CN106571295A - Method for manufacturing a patterned sapphire substrate - Google Patents
Method for manufacturing a patterned sapphire substrate Download PDFInfo
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- CN106571295A CN106571295A CN201510654220.0A CN201510654220A CN106571295A CN 106571295 A CN106571295 A CN 106571295A CN 201510654220 A CN201510654220 A CN 201510654220A CN 106571295 A CN106571295 A CN 106571295A
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- sapphire substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 100
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 70
- 239000010980 sapphire Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 106
- 230000008569 process Effects 0.000 claims abstract description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 10
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 9
- 229910015844 BCl3 Inorganic materials 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 210000002381 plasma Anatomy 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- YPSXFMHXRZAGTG-UHFFFAOYSA-N 4-methoxy-2-[2-(5-methoxy-2-nitrosophenyl)ethyl]-1-nitrosobenzene Chemical compound COC1=CC=C(N=O)C(CCC=2C(=CC=C(OC)C=2)N=O)=C1 YPSXFMHXRZAGTG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
The invention provides a method for manufacturing a patterned sapphire substrate. The method comprises: forming a mask pattern on a sapphire substrate by using a photolithography process; performing a first etching step on the mask pattern and the sapphire substrate with first lower electrode RF power; performing a second etching step on the mask pattern and the sapphire substrate with second lower electrode RF power when the unetched height of the mask pattern is equal to a predetermined value, wherein the second lower electrode RF power is greater than the first lower electrode RF power in order to prevent an inflection point from being formed on the sidewall of a substrate pattern formed by etching the sapphire substrate, and the unetched height is height of the unchanged part of the profile of the mask pattern due to etching effect; and performing an over etching step on the sapphire substrate. The method can effectively improve the problem of a groove created at the etched bottom of the substrate pattern and can improve a process window capability.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular it relates to a kind of manufacture graphic sapphire lining
The method at bottom.
Background technology
With the development and the rapid growth of whole LED industry of LED field technology, to GaN
The research of base LED component also gradually increases.Due to GaN single crystal prepare it is relatively difficult, therefore generally
GaN base LED component is all prepared in Sapphire Substrate.However, due to GaN and sapphire
Lattice paprmeter difference it is larger, their thermal coefficient of expansion and chemical property has very big difference so that
The dislocation and defect concentration of the GaN film for growing on a sapphire substrate is larger, also have impact on LED
The luminous efficiency of device and life-span.
Graphical sapphire substrate (Patterned Sapphire Substrates, PSS) technology is general at present
All over a kind of method of the raising GaN base LED component light extraction efficiency for adopting.Conventional system is described below
The technique for making graphical sapphire substrate.First, dry etching mask is grown on a sapphire substrate
Layer, and mask layer is carved by figure by photoetching process, form mask pattern.Fig. 1 is existing system
Make the schematic diagram of the film layer structure 100 formed during graphical sapphire substrate.As shown in figure 1,
101 is Sapphire Substrate, and 102 is the mask patterns being formed thereon.Next, using inductive
Plasma (Inductively Coupled Plasma, ICP) lithographic technique etches Sapphire Substrate, and
Remove mask pattern, then growth GaN material thereon, the longitudinal extension for making GaN material is changed into horizontal
To extension.The method can effectively reduce the dislocation density of GaN epitaxy material, active so as to reduce
The non-radiative recombination in area, reduces reverse leakage current, improves the life-span of LED component.Active area is sent out
The light for going out, via GaN and Sapphire Substrate interface Multiple Scattering, changes the angle of emergence of total reflection light,
The probability of the light of flip LED from Sapphire Substrate outgoing is increased, so as to the extraction that improve light is imitated
Rate.The reason for comprehensive these two aspects, make the emergent light brightness ratio of the LED of growth on PSS traditional
LED improves 63%, while reverse leakage current reduces, the life-span of LED is also extended.
Fig. 2 a and 2b are that the piece that cuts open of the graphical sapphire substrate formed according to above-mentioned existing process is scanned
Sem image, wherein Fig. 2 b are the partial enlarged drawings of region A in Fig. 2 a.As shown in figures 2 a and 2b,
Etching formed substrate figure 201 be regularly arranged, but substrate figure etching bottom exist it is bright
Aobvious groove 202 (trench, i.e. Concave trough).
