DE69521556T2 - Herstellungsverfahren für eine optische Halbleitervorrichtung - Google Patents

Herstellungsverfahren für eine optische Halbleitervorrichtung

Info

Publication number
DE69521556T2
DE69521556T2 DE69521556T DE69521556T DE69521556T2 DE 69521556 T2 DE69521556 T2 DE 69521556T2 DE 69521556 T DE69521556 T DE 69521556T DE 69521556 T DE69521556 T DE 69521556T DE 69521556 T2 DE69521556 T2 DE 69521556T2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69521556T
Other languages
English (en)
Other versions
DE69521556D1 (de
Inventor
Yasutaka Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Compound Semiconductor Devices Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69521556D1 publication Critical patent/DE69521556D1/de
Publication of DE69521556T2 publication Critical patent/DE69521556T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69521556T 1994-04-28 1995-04-27 Herstellungsverfahren für eine optische Halbleitervorrichtung Expired - Fee Related DE69521556T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6111884A JP2937751B2 (ja) 1994-04-28 1994-04-28 光半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69521556D1 DE69521556D1 (de) 2001-08-09
DE69521556T2 true DE69521556T2 (de) 2002-04-25

Family

ID=14572570

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69521556T Expired - Fee Related DE69521556T2 (de) 1994-04-28 1995-04-27 Herstellungsverfahren für eine optische Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US5580818A (de)
EP (1) EP0680119B1 (de)
JP (1) JP2937751B2 (de)
DE (1) DE69521556T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08116135A (ja) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp 導波路集積素子の製造方法，及び導波路集積素子
JP2865000B2 (ja) * 1994-10-27 1999-03-08 日本電気株式会社 出力導波路集積半導体レーザとその製造方法
JP2900824B2 (ja) * 1995-03-31 1999-06-02 日本電気株式会社 光半導体装置の製造方法
JP2765545B2 (ja) * 1995-12-26 1998-06-18 日本電気株式会社 光波長弁別回路およびその製造方法
JPH09232625A (ja) * 1996-02-27 1997-09-05 Oki Electric Ind Co Ltd 端面発光型光半導体素子及びその製造方法
JP2917913B2 (ja) * 1996-06-10 1999-07-12 日本電気株式会社 半導体光素子の製造方法
JPH1056229A (ja) * 1996-08-08 1998-02-24 Fujitsu Ltd 半導体光集積素子の製造方法
JP3104789B2 (ja) * 1997-05-02 2000-10-30 日本電気株式会社 半導体光素子およびその製造方法
US6133125A (en) * 1999-01-06 2000-10-17 Lucent Technologies Inc. Selective area diffusion control process
JP3329764B2 (ja) * 1999-05-13 2002-09-30 日本電気株式会社 半導体レーザー及び半導体光増幅器
JP2001044566A (ja) * 1999-07-28 2001-02-16 Nec Corp 半導体レーザおよびその製造方法
JP4618854B2 (ja) * 2000-08-11 2011-01-26 Ｏｋｉセミコンダクタ株式会社 半導体装置およびその製造方法
US6865205B2 (en) 2001-05-17 2005-03-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US6462865B1 (en) 2001-06-29 2002-10-08 Super Light Wave Corp. All-optical logic with wired-OR multi-mode-interference combiners and semiconductor-optical-amplifier inverters
KR100605372B1 (ko) * 2003-09-29 2006-07-28 한국전자통신연구원 다중양자우물을 갖는 전계흡수형 광 변조기
NO325047B1 (no) * 2005-03-30 2008-01-21 Intopto As Optiske enheter ved bruk av et pentaert III-V material system
JP5093033B2 (ja) 2008-09-30 2012-12-05 ソニー株式会社 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4077817A (en) * 1975-12-31 1978-03-07 Texas Instruments Incorporated Making a semiconductor laser structure by liquid phase epitaxy
US4114257A (en) * 1976-09-23 1978-09-19 Texas Instruments Incorporated Method of fabrication of a monolithic integrated optical circuit
US4961198A (en) * 1988-01-14 1990-10-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP2890745B2 (ja) * 1990-08-20 1999-05-17 富士通株式会社 半導体装置の製造方法および、光半導体装置の製造方法
JP2701569B2 (ja) * 1991-04-01 1998-01-21 日本電気株式会社 光半導体素子の製造方法
JP3263949B2 (ja) * 1991-02-25 2002-03-11 日本電気株式会社 光集積回路の製造方法
JPH0582909A (ja) * 1991-09-24 1993-04-02 Nippon Telegr & Teleph Corp <Ntt> 半導体デバイス成長用マスクおよび半導体デバイスの製造方法
JP3084416B2 (ja) * 1991-10-21 2000-09-04 日本電信電話株式会社 光結合デバイスの製造方法
EP0558089B1 (de) * 1992-02-28 2002-06-05 Hitachi, Ltd. Optische integrierte Halbleitervorrichtung und Verfahren zur Herstellung und Verwendung in einem Lichtempfänger
JPH05327111A (ja) * 1992-05-20 1993-12-10 Fujitsu Ltd 半導体レーザ装置及びその製造方法
JPH05327112A (ja) * 1992-05-20 1993-12-10 Sanyo Electric Co Ltd 半導体レーザの製造方法
JP2950028B2 (ja) * 1992-07-23 1999-09-20 日本電気株式会社 光半導体素子の製造方法
JPH0770791B2 (ja) * 1992-12-22 1995-07-31 日本電気株式会社 半導体レーザ及びその製造方法
JPH07176827A (ja) * 1993-08-20 1995-07-14 Mitsubishi Electric Corp 変調器付半導体レーザ装置の製造方法

Also Published As

Publication number Publication date
JP2937751B2 (ja) 1999-08-23
JPH07302952A (ja) 1995-11-14
EP0680119A1 (de) 1995-11-02
EP0680119B1 (de) 2001-07-04
US5580818A (en) 1996-12-03
DE69521556D1 (de) 2001-08-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD., KAWASAKI

8339 Ceased/non-payment of the annual fee