DE69220303T2 - Verfahren zur Herstellung eines Halbleiterlasers mit verteilter Rückkoppelung - Google Patents

Verfahren zur Herstellung eines Halbleiterlasers mit verteilter Rückkoppelung

Info

Publication number
DE69220303T2
DE69220303T2 DE69220303T DE69220303T DE69220303T2 DE 69220303 T2 DE69220303 T2 DE 69220303T2 DE 69220303 T DE69220303 T DE 69220303T DE 69220303 T DE69220303 T DE 69220303T DE 69220303 T2 DE69220303 T2 DE 69220303T2
Authority
DE
Germany
Prior art keywords
production
semiconductor laser
distributed feedback
feedback
distributed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69220303T
Other languages
English (en)
Other versions
DE69220303D1 (de
Inventor
Kazuhiko Inoguchi
Satoshi Sugahara
Mototaka Taneya
Hiroaki Kudo
Chitose Nakanishi
Haruhisa Takiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18790391A external-priority patent/JPH0537070A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69220303D1 publication Critical patent/DE69220303D1/de
Publication of DE69220303T2 publication Critical patent/DE69220303T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69220303T 1991-07-24 1992-07-24 Verfahren zur Herstellung eines Halbleiterlasers mit verteilter Rückkoppelung Expired - Fee Related DE69220303T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP18492891 1991-07-24
JP18790391A JPH0537070A (ja) 1991-07-26 1991-07-26 分布帰還型半導体レーザ素子の製造方法
JP2291292 1992-02-07

Publications (2)

Publication Number Publication Date
DE69220303D1 DE69220303D1 (de) 1997-07-17
DE69220303T2 true DE69220303T2 (de) 1998-01-02

Family

ID=27284027

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69220303T Expired - Fee Related DE69220303T2 (de) 1991-07-24 1992-07-24 Verfahren zur Herstellung eines Halbleiterlasers mit verteilter Rückkoppelung

Country Status (3)

