 2000-06-06 | Promos Technology, Inc | Deep trench bottle-shaped etch in centura mark II NG |
| CN1490849A (en) * | 2002-09-06 | 2004-04-21 | ���������ƴ���ʽ���� | Si etching method and device |
| CN1855382A (en) * | 2005-04-06 | 2006-11-01 | 亿恒科技股份公司 | Method for etching grooves in the semiconductor substrate |
| CN101996877A (en) * | 2009-08-14 | 2011-03-30 | 中芯国际集成电路制造(上海)有限公司 | Etching method and method for forming shallow trench isolation structure |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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