JP2004523117A5 - - Google Patents

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Publication number
JP2004523117A5
JP2004523117A5 JP2002561333A JP2002561333A JP2004523117A5 JP 2004523117 A5 JP2004523117 A5 JP 2004523117A5 JP 2002561333 A JP2002561333 A JP 2002561333A JP 2002561333 A JP2002561333 A JP 2002561333A JP 2004523117 A5 JP2004523117 A5 JP 2004523117A5
Authority
JP
Japan
Prior art keywords
optically active
region
active device
optical
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002561333A
Other languages
English (en)
Japanese (ja)
Other versions
JP4027801B2 (ja
JP2004523117A (ja
Filing date
Publication date
Priority claimed from GB0101640A external-priority patent/GB2371404B/en
Application filed filed Critical
Publication of JP2004523117A publication Critical patent/JP2004523117A/ja
Publication of JP2004523117A5 publication Critical patent/JP2004523117A5/ja
Application granted granted Critical
Publication of JP4027801B2 publication Critical patent/JP4027801B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002561333A 2001-01-23 2002-01-23 光学装置のヒートシンク上への取り付け Expired - Fee Related JP4027801B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0101640A GB2371404B (en) 2001-01-23 2001-01-23 Improvements in or relating to optical devices
PCT/GB2002/000293 WO2002061898A1 (en) 2001-01-23 2002-01-23 Mounting of optical device on heat sink

Publications (3)

Publication Number Publication Date
JP2004523117A JP2004523117A (ja) 2004-07-29
JP2004523117A5 true JP2004523117A5 (enExample) 2005-12-22
JP4027801B2 JP4027801B2 (ja) 2007-12-26

Family

ID=9907274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002561333A Expired - Fee Related JP4027801B2 (ja) 2001-01-23 2002-01-23 光学装置のヒートシンク上への取り付け

Country Status (9)

Country Link
US (1) US6671300B2 (enExample)
EP (1) EP1354381B1 (enExample)
JP (1) JP4027801B2 (enExample)
CN (1) CN1236534C (enExample)
AT (1) ATE298941T1 (enExample)
DE (1) DE60204848T2 (enExample)
ES (1) ES2246392T3 (enExample)
GB (1) GB2371404B (enExample)
WO (1) WO2002061898A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7333689B2 (en) * 2005-09-30 2008-02-19 The Trustees Of Princeton University Photonic integrated devices having reduced absorption loss
US20070218454A1 (en) * 2006-03-16 2007-09-20 Brennen Reid A Optical detection cell for micro-fluidics
US8647590B2 (en) * 2006-03-16 2014-02-11 Agilent Technologies, Inc. Optical detection cell with micro-fluidic chip
JP4697879B2 (ja) * 2006-05-09 2011-06-08 東京エレクトロン株式会社 サーバ装置、およびプログラム
US7826693B2 (en) 2006-10-26 2010-11-02 The Trustees Of Princeton University Monolithically integrated reconfigurable optical add-drop multiplexer
US10203461B2 (en) * 2015-09-04 2019-02-12 Raytheon Company Techniques for forming waveguides for use in laser systems or other systems and associated devices
JP7458134B2 (ja) * 2019-04-02 2024-03-29 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子
US11588302B2 (en) 2019-06-21 2023-02-21 Seagate Technology Llc Optical switches

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54115088A (en) 1978-02-28 1979-09-07 Nec Corp Double hetero junction laser element of stripe type
JPS6054794B2 (ja) * 1979-11-01 1985-12-02 富士通株式会社 光半導体装置
US4511408A (en) 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
US4639275A (en) 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
US4594603A (en) 1982-04-22 1986-06-10 Board Of Trustees Of The University Of Illinois Semiconductor device with disordered active region
US4585491A (en) 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4684653A (en) 1985-03-08 1987-08-04 The Trustees Of Princeton University Pyrido(2,3-d)pyrimidine derivatives
US4727556A (en) 1985-12-30 1988-02-23 Xerox Corporation Semiconductor lasers fabricated from impurity induced disordering
US4871690A (en) 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
GB2198603A (en) 1986-12-05 1988-06-15 Philips Electronic Associated Divider circuit
US4857971A (en) 1987-03-23 1989-08-15 Xerox Corporation (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures
DE3737191A1 (de) * 1987-11-03 1989-05-24 Fraunhofer Ges Forschung Halbleiterdiodenlaser
US5327444A (en) * 1989-04-20 1994-07-05 Massachusetts Institute Of Technology Solid state waveguide lasers
DE3925201A1 (de) * 1989-07-29 1991-02-07 Messerschmitt Boelkow Blohm Optische bank zur halterung optischer, elektrischer u.a. komponenten
JP2869279B2 (ja) * 1992-09-16 1999-03-10 三菱電機株式会社 半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ
US5384797A (en) 1992-09-21 1995-01-24 Sdl, Inc. Monolithic multi-wavelength laser diode array
JPH07162086A (ja) * 1993-12-10 1995-06-23 Mitsubishi Electric Corp 半導体レーザの製造方法
US5521406A (en) * 1994-08-31 1996-05-28 Texas Instruments Incorporated Integrated circuit with improved thermal impedance
JPH08330672A (ja) * 1995-05-31 1996-12-13 Nec Corp 半導体レーザ装置
US5680412A (en) * 1995-07-26 1997-10-21 Demaria Electrooptics Systems, Inc. Apparatus for improving the optical intensity induced damage limit of optical quality crystals
EP0757393A3 (en) * 1995-08-02 1999-11-03 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
US6326646B1 (en) * 1999-11-24 2001-12-04 Lucent Technologies, Inc. Mounting technology for intersubband light emitters

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