CN1224147C - 半导体激光器或其相关方面的改进 - Google Patents

半导体激光器或其相关方面的改进 Download PDF

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Publication number
CN1224147C
CN1224147C CNB028039653A CN02803965A CN1224147C CN 1224147 C CN1224147 C CN 1224147C CN B028039653 A CNB028039653 A CN B028039653A CN 02803965 A CN02803965 A CN 02803965A CN 1224147 C CN1224147 C CN 1224147C
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China
Prior art keywords
semiconductor laser
laser device
waveguide
region
layer
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Expired - Lifetime
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CNB028039653A
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English (en)
Chinese (zh)
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CN1488183A (zh
Inventor
克雷格·J·汉密尔顿
约翰·H·马什
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Intense Ltd By Share Ltd
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University of Glasgow
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1025—Extended cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CNB028039653A 2001-01-23 2002-01-23 半导体激光器或其相关方面的改进 Expired - Lifetime CN1224147C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0101641.9 2001-01-23
GB0101641A GB2371405B (en) 2001-01-23 2001-01-23 Improvements in or relating to semiconductor lasers

Publications (2)

Publication Number Publication Date
CN1488183A CN1488183A (zh) 2004-04-07
CN1224147C true CN1224147C (zh) 2005-10-19

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CNB028039653A Expired - Lifetime CN1224147C (zh) 2001-01-23 2002-01-23 半导体激光器或其相关方面的改进

Country Status (9)

Country Link
US (1) US6717971B2 (enExample)
EP (1) EP1356553B1 (enExample)
JP (1) JP2004520710A (enExample)
CN (1) CN1224147C (enExample)
AT (1) ATE282901T1 (enExample)
DE (1) DE60201974T2 (enExample)
ES (1) ES2236499T3 (enExample)
GB (1) GB2371405B (enExample)
WO (1) WO2002060023A1 (enExample)

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CN104184045A (zh) * 2014-08-22 2014-12-03 华中科技大学 一种定波长单纵模工作的脊波导分布反馈半导体激光器

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DE102008025922B4 (de) 2008-05-30 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur
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CN104201566B (zh) * 2014-08-22 2017-12-29 华中科技大学 一种具有高单纵模成品率的脊波导分布反馈半导体激光器
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CA3007002C (en) 2016-11-08 2023-02-07 Lumus Ltd Light-guide device with optical cutoff edge and corresponding production methods
TWI609541B (zh) * 2016-12-12 2017-12-21 聯亞光電工業股份有限公司 半導體雷射裝置
FR3067866B1 (fr) * 2017-06-19 2022-01-14 Commissariat Energie Atomique Composant laser semiconducteur hybride et procede de fabrication d'un tel composant
WO2019016813A1 (en) 2017-07-19 2019-01-24 Lumus Ltd. LIQUID CRYSTAL LIGHTING ON SILICON VIA OPTICAL ELEMENT GUIDE OF LIGHT
CN113725725B (zh) * 2017-09-28 2025-05-02 苹果公司 使用量子阱混合技术的激光架构
US10551544B2 (en) 2018-01-21 2020-02-04 Lumus Ltd. Light-guide optical element with multiple-axis internal aperture expansion
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AU2019335612B2 (en) 2018-09-09 2024-07-11 Lumus Ltd. Optical systems including light-guide optical elements with two-dimensional expansion
US12124050B2 (en) 2019-02-28 2024-10-22 Lumus Ltd. Compact collimated image projector
WO2021117033A1 (en) 2019-12-08 2021-06-17 Lumus Ltd. Optical systems with compact image projector
KR20230015318A (ko) * 2020-04-03 2023-01-31 오토모티브 코우얼리션 포 트래픽 세이프티, 인크. 광범위하게 튜닝 가능한 단일 모드 방출 반도체 레이저
CN218848473U (zh) 2020-05-12 2023-04-11 鲁姆斯有限公司 包括投影光学器件和光导管的设备
CN115885215A (zh) 2020-08-26 2023-03-31 鲁姆斯有限公司 使用白光作为源生成彩色图像
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Publication number Priority date Publication date Assignee Title
CN104184045A (zh) * 2014-08-22 2014-12-03 华中科技大学 一种定波长单纵模工作的脊波导分布反馈半导体激光器
CN104184045B (zh) * 2014-08-22 2017-04-05 华中科技大学 一种定波长单纵模工作的脊波导分布反馈半导体激光器

Also Published As

Publication number Publication date
US6717971B2 (en) 2004-04-06
EP1356553A1 (en) 2003-10-29
DE60201974T2 (de) 2005-12-15
GB0101641D0 (en) 2001-03-07
EP1356553B1 (en) 2004-11-17
ES2236499T3 (es) 2005-07-16
DE60201974D1 (de) 2004-12-23
JP2004520710A (ja) 2004-07-08
GB2371405B (en) 2003-10-15
CN1488183A (zh) 2004-04-07
GB2371405A (en) 2002-07-24
US20020097762A1 (en) 2002-07-25
ATE282901T1 (de) 2004-12-15
WO2002060023A1 (en) 2002-08-01

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