Country Link
US (1) US5292685A (de)
EP (1) EP0526128B1 (de)
DE (1) DE69220303T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539766A (en) * 1993-08-19 1996-07-23 Matsushita Electric Industrial Co., Ltd. Distributed feedback semiconductor laser
US6194240B1 (en) * 1993-12-21 2001-02-27 Lucent Technologies Inc. Method for fabrication of wavelength selective electro-optic grating for DFB/DBR lasers
TW291585B (de) * 1994-07-04 1996-11-21 Mitsubishi Chem Corp
JPH09116222A (ja) * 1995-10-17 1997-05-02 Mitsubishi Electric Corp 半導体レーザの製造方法，及び半導体レーザ
EP0782226A1 (de) * 1995-12-28 1997-07-02 Lucent Technologies Inc. Herstellungsverfahren für einen Halbleiterlaser mit Verteilter Rüchkopplung und entlang des Resonators varierender Gitterkopplung
US6001664A (en) * 1996-02-01 1999-12-14 Cielo Communications, Inc. Method for making closely-spaced VCSEL and photodetector on a substrate
US6392256B1 (en) 1996-02-01 2002-05-21 Cielo Communications, Inc. Closely-spaced VCSEL and photodetector for applications requiring their independent operation
US5793913A (en) * 1996-07-10 1998-08-11 Northern Telecom Limited Method for the hybrid integration of discrete elements on a semiconductor substrate
JP2950302B2 (ja) * 1997-11-25 1999-09-20 日本電気株式会社 半導体レーザ
JP3434706B2 (ja) * 1998-05-21 2003-08-11 富士写真フイルム株式会社 半導体レーザおよびその製造方法
EP1130726A3 (de) * 2000-01-28 2003-04-23 The Furukawa Electric Co., Ltd. Halbleiterlaservorrichtung mit verteilter Rückkopplung und Mehrwellenlängenvielfachlaser
US7050472B2 (en) * 2000-03-01 2006-05-23 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and method for manufacturing the same
JP4097950B2 (ja) * 2002-02-12 2008-06-11 三菱電機株式会社 分布帰還型レーザ装置、半導体光装置および分布帰還型レーザ装置の製造方法
US6960490B2 (en) * 2002-03-14 2005-11-01 Epitactix Pty Ltd. Method and resulting structure for manufacturing semiconductor substrates
AUPS112202A0 (en) * 2002-03-14 2002-04-18 Commonwealth Scientific And Industrial Research Organisation Semiconductor manufacture
US6810058B2 (en) * 2002-04-23 2004-10-26 Adc Telecommunications, Inc. Semiconductor laser with gain waveguide layer providing transversal and longitudinal mode stability
KR100663589B1 (ko) * 2004-11-24 2007-01-02 삼성전자주식회사 분포귀환 반도체 레이저의 제조방법
JP2007088285A (ja) * 2005-09-22 2007-04-05 Nec Electronics Corp 半導体レーザ素子の製造方法および半導体レーザ素子
JP4721924B2 (ja) * 2005-12-09 2011-07-13 富士通株式会社 光導波路を伝搬する光と回折格子とを結合させた光素子
JP5440304B2 (ja) * 2010-03-19 2014-03-12 富士通株式会社 光半導体装置及びその製造方法
US9164247B2 (en) * 2011-07-28 2015-10-20 Source Photonics, Inc. Apparatuses for reducing the sensitivity of an optical signal to polarization and methods of making and using the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4023993A (en) * 1974-08-22 1977-05-17 Xerox Corporation Method of making an electrically pumped solid-state distributed feedback laser
US4045749A (en) * 1975-11-24 1977-08-30 Xerox Corporation Corrugation coupled twin guide laser
JPS59103393A (ja) * 1982-12-06 1984-06-14 Agency Of Ind Science & Technol 半導体レ−ザの製造方法
JPS60124887A (ja) * 1983-12-09 1985-07-03 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS60164380A (ja) * 1984-02-06 1985-08-27 Nec Corp 半導体レ−ザの製造方法
US4575919A (en) * 1984-05-24 1986-03-18 At&T Bell Laboratories Method of making heteroepitaxial ridge overgrown laser
JPS61100991A (ja) * 1984-10-22 1986-05-19 Sharp Corp 半導体レ−ザ素子
JPS61190994A (ja) * 1985-02-19 1986-08-25 Sharp Corp 半導体レ−ザ素子
DE3665492D1 (en) * 1985-03-15 1989-10-12 Vossloh Werke Gmbh Securing clamp and fastening device for railway rails
JPS62163385A (ja) * 1986-01-14 1987-07-20 Sony Corp 分布帰還型半導体レ−ザの製造方法
JPS6318686A (ja) * 1986-07-10 1988-01-26 Sharp Corp 半導体レ−ザ素子
JPS6373683A (ja) * 1986-09-17 1988-04-04 Furukawa Electric Co Ltd:The 分布帰還型半導体レ−ザ
JPS6393187A (ja) * 1986-10-08 1988-04-23 Sharp Corp 分布帰還型半導体レ−ザ
JPS63124484A (ja) * 1986-11-12 1988-05-27 Sharp Corp 半導体レ−ザ素子
JPS63156386A (ja) * 1986-12-19 1988-06-29 Fujitsu Ltd 半導体発光装置の製造方法
JPS63205984A (ja) * 1987-02-23 1988-08-25 Mitsubishi Electric Corp 面発光型半導体レ−ザ
JP2728401B2 (ja) * 1987-04-21 1998-03-18 三菱電機株式会社 半導体レーザ
JP2804062B2 (ja) * 1989-02-06 1998-09-24 株式会社東芝 半導体レーザ装置及びその製造方法
JPH0719931B2 (ja) * 1989-04-06 1995-03-06 三菱電機株式会社 半導体レーザ装置およびその製造方法

Also Published As

Publication number Publication date
EP0526128A3 (en) 1993-03-17
EP0526128A2 (de) 1993-02-03
EP0526128B1 (de) 1997-06-11
US5292685A (en) 1994-03-08
DE69220303D1 (de) 1997-07-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee