GB2371405B - Improvements in or relating to semiconductor lasers - Google Patents

Improvements in or relating to semiconductor lasers

Info

Publication number
GB2371405B
GB2371405B GB0101641A GB0101641A GB2371405B GB 2371405 B GB2371405 B GB 2371405B GB 0101641 A GB0101641 A GB 0101641A GB 0101641 A GB0101641 A GB 0101641A GB 2371405 B GB2371405 B GB 2371405B
Authority
GB
United Kingdom
Prior art keywords
waveguide
relating
semiconductor lasers
electrical contact
optical waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
GB0101641A
Other languages
English (en)
Other versions
GB0101641D0 (en
GB2371405A (en
Inventor
John Haig Marsh
Craig James Hamilton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Glasgow
Original Assignee
University of Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Glasgow filed Critical University of Glasgow
Priority to GB0101641A priority Critical patent/GB2371405B/en
Priority to US09/788,891 priority patent/US6717971B2/en
Publication of GB0101641D0 publication Critical patent/GB0101641D0/en
Priority to CNB028039653A priority patent/CN1224147C/zh
Priority to EP02716151A priority patent/EP1356553B1/en
Priority to PCT/GB2002/000290 priority patent/WO2002060023A1/en
Priority to DE60201974T priority patent/DE60201974T2/de
Priority to JP2002560247A priority patent/JP2004520710A/ja
Priority to AT02716151T priority patent/ATE282901T1/de
Priority to ES02716151T priority patent/ES2236499T3/es
Publication of GB2371405A publication Critical patent/GB2371405A/en
Application granted granted Critical
Publication of GB2371405B publication Critical patent/GB2371405B/en
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1025—Extended cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
GB0101641A 2001-01-23 2001-01-23 Improvements in or relating to semiconductor lasers Revoked GB2371405B (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
GB0101641A GB2371405B (en) 2001-01-23 2001-01-23 Improvements in or relating to semiconductor lasers
US09/788,891 US6717971B2 (en) 2001-01-23 2001-02-20 Semiconductor lasers
JP2002560247A JP2004520710A (ja) 2001-01-23 2002-01-23 半導体レーザにおける又は関係する改良
EP02716151A EP1356553B1 (en) 2001-01-23 2002-01-23 Improvements in or relating to semiconductor lasers
PCT/GB2002/000290 WO2002060023A1 (en) 2001-01-23 2002-01-23 Improvements in or relating to semiconductor lasers
DE60201974T DE60201974T2 (de) 2001-01-23 2002-01-23 Verbesserungen im bezug auf halbleiterlaser
CNB028039653A CN1224147C (zh) 2001-01-23 2002-01-23 半导体激光器或其相关方面的改进
AT02716151T ATE282901T1 (de) 2001-01-23 2002-01-23 Verbesserungen im bezug auf halbleiterlaser
ES02716151T ES2236499T3 (es) 2001-01-23 2002-01-23 Mejoras relacionadas con dispositivo laser de semiconductor.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0101641A GB2371405B (en) 2001-01-23 2001-01-23 Improvements in or relating to semiconductor lasers

Publications (3)

Publication Number Publication Date
GB0101641D0 GB0101641D0 (en) 2001-03-07
GB2371405A GB2371405A (en) 2002-07-24
GB2371405B true GB2371405B (en) 2003-10-15

Family

ID=9907275

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0101641A Revoked GB2371405B (en) 2001-01-23 2001-01-23 Improvements in or relating to semiconductor lasers

Country Status (9)

Country Link
US (1) US6717971B2 (enExample)
EP (1) EP1356553B1 (enExample)
JP (1) JP2004520710A (enExample)
CN (1) CN1224147C (enExample)
AT (1) ATE282901T1 (enExample)
DE (1) DE60201974T2 (enExample)
ES (1) ES2236499T3 (enExample)
GB (1) GB2371405B (enExample)
WO (1) WO2002060023A1 (enExample)

