CN106548934B - Etching method of film and manufacturing method of GaN-based LED - Google Patents
Etching method of film and manufacturing method of GaN-based LED Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 255
- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 51
- 239000010410 layer Substances 0.000 claims description 150
- 239000007789 gas Substances 0.000 claims description 67
- 239000000460 chlorine Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 9
- 229910015844 BCl3 Inorganic materials 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 68
- 229910002601 GaN Inorganic materials 0.000 description 67
- 238000001000 micrograph Methods 0.000 description 15
- 239000006227 byproduct Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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Abstract
The invention discloses a film layer etching method and a GaN-based LED manufacturing method, relates to the technical field of semiconductors, and can effectively avoid the reduction of roughness of an N-type doped GaN layer caused by etching and ensure the performance of the N-type doped GaN layer. The etching method of the film layer comprises the following steps: the method comprises a strong bombardment etching step and a conventional etching step, wherein the free path of particles in etching gas in the strong bombardment etching step is smaller than that of the particles in the etching gas in the conventional etching step, and/or the bombardment energy of the particles in the etching gas in the strong bombardment etching step is higher than that of the particles in the etching gas in the conventional etching step. The invention is applied to manufacturing the GaN-based LED.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a film etching method and a manufacturing method of a GaN-based LED.
Background
A gallium nitride (GaN) -based Light Emitting Diode (LED) is an optoelectronic device, and has a wide application prospect in the aspects of image display, signal indication, illumination, basic research, and the like due to its excellent characteristics of long service life, impact resistance, shock resistance, high efficiency, energy saving, and the like.
The fabrication process of GaN-based LEDs is generally related to their structure. For example, the fabrication process of the GaN-based LED having the structure shown in fig. 1 includes: firstly, sequentially epitaxially growing a laminated N-type doped GaN layer 2, a multi-quantum well layer 3 and a P-type doped GaN layer 4 on a substrate 1; then, etching and removing the surface layers of the P-type doped GaN layer 4, the multiple quantum well layer 3 and the N-type doped GaN layer 2 in the same region to form a mesa structure, wherein the technological parameters of the conventional etching step comprise: the gas pressure is 2 mT-5 mT, the power of the upper electrode is 200W-500W, the power of the lower electrode is 80W-150W, and the etching gas comprises chlorine (Cl)2) And boron trichloride (BCl)3)，Cl2The flow rate of (1) is 70sccm to 150sccm, BCl3The flow rate of the catalyst is 5sccm to 20 sccm; finally, a negative electrode 5 (i.e., N electrode) and a positive electrode 6 (i.e., P electrode) are formed by evaporation, wherein the negative electrode 5 is evaporated on the N-type doped GaN layer and the positive electrode 6 is evaporated on the P-type doped GaN layer 4.
However, in the actual manufacturing process of the inventor of the present application, it is found that the roughness of the N-type doped GaN layer exposed after etching is small, so that the roughness of the position of the anode is different from that of the position of the cathode, which not only causes different contact resistances and different electrical properties of the anode and the cathode, but also causes different roughness of the anode and the cathode, and the color difference exists between the anode and the cathode, which easily causes erroneous judgment when a machine sorts according to color.
Disclosure of Invention
The invention aims to provide a film layer etching method and a GaN-based LED manufacturing method, which can effectively avoid the reduction of the roughness of an N-type doped GaN layer caused by etching and ensure the performance of the N-type doped GaN layer.
In order to achieve the purpose, the etching method of the film layer provided by the invention adopts the following technical scheme:
a method for etching a film layer, the surface of the film layer having a peak and a valley, the method comprising: the method comprises a strong bombardment etching step and a conventional etching step, wherein the free path of particles in etching gas in the strong bombardment etching step is smaller than that of the particles in the etching gas in the conventional etching step, and/or the bombardment energy of the particles in the etching gas in the strong bombardment etching step is higher than that of the particles in the etching gas in the conventional etching step.