To improve the crystal mass of extension GaN film, etching the substrate figure for being formed needs to keep etching
Bottom it is smooth, it is to avoid the groove of etching bottom.In general, etching bottom is more smooth, is more beneficial to
Epitaxial growth, the crystal mass of epitaxially grown GaN film is higher.Therefore, it is to avoid in substrate figure
Etching bottom there is groove it is critical that.
At present, it has been suggested that a kind of by changing method of the Top electrode radio-frequency power to improve groove.The party
Method adjusts Top electrode radio-frequency power in main etching (ME) stage, mainly reduces Top electrode radio-frequency power,
Purpose is to reduce the ratio of high energy plasma, reaches the balance of energetic plasma and free radical ratio.
The shortcoming of the above-mentioned method for improving groove is as follows.First, as best shown in figures 3 a and 3b (Fig. 3 a show
Sapphire etch rate and Top electrode radio-frequency power under planar coil and quartz cover plate configuration are gone out
Relation curve；Fig. 3 b show the quarter of sapphire and photoresist under planar coil and quartz cover plate configuration
Erosion is selected than the relation curve with Top electrode radio-frequency power), change Top electrode radio frequency work(in the ME stages
Rate can cause etch rate and etching selection ratio to reduce, and this is unfavorable for that process window is adjusted.In ME ranks
Section, Top electrode radio-frequency power typically should keep not in the state of etch rate and etching selection ratio are optimal
It is dynamic.Second, not pointing out which stage groove is primarily generated at.
Accordingly, it is desirable to provide a kind of method of manufacture graphical sapphire substrate, to solve at least in part
Certainly the above-mentioned problems in the prior art.
The content of the invention
In order to solve problems of the prior art, a side of the invention at least in part
A kind of face, there is provided method for manufacturing graphical sapphire substrate.Methods described includes：Using light
Carving technology forms on a sapphire substrate mask pattern；With the first bottom electrode radio-frequency power to the mask
Figure and the Sapphire Substrate perform the first etch step；Height is not etched when the mask pattern
During equal to predetermined value, with the second bottom electrode radio-frequency power to the mask pattern and the Sapphire Substrate
The second etch step is performed, wherein the second bottom electrode radio-frequency power is penetrated more than first bottom electrode
Frequency power, is turned with preventing from being formed on the side wall for etching the substrate figure that the Sapphire Substrate is formed
Point, and the wherein described height that do not etch do not changed for the profile of the mask pattern due to corrasion
The height of the part of change；And over etching step is performed to the Sapphire Substrate.
Preferably, the material of the mask pattern is photoresist, bottom antireflective coating and organic polymer
At least one in thing.
Preferably, the predetermined value is more than 0 and less than or equal to 500nm.
Preferably, the predetermined value is 200～400nm.
Preferably, the first bottom electrode radio-frequency power is not more than 400W, and/or electric described second time
Pole radio-frequency power is not less than 500W.
Preferably, the first bottom electrode radio-frequency power is 200～300W, and/or described second time electric
Pole radio-frequency power is 600～800W.
Preferably, the duration of second etch step is 3～5min.
Preferably, the second bottom electrode radio-frequency power is more than the over etching that the over etching step is adopted
Bottom electrode radio-frequency power.
Preferably, the second bottom electrode radio-frequency power is bigger than the over etching bottom electrode radio-frequency power
100～200W.
Preferably, the over etching bottom electrode radio-frequency power that the over etching step is adopted is for 500～600W.
The method of the manufacture graphical sapphire substrate provided according to the present invention, in the bottom of mask pattern
Modification etching is carried out using higher bottom electrode radio-frequency power before starting to shrink at, etching can be made blue precious
The side wall of the substrate figure that stone lining bottom is formed is mellow and full smooth, does not exist in whole etching process
The chance of lofty flex point is produced on the side wall of substrate figure, therefore greatly reduces heavy ion to tpo substrate
The sputtering of the etching bottom of shape, it is to avoid the generation of groove.Therefore, the method that the present invention is provided can have
Effect to be improved produce the problem of groove in etching bottom and can improve process window ability.
A series of concept of simplification is introduced in the content of the invention, these concepts will be in specific embodiment
Further describe in part.Present invention part is not meant to attempt to limit required guarantor
The key feature and essential features of the technical scheme of shield, does not more mean that and attempts to determine required guarantor
The protection domain of the technical scheme of shield.