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US10048499B2 (en) 2005-11-08 2018-08-14 Lumus Ltd. Polarizing optical system
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CN101105503B (zh) * 2007-06-02 2010-10-27 中北大学 捷联式惯导测量组合中加速度计装配误差标量修正方法
JP4971235B2 (ja) * 2008-04-08 2012-07-11 日本電信電話株式会社 半導体光集積素子
DE102008025922B4 (de) 2008-05-30 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur
US8232114B2 (en) * 2009-01-27 2012-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. RTP spike annealing for semiconductor substrate dopant activation
JP2012015266A (ja) * 2010-06-30 2012-01-19 Sony Corp 半導体光増幅器
ES2396109B1 (es) * 2011-07-05 2013-12-27 Abengoa Solar New Technologies, S.A. Dispositivo para la transformación de energía solar concentrada.
ES2396103B1 (es) * 2011-07-05 2014-01-30 Abengoa Solar New Technologies, S.A. Planta solar.
US8927306B2 (en) * 2013-02-28 2015-01-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Etched-facet lasers having windows with single-layer optical coatings
US8988770B2 (en) * 2013-03-14 2015-03-24 Oracle International Corporation Hybrid optical source with semiconductor reflector
CN104184045B (zh) * 2014-08-22 2017-04-05 华中科技大学 一种定波长单纵模工作的脊波导分布反馈半导体激光器
CN104201566B (zh) * 2014-08-22 2017-12-29 华中科技大学 一种具有高单纵模成品率的脊波导分布反馈半导体激光器
DE102015105438A1 (de) * 2015-04-09 2016-10-13 M2K-Laser Gmbh Monolithische Diodenlaseranordnung
CA3007002C (en) 2016-11-08 2023-02-07 Lumus Ltd Light-guide device with optical cutoff edge and corresponding production methods
TWI609541B (zh) * 2016-12-12 2017-12-21 聯亞光電工業股份有限公司 半導體雷射裝置
FR3067866B1 (fr) * 2017-06-19 2022-01-14 Commissariat Energie Atomique Composant laser semiconducteur hybride et procede de fabrication d'un tel composant
WO2019016813A1 (en) 2017-07-19 2019-01-24 Lumus Ltd. LIQUID CRYSTAL LIGHTING ON SILICON VIA OPTICAL ELEMENT GUIDE OF LIGHT
CN113725725B (zh) * 2017-09-28 2025-05-02 苹果公司 使用量子阱混合技术的激光架构
US10551544B2 (en) 2018-01-21 2020-02-04 Lumus Ltd. Light-guide optical element with multiple-axis internal aperture expansion
IL259518B2 (en) 2018-05-22 2023-04-01 Lumus Ltd Optical system and method for improving light field uniformity
AU2019335612B2 (en) 2018-09-09 2024-07-11 Lumus Ltd. Optical systems including light-guide optical elements with two-dimensional expansion
US12124050B2 (en) 2019-02-28 2024-10-22 Lumus Ltd. Compact collimated image projector
WO2021117033A1 (en) 2019-12-08 2021-06-17 Lumus Ltd. Optical systems with compact image projector
KR20230015318A (ko) * 2020-04-03 2023-01-31 오토모티브 코우얼리션 포 트래픽 세이프티, 인크. 광범위하게 튜닝 가능한 단일 모드 방출 반도체 레이저
CN218848473U (zh) 2020-05-12 2023-04-11 鲁姆斯有限公司 包括投影光学器件和光导管的设备
CN115885215A (zh) 2020-08-26 2023-03-31 鲁姆斯有限公司 使用白光作为源生成彩色图像
DE202021104723U1 (de) 2020-09-11 2021-10-18 Lumus Ltd. An ein optisches Lichtleiterelement gekoppelter Bildprojektor
US12204155B2 (en) 2021-09-24 2025-01-21 Apple Inc. Chip-to-chip optical coupling for photonic integrated circuits
US12426139B1 (en) 2022-06-27 2025-09-23 Apple Inc. Feedback control of a diode element
US12320983B1 (en) 2022-08-18 2025-06-03 Lumus Ltd. Image projector with polarizing catadioptric collimator
CN119965680B (zh) * 2024-12-26 2025-11-14 中山大学 一种半导体光放大器及其制备方法

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EP0547038A2 (en) * 1986-07-25 1993-06-16 Mitsubishi Denki Kabushiki Kaisha A semiconductor laser device
US5321716A (en) * 1991-12-17 1994-06-14 Kabushiki Kaisha Toshiba Distributed Feedback semiconductor laser with controlled phase shift
US6137625A (en) * 1997-11-10 2000-10-24 Alcatel Semiconductor optical amplifier and integrated laser source information

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US4831630A (en) * 1983-04-14 1989-05-16 Xerox Corporation Phased-locked window lasers
EP0547038A2 (en) * 1986-07-25 1993-06-16 Mitsubishi Denki Kabushiki Kaisha A semiconductor laser device
US4875216A (en) * 1987-11-30 1989-10-17 Xerox Corporation Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications
EP0375426A2 (en) * 1988-12-21 1990-06-27 Optical Measurement Technology Co., Ltd. Semiconductor optical device
US5321716A (en) * 1991-12-17 1994-06-14 Kabushiki Kaisha Toshiba Distributed Feedback semiconductor laser with controlled phase shift
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Also Published As

Publication number Publication date
US6717971B2 (en) 2004-04-06
EP1356553A1 (en) 2003-10-29
DE60201974T2 (de) 2005-12-15
GB0101641D0 (en) 2001-03-07
EP1356553B1 (en) 2004-11-17
ES2236499T3 (es) 2005-07-16
CN1224147C (zh) 2005-10-19
DE60201974D1 (de) 2004-12-23
JP2004520710A (ja) 2004-07-08
CN1488183A (zh) 2004-04-07
GB2371405A (en) 2002-07-24
US20020097762A1 (en) 2002-07-25
ATE282901T1 (de) 2004-12-15
WO2002060023A1 (en) 2002-08-01

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Legal Events

Date Code Title Description
773K Patent revoked under sect. 73(2)/1977

Free format text: PATENT REVOKED ON 20060320