DE69232451T2 - Verfahren zur Herstellung einer Anordung mit einem Diamant-Metall Übergang - Google Patents

Verfahren zur Herstellung einer Anordung mit einem Diamant-Metall Übergang

Info

Publication number
DE69232451T2
DE69232451T2 DE69232451T DE69232451T DE69232451T2 DE 69232451 T2 DE69232451 T2 DE 69232451T2 DE 69232451 T DE69232451 T DE 69232451T DE 69232451 T DE69232451 T DE 69232451T DE 69232451 T2 DE69232451 T2 DE 69232451T2
Authority
DE
Germany
Prior art keywords
diamond
arrangement
production
metal transition
transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69232451T
Other languages
English (en)
Other versions
DE69232451D1 (de
Inventor
Keiji Hirabayashi
Masaaki Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69232451D1 publication Critical patent/DE69232451D1/de
Publication of DE69232451T2 publication Critical patent/DE69232451T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/0425—Making electrodes
    • H01L21/043—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Ceramic Products (AREA)
DE69232451T 1991-06-21 1992-06-19 Verfahren zur Herstellung einer Anordung mit einem Diamant-Metall Übergang Expired - Fee Related DE69232451T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3150317A JPH05891A (ja) 1991-06-21 1991-06-21 ダイヤモンド−金属接合体

Publications (2)

Publication Number Publication Date
DE69232451D1 DE69232451D1 (de) 2002-04-11
DE69232451T2 true DE69232451T2 (de) 2002-07-18

Family

ID=15494382

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232451T Expired - Fee Related DE69232451T2 (de) 1991-06-21 1992-06-19 Verfahren zur Herstellung einer Anordung mit einem Diamant-Metall Übergang

Country Status (4)

Country Link
US (1) US6184059B1 (de)
EP (1) EP0519472B1 (de)
JP (1) JPH05891A (de)
DE (1) DE69232451T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5382808A (en) * 1993-05-14 1995-01-17 Kobe Steel, Usa Inc. Metal boride ohmic contact on diamond and method for making same
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
DE102004006544B3 (de) * 2004-02-10 2005-09-08 Infineon Technologies Ag Verfahren zur Abscheidung eines leitfähigen Kohlenstoffmaterials auf einem Halbleiter zur Ausbildung eines Schottky-Kontaktes und Halbleiterkontaktvorrichtung
WO2006087937A1 (ja) * 2005-02-16 2006-08-24 National Institute For Materials Science ダイヤモンド半導体整流素子
US20070026205A1 (en) 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
US8030637B2 (en) 2006-08-25 2011-10-04 Qimonda Ag Memory element using reversible switching between SP2 and SP3 hybridized carbon
US20080102278A1 (en) 2006-10-27 2008-05-01 Franz Kreupl Carbon filament memory and method for fabrication
US7915603B2 (en) 2006-10-27 2011-03-29 Qimonda Ag Modifiable gate stack memory element
JP4997434B2 (ja) 2007-08-07 2012-08-08 株式会社ジャパンディスプレイイースト 液晶表示装置の製造方法
US7768016B2 (en) 2008-02-11 2010-08-03 Qimonda Ag Carbon diode array for resistivity changing memories
GB0819001D0 (en) * 2008-10-16 2008-11-26 Diamond Detectors Ltd Contacts on diamond
EP2284892A1 (de) * 2009-08-12 2011-02-16 Applied Materials, Inc. Verfahren zur Herstellung eines Halbleitervorrichtungsmoduls, Halbleitervorrichtungsanschlussvorrichtung, Halbleitervorrichtungsmodulherstellungsvorrichtung, Halbleitervorrichtungsmodul
JP6357951B2 (ja) * 2013-08-12 2018-07-18 株式会社デンソー グラファイト薄膜構造体の製造方法
JP6341477B2 (ja) * 2013-12-12 2018-06-13 国立研究開発法人産業技術総合研究所 ダイヤモンド半導体装置及びその製造方法
JP6257459B2 (ja) * 2014-06-23 2018-01-10 株式会社東芝 半導体装置及びその製造方法
JP6444718B2 (ja) 2014-12-15 2018-12-26 株式会社東芝 半導体装置
JP6466197B2 (ja) * 2015-02-19 2019-02-06 国立研究開発法人産業技術総合研究所 半導体−金属複合材料及びその製造方法
CN113725076A (zh) * 2021-07-13 2021-11-30 西安电子科技大学芜湖研究院 一种氢终端金刚石隧穿欧姆接触电阻的制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665193A (en) * 1967-03-29 1972-05-23 Fizichesky I Im P N Lebedeva L Diamond nuclear radiation detector
US4104441A (en) * 1975-07-29 1978-08-01 Institut Sverkhtverdykh Materialov Ssr Polycrystalline diamond member and method of preparing same
CN1020477C (zh) * 1987-08-10 1993-05-05 株式会社半导体能源研究所 含卤素的碳材料淀积方法
JPH01216561A (ja) * 1988-02-24 1989-08-30 Mitsubishi Metal Corp 半導体装置のダイボンディング用基板
JPH0234979A (ja) 1988-07-25 1990-02-05 Shimadzu Corp ダイオード素子及びその製造方法
JPH0241800A (ja) * 1988-08-02 1990-02-09 Ishikawajima Harima Heavy Ind Co Ltd 下部複動プレス
JPH0278271A (ja) 1988-09-14 1990-03-19 Hitachi Ltd 混成集積回路
JPH02248397A (ja) * 1989-03-20 1990-10-04 Onoda Cement Co Ltd ダイヤモンドの製造装置および製造方法
US5036373A (en) * 1989-06-01 1991-07-30 Semiconductor Energy Laboratory Co., Ltd. Electric device with grains and an insulating layer
JPH0358481A (ja) 1989-07-26 1991-03-13 Sumitomo Electric Ind Ltd 半導体ダイヤモンドのオーミツク接続電極とその形成方法
US5196366A (en) * 1989-08-17 1993-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing electric devices
JPH03105974A (ja) * 1989-09-19 1991-05-02 Kobe Steel Ltd 多結晶ダイヤ薄膜合成によるシヨツトキー・ダイオードの製作法
JP3058481B2 (ja) 1991-06-11 2000-07-04 株式会社リコー 電子黒板の色分離方法及びその色分離装置

Also Published As

Publication number Publication date
EP0519472A2 (de) 1992-12-23
EP0519472A3 (en) 1993-05-19
DE69232451D1 (de) 2002-04-11
JPH05891A (ja) 1993-01-08
EP0519472B1 (de) 2002-03-06
US6184059B1 (en) 2001-02-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee