DE60201974T2 - Verbesserungen im bezug auf halbleiterlaser - Google Patents
Verbesserungen im bezug auf halbleiterlaser Download PDFInfo
- Publication number
- DE60201974T2 DE60201974T2 DE60201974T DE60201974T DE60201974T2 DE 60201974 T2 DE60201974 T2 DE 60201974T2 DE 60201974 T DE60201974 T DE 60201974T DE 60201974 T DE60201974 T DE 60201974T DE 60201974 T2 DE60201974 T2 DE 60201974T2
- Authority
- DE
- Germany
- Prior art keywords
- waveguide
- layer
- region
- optical
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 230000003287 optical effect Effects 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims description 74
- 238000000034 method Methods 0.000 claims description 48
- 238000005253 cladding Methods 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 230000005855 radiation Effects 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 239000002800 charge carrier Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 5
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- 239000012300 argon atmosphere Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 90
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000012792 core layer Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009022 nonlinear effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1025—Extended cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/204—Strongly index guided structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0101641 | 2001-01-23 | ||
| GB0101641A GB2371405B (en) | 2001-01-23 | 2001-01-23 | Improvements in or relating to semiconductor lasers |
| PCT/GB2002/000290 WO2002060023A1 (en) | 2001-01-23 | 2002-01-23 | Improvements in or relating to semiconductor lasers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60201974D1 DE60201974D1 (de) | 2004-12-23 |
| DE60201974T2 true DE60201974T2 (de) | 2005-12-15 |
Family
ID=9907275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60201974T Expired - Lifetime DE60201974T2 (de) | 2001-01-23 | 2002-01-23 | Verbesserungen im bezug auf halbleiterlaser |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6717971B2 (enExample) |
| EP (1) | EP1356553B1 (enExample) |
| JP (1) | JP2004520710A (enExample) |
| CN (1) | CN1224147C (enExample) |
| AT (1) | ATE282901T1 (enExample) |
| DE (1) | DE60201974T2 (enExample) |
| ES (1) | ES2236499T3 (enExample) |
| GB (1) | GB2371405B (enExample) |
| WO (1) | WO2002060023A1 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7173953B2 (en) * | 2001-11-06 | 2007-02-06 | Bookham Technology Plc | Anti-reflection coatings for semiconductor lasers |
| GB2387481B (en) * | 2002-04-10 | 2005-08-31 | Intense Photonics Ltd | Integrated active photonic device and photodetector |
| US6878959B2 (en) * | 2002-11-22 | 2005-04-12 | Agilent Technologies, Inc. | Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice |
| US10048499B2 (en) | 2005-11-08 | 2018-08-14 | Lumus Ltd. | Polarizing optical system |
| JP2008198944A (ja) * | 2007-02-15 | 2008-08-28 | Fujitsu Ltd | 半導体光集積素子 |
| DE102007026925A1 (de) * | 2007-02-28 | 2008-09-04 | Osram Opto Semiconductors Gmbh | Integrierte Trapezlaseranordnung und Verfahren zu deren Herstellung |
| CN101105503B (zh) * | 2007-06-02 | 2010-10-27 | 中北大学 | 捷联式惯导测量组合中加速度计装配误差标量修正方法 |
| JP4971235B2 (ja) * | 2008-04-08 | 2012-07-11 | 日本電信電話株式会社 | 半導体光集積素子 |
| DE102008025922B4 (de) | 2008-05-30 | 2020-02-06 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser mit Phasenstruktur |
| US8232114B2 (en) * | 2009-01-27 | 2012-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | RTP spike annealing for semiconductor substrate dopant activation |
| JP2012015266A (ja) * | 2010-06-30 | 2012-01-19 | Sony Corp | 半導体光増幅器 |