The invention provides a film layer etching method, when the free path of particles in etching gas in a strong bombardment etching step is smaller than the free path of particles in etching gas in a conventional etching step, few particles reaching the tip of the film layer surface in the strong bombardment etching step can effectively reduce the bombardment intensity of the particles to the tip, and the method is favorable for maintaining the appearance of the tip. Therefore, when the etching method is adopted to etch and remove the surface layers of the P-type doped GaN layer, the multi-quantum well layer and the N-type doped GaN layer in the partial region in the process of manufacturing the GaN-based LED, the reduction of the roughness of the N-type doped GaN layer caused by etching can be effectively avoided. Meanwhile, the part possibly damaged in the strong bombardment etching step in the N-type doped GaN layer can be etched through the conventional etching step, so that the performance of the N-type doped GaN layer can be ensured, and the increase of the working voltage of the GaN-based LED is avoided.
In addition, the invention also provides a manufacturing method of the GaN-based LED, which adopts the following technical scheme:
a manufacturing method of a GaN-based LED comprises the following steps:
sequentially epitaxially growing an N-type doped GaN layer, a multi-quantum well layer and a P-type doped GaN layer on a substrate;
etching and removing the surface layers of the P-type doped GaN layer, the multi-quantum well layer and the N-type doped GaN layer in the same region by using the etching method of the film layer;
and forming a negative electrode and a positive electrode by evaporation, wherein the negative electrode is formed on the N-type doped GaN layer exposed after etching, and the positive electrode is formed on the P-type doped GaN layer.
In the manufacturing method of the GaN-based LED provided by the invention, the surface layers of the P-type doped GaN layer, the multiple quantum well layer and the N-type doped GaN layer in partial regions are etched and removed by using the etching method of the film layer, so that the roughness of the N-type doped GaN layer caused by etching can be effectively avoided being reduced, the roughness of the position of the anode is close to or the same as that of the position of the cathode, the contact resistance of the anode and the contact resistance of the cathode are close to or the same as each other, the electrical properties of the anode and the cathode are close to or the same as each other, the roughness of the anode and the roughness of the cathode are close to or the same as each other, and the anode and the cathode have almost no color difference, so that the misjudgment caused when a.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a structural view of a GaN-based LED in an embodiment of the invention;
FIG. 2 is a topographical view of a film layer before etching in an embodiment of the present invention;
FIG. 3 is a prior art topographical view of a film layer after etching using a conventional etching step;
FIG. 4 is a diagram illustrating a topography of a film after etching by the etching method for the film according to the second embodiment of the present invention;
FIG. 5 is a diagram illustrating a topography of a film after etching by the etching method for the film according to the third embodiment of the present invention;
FIG. 6 is a scanning electron microscope image of the surface of the film layer before etching in the embodiment of the present invention;
FIG. 7 is a scanning electron microscope image of the surface of the etched film layer with the pressure of the etching gas being 3mT in the embodiment of the present invention;
FIG. 8 is a scanning electron microscope image of the surface of the etched film layer with the pressure of the etching gas being 10mT in the embodiment of the present invention;
FIG. 9 is a scanning electron microscope image of the surface of the etched film layer when the lower electrode power is 60W in the embodiment of the present invention;
FIG. 10 is an enlarged view of a portion of FIG. 9 in accordance with an embodiment of the present invention;
FIG. 11 is a scanning electron microscope image of the surface of the etched film layer when the lower electrode power is 100W in the embodiment of the present invention;
FIG. 12 is an enlarged view of a portion of FIG. 11 in accordance with an embodiment of the present invention;
FIG. 13 is a scanning electron microscope image of the surface of the etched film layer when the lower electrode power is 150W in the embodiment of the present invention;
fig. 14 is a partially enlarged view of fig. 13 in accordance with an embodiment of the present invention.
