JP2004520710A5 - - Google Patents
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- Publication number
- JP2004520710A5 JP2004520710A5 JP2002560247A JP2002560247A JP2004520710A5 JP 2004520710 A5 JP2004520710 A5 JP 2004520710A5 JP 2002560247 A JP2002560247 A JP 2002560247A JP 2002560247 A JP2002560247 A JP 2002560247A JP 2004520710 A5 JP2004520710 A5 JP 2004520710A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser device
- waveguide
- layer
- inactive region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 42
- 239000010410 layer Substances 0.000 claims 25
- 239000000463 material Substances 0.000 claims 18
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000005253 cladding Methods 0.000 claims 6
- 230000003287 optical effect Effects 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 2
- 239000002800 charge carrier Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 230000005855 radiation Effects 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000012792 core layer Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000001451 molecular beam epitaxy Methods 0.000 claims 1
- 238000003892 spreading Methods 0.000 claims 1
- 230000007847 structural defect Effects 0.000 claims 1
- 239000011800 void material Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0101641A GB2371405B (en) | 2001-01-23 | 2001-01-23 | Improvements in or relating to semiconductor lasers |
| PCT/GB2002/000290 WO2002060023A1 (en) | 2001-01-23 | 2002-01-23 | Improvements in or relating to semiconductor lasers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004520710A JP2004520710A (ja) | 2004-07-08 |
| JP2004520710A5 true JP2004520710A5 (enExample) | 2007-04-19 |
Family
ID=9907275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002560247A Pending JP2004520710A (ja) | 2001-01-23 | 2002-01-23 | 半導体レーザにおける又は関係する改良 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6717971B2 (enExample) |
| EP (1) | EP1356553B1 (enExample) |
| JP (1) | JP2004520710A (enExample) |
| CN (1) | CN1224147C (enExample) |
| AT (1) | ATE282901T1 (enExample) |
| DE (1) | DE60201974T2 (enExample) |
| ES (1) | ES2236499T3 (enExample) |
| GB (1) | GB2371405B (enExample) |
| WO (1) | WO2002060023A1 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7173953B2 (en) * | 2001-11-06 | 2007-02-06 | Bookham Technology Plc | Anti-reflection coatings for semiconductor lasers |
| GB2387481B (en) * | 2002-04-10 | 2005-08-31 | Intense Photonics Ltd | Integrated active photonic device and photodetector |
| US6878959B2 (en) * | 2002-11-22 | 2005-04-12 | Agilent Technologies, Inc. | Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice |
| US10048499B2 (en) | 2005-11-08 | 2018-08-14 | Lumus Ltd. | Polarizing optical system |
| JP2008198944A (ja) * | 2007-02-15 | 2008-08-28 | Fujitsu Ltd | 半導体光集積素子 |
| DE102007026925A1 (de) * | 2007-02-28 | 2008-09-04 | Osram Opto Semiconductors Gmbh | Integrierte Trapezlaseranordnung und Verfahren zu deren Herstellung |
| CN101105503B (zh) * | 2007-06-02 | 2010-10-27 | 中北大学 | 捷联式惯导测量组合中加速度计装配误差标量修正方法 |
| JP4971235B2 (ja) * | 2008-04-08 | 2012-07-11 | 日本電信電話株式会社 | 半導体光集積素子 |
| DE102008025922B4 (de) | 2008-05-30 | 2020-02-06 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser mit Phasenstruktur |
| US8232114B2 (en) * | 2009-01-27 | 2012-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | RTP spike annealing for semiconductor substrate dopant activation |
| JP2012015266A (ja) * | 2010-06-30 | 2012-01-19 | Sony Corp | 半導体光増幅器 |