| ES2396109B1 (es) * | 2011-07-05 | 2013-12-27 | Abengoa Solar New Technologies, S.A. | Dispositivo para la transformación de energía solar concentrada. |
| ES2396103B1 (es) * | 2011-07-05 | 2014-01-30 | Abengoa Solar New Technologies, S.A. | Planta solar. |
| US8927306B2 (en) * | 2013-02-28 | 2015-01-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Etched-facet lasers having windows with single-layer optical coatings |
| US8988770B2 (en) * | 2013-03-14 | 2015-03-24 | Oracle International Corporation | Hybrid optical source with semiconductor reflector |
| CN104184045B (zh) * | 2014-08-22 | 2017-04-05 | 华中科技大学 | 一种定波长单纵模工作的脊波导分布反馈半导体激光器 |
| CN104201566B (zh) * | 2014-08-22 | 2017-12-29 | 华中科技大学 | 一种具有高单纵模成品率的脊波导分布反馈半导体激光器 |
| DE102015105438A1 (de) * | 2015-04-09 | 2016-10-13 | M2K-Laser Gmbh | Monolithische Diodenlaseranordnung |
| CA3007002C (en) | 2016-11-08 | 2023-02-07 | Lumus Ltd | Light-guide device with optical cutoff edge and corresponding production methods |
| TWI609541B (zh) * | 2016-12-12 | 2017-12-21 | 聯亞光電工業股份有限公司 | 半導體雷射裝置 |
| FR3067866B1 (fr) * | 2017-06-19 | 2022-01-14 | Commissariat Energie Atomique | Composant laser semiconducteur hybride et procede de fabrication d'un tel composant |
| WO2019016813A1 (en) | 2017-07-19 | 2019-01-24 | Lumus Ltd. | LIQUID CRYSTAL LIGHTING ON SILICON VIA OPTICAL ELEMENT GUIDE OF LIGHT |
| CN113725725B (zh) * | 2017-09-28 | 2025-05-02 | 苹果公司 | 使用量子阱混合技术的激光架构 |
| US10551544B2 (en) | 2018-01-21 | 2020-02-04 | Lumus Ltd. | Light-guide optical element with multiple-axis internal aperture expansion |
| IL259518B2 (en) | 2018-05-22 | 2023-04-01 | Lumus Ltd | Optical system and method for improving light field uniformity |
| AU2019335612B2 (en) | 2018-09-09 | 2024-07-11 | Lumus Ltd. | Optical systems including light-guide optical elements with two-dimensional expansion |
| US12124050B2 (en) | 2019-02-28 | 2024-10-22 | Lumus Ltd. | Compact collimated image projector |
| WO2021117033A1 (en) | 2019-12-08 | 2021-06-17 | Lumus Ltd. | Optical systems with compact image projector |
| KR20230015318A (ko) * | 2020-04-03 | 2023-01-31 | 오토모티브 코우얼리션 포 트래픽 세이프티, 인크. | 광범위하게 튜닝 가능한 단일 모드 방출 반도체 레이저 |
| CN218848473U (zh) | 2020-05-12 | 2023-04-11 | 鲁姆斯有限公司 | 包括投影光学器件和光导管的设备 |
| CN115885215A (zh) | 2020-08-26 | 2023-03-31 | 鲁姆斯有限公司 | 使用白光作为源生成彩色图像 |
| DE202021104723U1 (de) | 2020-09-11 | 2021-10-18 | Lumus Ltd. | An ein optisches Lichtleiterelement gekoppelter Bildprojektor |
| US12204155B2 (en) | 2021-09-24 | 2025-01-21 | Apple Inc. | Chip-to-chip optical coupling for photonic integrated circuits |
| US12426139B1 (en) | 2022-06-27 | 2025-09-23 | Apple Inc. | Feedback control of a diode element |
| US12320983B1 (en) | 2022-08-18 | 2025-06-03 | Lumus Ltd. | Image projector with polarizing catadioptric collimator |
| CN119965680B (zh) * | 2024-12-26 | 2025-11-14 | 中山大学 | 一种半导体光放大器及其制备方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5624397B2 (enExample) * | 1972-07-21 | 1981-06-05 | ||
| JPS54115088A (en) | 1978-02-28 | 1979-09-07 | Nec Corp | Double hetero junction laser element of stripe type |
| US4511408A (en) | 1982-04-22 | 1985-04-16 | The Board Of Trustees Of The University Of Illinois | Semiconductor device fabrication with disordering elements introduced into active region |
| JPS586191A (ja) * | 1981-07-03 | 1983-01-13 | Hitachi Ltd | 半導体レ−ザ装置 |
| US4594603A (en) | 1982-04-22 | 1986-06-10 | Board Of Trustees Of The University Of Illinois | Semiconductor device with disordered active region |
| US4639275A (en) | 1982-04-22 | 1987-01-27 | The Board Of Trustees Of The University Of Illinois | Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor |
| JPS58192394A (ja) * | 1982-05-07 | 1983-11-09 | Hitachi Ltd | 半導体レ−ザ装置 |
| JPS5944884A (ja) * | 1982-09-06 | 1984-03-13 | Nippon Telegr & Teleph Corp <Ntt> | 分布帰還形半導体接合レ−ザ |