Description of reference numerals:
1-a substrate; 2-N type doping GaN layer; 3-a multi-quantum well layer;
4-P-type doped GaN layer; 5-negative pole; 6-positive electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a film layer etching method, which is used for etching a film layer with a tip and a valley on the surface. Specifically, the etching method of the film layer includes: the free path of particles in etching gas in the strong bombardment etching step is smaller than that of particles in etching gas in the conventional etching step, and/or the bombardment energy of the particles in the etching gas in the strong bombardment etching step is higher than that of the particles in the etching gas in the conventional etching step.
The method for etching the film layer in the embodiment of the invention may only comprise one strong bombardment etching step and one conventional etching step, or may comprise a plurality of strong bombardment etching steps and a plurality of conventional etching steps, and at this time, the plurality of strong bombardment etching steps and the plurality of conventional etching steps are performed alternately, which is not limited in the embodiment of the invention.
It should be noted that the above conventional etching step refers to a conventional etching step adopted in the prior art when etching the surface layers of the P-type doped GaN layer, the multiple quantum well layer and the N-type doped GaN layer when forming the GaN-based LED. Specifically, the process parameters of the conventional etching step include: the gas pressure is 2 mT-5 mT, the power of the upper electrode is 200W-500W, the power of the lower electrode is 80W-150W, and the etching gas comprises chlorine (Cl)2) And boron trichloride (BCl)3)，Cl2The flow rate of (1) is 70sccm to 150sccm, BCl3The flow rate of (2) is 5sccm to 20 sccm.
The etching method of the film layer in the embodiment of the invention comprises a strong bombardment etching step and a conventional etching step, wherein the sum of the etching depths of the film layer in the strong bombardment etching step and the conventional etching step is the integral etching depth of the film layer, for example, the etching depth of the film layer in the strong bombardment etching step is 50% -80% of the integral etching depth of the film layer, and the etching depth of the film layer in the conventional etching step is 20% -50% of the integral etching depth of the film layer. Wherein, the integral etching depth of the film layer can be 1.2-1.4 μm. Therefore, in the embodiment of the present invention, the etching depth of the film layer in the conventional etching step is only half or less than that in the prior art, so that the etching time of the conventional etching step in the embodiment of the present invention is shorter than that in the prior art, for example, the etching time of the conventional etching step in the prior art is 10min, and the etching time of the conventional etching step in the embodiment of the present invention is 5 min.
It is also necessary to supplement that, the etching method of the film layer includes three specific methods: the first specific method is that the free path of particles in etching gas in the strong bombardment etching step is smaller than that of particles in etching gas in the conventional etching step, at the moment, fewer particles reach the tip of the surface of the film layer in the strong bombardment etching step, the bombardment strength of the particles to the tip can be effectively reduced, the shape of the tip is favorably maintained, and although the bombardment to by-products deposited at the valley is possibly smaller and the shape of the valley is not ideal, the film layer after etching is still rougher than that in the prior art; in the second specific method, the bombardment energy of the particles in the etching gas in the strong bombardment etching step is higher than that of the particles in the etching gas in the conventional etching step, at the moment, the bombardment intensity of the particles to the valleys on the surface of the film layer in the strong bombardment etching step is increased, the deposition of byproducts in the valleys can be effectively reduced, the shape of the valleys is favorably maintained, although the etching to the tips is possibly aggravated and the shape of the tips is not ideal, the film layer after etching is still rougher than that in the prior art; in the third specific method, the free path of the particles in the etching gas in the step of the strong bombardment etching is smaller than the free path of the particles in the etching gas in the conventional etching step, and the bombardment energy of the particles in the etching gas in the step of the strong bombardment etching is higher than the bombardment energy of the particles in the etching gas in the conventional etching step, which can be helpful for maintaining the morphology of the tip and the morphology of the valley, although the morphology of the tip may not be as good as that maintained in the first specific method and the morphology of the valley may not be as good as that maintained in the second specific method, the morphology of the tip and the morphology of the valley can be maintained in the third specific method, so that the roughness of the film layer etched by the third specific method is the largest, and therefore, the third specific method is preferably used for etching the film layer in the embodiment of the present invention.
