JP2004520710A - 半導体レーザにおける又は関係する改良 - Google Patents

半導体レーザにおける又は関係する改良 Download PDF

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Publication number
JP2004520710A
JP2004520710A JP2002560247A JP2002560247A JP2004520710A JP 2004520710 A JP2004520710 A JP 2004520710A JP 2002560247 A JP2002560247 A JP 2002560247A JP 2002560247 A JP2002560247 A JP 2002560247A JP 2004520710 A JP2004520710 A JP 2004520710A
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Prior art keywords
semiconductor laser
laser device
region
layer
ridge
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Pending
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JP2002560247A
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English (en)
Japanese (ja)
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JP2004520710A5 (enExample
Inventor
クレイグ， ジェームズ ハミルトン，
ジョン， ヘイグ マーシュ，
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University of Glasgow
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University of Glasgow
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Publication of JP2004520710A publication Critical patent/JP2004520710A/ja
Publication of JP2004520710A5 publication Critical patent/JP2004520710A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1025—Extended cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2002560247A 2001-01-23 2002-01-23 半導体レーザにおける又は関係する改良 Pending JP2004520710A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0101641A GB2371405B (en) 2001-01-23 2001-01-23 Improvements in or relating to semiconductor lasers
PCT/GB2002/000290 WO2002060023A1 (en) 2001-01-23 2002-01-23 Improvements in or relating to semiconductor lasers

Publications (2)

Publication Number Publication Date
JP2004520710A true JP2004520710A (ja) 2004-07-08
JP2004520710A5 JP2004520710A5 (enExample) 2007-04-19

Family

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Family Applications (1)

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JP2002560247A Pending JP2004520710A (ja) 2001-01-23 2002-01-23 半導体レーザにおける又は関係する改良

Country Status (9)

Country Link
US (1) US6717971B2 (enExample)
EP (1) EP1356553B1 (enExample)
JP (1) JP2004520710A (enExample)
CN (1) CN1224147C (enExample)
AT (1) ATE282901T1 (enExample)
DE (1) DE60201974T2 (enExample)
ES (1) ES2236499T3 (enExample)
GB (1) GB2371405B (enExample)
WO (1) WO2002060023A1 (enExample)

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JP2009253097A (ja) * 2008-04-08 2009-10-29 Nippon Telegr & Teleph Corp <Ntt> 半導体光集積素子
JP2018098490A (ja) * 2016-12-12 2018-06-21 聯亜光電工業股▲ふん▼有限公司ＬａｎｄＭａｒｋ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐｏｒａｔｉｏｎ 半導体レーザ装置

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DE102008025922B4 (de) 2008-05-30 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur
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ES2396109B1 (es) * 2011-07-05 2013-12-27 Abengoa Solar New Technologies, S.A. Dispositivo para la transformación de energía solar concentrada.
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US8927306B2 (en) * 2013-02-28 2015-01-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Etched-facet lasers having windows with single-layer optical coatings
US8988770B2 (en) * 2013-03-14 2015-03-24 Oracle International Corporation Hybrid optical source with semiconductor reflector
CN104184045B (zh) * 2014-08-22 2017-04-05 华中科技大学 一种定波长单纵模工作的脊波导分布反馈半导体激光器
CN104201566B (zh) * 2014-08-22 2017-12-29 华中科技大学 一种具有高单纵模成品率的脊波导分布反馈半导体激光器
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CA3007002C (en) 2016-11-08 2023-02-07 Lumus Ltd Light-guide device with optical cutoff edge and corresponding production methods
FR3067866B1 (fr) * 2017-06-19 2022-01-14 Commissariat Energie Atomique Composant laser semiconducteur hybride et procede de fabrication d'un tel composant
WO2019016813A1 (en) 2017-07-19 2019-01-24 Lumus Ltd. LIQUID CRYSTAL LIGHTING ON SILICON VIA OPTICAL ELEMENT GUIDE OF LIGHT
CN113725725B (zh) * 2017-09-28 2025-05-02 苹果公司 使用量子阱混合技术的激光架构
US10551544B2 (en) 2018-01-21 2020-02-04 Lumus Ltd. Light-guide optical element with multiple-axis internal aperture expansion
IL259518B2 (en) 2018-05-22 2023-04-01 Lumus Ltd Optical system and method for improving light field uniformity
AU2019335612B2 (en) 2018-09-09 2024-07-11 Lumus Ltd. Optical systems including light-guide optical elements with two-dimensional expansion
US12124050B2 (en) 2019-02-28 2024-10-22 Lumus Ltd. Compact collimated image projector
WO2021117033A1 (en) 2019-12-08 2021-06-17 Lumus Ltd. Optical systems with compact image projector
KR20230015318A (ko) * 2020-04-03 2023-01-31 오토모티브 코우얼리션 포 트래픽 세이프티, 인크. 광범위하게 튜닝 가능한 단일 모드 방출 반도체 레이저
CN218848473U (zh) 2020-05-12 2023-04-11 鲁姆斯有限公司 包括投影光学器件和光导管的设备
CN115885215A (zh) 2020-08-26 2023-03-31 鲁姆斯有限公司 使用白光作为源生成彩色图像
DE202021104723U1 (de) 2020-09-11 2021-10-18 Lumus Ltd. An ein optisches Lichtleiterelement gekoppelter Bildprojektor
US12204155B2 (en) 2021-09-24 2025-01-21 Apple Inc. Chip-to-chip optical coupling for photonic integrated circuits
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US12320983B1 (en) 2022-08-18 2025-06-03 Lumus Ltd. Image projector with polarizing catadioptric collimator
CN119965680B (zh) * 2024-12-26 2025-11-14 中山大学 一种半导体光放大器及其制备方法

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Publication number Priority date Publication date Assignee Title
JP2009253097A (ja) * 2008-04-08 2009-10-29 Nippon Telegr & Teleph Corp <Ntt> 半導体光集積素子
JP2018098490A (ja) * 2016-12-12 2018-06-21 聯亜光電工業股▲ふん▼有限公司ＬａｎｄＭａｒｋ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐｏｒａｔｉｏｎ 半導体レーザ装置

Also Published As

Publication number Publication date
US6717971B2 (en) 2004-04-06
EP1356553A1 (en) 2003-10-29
DE60201974T2 (de) 2005-12-15
GB0101641D0 (en) 2001-03-07
EP1356553B1 (en) 2004-11-17
ES2236499T3 (es) 2005-07-16
CN1224147C (zh) 2005-10-19
DE60201974D1 (de) 2004-12-23
GB2371405B (en) 2003-10-15
CN1488183A (zh) 2004-04-07
GB2371405A (en) 2002-07-24
US20020097762A1 (en) 2002-07-25
ATE282901T1 (de) 2004-12-15
WO2002060023A1 (en) 2002-08-01

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