Below in conjunction with accompanying drawing, advantages and features of the invention are described in detail.
Description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.In accompanying drawing
Embodiments of the present invention and its description are shown, for explaining the principle of the present invention.In the accompanying drawings,
Fig. 1 is the signal of the film layer structure formed during existing manufacture graphical sapphire substrate
Figure；
Fig. 2 a and 2b are that the graphical sapphire substrate formed according to existing process cuts open piece ESEM
Image, wherein Fig. 2 b are the partial enlarged drawings of Fig. 2 a；
Fig. 3 a show sapphire etch rate electricity with planar coil and quartz cover plate configuration
The relation curve of pole radio-frequency power；
Fig. 3 b show that sapphire is selected with the etching of photoresist under planar coil and quartz cover plate configuration
Select than the relation curve with Top electrode radio-frequency power；
Fig. 4 a-4g are shown during manufacture graphical sapphire substrate in the etching bottom of substrate figure
The reason for producing groove；
The method stream of manufacture graphical sapphire substrates of the Fig. 5 to be provided according to one embodiment of the invention
Cheng Tu；And
Fig. 6 a-6c are the manufacture graphical sapphire substrate process that provided according to one embodiment of the invention
In each step obtained cut open piece scanning electron microscope image.
Specific embodiment
In the following description, there is provided substantial amounts of details is so as to thoroughly understand the present invention.So
And, those skilled in the art will be seen that, described below to only relate to presently preferred embodiments of the present invention, this
Invention can be carried out without the need for one or more such details.Additionally, in order to avoid with this
It is bright to obscure, for some technical characteristics well known in the art are not described.
Inventor has found, during manufacture graphical sapphire substrate, at the etching bottom of substrate figure
The reason for portion produces groove is as follows：ICP etches adopted BCl3Gas ionization easily produces BCl2 +Deng
Heavy ion, course of reaction is：BCl3+e→2Cl-+BCl2 +.And shape is etched on a sapphire substrate
Into substrate figure (i.e. PSS figures) during, when heavy ion large percentage, or heavy ion
When energy is larger, due to its sputtering at the side wall flex point of substrate figure, cause in etching bottom
There is quarter in corner, produce groove.Therefore, the flex point and heavy ion in substrate pattern side wall is splashed
It is the principal element for producing groove to penetrate.
The reason for producing groove is described in detail with reference to Fig. 4 a-4g.Fig. 4 a-4g are to form mask pattern
Each step cuts open piece scanning electron microscope image during performing etching to Sapphire Substrate afterwards.First, such as
Shown in Fig. 4 a, photoresist mask pattern 402 is formed with Sapphire Substrate 401, in this example,
The generally cylindrical shape of photoresist mask pattern 402.Afterwards, ICP etching technics is started with to light
Photoresist mask pattern 402 and Sapphire Substrate 401 are performed etching.Flex point master in substrate pattern side wall
Change in shape that will be with photoresist mask pattern 402 in etching process is relevant.Specifically, such as Fig. 4 b
With shown in 4c, from the point of view of profile, etching incipient stage photoresist mask pattern 402 top
Edge corners first, its top starts to contract.Continue then as etching, photoresist mask
The position that figure 402 is etched on the wall of side is moved gradually downward, and its profile is also being gradually changed.
To the etching moment shown in Fig. 4 d, the side wall etching position of photoresist mask pattern 402 reaches exactly to light
The bottom of photoresist mask pattern 402.If continuing etching downwards, the bottom of photoresist mask pattern 402
Width will start zooming out, that is to say, that the bottom of photoresist mask pattern 402 also will start to shrink at.Such as
The bottom width of fruit photoresist mask pattern 402 reduces, and will cause the sapphire that should be covered by mask pattern
Substrate 401 comes out, and the Sapphire Substrate for coming out will start to be etched, and thus cause in shape
Into substrate figure side wall on there is flex point 403, as shown in fig 4e.Afterwards as script is in light
The Sapphire Substrate of the lower section of photoresist mask pattern 402 is further etched, and flex point 403 is moved gradually downward
It is dynamic, as shown in fig. 4f.Afterwards, through the modification of over etching step, the substrate for ultimately forming can be made
The pattern of figure 404 is more rounded smooth, as shown in figure 4g.