In order to facilitate a person skilled in the art to more intuitively understand the advantages of the etching method for the film layer in the embodiment of the present invention, the following compares the etching method for the film layer in the embodiment of the present invention with the conventional etching step in the prior art with reference to the drawings.
The morphology of the film layer before etching is shown in fig. 2, and the tip and the valley of the surface of the film layer before etching are both very sharp. When the conventional etching step in the prior art is adopted to etch the film, the film has a shape as shown in fig. 3, and the particles (indicated by arrows in the figure) in the etching gas severely bombard the tips during the etching process, so that the tips become smooth, and meanwhile, the byproducts are deposited at the valleys, so that the valleys become smooth, and the roughness of the film is greatly reduced. After the film layer is etched by the second specific method, the morphology of the film layer is as shown in fig. 4, and as the bombardment intensity of the particles (indicated by arrows in the figure) to the valleys on the surface of the film layer is increased in the step of strong bombardment etching, the deposition of by-products in the valleys is effectively reduced, so that the valleys are still very sharp, but the bombardment intensity of the particles to the tips in the etching gas is still higher, so that the tips still become smooth. After the film layer is etched by adopting the third specific method, the appearance of the film layer is as shown in fig. 5, because the bombardment intensity of the particles (shown by arrows in the figure) on the valley of the surface of the film layer is increased in the strong bombardment etching step, the deposition of by-products in the valley is effectively reduced, so that the valley is still very sharp, meanwhile, the bombardment intensity of the particles in the etching gas on the tip is reduced, the tip is also very sharp, so that the roughness of the film layer is larger, and the reduction of the roughness of the film layer caused by etching is effectively avoided.
Optionally, in the embodiment of the present invention, the pressure of the etching gas in the strong bombardment etching step is greater than the pressure of the etching gas in the conventional etching step, so that the free path of the particles in the etching gas in the strong bombardment etching step is smaller than the free path of the particles in the etching gas in the conventional etching step. Illustratively, the pressure of the etching gas in the strong bombardment etching step is 10mT to 20mT, and the pressure of the etching gas in the conventional etching step is 2mT to 5 mT.
The influence of the pressure of the etching gas on the morphology of the etched film will be described in detail with reference to the accompanying drawings.
Fig. 6 is a scanning electron microscope image of the surface of the film layer before the film layer is etched by using the above etching method, and it can be seen from fig. 6 that the tips and valleys of the surface of the film layer are very sharp. Fig. 7 and 8 are scanning electron microscope images of the surface of the film after the film is etched by using different pressures of etching gases (other process parameters are the same). When the pressure of the etching gas is 3mT, the scanning electron microscope image of the surface of the film layer is shown in FIG. 7, and when the pressure of the etching gas is 10mT, the scanning electron microscope image of the surface of the film layer is shown in FIG. 8, and comparing FIG. 7 with FIG. 8, it can be known that the tip and the valley of the surface of the film layer in FIG. 8 are sharper, and the film layer is rougher, so that the larger the pressure of the etching gas is, the larger the roughness of the surface of the etched film layer is.
Similarly, the bombardment energy of the particles in the etching gas in the step of strongly bombarding the etching gas is higher than the bombardment energy of the particles in the etching gas in the conventional etching step, optionally, in the embodiment of the present invention, the lower electrode power in the step of strongly bombarding the etching gas is higher than the lower electrode power in the conventional etching step, so that the bombardment energy of the particles in the etching gas in the step of strongly bombarding the etching gas is higher than the bombardment energy of the particles in the etching gas in the conventional etching step. Illustratively, the lower electrode power in the strong bombardment etching step is 170W-300W, and the lower electrode power in the conventional etching step is 80W-150W.
The influence of the pressure of the etching gas on the morphology of the etched film will be described in detail with reference to the accompanying drawings.