| ES2396109B1 (es) * | 2011-07-05 | 2013-12-27 | Abengoa Solar New Technologies, S.A. | Dispositivo para la transformación de energía solar concentrada. |
| ES2396103B1 (es) * | 2011-07-05 | 2014-01-30 | Abengoa Solar New Technologies, S.A. | Planta solar. |
| US8927306B2 (en) * | 2013-02-28 | 2015-01-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Etched-facet lasers having windows with single-layer optical coatings |
| US8988770B2 (en) * | 2013-03-14 | 2015-03-24 | Oracle International Corporation | Hybrid optical source with semiconductor reflector |
| CN104184045B (zh) * | 2014-08-22 | 2017-04-05 | 华中科技大学 | 一种定波长单纵模工作的脊波导分布反馈半导体激光器 |
| CN104201566B (zh) * | 2014-08-22 | 2017-12-29 | 华中科技大学 | 一种具有高单纵模成品率的脊波导分布反馈半导体激光器 |
| DE102015105438A1 (de) * | 2015-04-09 | 2016-10-13 | M2K-Laser Gmbh | Monolithische Diodenlaseranordnung |
| CA3007002C (en) | 2016-11-08 | 2023-02-07 | Lumus Ltd | Light-guide device with optical cutoff edge and corresponding production methods |
| TWI609541B (zh) * | 2016-12-12 | 2017-12-21 | 聯亞光電工業股份有限公司 | 半導體雷射裝置 |
| FR3067866B1 (fr) * | 2017-06-19 | 2022-01-14 | Commissariat Energie Atomique | Composant laser semiconducteur hybride et procede de fabrication d'un tel composant |
| WO2019016813A1 (en) | 2017-07-19 | 2019-01-24 | Lumus Ltd. | LIQUID CRYSTAL LIGHTING ON SILICON VIA OPTICAL ELEMENT GUIDE OF LIGHT |
| CN113725725B (zh) * | 2017-09-28 | 2025-05-02 | 苹果公司 | 使用量子阱混合技术的激光架构 |
| US10551544B2 (en) | 2018-01-21 | 2020-02-04 | Lumus Ltd. | Light-guide optical element with multiple-axis internal aperture expansion |
| IL259518B2 (en) | 2018-05-22 | 2023-04-01 | Lumus Ltd | Optical system and method for improving light field uniformity |
| AU2019335612B2 (en) | 2018-09-09 | 2024-07-11 | Lumus Ltd. | Optical systems including light-guide optical elements with two-dimensional expansion |
| US12124050B2 (en) | 2019-02-28 | 2024-10-22 | Lumus Ltd. | Compact collimated image projector |
| WO2021117033A1 (en) | 2019-12-08 | 2021-06-17 | Lumus Ltd. | Optical systems with compact image projector |
| KR20230015318A (ko) * | 2020-04-03 | 2023-01-31 | 오토모티브 코우얼리션 포 트래픽 세이프티, 인크. | 광범위하게 튜닝 가능한 단일 모드 방출 반도체 레이저 |
| CN218848473U (zh) | 2020-05-12 | 2023-04-11 | 鲁姆斯有限公司 | 包括投影光学器件和光导管的设备 |
| CN115885215A (zh) | 2020-08-26 | 2023-03-31 | 鲁姆斯有限公司 | 使用白光作为源生成彩色图像 |
| DE202021104723U1 (de) | 2020-09-11 | 2021-10-18 | Lumus Ltd. | An ein optisches Lichtleiterelement gekoppelter Bildprojektor |
| US12204155B2 (en) | 2021-09-24 | 2025-01-21 | Apple Inc. | Chip-to-chip optical coupling for photonic integrated circuits |
| US12426139B1 (en) | 2022-06-27 | 2025-09-23 | Apple Inc. | Feedback control of a diode element |
| US12320983B1 (en) | 2022-08-18 | 2025-06-03 | Lumus Ltd. | Image projector with polarizing catadioptric collimator |
| CN119965680B (zh) * | 2024-12-26 | 2025-11-14 | 中山大学 | 一种半导体光放大器及其制备方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5624397B2 (enExample) * | 1972-07-21 | 1981-06-05 | ||
| JPS54115088A (en) | 1978-02-28 | 1979-09-07 | Nec Corp | Double hetero junction laser element of stripe type |
| US4511408A (en) | 1982-04-22 | 1985-04-16 | The Board Of Trustees Of The University Of Illinois | Semiconductor device fabrication with disordering elements introduced into active region |
| JPS586191A (ja) * | 1981-07-03 | 1983-01-13 | Hitachi Ltd | 半導体レ−ザ装置 |
| US4594603A (en) | 1982-04-22 | 1986-06-10 | Board Of Trustees Of The University Of Illinois | Semiconductor device with disordered active region |