| US4831630A (en) * | 1983-04-14 | 1989-05-16 | Xerox Corporation | Phased-locked window lasers |
| US4585491A (en) | 1983-09-02 | 1986-04-29 | Xerox Corporation | Wavelength tuning of quantum well lasers by thermal annealing |
| US4684653A (en) | 1985-03-08 | 1987-08-04 | The Trustees Of Princeton University | Pyrido(2,3-d)pyrimidine derivatives |
| US4727556A (en) | 1985-12-30 | 1988-02-23 | Xerox Corporation | Semiconductor lasers fabricated from impurity induced disordering |
| US4871690A (en) | 1986-01-21 | 1989-10-03 | Xerox Corporation | Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects |
| DE3751548T2 (de) * | 1986-07-25 | 1996-04-11 | Mitsubishi Electric Corp | Halbleiterlaser. |
| GB2198603A (en) | 1986-12-05 | 1988-06-15 | Philips Electronic Associated | Divider circuit |
| JPH0648742B2 (ja) * | 1987-02-09 | 1994-06-22 | 日本電気株式会社 | 半導体レ−ザの製造方法 |
| US4857971A (en) | 1987-03-23 | 1989-08-15 | Xerox Corporation | (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures |
| US4845725A (en) * | 1987-05-20 | 1989-07-04 | Spectra Diode Laboratories, Inc. | Window laser with high power reduced divergence output |
| US4764934A (en) * | 1987-07-27 | 1988-08-16 | Ortel Corporation | Superluminescent diode and single mode laser |
| US4875216A (en) * | 1987-11-30 | 1989-10-17 | Xerox Corporation | Buried waveguide window regions for improved performance semiconductor lasers and other opto-electronic applications |
| DE68926029T2 (de) * | 1988-12-21 | 1996-09-12 | Optical Measurement Technology | Optische Halbleitervorrichtung |
| JPH0448792A (ja) * | 1990-06-15 | 1992-02-18 | Anritsu Corp | 窓領域を有する半導体能動光素子 |
| JP3142333B2 (ja) * | 1991-12-17 | 2001-03-07 | 株式会社東芝 | 分布帰還型半導体レ−ザ及びその駆動方法 |
| US5384797A (en) | 1992-09-21 | 1995-01-24 | Sdl, Inc. | Monolithic multi-wavelength laser diode array |
| JPH09326504A (ja) * | 1996-06-06 | 1997-12-16 | Nippon Telegr & Teleph Corp <Ntt> | スーパールミネッセントダイオード |
| JPH10163563A (ja) * | 1996-11-29 | 1998-06-19 | Furukawa Electric Co Ltd:The | 半導体レーザ |
| FR2770938B1 (fr) * | 1997-11-10 | 1999-12-10 | Alsthom Cge Alcatel | Amplificateur optique semi-conducteur et source laser integree l'incorporant |
| US6052397A (en) * | 1997-12-05 | 2000-04-18 | Sdl, Inc. | Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam |
| JPH11354880A (ja) * | 1998-06-03 | 1999-12-24 | Rohm Co Ltd | 半導体レーザ素子およびその製造方法 |
| GB0018576D0 (en) * | 2000-07-27 | 2000-09-13 | Univ Glasgow | Improved semiconductor laser |
-
2001
- 2001-01-23 GB GB0101641A patent/GB2371405B/en not_active Revoked
- 2001-02-20 US US09/788,891 patent/US6717971B2/en not_active Expired - Lifetime
-
2002
- 2002-01-23 ES ES02716151T patent/ES2236499T3/es not_active Expired - Lifetime
- 2002-01-23 DE DE60201974T patent/DE60201974T2/de not_active Expired - Lifetime
- 2002-01-23 AT AT02716151T patent/ATE282901T1/de not_active IP Right Cessation
- 2002-01-23 JP JP2002560247A patent/JP2004520710A/ja active Pending
- 2002-01-23 CN CNB028039653A patent/CN1224147C/zh not_active Expired - Lifetime
- 2002-01-23 EP EP02716151A patent/EP1356553B1/en not_active Expired - Lifetime
- 2002-01-23 WO PCT/GB2002/000290 patent/WO2002060023A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US6717971B2 (en) | 2004-04-06 |
| EP1356553A1 (en) | 2003-10-29 |
| GB0101641D0 (en) | 2001-03-07 |
| EP1356553B1 (en) | 2004-11-17 |
| ES2236499T3 (es) | 2005-07-16 |
| CN1224147C (zh) | 2005-10-19 |
| DE60201974D1 (de) | 2004-12-23 |
| JP2004520710A (ja) | 2004-07-08 |
| GB2371405B (en) | 2003-10-15 |
| CN1488183A (zh) | 2004-04-07 |
| GB2371405A (en) | 2002-07-24 |
| US20020097762A1 (en) | 2002-07-25 |
| ATE282901T1 (de) | 2004-12-15 |
| WO2002060023A1 (en) | 2002-08-01 |
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