Fig. 6 is a scanning electron microscope image of the surface of the film layer before the film layer is etched by using the above etching method, and it can be seen from fig. 6 that the tips and valleys of the surface of the film layer are very sharp. Fig. 9, fig. 10, fig. 11, fig. 12, fig. 13 and fig. 14 are scanning electron microscope images of the surface of the film after the film is etched with different lower electrode powers (other process parameters are the same). Wherein, when the upper electrode power is 60W, the scanning electron microscope images of the surface of the film layer are fig. 9 and 10, when the upper electrode power is 100W, the scanning electron microscope images of the surface of the film layer are fig. 11 and 12, when the upper electrode power is 150W, the scanning electron microscope images of the surface of the film layer are fig. 13 and 14, the sharp degree of the tip and the valley of the surface of the film layer in fig. 9 and 10 is the smallest, the roughness of the film layer is the smallest, the sharp degree of the tip and the valley of the surface of the film layer in fig. 11 and 12 is the middle, the roughness of the film layer is the smallest and the middle, the sharp degree of the tip and the valley of the surface of the film layer in fig. 13 and 14 is the largest, and the roughness of the film layer is the largest, therefore, the larger the lower electrode power is, the larger.
In addition, other process parameters in the etching method of the film layer in the embodiment of the invention are as follows: in the step of strong bombardment etching and the step of conventional etching, the power of the upper electrode is 200W-500W, and etching gases comprise Cl2And BCl3，Cl2The flow rate of the gas is 70sccm to 150sccm, BCl3The flow rate of the etching solution is 5sccm to 20sccm, and the etching time is 5 min. Wherein, Cl2As the main etching gas, Cl is used in the etching process2The generated particles react with the film layer chemically to etch the film layer, BCl3To assist the etching gas, BCl is used in the etching process3The generated particles carry out physical bombardment on the film layer to assist the etching.
The embodiment of the invention provides a film layer etching method, when the free path of particles in etching gas in a strong bombardment etching step is smaller than that of particles in etching gas in a conventional etching step, few particles reach the tip of the surface of a film layer in the strong bombardment etching step, the bombardment strength of the particles to the tip can be effectively reduced, the shape of the tip is favorably maintained, when the bombardment energy of the particles in the etching gas in the strong bombardment etching step is higher than that of the particles in the etching gas in the conventional etching step, the bombardment strength of the particles to the valley of the surface of the film layer in the strong bombardment etching step is increased, the deposition of byproducts in the valley can be effectively reduced, and the shape of the valley is favorably maintained. Therefore, when the etching method is adopted to etch and remove the surface layers of the P-type doped GaN layer, the multi-quantum well layer and the N-type doped GaN layer in the partial region in the process of manufacturing the GaN-based LED, the reduction of the roughness of the N-type doped GaN layer caused by etching can be effectively avoided. Meanwhile, the part possibly damaged in the strong bombardment etching step in the N-type doped GaN layer can be etched through the conventional etching step, so that the performance of the N-type doped GaN layer can be ensured, and the increase of the working voltage of the GaN-based LED is avoided.
In addition, the embodiment of the invention also provides a manufacturing method of the GaN-based LED, which is described below with reference to the structure of the GaN-based LED shown in fig. 1. Specifically, the manufacturing method of the GaN-based LED comprises the following steps:
an N-type doped GaN layer 2, a multiple quantum well layer 3, and a P-type doped GaN layer 4 are epitaxially grown in this order on a substrate 1, which substrate 1 may be a sapphire substrate, for example. And etching and removing the surface layers of the P-type doped GaN layer 4, the multi-quantum well layer 3 and the N-type doped GaN layer 2 in the same region by using the etching method of the film layer. A negative electrode 5 (i.e., N electrode) and a positive electrode 6 (i.e., P electrode) are formed by evaporation, wherein the negative electrode 5 is formed on the N-type doped GaN layer 2 exposed after etching, and the positive electrode 6 is formed on the P-type doped GaN layer 4.