| US4639275A (en) | 1982-04-22 | 1987-01-27 | The Board Of Trustees Of The University Of Illinois | Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor |
| JPS58192394A (ja) * | 1982-05-07 | 1983-11-09 | Hitachi Ltd | 半導体レ−ザ装置 |
| JPS5944884A (ja) * | 1982-09-06 | 1984-03-13 | Nippon Telegr & Teleph Corp <Ntt> | 分布帰還形半導体接合レ−ザ |
| US4831630A (en) * | 1983-04-14 | 1989-05-16 | Xerox Corporation | Phased-locked window lasers |
| US4585491A (en) | 1983-09-02 | 1986-04-29 | Xerox Corporation | Wavelength tuning of quantum well lasers by thermal annealing |
| US4684653A (en) | 1985-03-08 | 1987-08-04 | The Trustees Of Princeton University | Pyrido(2,3-d)pyrimidine derivatives |
| US4727556A (en) | 1985-12-30 | 1988-02-23 | Xerox Corporation | Semiconductor lasers fabricated from impurity induced disordering |
| US4871690A (en) | 1986-01-21 | 1989-10-03 | Xerox Corporation | Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects |
| DE3751548T2 (de) * | 1986-07-25 | 1996-04-11 | Mitsubishi Electric Corp | Halbleiterlaser. |
| GB2198603A (en) | 1986-12-05 | 1988-06-15 | Philips Electronic Associated | Divider circuit |
| JPH0648742B2 (ja) * | 1987-02-09 | 1994-06-22 | 日本電気株式会社 | 半導体レ−ザの製造方法 |
| US4857971A (en) | 1987-03-23 | 1989-08-15 | Xerox Corporation | (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures |
| US4845725A (en) * | 1987-05-20 | 1989-07-04 | Spectra Diode Laboratories, Inc. | Window laser with high power reduced divergence output |
| US4764934A (en) * | 1987-07-27 | 1988-08-16 | Ortel Corporation | Superluminescent diode and single mode laser |
| US4875216A (en) * | 1987-11-30 | 1989-10-17 | Xerox Corporation | Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications |
| DE68926029T2 (de) * | 1988-12-21 | 1996-09-12 | Optical Measurement Technology | Optische Halbleitervorrichtung |
| JPH0448792A (ja) * | 1990-06-15 | 1992-02-18 | Anritsu Corp | 窓領域を有する半導体能動光素子 |
| JP3142333B2 (ja) * | 1991-12-17 | 2001-03-07 | 株式会社東芝 | 分布帰還型半導体レ−ザ及びその駆動方法 |
| US5384797A (en) | 1992-09-21 | 1995-01-24 | Sdl, Inc. | Monolithic multi-wavelength laser diode array |
| JPH09326504A (ja) * | 1996-06-06 | 1997-12-16 | Nippon Telegr & Teleph Corp <Ntt> | スーパールミネッセントダイオード |
| JPH10163563A (ja) * | 1996-11-29 | 1998-06-19 | Furukawa Electric Co Ltd:The | 半導体レーザ |
| FR2770938B1 (fr) * | 1997-11-10 | 1999-12-10 | Alsthom Cge Alcatel | Amplificateur optique semi-conducteur et source laser integree l'incorporant |
| US6052397A (en) * | 1997-12-05 | 2000-04-18 | Sdl, Inc. | Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam |
| JPH11354880A (ja) * | 1998-06-03 | 1999-12-24 | Rohm Co Ltd | 半導体レーザ素子およびその製造方法 |
| GB0018576D0 (en) * | 2000-07-27 | 2000-09-13 | Univ Glasgow | Improved semiconductor laser |
-
2001
- 2001-01-23 GB GB0101641A patent/GB2371405B/en not_active Revoked
- 2001-02-20 US US09/788,891 patent/US6717971B2/en not_active Expired - Lifetime
-
2002
- 2002-01-23 ES ES02716151T patent/ES2236499T3/es not_active Expired - Lifetime
- 2002-01-23 DE DE60201974T patent/DE60201974T2/de not_active Expired - Lifetime
- 2002-01-23 AT AT02716151T patent/ATE282901T1/de not_active IP Right Cessation
- 2002-01-23 JP JP2002560247A patent/JP2004520710A/ja active Pending
- 2002-01-23 CN CNB028039653A patent/CN1224147C/zh not_active Expired - Lifetime
- 2002-01-23 EP EP02716151A patent/EP1356553B1/en not_active Expired - Lifetime
- 2002-01-23 WO PCT/GB2002/000290 patent/WO2002060023A1/en not_active Ceased
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