As can be seen here, after the bottom crimp of photoresist, can be formed in etching Sapphire Substrate
Lofty flex point is formed on the side wall of substrate figure.Inventor has found, in turning shown in Fig. 4 e and 4f
At point 403, electric field can produce distortion, and herein electric field is most strong, cause previously mentioned high-energy heavy ion
Sputtering is produced herein.Due to the sputtering of high-energy heavy ion, cause to be turned in the bottom of substrate figure 404
There is quarter at angle 405, so as to produce groove (referring to 202 in Fig. 2 a and 2b).
Therefore, eliminating the lofty flex point formed on the side wall of substrate figure in etching process can avoid
The formation of groove.
To avoid the etching bottom in substrate figure from forming groove, it is graphical that the present invention provides a kind of manufacture
The method of Sapphire Substrate.The method is described with reference to Fig. 5.Fig. 5 is according to the present invention
The method 500 of the manufacture graphical sapphire substrate that one embodiment is provided.
Method 500 comprises the steps：
In step 501, mask pattern is formed on a sapphire substrate using photoetching process.
The material of the mask pattern can be photoresist, bottom antireflective coating (BARC) and have
At least one in machine polymer.The organic polymer can be the change including at least C, H and O
Compound.If the material of mask pattern is photoresist, can be by conventional lithographic techniques directly in light
Mask pattern is formed in photoresist.If the material of mask pattern is not photoresist, but such as BARC
Deng softmask, then can form photoresist layer on non-patterned mask layer first, subsequently adopt
Conventional lithographic techniques form photoresist mask pattern.Then, with the photoresist mask pattern as mask,
The pattern of photoresist mask pattern is transferred to by non-pattern by wet corrosion technique or dry etch process
On the mask layer of change, so as to form mask pattern on a sapphire substrate, the photoresist is removed afterwards
Mask pattern.The pattern made in the Sapphire Substrate of GaN base LED component is usually periodically arranged
Row, for example, the cycle of mask pattern can be 2:The width ratio of the peak and valley of 1, i.e. mask pattern
For 2:1.The height at the peak of mask pattern is 2.6 μm.Mask pattern is made using photoresist can be carried
High pattern density, and then improve luminous efficiency.Hereafter by with the material of mask pattern as photoresist retouching
State the present invention.
In step 502, mask pattern and sapphire are served as a contrast with the first bottom electrode radio-frequency power (BRF)
Bottom performs the first etch step.In one embodiment of the invention, etching apparatus is ICP plasmas
Body etching machine, below be described as example.Bottom electrode radio-frequency power controls plasma bombardment
The energy of sapphire substrate surface, relatively low bottom electrode radio-frequency power can provide higher etching selection
Than conversely, higher bottom electrode radio-frequency power provides relatively low etching selection ratio, and causing substrate
The bottom width of figure is less, is unfavorable for the formation of the final graphics pattern after the completion of all etchings.Therefore,
In the first etch step, relatively low bottom electrode radio-frequency power is selected, to realize high etching selection ratio
And the bottom width of larger substrate figure.In a preferred embodiment, the first bottom electrode radio-frequency power
No more than 400W.In a further preferred embodiment, the first bottom electrode radio-frequency power is
200～300W.And other technological parameters that the first etch step is adopted can be with conventional manufacture figure
The main etch step for changing the technique of Sapphire Substrate is essentially identical, suitably shorten except etch period (the
One etch step does not adopt low bottom electrode radio-frequency power to be etched for a long time, its can away from
Or the moment that close flex point occurs stops, and the opportunity of the first etch step stopping is discussed in detail below).
The selection of technological parameter can be varied from according to equipment difference, and the present invention is not limited this.
In one example, some processes parameter of the first etch step is as follows：Pressure in reaction chamber
(Pressure) can be 2～3mT (millitorr)；Top electrode radio-frequency power (SRF) can be
1400～2400W (watt)；Cooling water temperature can be 0～40 degree.
In one embodiment of the invention, the etching gas for adopting in first etch step can be with
It is pure boron chloride (BCl3), or BCl3The mixed gas constituted with impurity gas, wherein,
Impurity gas can be CHF3、SF6、HCl、HBr、Cl2、H2With it is known in the art it is any its
One kind or its any combinations in his suitable impurity gas.In a preferred embodiment, tri-chlorination
Boron (BCl3) flow can be 60～100sccm (standard state milliliter is per minute).In doping example
Such as CHF3Embodiment in, CHF3Flow can be 5～20sccm.