The reason why the epitaxial growth process is selected to form the N-type doped GaN layer 2, the multiple quantum well layer 3 and the P-type doped GaN layer 4 is that the roughness of the N-type doped GaN layer 2 which is epitaxially grown is large, and light which is emitted from an active region of the GaN-based LED and irradiates the N-type doped GaN layer 2 can be scattered for many times on an interface between the N-type doped GaN layer 2 and the substrate 1, so that the incident angle of total reflection light is changed, the probability of total reflection of the part of light between the N-type doped GaN layer 2 and the substrate 1 is reduced, and the probability of light emission from the GaN-based LED can be increased.
In the manufacturing method of the GaN-based LED provided by the invention, the surface layers of the P-type doped GaN layer, the multiple quantum well layer and the N-type doped GaN layer in partial regions are etched and removed by using the etching method of the film layer, so that the roughness of the N-type doped GaN layer caused by etching can be effectively avoided being reduced, the roughness of the position of the anode is close to or the same as that of the position of the cathode, the contact resistance of the anode and the contact resistance of the cathode are close to or the same as each other, the electrical properties of the anode and the cathode are close to or the same as each other, the roughness of the anode and the roughness of the cathode are close to or the same as each other, the anode and the cathode have almost no color difference, and the misjudgment caused when a machine.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (8)
1. A method for etching a film, the film having a surface roughness with peaks and valleys, the method comprising: a strong bombardment etching step and a conventional etching step, wherein the free path of particles in etching gas in the strong bombardment etching step is smaller than that of the particles in the etching gas in the conventional etching step, and/or the bombardment energy of the particles in the etching gas in the strong bombardment etching step is higher than that of the particles in the etching gas in the conventional etching step;
the etching depth of the film layer etched in the strong bombardment etching step is 50% -80% of the whole etching depth of the film layer, and the etching depth of the film layer etched in the conventional etching step is 20% -50% of the whole etching depth of the film layer;
in the step of strong bombardment etching and the step of conventional etching, the power of an upper electrode is 200W-500W, and etching gases comprise chlorine and chlorineBoron chloride, wherein the flow rate of chlorine is 70 sccm-150 sccm, the flow rate of boron trichloride is 5 sccm-20 sccm, and the etching time is 5 min; wherein Cl is2For the main etching gas, BCl3To assist the etching gas.
2. The method for etching the film according to claim 1, wherein the pressure of the etching gas in the step of strongly bombarding the etching gas is greater than the pressure of the etching gas in the step of normally etching the film.
3. The method for etching a film according to claim 2, wherein the pressure of the etching gas in the step of strongly bombarding the etching gas is 10 mT-20 mT, and the pressure of the etching gas in the step of normally etching is 2 mT-5 mT.
4. The method for etching the film according to any one of claims 1 to 3, wherein the lower electrode power in the strong bombardment etching step is greater than the lower electrode power in the conventional etching step.
5. The method for etching the film according to claim 4, wherein the power of the lower electrode in the step of strongly bombarding and etching is 170W-300W, and the power of the lower electrode in the step of conventionally etching is 80W-150W.
6. The method for etching the film according to claim 1, wherein the method for etching the film comprises only one step of the high bombardment etching and only one step of the conventional etching.
7. The method for etching the film according to claim 1, wherein the method for etching the film comprises a plurality of the high bombardment etching steps and a plurality of the conventional etching steps, and the plurality of the high bombardment etching steps and the plurality of the conventional etching steps are performed alternately.
8. A manufacturing method of a GaN-based LED is characterized by comprising the following steps:
sequentially epitaxially growing an N-type doped GaN layer, a multi-quantum well layer and a P-type doped GaN layer on a substrate;
etching and removing the surface layers of the P-type doped GaN layer, the multi-quantum well layer and the N-type doped GaN layer in the same region by using the etching method of the film layer according to any one of claims 1 to 7;
and forming a negative electrode and a positive electrode by evaporation, wherein the negative electrode is formed on the N-type doped GaN layer exposed after etching, and the positive electrode is formed on the P-type doped GaN layer.
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