In step 503, when mask pattern is not when etching height equal to predetermined value, with the second bottom electrode
Radio-frequency power performs the second etch step to mask pattern and Sapphire Substrate, wherein the second bottom electrode is penetrated
Frequency power is more than the first bottom electrode radio-frequency power, with the substrate for preventing from being formed in etching Sapphire Substrate
Flex point is formed on the side wall of figure.The height that do not etch refers to the profile of mask pattern not due to etching
The height of the part for acting on and changing.
Understand according to being described above, photoresist mask pattern is performed etching using the first etch step,
The profile of photoresist mask pattern can gradually change from the top down.If having been used up the first etching
Step is etched, then at a time, the bottom of photoresist mask pattern will start to shrink at, afterwards can be
Lofty flex point is formed on the side wall of substrate figure, electric field is most strong at flex point, so as to produce groove.
Therefore, groove is formed to prevent, before the bottom of photoresist mask pattern starts to shrink at, i.e., in light
Photoresist mask pattern remain it is a certain do not etch height when, stop the first etch step.Explained later is not
Etching height.Referring back to Fig. 4 c, the photoresist mask pattern of the top of dotted line 406 is due to etching
And there is alteration of form, the shape of the photoresist mask pattern of the lower section of dotted line 406 is not changed in substantially,
Therefore the height of the photoresist mask pattern between dotted line 406 and the bottom 407 of photoresist mask pattern
Height h is not referred to as etched.
When mask pattern do not etch height reach predetermined value when, start perform the second etch step.
In one preferred embodiment, the predetermined value can be more than 0 and less than or equal to 500nm.Further
Preferably, the predetermined value can be 200～400nm.In the work of the first etch step mentioned above
(cycle is 2 for skill menu and mask pattern：1 and peak height be 2.6 μm) under, the quarter of the first etch step
The erosion time can not will etch height control in 200～400nm in the range of 10～20 minutes (min)
Preferred scope in.It is appreciated that for different process menu and mask pattern, needing suitably
Select the etch period of the first etch step.If starting the second etch step too early, due to
Two etch steps adopt the second bottom electrode radio-frequency power, and it is higher than the first bottom electrode radio-frequency power, carve
Erosion is selected than reducing, and the bottom width and height that can cause the substrate figure of final acquisition reduces, therefore, should
Predetermined value is unsuitable excessive.And predetermined value is too small, i.e., the second etch step is performed too late, then cannot give
Second etch step provides etching surplus.The reaction chamber pressure of the second etch step, Top electrode radio frequency
Power, can be with the basic phase of the first etch step using gas type and its flow and cooling water temperature
Together, only bottom electrode radio-frequency power changes.As described previously, higher bottom electrode radio frequency work(
Rate provides relatively low etching selection ratio, but figure pattern can be more mellow and fuller smooth.Therefore, using higher
Bottom electrode radio-frequency power can prevent from etching process being produced on the side wall of substrate figure it is lofty
Flex point, makes side wall round and smooth excessively, such that it is able to reduce heavy ion sputtering to bottom, greatly reduces groove
Generation.In one embodiment, the second bottom electrode radio-frequency power is not less than 500W, preferably
For 600～800W.Preferably, the etch period of the second etch step can be 3～5min.When this section
Between 3～5min, ten points of keys, be the material time for eliminating lofty flex point.
The etching gas that second etch step is adopted can be identical with the etching gas of the first etch step,
Can be pure BCl3, or BCl3The mixed gas constituted with impurity gas, wherein, impurity gas
Can be CHF3、SF6、HCl、HBr、Cl2、H2With known in the art any other is suitable
One kind or its any combinations in impurity gas.Preferably, the etching gas that the second etch step is adopted
For pure BCl3。
In one example, the process menu of second etch step is as follows：Pressure in reaction chamber
Power can be 2～3mT；Top electrode radio-frequency power (SRF) can be 1400～2400W；Under second
Electrode radio-frequency power (BRF) can be 600～800W；BCl3Flow can be 80～100sccm；
Etch period can be 3～5 minutes；Cooling water temperature can be 0～40 degree.
In step 504, over etching step is performed to Sapphire Substrate.The technique of the over etching step
Parameter can be identical with the over etching step in the technique of conventional manufacture graphical sapphire substrate.Should
The main purpose of over etching step is that the pattern to substrate figure is modified, thus can adopt compared with
Little BCl3Flow and relatively low reaction chamber pressure, it is also possible to penetrated using higher over etching bottom electrode
Frequency power.The etching gas that over etching step is adopted can be with the first etch step and/or the second etching step
Rapid etching gas are identical, you can for pure BCl3, or BCl3With the gaseous mixture of impurity gas composition
Body, wherein, impurity gas can be CHF3、SF6、HCl、HBr、Cl2、H2With this area
One kind or its any combinations in any other the suitable impurity gas known.Preferably, over etching step
The rapid etching gas for adopting are for pure BCl3。
It is appreciated that because compared with common process, this method is adopted in advance in a second etching step
Higher the second bottom electrode radio-frequency power (such as 600W～800W) is performed etching, therefore is crossed and carved
Erosion step avoids the need for very high over etching bottom electrode radio-frequency power, can adopt than common process (
As 600W～700W) lower slightly bottom electrode radio-frequency power modified.In a preferred embodiment,
Second bottom electrode radio-frequency power is more than over etching bottom electrode radio-frequency power.Preferably, the second bottom electrode is penetrated
Big 100～the 200W of frequency power ratio over etching bottom electrode radio-frequency power.In one embodiment, over etching
The over etching bottom electrode radio-frequency power that step is adopted can be 500～600W.It should be noted that
Being performed etching using the second higher bottom electrode radio-frequency power in advance in second etch step can cause to reduce
A certain amount of etching selection ratio (about reducing by 0.01～0.015), so as to reduce height and the bottom of substrate figure
It is wide.And penetrated using the over etching bottom electrode more slightly lower than the second bottom electrode radio-frequency power in over etching step
Frequency power can improve etching selection ratio, make up the height and bottom width of loss, therefore etching result will not
Reduce the height and bottom width of substrate figure.
In one example, the process menu of the over etching step is as follows：Pressure in reaction chamber
Can be 1.5～3mT；Top electrode radio-frequency power (SRF) can be 1400～2000W；Over etching
Bottom electrode radio-frequency power (BRF) can be 500～600W；BCl3Flow can be 60～100sccm；
Etch period can be 10～20 minutes；Cooling water temperature can be 0～40 degree.
Fig. 6 a-6c are the manufacture graphical sapphire substrate process that provided according to one embodiment of the invention
In each step obtained cut open piece scanning electron microscope image.Fig. 6 a after the first etch step to be obtained
What is obtained cuts open piece scanning electron microscope image.As shown in Figure 6 a, after the first etch step, sapphire
Substrate 601 and mask pattern 602 are etched out definite shape.Especially, mask pattern 602 this
When have do not etch height h, it is about 500nm.Fig. 6 b after the second etch step to be obtained
What is obtained cuts open piece scanning electron microscope image.As can be seen that in the relative superiority or inferiority through the second etch step from Fig. 6 b
After the modification of electrode radio-frequency power, etch the side wall of substrate figure that Sapphire Substrate 601 formed compared with
It is smooth, without lofty flex point, there is not groove in etching bottom yet.Fig. 6 c are to pass through quarter
What is obtained after erosion step cuts open piece scanning electron microscope image.As can be seen that through over etching from Fig. 6 c
After the further modification of step, the pattern of the final substrate figure 603 for obtaining is mellow and full smooth, and
Still there is not groove in etching bottom.Therefore, the method for being provided using the present invention can effectively be changed
It is apt to groove problem of the prior art.
The method of the manufacture graphical sapphire substrate provided according to the present invention, in the bottom of mask pattern
Modification etching is carried out using higher bottom electrode radio-frequency power before starting to shrink at, etching can be made blue precious
The side wall of the substrate figure that stone lining bottom is formed is mellow and full smooth, does not exist in whole etching process
The chance of lofty flex point is produced on the side wall of substrate figure, therefore greatly reduces heavy ion to tpo substrate
The sputtering of the etching bottom of shape, it is to avoid the generation of groove.Therefore, the method that the present invention is provided can have
Effect to be improved produce the problem of groove in etching bottom and can improve process window ability.
In describing the invention, it is to be understood that term " on ", D score, "left", "right", " top ",
The orientation or position relationship of the instruction such as " bottom ", " interior ", " outward " is based on the orientation or position when normally using
Relation is put, the description present invention is for only for ease of and is simplified description, rather than indicate or imply indication
Device or element with specific orientation, with specific azimuth configuration and operation, therefore must can not be managed
Solve as limitation of the present invention.Additionally, term " first ", " second " are only used for describing purpose, and not
It is understood that to indicate or implying relative importance or the implicit quantity for indicating indicated technical characteristic.
Thus, " first " is defined, the feature of " second " can be expressed and either implicitly include one or more
Multiple this feature.
It should be appreciated that be referred to as when element or layer " ... on ", " with ... it is adjacent ", " being connected to " or " coupling
Close " other elements or during layer, it can directly on other elements or layer, adjacent thereto, connection
Or other elements or layer are coupled to, or there may be element between two parties or layer.Conversely, working as element quilt
Referred to as " on directly existing ... ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other units
When part or layer, then there is no element between two parties or layer.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-mentioned enforcement
Example is only intended to citing and descriptive purpose, and is not intended to limit the invention to described embodiment
In the range of.In addition it will be appreciated by persons skilled in the art that the invention is not limited in above-mentioned enforcement
Example, teaching of the invention can also make more kinds of variants and modifications, these variants and modifications
Within all falling within scope of the present invention.Protection scope of the present invention will by attached right
Book and its equivalent scope is asked to be defined.
Claims (10)
1. it is a kind of manufacture graphical sapphire substrate method, it is characterised in that methods described includes：
Mask pattern is formed on a sapphire substrate using photoetching process；
First is performed to the mask pattern and the Sapphire Substrate with the first bottom electrode radio-frequency power
Etch step；
When the mask pattern is not when etching height equal to predetermined value, with the second bottom electrode radio-frequency power
Second etch step is performed to the mask pattern and the Sapphire Substrate, wherein described second time electric
Pole radio-frequency power is more than the first bottom electrode radio-frequency power, to prevent from etching the Sapphire Substrate
Flex point is formed on the side wall of the substrate figure for being formed, and the wherein described height that do not etch is covered for described
The height of the part that the profile of film pattern is not changed due to corrasion；And
Over etching step is performed to the Sapphire Substrate.
2. method according to claim 1, it is characterised in that the material of the mask pattern
It is at least one in photoresist, bottom antireflective coating and organic polymer.
3. method according to claim 1, it is characterised in that the predetermined value more than 0 and
Less than or equal to 500nm.
4. method according to claim 3, it is characterised in that the predetermined value is
200～400nm.
5. method according to claim 1, it is characterised in that the first bottom electrode radio frequency
Power is not more than 400W, and/or the second bottom electrode radio-frequency power is not less than 500W.
6. method according to claim 1, it is characterised in that the first bottom electrode radio frequency
Power is 200～300W, and/or the second bottom electrode radio-frequency power is 600～800W.
7. method according to claim 1, it is characterised in that second etch step
Duration is 3～5min.
8. method according to claim 1, it is characterised in that the second bottom electrode radio frequency
Power is more than the over etching bottom electrode radio-frequency power that the over etching step is adopted.
9. method according to claim 8, it is characterised in that the second bottom electrode radio frequency
Big 100～the 200W of over etching bottom electrode radio-frequency power described in power ratio.
10. method according to claim 1, it is characterised in that the over etching step is adopted
Over etching bottom electrode radio-frequency power be 500～600W.
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| CN109873058A (en) * | 2019-01-29 | 2019-06-11 | 华灿光电（浙江）有限公司 | The manufacturing method of patterned substrate and patterned substrate and LED epitaxial slice |
| CN110649134A (en) * | 2018-06-26 | 2020-01-03 | 北京北方华创微电子装备有限公司 | Manufacturing method of patterned substrate, patterned substrate and light emitting diode |
| CN110867503A (en) * | 2018-08-28 | 2020-03-06 | 北京北方华创微电子装备有限公司 | Manufacturing method of patterned substrate, patterned substrate and light emitting diode |
| CN114220893A (en) * | 2021-12-17 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Etching method of sapphire substrate |
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